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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF830PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 500V | 4.5A | TO-220-3 | Lead Free | 74W | TO-220AB | 4.5A | 20V | 500V | 74W Tc | 1.5Ohm | N-Channel | 610pF @ 25V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI90R1K2C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi90r1k2c3xksa1-datasheets-3771.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 6 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 900V | 900V | 83W Tc | 5.1A | 10A | 68 mJ | N-Channel | 710pF @ 100V | 1.2 Ω @ 2.8A, 10V | 3.5V @ 310μA | 5.1A Tc | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4H01NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4h01nt3g-datasheets-2984.pdf | 8-PowerTDFN | Lead Free | 36 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | not_compliant | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 334A | 20V | Single | 25V | 3.2W Ta 125W Tc | N-Channel | 5693pF @ 12V | 0.7m Ω @ 30A, 10V | 2.1V @ 250μA | 54A Ta 334A Tc | 85nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0604N3-G-P013 | Microchip Technology | $1.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0604n3g-datasheets-8697.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | EAR99 | HIGH INPUT IMPEDANCE | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 10 ns | 6ns | 20 ns | 25 ns | 700mA | 20V | SILICON | SWITCHING | 740mW Ta | 0.7A | 0.75Ohm | 50 pF | 40V | N-Channel | 190pF @ 20V | 750m Ω @ 1.5A, 10V | 1.6V @ 1mA | 700mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| PSMN057-200P,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn057200p127-datasheets-3701.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | NO | 3 | Single | 250W | 1 | 18 ns | 58ns | 78 ns | 105 ns | 39A | 20V | 200V | SILICON | DRAIN | SWITCHING | 250W Tc | 156A | 0.057Ohm | 200V | N-Channel | 3750pF @ 25V | 57m Ω @ 17A, 10V | 4V @ 1mA | 39A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPA65R660CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa65r660cfdxksa2-datasheets-3703.pdf | TO-220-3 Full Pack | 18 Weeks | compliant | 700V | 27.8W Tc | N-Channel | 615pF @ 100V | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3710LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf3710strlpbf-datasheets-0132.pdf | 100V | 57A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 14 Weeks | 23MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | 12 ns | 58ns | 47 ns | 45 ns | 57A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 49A | 280 mJ | 100V | N-Channel | 3130pF @ 25V | 23m Ω @ 28A, 10V | 4V @ 250μA | 57A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD70N12S3L12ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd70n12s3l12atma1-datasheets-3716.pdf | 2 | 14 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 70A | 280A | 0.0152Ohm | 410 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N0602N-S19-AY | Renesas Electronics America | $2.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-n0602ns19ay-datasheets-3720.pdf | TO-220-3 Isolated Tab | 16 Weeks | 3 | EAR99 | No | 3 | 35 ns | 12ns | 14 ns | 76 ns | 100A | 20V | 60V | 1.5W Ta 156W Tc | N-Channel | 7730pF @ 25V | 4.6m Ω @ 50A, 10V | 100A Ta | 133nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN7R8-120ESQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn7r8120esq-datasheets-3737.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | IEC-60134 | NO | SINGLE | 3 | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120V | 120V | 349W Tc | 70A | 280A | 0.0079Ohm | 386 mJ | N-Channel | 9473pF @ 60V | 7.9m Ω @ 25A, 10V | 4V @ 1mA | 70A Tc | 167nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| N0603N-S23-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-n0603ns23ay-datasheets-3739.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | 3 | EAR99 | No | 4 | 35 ns | 12ns | 14 ns | 76 ns | 100A | 20V | 60V | 1.5W Ta 156W Tc | N-Channel | 7730pF @ 25V | 4.6m Ω @ 50A, 10V | 100A Ta | 133nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK753R1-40E,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk753r140e127-datasheets-3741.pdf | TO-220-3 | 3 | 12 Weeks | 6.000006g | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | 3 | 1 | Single | 1 | 24 ns | 29ns | 32 ns | 54 ns | 100A | 20V | 40V | SILICON | DRAIN | SWITCHING | 234W Tc | TO-220AB | 798A | 40V | N-Channel | 6200pF @ 25V | 3.1m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 79nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHF9640S-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf9640sge3-datasheets-3744.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | 3 | 3W | 1 | D2PAK (TO-263) | 11A | 20V | 200V | 3W Ta 125W Tc | P-Channel | 1200pF @ 25V | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW7S65 | Alpha & Omega Semiconductor Inc. | $1.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | 7A | 650V | 104W Tc | N-Channel | 434pF @ 100V | 650m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 9.