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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| R6020KNZ1C9 | ROHM Semiconductor | $7.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-247-3 | 3 | 13 Weeks | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 231W Tc | 20A | 60A | 0.196Ohm | 418 mJ | N-Channel | 1550pF @ 25V | 196m Ω @ 9.5A, 10V | 5V @ 1mA | 20A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK20N60W5,S1VF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk20n60w5s1vf-datasheets-2104.pdf | TO-247-3 | 16 Weeks | TO-247 | 1.8nF | 20A | 600V | 165W Tc | N-Channel | 1800pF @ 300V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 55nC @ 10V | 175 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA8N100C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fqa8n100c-datasheets-2109.pdf | 1kV | 8A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 6 Weeks | 6.401g | No SVHC | 1.45Ohm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | FAST SWITCHING | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 225W | 1 | FET General Purpose Power | Not Qualified | 50 ns | 95ns | 80 ns | 122 ns | 8A | 30V | SILICON | SWITCHING | 1000V | 5V | 225W Tc | 8A | 850 mJ | 1kV | N-Channel | 3220pF @ 25V | 1.45 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| STF8N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf8n90k5-datasheets-2117.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STF8N | 900V | 130W Tc | 600mOhm | N-Channel | 5V @ 100μA | 8A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF20N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp20n50-datasheets-3525.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 6 Weeks | 2.27g | 230MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 38.5W | 1 | FET General Purpose Power | Not Qualified | 95 ns | 375ns | 105 ns | 100 ns | 20A | 30V | SILICON | ISOLATED | SWITCHING | 38.5W Tc | TO-220AB | 80A | 500V | N-Channel | 3120pF @ 25V | 230m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 59.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| NDTL03N150CG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | /files/onsemiconductor-ndtl03n150cg-datasheets-2129.pdf | TO-3PL | 39.9mm | 23.8mm | 15.6mm | Lead Free | 23 Weeks | 6.961991g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1 | Single | 140W | 150°C | 15 ns | 24ns | 47 ns | 140 ns | 2.5A | 30V | 1500V | 4V | 2.5W Ta 140W Tc | 1.5kV | N-Channel | 650pF @ 30V | 10.5 Ω @ 1.25A, 10V | 2.5A Ta | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R180C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp60r180c7xksa1-datasheets-2133.pdf | TO-220-3 | 20.7mm | Lead Free | 18 Weeks | Halogen Free | 1 | 68W | 150°C | PG-TO220-3-1 | 1.08nF | 9.3 ns | 50 ns | 13A | 20V | 600V | 600V | 68W Tc | 155mOhm | 600V | N-Channel | 1080pF @ 400V | 180mOhm @ 5.3A, 10V | 4V @ 260μA | 13A Tc | 24nC @ 10V | 180 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT260L | Alpha & Omega Semiconductor Inc. | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 16 Weeks | 330W | 1 | FET General Purpose Power | 140A | 20V | Single | 60V | 1.9W Ta 330W Tc | N-Channel | 14200pF @ 30V | 2.5m Ω @ 20A, 10V | 3.2V @ 250μA | 20A Ta 140A Tc | 180nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF7N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/stmicroelectronics-stf7n90k5-datasheets-2066.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STF7N | 900V | 110W Tc | 720mOhm | N-Channel | 5V @ 100μA | 7A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP48N20T | IXYS | $12.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta48n20t-datasheets-2323.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 26ns | 28 ns | 46 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 250W Tc | TO-220AB | 130A | 0.05Ohm | 500 mJ | 200V | N-Channel | 3000pF @ 25V | 50m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTP200N055T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta200n055t2-datasheets-3520.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 22ns | 27 ns | 49 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 500A | 0.0042Ohm | 600 mJ | 55V | N-Channel | 6800pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 200A Tc | 109nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PSMN4R3-100ES,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn4r3100es127-datasheets-1999.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 20 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 338W | 1 | 45 ns | 91ns | 63 ns | 122 ns | 120A | 20V | 100V | SILICON | DRAIN | SWITCHING | 338W Tc | 100V | N-Channel | 9900pF @ 50V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 170nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP076N12N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi076n12n3gaksa1-datasheets-3918.