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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SPP80N06S2L-H5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2lh5-datasheets-1613.pdf | 55V | 80A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 320A | 0.0065Ohm | 700 mJ | N-Channel | 6640pF @ 25V | 5m Ω @ 80A, 10V | 2V @ 230μA | 80A Tc | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SPW17N80C3A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spw17n80c3a-datasheets-1963.pdf | 800V | 17A | TO-247-3 | Lead Free | 3 | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | Single | 208W | 1 | R-PSFM-T3 | 15ns | 6 ns | 72 ns | 17A | 20V | SILICON | SWITCHING | 227W Tc | 51A | 0.29Ohm | 670 mJ | 800V | N-Channel | 2320pF @ 25V | 290m Ω @ 11A, 10V | 3.9V @ 1mA | 17A Tc | 177nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPP80N04S2L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n04s2l03-datasheets-1487.pdf | 40V | 80A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 320A | 0.0045Ohm | 810 mJ | N-Channel | 7930pF @ 25V | 3.4m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 213nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SPP47N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb47n10l-datasheets-1377.pdf | 100V | 47A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 175W Tc | 188A | 0.04Ohm | 400 mJ | N-Channel | 2500pF @ 25V | 26m Ω @ 33A, 10V | 2V @ 2mA | 47A Tc | 135nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SPP80N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi80n10l-datasheets-1875.pdf | 100V | 80A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | MATTE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 14 ns | 60ns | 20 ns | 82 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250W Tc | TO-220AB | 0.024Ohm | 700 mJ | N-Channel | 4540pF @ 25V | 14m Ω @ 58A, 10V | 2V @ 2mA | 80A Tc | 240nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SPU02N60S5BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu02n60s5bkma1-datasheets-1918.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | no | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 600V | 600V | 25W Tc | 1.8A | 3.2A | 3Ohm | 50 mJ | N-Channel | 240pF @ 25V | 3 Ω @ 1.1A, 10V | 5.5V @ 80μA | 1.8A Tc | 9.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| HAF1002-90STL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-haf100290stle-datasheets-1921.pdf | -60V | -15A | SC-83 | Lead Free | 16 Weeks | 3 | No | 50W | 1 | 7.5 μs | 36μs | 29 μs | 32 μs | 15A | 3V | 60V | 50W Tc | P-Channel | 90m Ω @ 7.5A, 10V | 15A Ta | 4V 10V | +3V, -16V | |||||||||||||||||||||||||||||||||||||||||||
| SPP06N60C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-spp06n60c3hksa1-datasheets-1867.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 74W Tc | TO-220AB | 6.2A | 18.6A | 0.75Ohm | 200 mJ | N-Channel | 620pF @ 25V | 750m Ω @ 3.9A, 10V | 3.9V @ 260μA | 6.2A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPI20N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp20n65c3xksa1-datasheets-5034.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | No | PG-TO262-3-1 | 2.4nF | 10 ns | 5ns | 4.5 ns | 67 ns | 20.7A | 20V | 650V | 208W Tc | 190mOhm | N-Channel | 2400pF @ 25V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 20.7A Tc | 114nC @ 10V | 190 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPI80N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi80n10l-datasheets-1875.pdf | 100V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 1 | FET General Purpose Power | 14 ns | 60ns | 20 ns | 82 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250W Tc | 0.024Ohm | 700 mJ | N-Channel | 4540pF @ 25V | 14m Ω @ 58A, 10V | 2V @ 2mA | 80A Tc | 240nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SPP100N04S2L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n04s2l03-datasheets-1393.pdf | 40V | 100A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | 400A | 0.0044Ohm | 810 mJ | N-Channel | 8000pF @ 25V | 3.3m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SPP10N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi10n10l-datasheets-1671.pdf | 100V | 10.3A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 10.3A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50W Tc | TO-220AB | 42.2A | 0.21Ohm | 60 mJ | N-Channel | 444pF @ 25V | 154m Ω @ 8.1A, 10V | 2V @ 21μA | 10.3A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SPP47N10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb47n10-datasheets-1425.pdf | 100V | 47A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | 175W Tc | TO-220AB | 188A | 0.033Ohm | 400 mJ | N-Channel | 2500pF @ 25V | 33m Ω @ 33A, 10V | 4V @ 2mA | 47A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SPP80N06S2-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s205-datasheets-1483.pdf | 55V | 80A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | e0 | TIN LEAD | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 320A | 0.0051Ohm | 810 mJ | N-Channel | 6790pF @ 25V | 5.1m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| SPP80N03S2L04AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/infineontechnologies-spb80n03s2l04g-datasheets-1443.pdf | TO-220-3 | Lead Free | 52 Weeks | 3 | 188W | 1 | PG-TO220-3-1 | 3.9nF | 13 ns | 20ns | 19 ns | 54 ns | 80A | 20V | 30V | 188W Tc | N-Channel | 3900pF @ 25V | 4.2mOhm @ 80A, 10V | 2V @ 130μA | 80A Tc | 105nC @ 10V | 4.