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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AOWF11N70 | Alpha & Omega Semiconductor Inc. | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 2.15nF | 11A | 700V | 28W Tc | N-Channel | 2150pF @ 25V | 870mOhm @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 45nC @ 10V | 870 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70N12S311ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd70n12s311atma1-datasheets-2864.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 120V | 120V | 125W Tc | 70A | 280A | 0.0111Ohm | 410 mJ | N-Channel | 4355pF @ 25V | 11.1m Ω @ 70A, 10V | 4V @ 83μA | 70A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIE864DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie864dft1ge3-datasheets-2866.pdf | 10-PolarPAK® (U) | 4 | 21 Weeks | 10 | yes | EAR99 | e3 | PURE MATTE TIN | DUAL | NO LEAD | 260 | 10 | Single | 30 | 25W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N4 | 45A | SILICON | DRAIN SOURCE | SWITCHING | 5.2W Ta 25W Tc | 23A | 0.0073Ohm | 31 mJ | 30V | N-Channel | 1510pF @ 15V | 5.6m Ω @ 20A, 10V | 2V @ 250μA | 45A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPB100N06S3-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100n06s304-datasheets-1023.pdf | 55V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 214W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 62ns | 62 ns | 62 ns | 100A | 20V | SILICON | DRAIN | 214W Tc | 400A | 450 mJ | 55V | N-Channel | 14230pF @ 25V | 4.1m Ω @ 80A, 10V | 4V @ 150μA | 100A Tc | 314nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SPB16N50C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spb16n50c3atma1-datasheets-2729.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 560V | 500V | 160W Tc | 16A | 48A | 0.28Ohm | 460 mJ | N-Channel | 1600pF @ 25V | 280m Ω @ 10A, 10V | 3.9V @ 675μA | 16A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SPB03N60S5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb03n60s5atma1-datasheets-2743.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | AVALANCHE RATED | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 600V | 600V | 38W Tc | 3.2A | 5.7A | 100 mJ | N-Channel | 420pF @ 25V | 1.4 Ω @ 2A, 10V | 5.5V @ 135μA | 3.2A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPB04N60S5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spb04n60s5atma1-datasheets-2756.pdf | 600V | 4.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | no | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | R-PSSO-G2 | 55 ns | 30ns | 15 ns | 60 ns | 4.5A | 20V | 600V | SILICON | 50W Tc | 9A | 0.95Ohm | 600V | N-Channel | 580pF @ 25V | 950m Ω @ 2.8A, 10V | 5.5V @ 200μA | 4.5A Tc | 22.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IPD03N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips03n03lbg-datasheets-1262.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 115W Tc | TO-252AA | 90A | 360A | 0.0049Ohm | 240 mJ | N-Channel | 5200pF @ 15V | 3.3m Ω @ 60A, 10V | 2V @ 70μA | 90A Tc | 40nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPBH6N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipbh6n03lag-datasheets-2693.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 71W Tc | 50A | 350A | 0.0062Ohm | 150 mJ | N-Channel | 2390pF @ 15V | 6.2m Ω @ 50A, 10V | 2V @ 30μA | 50A Tc | 19nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPB11N60S5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb11n60s5atma1-datasheets-2801.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 600V | 600V | 125W Tc | 11A | 22A | 0.38Ohm | 340 mJ | N-Channel | 1460pF @ 25V | 380m Ω @ 7A, 10V | 5.5V @ 500μA | 11A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPD800N06NGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-ipd800n06ngbtma1-datasheets-2717.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 4 | 47W | 1 | R-PSSO-G2 | 7 ns | 38ns | 27 ns | 22 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 47W Tc | TO-252AA | 64A | 0.08Ohm | 43 mJ | N-Channel | 370pF @ 30V | 80m Ω @ 16A, 10V | 4V @ 16μA | 16A Tc | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SPB08P06PGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-spb08p06pgatma1-datasheets-2816.pdf | -60V | -8.8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | 3 | no | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 42W | 1 | Not Qualified | R-PSSO-G2 | 16 ns | 46ns | 14 ns | 48 ns | 8.8A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 42W Tc | 70 mJ | P-Channel | 420pF @ 25V | 300m Ω @ 6.2A, 10V | 4V @ 250μA | 8.8A Ta | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| HAT2088R-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2088rele-datasheets-2669.pdf | 200V | 2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 8 | yes | EAR99 | No | DUAL | GULL WING | 260 | 8 | 20 | 2.5W | 1 | FET General Purpose Power | 19 ns | 8.5ns | 11 ns | 48 ns | 2A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 2A | 0.44Ohm | N-Channel | 450pF @ 25V | 440m Ω @ 1A, 10V | 2A Ta | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| SPB04N50C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb04n50c3atma1-datasheets-2672.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 560V | 500V | 50W Tc | 4.5A | 13.5A | 0.95Ohm | 130 mJ | N-Channel | 470pF @ 25V | 950m Ω @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SN7002W E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-sn7002we6433-datasheets-2036.pdf | SC-70, SOT-323 | EAR99 | unknown | YES | FET General Purpose Power | Single | 60V | 500mW Ta | 0.23A | N-Channel | 45pF @ 25V | 5 Ω @ 230mA, 10V | 1.8V @ 26μA | 230mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S3L-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s3l05-datasheets-1085.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 165W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 49ns | 41 ns | 65 ns | 80A | 16V | SILICON | DRAIN | SWITCHING | 165W Tc | 320A | 0.0077Ohm | 345 mJ | 55V | N-Channel | 13060pF @ 25V | 4.5m Ω @ 69A, 10V | 2.2V @ 115μA | 80A Tc | 273nC @ 10V | 5V 10V | ±16V | |||||||||||||||||||||||||||