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 188W | 1 | Not Qualified | R-PSFM-T3 | 24 ns | 50ns | 10 ns | 39 ns | 100A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 188W Tc | TO-220AB | 400A | 0.0076Ohm | 230 mJ | N-Channel | 6640pF @ 60V | 7.6m Ω @ 100A, 10V | 4V @ 130μA | 100A Tc | 101nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FQP13N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp13n50-datasheets-2009.pdf | 500V | 12.5A | TO-220-3 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 430mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 170W | 1 | FET General Purpose Power | 40 ns | 140ns | 85 ns | 100 ns | 12.5A | 30V | 500V | SILICON | SWITCHING | 5V | 170W Tc | TO-220AB | 50A | 500V | N-Channel | 2300pF @ 25V | 5 V | 430m Ω @ 6.25A, 10V | 5V @ 250μA | 12.5A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| HUF75542P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75542p3-datasheets-2020.pdf | 80V | 75A | TO-220-3 | 31.75mm | 6.35mm | 6.35mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 230W | 1 | FET General Purpose Power | 12.5 ns | 117ns | 80 ns | 50 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 230W Tc | TO-220AB | 80V | N-Channel | 2750pF @ 25V | 14m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 180nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FQP85N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp85n06-datasheets-2030.pdf | 60V | 85A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 4.535924g | No SVHC | 10MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | 85A | e3 | Tin (Sn) | 60V | NOT SPECIFIED | Single | NOT SPECIFIED | 160W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 230ns | 170 ns | 175 ns | 85A | 25V | 60V | SILICON | SWITCHING | 4V | 160W Tc | TO-220AB | 60V | N-Channel | 4120pF @ 25V | 4 V | 10m Ω @ 42.5A, 10V | 4V @ 250μA | 85A Tc | 112nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||
| FDA18N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fda18n50-datasheets-2040.pdf | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 7 Weeks | 6.401g | No SVHC | 265MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 239W | 1 | FET General Purpose Power | 55 ns | 165ns | 90 ns | 95 ns | 19A | 30V | SILICON | 5V | 239W Tc | 76A | 945 mJ | 500V | N-Channel | 2860pF @ 25V | 265m Ω @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFB3207PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineon-irfb3207pbf-datasheets-1176.pdf | 75V | 180A | TO-220-3 | 10.6426mm | 4.82mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | 2.54mm | EAR99 | No | Single | 300W | 1 | FET General Purpose Power | 29 ns | 120ns | 74 ns | 68 ns | 180A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 330W Tc | TO-220AB | 75A | 720A | 0.0045Ohm | 75V | N-Channel | 7600pF @ 50V | 4 V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 170A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDP24N40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp24n40-datasheets-2057.pdf | TO-220-3 | 10.1mm | 15.38mm | 4.7mm | Lead Free | 3 | 6 Weeks | 1.8g | 175MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 227W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 90ns | 65 ns | 110 ns | 24A | 30V | SILICON | SWITCHING | 227W Tc | TO-220AB | 96A | 400V | N-Channel | 3020pF @ 25V | 175m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| TK65A10N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tk65a10n1s4x-datasheets-1964.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | 6.000006g | 3 | yes | No | 1 | Single | 1 | 44 ns | 19ns | 26 ns | 85 ns | 65A | 20V | SILICON | ISOLATED | SWITCHING | 100V | 45W Tc | TO-220AB | 296A | 0.0048Ohm | N-Channel | 5400pF @ 50V | 4.8m Ω @ 32.5A, 10V | 4V @ 1mA | 65A Tc | 81nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP28P065T | IXYS | $3.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta28p065t-datasheets-4647.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65V | 65V | 83W Tc | TO-220AB | 90A | 0.045Ohm | 200 mJ | P-Channel | 2030pF @ 25V | 45m Ω @ 14A, 10V | 4.5V @ 250μA | 28A Tc | 46nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||
| V50382-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHU78NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-phu78nq03lt127-datasheets-6160.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 107W Tc | 75A | 240A | 0.0135Ohm | 100 mJ | N-Channel | 970pF @ 12V | 9m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 11nC @ 4.5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AON6504_002 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6504-datasheets-0721.pdf | 8-PowerSMD, Flat Leads | 30V | 7.3W Ta 83W Tc | N-Channel | 2719pF @ 15V | 2.1m Ω @ 20A, 10V | 2.1V @ 250μA | 51A Ta 85A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN005-25D,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn00525d118-datasheets-6129.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 125W Tc | 75A | 240A | 0.0075Ohm | 120 mJ | N-Channel | 3500pF @ 20V | 5.8m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 60nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||
| PMR780SN,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmr780sn115-datasheets-6096.pdf | SC-75, SOT-416 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 530mW Tc | 0.55A | 0.92Ohm | N-Channel | 23pF @ 30V | 920m Ω @ 300mA, 10V | 3V @ 250μA | 550mA Ta | 1.05nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2830T1L-E2-AY#YW | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHP222NQ04LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb222nq04lt118-datasheets-6974.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | TO-220AB | 75A | 240A | 0.0035Ohm | 560 mJ | N-Channel | 7880pF @ 25V | 2.8m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 93.6nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||
| PHP112N06T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb112n06t118-datasheets-6352.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | TO-220AB | 75A | 400A | 0.008Ohm | 360 mJ | N-Channel | 4352pF @ 25V | 8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PSMN005-55P,127 | NXP USA Inc. | $9.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn00555b118-datasheets-7019.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 230W Tc | TO-220AB | 75A | 240A | 0.0067Ohm | 268 mJ | N-Channel | 6500pF @ 25V | 5.8m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 103nC @ 5V | 4.5V 10V | ±15V |
