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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPB100N06S3L-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100n06s3l04xk-datasheets-5374.pdf | 55V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 214W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 58ns | 55 ns | 82 ns | 100A | 16V | SILICON | DRAIN | 214W Tc | 400A | 0.0059Ohm | 450 mJ | 55V | N-Channel | 17270pF @ 25V | 3.5m Ω @ 80A, 10V | 2.2V @ 150μA | 100A Tc | 362nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||
| IPB05N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb05n03lbg-datasheets-2531.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 30V | 94W Tc | N-Channel | 3209pF @ 15V | 5mOhm @ 60A, 10V | 2V @ 40μA | 80A Tc | 25nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD640N06LGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd640n06lgbtma1-datasheets-2543.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 47W Tc | TO-252AA | 18A | 72A | 0.064Ohm | 43 mJ | N-Channel | 470pF @ 30V | 64m Ω @ 18A, 10V | 2V @ 16μA | 18A Tc | 13nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSP170PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-bsp170pe6327-datasheets-5688.pdf | TO-261-4, TO-261AA | 4 | 4 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 4 | 1.8W | 1 | 14 ns | 60 ns | 92 ns | 1.9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.8W Ta | 7.6A | 0.3Ohm | 70 mJ | P-Channel | 410pF @ 25V | 300m Ω @ 1.9A, 10V | 4V @ 250μA | 1.9A Ta | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| BSS7728N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss7728n-datasheets-2376.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 0.2A | 5Ohm | 4.4 pF | N-Channel | 56pF @ 25V | 5 Ω @ 500mA, 10V | 2.3V @ 26μA | 200mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSS84PL6327HTSA1 | Infineon Technologies | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss84pe6327-datasheets-5060.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | unknown | 8541.21.00.95 | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | 170mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 360mW Ta | 0.17A | 12Ohm | P-Channel | 19pF @ 25V | 8 Ω @ 170mA, 10V | 2V @ 20μA | 170mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSS138W E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138we6327-datasheets-2396.pdf | SC-70, SOT-323 | YES | FET General Purpose Power | Single | 60V | 500mW Ta | 0.28A | N-Channel | 43pF @ 25V | 3.5 Ω @ 220mA, 10V | 1.4V @ 26μA | 280mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP296L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/infineontechnologies-bsp296e6327-datasheets-5056.pdf | TO-261-4, TO-261AA | 4 | 4 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 4 | 40 | 1.79W | 1 | 5.2 ns | 7.9ns | 21.4 ns | 37.4 ns | 1.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 1.79W Ta | 0.7Ohm | N-Channel | 364pF @ 25V | 700m Ω @ 1.1A, 10V | 1.8V @ 400μA | 1.1A Ta | 17.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPB03N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb03n03lag-datasheets-2432.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 25V | 150W Tc | N-Channel | 7027pF @ 15V | 2.7mOhm @ 55A, 10V | 2V @ 100μA | 80A Tc | 57nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB04N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb04n03la-datasheets-3609.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 107W Tc | 80A | 385A | 0.0064Ohm | 290 mJ | N-Channel | 3877pF @ 15V | 3.9m Ω @ 55A, 10V | 2V @ 60μA | 80A Tc | 32nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSS84PW | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss84pw-datasheets-2449.pdf | SC-70, SOT-323 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 300mW Ta | 0.15A | 8Ohm | 3.8 pF | P-Channel | 19.1pF @ 25V | 8 Ω @ 150mA, 10V | 2V @ 20μA | 150mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSS87L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss87h6327ftsa1-datasheets-2744.pdf | TO-243AA | 4 | No | PG-SOT89 | 97pF | 3.7 ns | 3.5ns | 27.3 ns | 17.6 ns | 260mA | 20V | 240V | 1W Ta | N-Channel | 97pF @ 25V | 6Ohm @ 260mA, 10V | 1.8V @ 108μA | 260mA Ta | 5.5nC @ 10V | 6 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB048N06LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp048n06lg-datasheets-1185.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 1 | Not Qualified | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 300W Tc | 400A | 0.0044Ohm | 810 mJ | N-Channel | 7600pF @ 30V | 4.4m Ω @ 100A, 10V | 2V @ 270μA | 100A Tc | 225nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPB110N06L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb110n06lg-datasheets-2475.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 158W | 60V | 60V | 78A | 312A | 0.011Ohm | 280 mJ | N-Channel | 2700pF @ 30V | 11m Ω @ 78A, 10V | 2V @ 94μA | 78A Tc | 79nC @ 10V | ||||||||||||||||||||||||||||||||||||