| IPB45N06S3L-13 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi45n06s3l13-datasheets-0964.pdf | 55V | 45A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 65W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 46ns | 124 ns | 58 ns | 45A | 16V | SILICON | DRAIN | 65W Tc | 95 mJ | 55V | N-Channel | 3600pF @ 25V | 13.1m Ω @ 26A, 10V | 2.2V @ 30μA | 45A Tc | 75nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||
| HAT2267H-EL-E | Renesas Electronics America | $6.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2267hele-datasheets-2549.pdf | 80V | 25A | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 1 | FET General Purpose Power | R-PSSO-G4 | 7.5 ns | 9ns | 5 ns | 35 ns | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25W Tc | N-Channel | 2150pF @ 10V | 16m Ω @ 12.5A, 10V | 25A Ta | 30nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPB13N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb13n03lbg-datasheets-2555.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 52W Tc | N-Channel | 1355pF @ 15V | 12.5m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD12N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd12n03lbg-datasheets-2559.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 52W Tc | TO-252AA | 30A | 120A | 0.0116Ohm | 64 mJ | N-Channel | 1300pF @ 15V | 11.6m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPD144N06NGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd144n06ngbtma1-datasheets-2563.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 25 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 135W | 1 | Not Qualified | R-PSSO-G2 | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 136W Tc | TO-252AA | 200A | 240 mJ | N-Channel | 1900pF @ 30V | 14.4m Ω @ 50A, 10V | 4V @ 80μA | 50A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IPB45N06S3-16 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi45n06s316-datasheets-1056.pdf | 55V | 45A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 65W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 61ns | 68 ns | 26 ns | 45A | 20V | SILICON | DRAIN | 65W Tc | 95 mJ | 55V | N-Channel | 2980pF @ 25V | 15.4m Ω @ 23A, 10V | 4V @ 30μA | 45A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| BSP317PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp317pe6327-datasheets-5692.pdf | TO-261-4, TO-261AA | No | PG-SOT223-4 | 262pF | 5.7 ns | 11.1ns | 67 ns | 254 ns | 430mA | 20V | 250V | 1.8W Ta | P-Channel | 262pF @ 25V | 4Ohm @ 430mA, 10V | 2V @ 370μA | 430mA Ta | 15.1nC @ 10V | 4 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB120N06N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp120n06ngaksa1-datasheets-1226.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | unknown | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 158W Tc | 75A | 300A | 0.0117Ohm | 280 mJ | N-Channel | 2100pF @ 30V | 11.7m Ω @ 75A, 10V | 4V @ 94μA | 75A Tc | 62nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSP613PL6327HUSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp613pl6327husa1-datasheets-2524.pdf | TO-261-4, TO-261AA | 4 | No | 1.8W | 1 | PG-SOT223-4 | 875pF | 6.7 ns | 9ns | 7 ns | 26 ns | 2.9A | 20V | 60V | 1.8W Ta | P-Channel | 875pF @ 25V | 130mOhm @ 2.9A, 10V | 4V @ 1mA | 2.9A Ta | 33nC @ 10V | 130 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPP80N06S08AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/infineontechnologies-spi80n06s08-datasheets-1842.pdf | TO-220-3 | 3 | no | EAR99 | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 300W Tc | TO-220AB | 80A | 320A | 0.008Ohm | 700 mJ | N-Channel | 3660pF @ 25V | 8m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 187nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB070N06L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp070n06lg-datasheets-1006.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 214W Tc | 80A | 320A | 0.0067Ohm | 450 mJ | N-Channel | 4300pF @ 30V | 6.7m Ω @ 80A, 10V | 2V @ 150μA | 80A Tc | 126nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SN7002N L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sn7002ne6433-datasheets-1858.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 0.2A | 5Ohm | 4.2 pF | N-Channel | 45pF @ 25V | 5 Ω @ 500mA, 10V | 1.8V @ 26μA | 200mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSS138NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138ne6327-datasheets-5143.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | DUAL | GULL WING | 360mW | 1 | 230mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 360mW Ta | N-Channel | 41pF @ 25V | 3.5 Ω @ 230mA, 10V | 1.4V @ 250μA | 230mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB085N06L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb085n06lg-datasheets-2494.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 188W | 60V | 60V | 80A | 320A | 0.0082Ohm | 370 mJ | N-Channel | 3500pF @ 30V | 8.2m Ω @ 80A, 10V | 2V @ 125μA | 80A Tc | 104nC @ 10V |
