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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SN7002N E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sn7002ne6433-datasheets-1858.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 0.2A | 5Ohm | 4.2 pF | N-Channel | 45pF @ 25V | 5 Ω @ 500mA, 10V | 1.8V @ 26μA | 200mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPP80N03S2-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n03s203gatma1-datasheets-1455.pdf | 30V | 80A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | N-Channel | 7020pF @ 25V | 3.4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC020N025S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc020n025sg-datasheets-2085.pdf | 8-PowerTDFN | 5 | EAR99 | AVALANCHE RATED | compliant | e3 | MATTE TIN | YES | DUAL | FLAT | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.8W Ta 104W Tc | 29A | 200A | 0.0031Ohm | 800 mJ | N-Channel | 8290pF @ 15V | 2m Ω @ 50A, 10V | 2V @ 110μA | 30A Ta 100A Tc | 66nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSL307SPL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsl307sp-datasheets-5489.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 6 | yes | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | No | DUAL | GULL WING | 6 | 2W | 1 | 7.3 ns | 8.4ns | 29 ns | 36.4 ns | 5.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 2W Ta | 22A | 0.043Ohm | 44 mJ | P-Channel | 805pF @ 25V | 43m Ω @ 5.5A, 10V | 2V @ 40μA | 5.5A Ta | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| HAT2171H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2171hele-datasheets-2114.pdf | 40V | 40A | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 25W | 1 | FET General Purpose Power | R-PSSO-G4 | 14 ns | 30ns | 5.5 ns | 41 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25W Tc | 0.006Ohm | N-Channel | 3750pF @ 10V | 4.8m Ω @ 20A, 10V | 40A Ta | 52nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SPI80N03S2L-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n03s2l04g-datasheets-1443.pdf | 30V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 188W Tc | 320A | 0.0065Ohm | 380 mJ | N-Channel | 3900pF @ 25V | 4.2m Ω @ 80A, 10V | 2V @ 130μA | 80A Tc | 105nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDAF59N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdaf59n30-datasheets-2124.pdf | TO-3P-3 Full Pack | TO-3PF | 300V | 161W Tc | N-Channel | 4670pF @ 25V | 56mOhm @ 17A, 10V | 5V @ 250μA | 34A Tc | 100nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP80N06S2L-09 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-spb80n06s2l09-datasheets-1617.pdf | 55V | 80A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 190W Tc | TO-220AB | 320A | 0.0113Ohm | 370 mJ | N-Channel | 3480pF @ 25V | 8.5m Ω @ 52A, 10V | 2V @ 125μA | 80A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8672S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms8672s-datasheets-2132.pdf | 30V | 35A | 8-PowerTDFN | Lead Free | 8 | 2.5W | 1 | 8-PQFN (5x6) | 2.515nF | 17ns | 7 ns | 27 ns | 35A | 20V | 30V | 2.5W Ta 50W Tc | 5mOhm | 30V | N-Channel | 2515pF @ 15V | 5mOhm @ 17A, 10V | 3V @ 1mA | 17A Ta 35A Tc | 47nC @ 10V | 5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO119N03S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-bso119n03s-datasheets-2139.pdf | 30V | 9A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | No SVHC | 16.3mOhm | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 40 | 1.56W | 1 | FET General Purpose Power | Not Qualified | 3.8ns | 3.8 ns | 18 ns | 9A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.6V | 1.56W Ta | MS-012AA | 9A | 93 pF | 30V | N-Channel | 1730pF @ 15V | 1.6 V | 11.9m Ω @ 11A, 10V | 2V @ 25μA | 9A Ta | 13nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPI80N06S3L06XK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80n06s3l06-datasheets-1198.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | PG-TO262-3 | 9.417nF | 80A | 55V | 136W Tc | N-Channel | 9417pF @ 25V | 5.9mOhm @ 56A, 10V | 2.2V @ 80μA | 80A Tc | 196nC @ 10V | 5.9 mΩ | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2174H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2174hele-datasheets-2146.pdf | 100V | 20A | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 1 | FET General Purpose Power | R-PSSO-G4 | 18 ns | 13ns | 5.5 ns | 31 ns | 20A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20W Tc | 80A | 0.03Ohm | N-Channel | 2280pF @ 10V | 27m Ω @ 10A, 10V | 20A Ta | 33.5nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSO072N03S | Infineon Technologies | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso072n03s-datasheets-2136.pdf | 30V | 12A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 40 | 1.56W | 1 | FET General Purpose Power | Not Qualified | 5.4ns | 5.4 ns | 27 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.56W Ta | MS-012AA | 160 pF | 30V | N-Channel | 3230pF @ 15V | 6.8m Ω @ 15A, 10V | 2V @ 45μA | 12A Ta | 25nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPP80N03S2L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n03s2l03g-datasheets-1447.pdf | 30V | 80A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 810 mJ | N-Channel | 8180pF @ 25V | 3.1m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 220nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SPA03N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spa03n60c3xksa1-datasheets-2195.pdf | 650V | 3.2A | TO-220-3 Full Pack | 10.36mm | 9.45mm | 4.57mm | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 29.7W | 1 | Not Qualified | 7 ns | 3ns | 12 ns | 64 ns | 3.2A | 20V | SILICON | ISOLATED | SWITCHING | 3V | 29.7W Tc | TO-220AB | 9.6A | 100 mJ | 600V | N-Channel | 400pF @ 25V | 1.4 Ω @ 2A, 10V | 3.9V @ 135μA | 3.2A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSC119N03S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc119n03sg-datasheets-2107.pdf | 8-PowerTDFN | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | FLAT | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 43W Tc | 11.9A | 120A | 0.0119Ohm | 60 mJ | N-Channel | 1370pF @ 15V | 11.9m Ω @ 30A, 10V | 2V @ 20μA | 11.9A Ta 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSC029N025S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc029n025sg-datasheets-2159.pdf | 8-PowerTDFN | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.8W Ta 78W Tc | 24A | 200A | 0.0045Ohm | 680 mJ | N-Channel | 5090pF @ 15V | 2.9m Ω @ 50A, 10V | 2V @ 80μA | 24A Ta 100A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSL211SPL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsl211sp-datasheets-5564.