| SPI80N03S2L-06 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp80n03s2l06-datasheets-5469.pdf | 30V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150W Tc | 135A | 320A | 0.0095Ohm | 240 mJ | N-Channel | 2530pF @ 25V | 6.2m Ω @ 80A, 10V | 2V @ 80μA | 80A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSP171PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-bsp171ph6327xtsa1-datasheets-0653.pdf | TO-261-4, TO-261AA | 4 | 4 | yes | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 4 | 1.8W | 1 | 6 ns | 25ns | 87 ns | 208 ns | 1.9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.8W Ta | 0.3Ohm | 55 pF | P-Channel | 460pF @ 25V | 300m Ω @ 1.9A, 10V | 2V @ 460μA | 1.9A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| HAT2164H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-hat2164hele-datasheets-2351.pdf | 30V | 60A | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | Gold | No | e4 | SINGLE | GULL WING | 260 | 5 | 20 | 1 | FET General Purpose Power | R-PSSO-G4 | 18 ns | 60ns | 15 ns | 65 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30W Tc | 240A | 0.0044Ohm | N-Channel | 7600pF @ 10V | 3.1m Ω @ 30A, 10V | 60A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| BSS123L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss123e6327-datasheets-5104.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 3 | 40 | 360mW | 1 | 2.7 ns | 3.1ns | 25 ns | 9.9 ns | 170mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 360mW Ta | 6Ohm | N-Channel | 69pF @ 25V | 6 Ω @ 170mA, 10V | 1.8V @ 50μA | 170mA Ta | 2.67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SPI80N08S2-07R | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi80n08s207r-datasheets-2357.pdf | 75V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | 320A | 0.0073Ohm | 750 mJ | N-Channel | 5830pF @ 25V | 7.3m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSO300N03S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso300n03s-datasheets-2205.pdf | 30V | 7.2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 40 | 1.56W | 1 | FET General Purpose Power | Not Qualified | 2.2ns | 2.2 ns | 9.3 ns | 5.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.56W Ta | MS-012AA | 0.03Ohm | 34 pF | 30V | N-Channel | 600pF @ 15V | 30m Ω @ 7.2A, 10V | 2V @ 8μA | 5.7A Ta | 4.6nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SPI80N03S2L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n03s2l03g-datasheets-1447.pdf | 30V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | 320A | 0.0038Ohm | 810 mJ | N-Channel | 8180pF @ 25V | 3.1m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 220nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP50CN10NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp50cn10ngxksa1-datasheets-2295.pdf | TO-220-3 | 3 | yes | EAR99 | unknown | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 44W | 1 | Not Qualified | R-PSFM-T3 | 4ns | 3 ns | 20A | 20V | SILICON | SWITCHING | 44W Tc | TO-220AB | 80A | 0.05Ohm | 29 mJ | 100V | N-Channel | 1090pF @ 50V | 50m Ω @ 20A, 10V | 4V @ 20μA | 20A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSP372L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp372l6327htsa1-datasheets-2306.pdf | TO-261-4, TO-261AA | 4 | No | 1.8W | 1 | PG-SOT223-4 | 520pF | 20 ns | 35ns | 50 ns | 110 ns | 1.7A | 14V | 100V | 1.8W Ta | N-Channel | 520pF @ 25V | 310mOhm @ 1.7A, 5V | 2V @ 1mA | 1.7A Ta | 310 mΩ | 5V | ±14V | |||||||||||||||||||||||||||||||||||||||||||||
| BSP373L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp373l6327htsa1-datasheets-2310.pdf | 100V | 1.7A | TO-261-4, TO-261AA | 6.7mm | Lead Free | 4 | 4 | yes | EAR99 | AVALANCHE RATED | No | e3 | MATTE TIN | 100V | AEC-Q101 | DUAL | GULL WING | 260 | 4 | 40 | 1.8W | 1 | 10 ns | 30ns | 30 ns | 85 ns | 1.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.8W Ta | 6.8A | 0.3Ohm | 100V | N-Channel | 550pF @ 25V | 300m Ω @ 1.7A, 10V | 4V @ 1mA | 1.7A Ta | 10V | ±20V | |||||||||||||||||||||||||||
| BSP315PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp315pe6327-datasheets-5075.pdf | TO-261-4, TO-261AA | 4 | No | 1.8W | 1 | PG-SOT223-4 | 160pF | 24 ns | 9ns | 19 ns | 32 ns | 1.17A | 20V | 60V | 1.8W Ta | P-Channel | 160pF @ 25V | 800mOhm @ 1.17A, 10V | 2V @ 160μA | 1.17A Ta | 7.8nC @ 10V | 800 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSP297L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-bsp297l6327htsa1-datasheets-2317.pdf | TO-261-4, TO-261AA | 4 | No | PG-SOT223-4 | 357pF | 5.2 ns | 3.8ns | 19 ns | 49 ns | 660mA | 20V | 200V | 1.8W Ta | N-Channel | 357pF @ 25V | 1.8Ohm @ 660mA, 10V | 1.8V @ 400μA | 660mA Ta | 16.1nC @ 10V | 1.8 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPI80N06S2L-11 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2l11-datasheets-1507.pdf | 55V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 158W Tc | 320A | 0.0147Ohm | 280 mJ | N-Channel | 2650pF @ 25V | 11m Ω @ 40A, 10V | 2V @ 93μA | 80A Tc | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSP316PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp316pe6327-datasheets-5601.pdf | TO-261-4, TO-261AA | 4 | 4 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 40 | 1 | 4.7 ns | 7.5ns | 25.9 ns | 67.4 ns | 680mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 1.8W Ta | 0.68A | 2.72A | P-Channel | 146pF @ 25V | 1.8 Ω @ 680mA, 10V | 2V @ 170μA | 680mA Ta | 6.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SN7002N E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sn7002ne6433-datasheets-1858.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 0.2A | 5Ohm | 4.2 pF | N-Channel | 45pF @ 25V | 5 Ω @ 500mA, 10V | 1.8V @ 26μA | 200mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPP80N03S2-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n03s203gatma1-datasheets-1455.pdf | 30V | 80A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | N-Channel | 7020pF @ 25V | 3.4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 150nC @ 10V | 10V | ±20V |