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK5A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 380pF | 18ns | 7 ns | 4.5A | 30V | 450V | 30W Tc | N-Channel | 380pF @ 25V | 1.75Ohm @ 2.3A, 10V | 4.4V @ 1mA | 4.5A Ta | 9nC @ 10V | 1.75 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7720DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7720dnt1ge3-datasheets-3680.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 3.8W | 1 | FET General Purpose Power | S-XDSO-C5 | 23 ns | 13ns | 12 ns | 29 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 3.8W Ta 52W Tc | 50A | 20 mJ | 30V | N-Channel | 1790pF @ 15V | 12.5m Ω @ 10A, 10V | 2.5V @ 250μA | 12A Tc | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| AOW482 | Alpha & Omega Semiconductor Inc. | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | 333W | 1 | 105A | 25V | 80V | 2.1W Ta 333W Tc | N-Channel | 4870pF @ 40V | 7.2m Ω @ 20A, 10V | 3.7V @ 250μA | 11A Ta 105A Tc | 81nC @ 10V | 7V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8062-H,LQ(CM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 2.9nF | 2.8ns | 9.5 ns | 28A | 20V | 30V | 1.6W Ta 42W Tc | N-Channel | 2900pF @ 10V | 5.6mOhm @ 14A, 10V | 2.3V @ 300μA | 28A Ta | 34nC @ 10V | 5.6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB50N12S3L15ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipi50n12s3l15aksa1-datasheets-7674.pdf | 2 | 14 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 50A | 200A | 0.0206Ohm | 330 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF380N60-F152 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcpf380n60f152-datasheets-3689.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | 2.565008g | 3 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 31W | 1 | 7 ns | 14ns | 45 ns | 6 ns | 10.2A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 31W Tc | TO-220AB | N-Channel | 1665pF @ 25V | 380m Ω @ 5A, 10V | 3.5V @ 250μA | 10.2A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD380P06NMATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 125W Tc | 35A | 140A | 0.038Ohm | 559 mJ | P-Channel | 2500pF @ 30V | 38m Ω @ 35A, 10V | 4V @ 1.7mA | 35A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK964R2-55B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk964r255b118-datasheets-3623.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 300W | 1 | R-PSSO-G2 | 63 ns | 232ns | 178 ns | 273 ns | 191A | 15V | 55V | SILICON | DRAIN | SWITCHING | 300W Tc | 75A | 765A | 0.0044Ohm | 1200 mJ | 55V | N-Channel | 10220pF @ 25V | 3.7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 95nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||
| TPCA8057-H,LQ(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 5.2nF | 4.3ns | 6.3 ns | 42A | 20V | 30V | 1.6W Ta 57W Tc | N-Channel | 5200pF @ 10V | 2.6mOhm @ 21A, 10V | 2.3V @ 500μA | 42A Ta | 61nC @ 10V | 2.6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI90R1K2C3XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi90r1k2c3xksa2-datasheets-3647.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | 900V | 83W Tc | N-Channel | 710pF @ 100V | 1.2 Ω @ 2.8A, 10V | 3.5V @ 310μA | 5.1A Tc | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8064-H,LQ(CM | Toshiba Semiconductor and Storage | $0.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 1.9nF | 3.4ns | 5.9 ns | 20A | 20V | 30V | 1.6W Ta 32W Tc | N-Channel | 1900pF @ 10V | 8.2mOhm @ 10A, 10V | 2.3V @ 200μA | 20A Ta | 23nC @ 10V | 8.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R660CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd65r660cfdbtma1-datasheets-0178.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 27.8W Tc | TO-220AB | 6A | 17A | 0.66Ohm | 115 mJ | N-Channel | 615pF @ 100V | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFD224 | Vishay Siliconix | $4.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd224pbf-datasheets-4973.pdf | 4-DIP (0.300, 7.62mm) | 6 Weeks | 4 | No | 4-DIP, Hexdip, HVMDIP | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 630mA | 20V | 250V | 1W Ta | N-Channel | 260pF @ 25V | 1.1Ohm @ 380mA, 10V | 4V @ 250μA | 630mA Ta | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP90R1K2C3XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp90r1k2c3xksa2-datasheets-3657.pdf | TO-220-3 | 18 Weeks | 900V | 83W Tc | N-Channel | 710pF @ 100V | 1.2 Ω @ 2.8A, 10V | 3.5V @ 310μA | 5.1A Tc | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3710STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf3710strlpbf-datasheets-0132.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 200W Tc | 57A | 180A | 0.023Ohm | 280 mJ | N-Channel | 3130pF @ 25V | 23m Ω @ 28A, 10V | 4V @ 250μA | 57A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK762R7-30B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk762r730b118-datasheets-3670.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 300W | 1 | R-PSSO-G2 | 31 ns | 107ns | 118 ns | 113 ns | 241A | 20V | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 75A | 967A | 0.0027Ohm | 30V | N-Channel | 6212pF @ 25V | 2.7m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 91nC @ 10V | 10V | ±20V |
