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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SPA07N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi07n65c3hksa1-datasheets-1625.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | yes | AVALANCHE RATED | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 32W Tc | TO-220AB | 7.3A | 21.9A | 0.6Ohm | 230 mJ | N-Channel | 790pF @ 25V | 600m Ω @ 4.6A, 10V | 3.9V @ 350μA | 7.3A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| HAT2140H-EL-E | Renesas Electronics America | $10.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2140hele-datasheets-2082.pdf | 100V | 25A | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 30W | 1 | FET General Purpose Power | R-PSSO-G4 | 25 ns | 24ns | 12 ns | 100 ns | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30W Tc | N-Channel | 6500pF @ 10V | 16m Ω @ 12.5A, 10V | 25A Ta | 105nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC059N03S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc059n03sg-datasheets-2079.pdf | 8-PowerTDFN | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | MATTE TIN | YES | DUAL | FLAT | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 17.5W Ta 48W Tc | 17.5A | 200A | 0.0086Ohm | 150 mJ | N-Channel | 2670pF @ 15V | 5.5m Ω @ 50A, 10V | 2V @ 35μA | 17.5A Ta 73A Tc | 21nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPP80N08S2L-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n08s2l07-datasheets-1503.pdf | 75V | 80A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 300W | 1 | FET General Purpose Power | Not Qualified | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 0.009Ohm | N-Channel | 6820pF @ 25V | 7.1m Ω @ 67A, 10V | 2V @ 250μA | 80A Tc | 233nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPU18P06P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | -60V | -18.6A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | 80W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 80W | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 5.8ns | 11 ns | 24.5 ns | 18.6A | 20V | 60V | 74.4A | 0.13Ohm | 150 mJ | -60V | P-Channel | 860pF @ 25V | 130m Ω @ 13.2A, 10V | 4V @ 1mA | 18.6A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDA75N28 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fda75n28-datasheets-2020.pdf | TO-3P-3, SC-65-3 | TO-3PN | 280V | 520W Tc | N-Channel | 6700pF @ 25V | 41mOhm @ 37.5A, 10V | 5V @ 250μA | 75A Tc | 144nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW11N60C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spw11n60c3fksa1-datasheets-2021.pdf | TO-247-3 | 3 | yes | AVALANCHE RATED | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 600V | 125W Tc | TO-247AD | 11A | 33A | 0.38Ohm | 340 mJ | N-Channel | 1200pF @ 25V | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 11A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SPU04N60S5BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu04n60s5bkma1-datasheets-1983.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | 3 | no | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | Not Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 4.5A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50W Tc | 9A | 0.95Ohm | N-Channel | 580pF @ 25V | 950m Ω @ 2.8A, 10V | 5.5V @ 200μA | 4.5A Tc | 22.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SPP80N06S2-08 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s208-datasheets-1543.pdf | 55V | 80A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED | 80A | unknown | e3 | MATTE TIN | 55V | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 215W Tc | TO-220AB | 0.008Ohm | 450 mJ | N-Channel | 3800pF @ 25V | 8m Ω @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPU01N60C3BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu01n60c3bkma1-datasheets-1991.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 600V | 11W Tc | 0.8A | 1.6A | 6Ohm | 20 mJ | N-Channel | 100pF @ 25V | 6 Ω @ 500mA, 10V | 3.9V @ 250μA | 800mA Tc | 5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SPI21N10 | Infineon Technologies | $0.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp21n10-datasheets-5988.pdf | 100V | 21A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 90W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 56ns | 23 ns | 37 ns | 21A | 20V | SILICON | 90W Tc | 84A | 0.08Ohm | 130 mJ | 100V | N-Channel | 865pF @ 25V | 80m Ω @ 15A, 10V | 4V @ 44μA | 21A Tc | 38.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPW11N60CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spw11n60cfdfksa1-datasheets-2000.pdf | TO-247-3 | 3 | yes | AVALANCHE RATED | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 125W Tc | 11A | 28A | 0.44Ohm | 340 mJ | N-Channel | 1200pF @ 25V | 440m Ω @ 7A, 10V | 5V @ 500μA | 11A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDAF75N28 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdaf75n28-datasheets-2005.pdf | 280V | 46A | TO-3P-3 Full Pack | Lead Free | No SVHC | 3 | Single | 215W | 1 | 580ns | 310 ns | 190 ns | 46A | 30V | 280V | 215W Tc | 280V | N-Channel | 6700pF @ 25V | 5 V | 41m Ω @ 23A, 10V | 5V @ 250μA | 46A Tc | 144nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2261H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2261hele-datasheets-2006.pdf | 30V | 45A | SC-100, SOT-669 | Lead Free | 16 Weeks | 5 | No | 12 ns | 35ns | 7.5 ns | 55 ns | 45A | 20V | 25W Tc | N-Channel | 4400pF @ 10V | 3.8m Ω @ 22.5A, 10V | 45A Ta | 27nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2143H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2143hele-datasheets-2008.pdf | 30V | 40A | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 1 | FET General Purpose Power | R-PSSO-G4 | 20 ns | 56ns | 15 ns | 76 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20W Tc | 160A | N-Channel | 2450pF @ 10V | 6.1m Ω @ 20A, 10V | 40A Ta | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDAF62N28 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdaf62n28-datasheets-2011.pdf | 280V | 36A | TO-3P-3 Full Pack | Lead Free | No SVHC | 3 | Single | 165W | TO-3PF | 4.63nF | 560ns | 220 ns | 110 ns | 36A | 30V | 280V | 280V | 165W Tc | 51mOhm | 280V | N-Channel | 4630pF @ 25V | 5 V | 51mOhm @ 18A, 10V | 5V @ 250μA | 36A Tc | 100nC @ 10V | 51 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| FDD6N50TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd6n50tf-datasheets-2012.pdf | 500V | 24A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | No | FDD6N50 | Single | 89W | 6 ns | 55ns | 35 ns | 25 ns | 6A | 30V | 89W Tc | 500V | N-Channel | 940pF @ 25V | 900m Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 16.