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 6 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 2W | 1 | Not Qualified | 8.7 ns | 13.9ns | 23.3 ns | 25 ns | 4.7A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 2W Ta | P-Channel | 654pF @ 15V | 67m Ω @ 4.7A, 4.5V | 1.2V @ 25μA | 4.7A Ta | 12.4nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SPP10N10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi10n10-datasheets-1663.pdf | 100V | 10.3A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | 10.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 50W Tc | TO-262AA | 60 mJ | N-Channel | 426pF @ 25V | 170m Ω @ 7.8A, 10V | 4V @ 21μA | 10.3A Tc | 19.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SPP80N08S2-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n08s207-datasheets-1531.pdf | 75V | 80A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 300W | 1 | FET General Purpose Power | Not Qualified | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 0.0074Ohm | N-Channel | 6130pF @ 25V | 7.4m Ω @ 66A, 10V | 4V @ 250μA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQN1N50CBU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 500V | 890mW Ta 2.08W Tc | N-Channel | 195pF @ 25V | 6Ohm @ 190mA, 10V | 4V @ 250μA | 380mA Tc | 6.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SN7002W E6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sn7002we6433-datasheets-2036.pdf | SC-70, SOT-323 | unknown | YES | FET General Purpose Power | Single | 60V | 500mW Ta | 0.23A | N-Channel | 45pF @ 25V | 5 Ω @ 230mA, 10V | 1.8V @ 26μA | 230mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPN03N60C3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/infineontechnologies-spn03n60c3-datasheets-2040.pdf | 650V | 700mA | TO-261-4, TO-261AA | Contains Lead | 4 | 3 | EAR99 | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1.8W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 3ns | 3 ns | 64 ns | 700mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8W Ta | 0.7A | 3A | 650V | N-Channel | 400pF @ 25V | 3 V | 1.4 Ω @ 2A, 10V | 3.9V @ 135μA | 700mA Ta | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDFS2P753Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdfs2p753z-datasheets-2044.pdf | -30V | -3A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 27 Weeks | 230.4mg | No SVHC | 115MOhm | 8 | CONSULT SALES OFFICE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 1.6mW | 1 | Other Transistors | 2mA | 7 ns | 31ns | 31 ns | 18 ns | 3A | 25V | SILICON | 30V | -2.1V | 1.6W Ta | 3A | 6 mJ | -30V | P-Channel | 455pF @ 10V | 115m Ω @ 3A, 10V | 3V @ 250μA | 3A Ta | 9.3nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||
| SPU30P06P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd30p06p-datasheets-5825.pdf | -60V | -30A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 125W | 1 | Not Qualified | R-PSIP-T3 | 11ns | 20 ns | 30 ns | 30A | 20V | SILICON | DRAIN | 60V | 125W Tc | 120A | 0.075Ohm | 250 mJ | -60V | P-Channel | 1535pF @ 25V | 75m Ω @ 21.5A, 10V | 4V @ 1.7mA | 30A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQB7N65CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/onsemiconductor-fqb7n65ctm-datasheets-2056.pdf | 650V | 7A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | No SVHC | 2 | Single | 173W | 1 | D2PAK (TO-263AB) | 1.245nF | 50ns | 55 ns | 90 ns | 7A | 30V | 650V | 4V | 173W Tc | 1.4Ohm | 650V | N-Channel | 1245pF @ 25V | 1.4Ohm @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 36nC @ 10V | 1.4 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSA223SP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsa223sp-datasheets-2057.pdf | -20V | -390mA | SC-75, SOT-416 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | DUAL | GULL WING | 260 | 3 | NOT SPECIFIED | 250mW | 1 | Other Transistors | Not Qualified | 390mA | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 250mW Ta | 22 pF | P-Channel | 56pF @ 15V | 1.2 Ω @ 390mA, 4.5V | 1.2V @ 1.5μA | 390mA Ta | 0.62nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SPW11N60S5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spw11n60s5fksa1-datasheets-2061.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 11A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 125W Tc | 22A | N-Channel | 1460pF @ 25V | 380m Ω @ 7A, 10V | 5.5V @ 500μA | 11A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPA07N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi07n65c3hksa1-datasheets-1625.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | yes | AVALANCHE RATED | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 32W Tc | TO-220AB | 7.3A | 21.9A | 0.6Ohm | 230 mJ | N-Channel | 790pF @ 25V | 600m Ω @ 4.6A, 10V | 3.9V @ 350μA | 7.3A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| HAT2140H-EL-E | Renesas Electronics America | $10.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2140hele-datasheets-2082.pdf | 100V | 25A | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 30W | 1 | FET General Purpose Power | R-PSSO-G4 | 25 ns | 24ns | 12 ns | 100 ns | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30W Tc | N-Channel | 6500pF @ 10V | 16m Ω @ 12.5A, 10V | 25A Ta | 105nC @ 10V | 7V 10V | ±20V |