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SPP80N04S2-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n04s204-datasheets-1491.pdf | 40V | 80A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 320A | 0.0037Ohm | 810 mJ | N-Channel | 6980pF @ 25V | 3.7m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SPP80N06S2-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s207-datasheets-1523.pdf | 55V | 80A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED | No | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | 16 ns | 37ns | 36 ns | 61 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 250W Tc | TO-220AB | 0.0066Ohm | N-Channel | 4540pF @ 25V | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 80A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| SPP80N06S2-09 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s209-datasheets-1511.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 190W Tc | TO-220AB | 80A | 320A | 0.0091Ohm | 370 mJ | N-Channel | 3140pF @ 25V | 9.1m Ω @ 50A, 10V | 4V @ 125μA | 80A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SPI80N06S-08 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi80n06s08-datasheets-1842.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | no | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 300W Tc | 80A | 320A | 0.008Ohm | 700 mJ | N-Channel | 3660pF @ 25V | 8m Ω @ 80A, 10V | 4V @ 240μA | 80A Tc | 187nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPI60R299CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi60r299cpxksa1-datasheets-1845.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 96W Tc | 11A | 34A | 0.299Ohm | 290 mJ | N-Channel | 1100pF @ 100V | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 11A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPN02N60C3 E6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spn02n60c3-datasheets-1834.pdf | TO-261-4, TO-261AA | 650V | 1.8W Ta | N-Channel | 200pF @ 25V | 2.5 Ω @ 1.1A, 10V | 3.9V @ 80μA | 400mA Ta | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SN7002N E6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sn7002ne6433-datasheets-1858.pdf | TO-236-3, SC-59, SOT-23-3 | unknown | YES | FET General Purpose Power | Single | 60V | 360mW Ta | 0.2A | N-Channel | 45pF @ 25V | 5 Ω @ 500mA, 10V | 1.8V @ 26μA | 200mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPP02N60S5HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp02n60s5hksa1-datasheets-1862.pdf | TO-220-3 | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | Not Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 1.8A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25W Tc | TO-220AB | 3Ohm | 50 mJ | N-Channel | 240pF @ 25V | 3 Ω @ 1.1A, 10V | 5.5V @ 80μA | 1.8A Tc | 9.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| SPP04N60S5BKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp04n60s5bksa1-datasheets-1796.pdf | TO-220-3 | 600V | 50W Tc | N-Channel | 580pF @ 25V | 950m Ω @ 2.8A, 10V | 5.5V @ 200μA | 4.5A Tc | 22.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP11N60CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp11n60cfdxksa1-datasheets-1801.pdf | TO-220-3 | PG-TO220-3-1 | 650V | 125W Tc | N-Channel | 1200pF @ 25V | 440mOhm @ 7A, 10V | 5V @ 500μA | 11A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP80N04S2-H4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n04s2h4-datasheets-1603.pdf | 40V | 80A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 320A | 0.004Ohm | 660 mJ | N-Channel | 5890pF @ 25V | 4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 148nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SPP100N04S2-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n04s204-datasheets-1331.pdf | 40V | 100A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | 400A | 0.0036Ohm | 810 mJ | N-Channel | 7220pF @ 25V | 3.6m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 172nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPP100N08S2L-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n08s2l07-datasheets-1421.pdf | 75V | 100A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 400A | 0.0087Ohm | 810 mJ | N-Channel | 7130pF @ 25V | 6.8m Ω @ 68A, 10V | 2V @ 250μA | 100A Tc | 246nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SPP70N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb70n10l-datasheets-1535.pdf | 100V | 70A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | 260 | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 250ns | 95 ns | 250 ns | 70A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | TO-220AB | 280A | 0.025Ohm | 700 mJ | 100V | N-Channel | 4540pF @ 25V | 16m Ω @ 50A, 10V | 2V @ 2mA | 70A Tc | 240nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SPP11N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa11n65c3xksa1-datasheets-1256.pdf | 650V | 11A | TO-220-3 | Lead Free | 17 Weeks | 3 | Halogen Free | Single | 125W | PG-TO220-3-1 | 1.2nF | 10 ns | 5ns | 5 ns | 44 ns | 11A | 20V | 650V | 650V | 125W Tc | 380mOhm | 650V | N-Channel | 1200pF @ 25V | 380mOhm @ 7A, 10V | 3.9V @ 500μA | 11A Tc | 60nC @ 10V | 380 mΩ | 10V | ±20V |