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPN03N60S5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spn03n60s5-datasheets-2013.pdf | 600V | 700mA | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.5mm | Contains Lead | 4 | 4 | EAR99 | HIGH VOLTAGE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 4 | 40 | 1.8W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 20ns | 20 ns | 120 ns | 700mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.8W Ta | 0.7A | 3A | 100 mJ | 600V | N-Channel | 440pF @ 25V | 1.4 Ω @ 2A, 10V | 5.5V @ 135μA | 700mA Ta | 12.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SPW17N80C3A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spw17n80c3a-datasheets-1963.pdf | 800V | 17A | TO-247-3 | Lead Free | 3 | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | Single | 208W | 1 | R-PSFM-T3 | 15ns | 6 ns | 72 ns | 17A | 20V | SILICON | SWITCHING | 227W Tc | 51A | 0.29Ohm | 670 mJ | 800V | N-Channel | 2320pF @ 25V | 290m Ω @ 11A, 10V | 3.9V @ 1mA | 17A Tc | 177nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPP80N04S2L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n04s2l03-datasheets-1487.pdf | 40V | 80A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 320A | 0.0045Ohm | 810 mJ | N-Channel | 7930pF @ 25V | 3.4m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 213nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPU30N03S2-08 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu30n03s208-datasheets-1970.pdf | 30V | 30A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | 125W Tc | 120A | 0.0082Ohm | 250 mJ | N-Channel | 2170pF @ 25V | 8.2m Ω @ 30A, 10V | 4V @ 85μA | 30A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPU03N60S5BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu03n60s5bkma1-datasheets-1974.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | no | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 38W Tc | 3.2A | 5.7A | 100 mJ | N-Channel | 420pF @ 25V | 1.4 Ω @ 2A, 10V | 5.5V @ 135μA | 3.2A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPP80N06S2L-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2l07-datasheets-1583.pdf | 55V | 80A | TO-220-3 | Contains Lead | 3 | Unknown | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | 80A | e3 | MATTE TIN | 55V | SINGLE | 3 | 210W | 1 | FET General Purpose Power | 18 ns | 35ns | 31 ns | 28 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 210W Tc | TO-220AB | 450 mJ | N-Channel | 4210pF @ 25V | 1.6 V | 7m Ω @ 60A, 10V | 2V @ 150μA | 80A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SPU11N10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd11n10-datasheets-5972.pdf | 100V | 10.5A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 10.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50W Tc | 41.2A | 0.17Ohm | 60 mJ | N-Channel | 400pF @ 25V | 170m Ω @ 7.8A, 10V | 4V @ 21μA | 10.5A Tc | 18.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPP80N06S2L-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2l05-datasheets-1499.pdf | 55V | 80A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 0.006Ohm | 800 mJ | N-Channel | 7530pF @ 25V | 4.8m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SPB80N03S2L-05 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp80n03s2l05aksa1-datasheets-7865.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 167W Tc | N-Channel | 3320pF @ 25V | 4.9m Ω @ 55A, 10V | 2V @ 110μA | 80A Tc | 89.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPU07N60S5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spd07n60s5-datasheets-5149.pdf | 600V | 7.3A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 10 Weeks | 3 | yes | AVALANCHE RATED, HIGH VOLTAGE | Tin | e3 | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 83W | 1 | FET General Purpose Power | Not Qualified | 120 ns | 40ns | 20 ns | 170 ns | 7.3A | 20V | SILICON | SWITCHING | 83W Tc | 14.6A | 0.6Ohm | 600V | N-Channel | 970pF @ 25V | 600m Ω @ 4.6A, 10V | 5.5V @ 350μA | 7.3A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPP77N06S2-12 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb77n06s212-datasheets-1495.pdf | 55V | 80A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 158W Tc | TO-220AB | 77A | 320A | 0.012Ohm | 280 mJ | N-Channel | 2350pF @ 25V | 12m Ω @ 38A, 10V | 4V @ 93μA | 80A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPP80N06S2L-06 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2l06-datasheets-1559.pdf | 55V | 80A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250W Tc | TO-220AB | 0.0084Ohm | N-Channel | 5050pF @ 25V | 6.3m Ω @ 69A, 10V | 2V @ 180μA | 80A Tc | 150nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPP80N06S2-H5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2h5-datasheets-1547.pdf | 55V | 80A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 320A | 0.0055Ohm | 700 mJ | N-Channel | 5500pF @ 25V | 5.5m Ω @ 80A, 10V | 4V @ 230μA | 80A Tc | 155nC @ 10V | 10V | ±20V |
