Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF1010NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1010nstrlpbf-datasheets-9211.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 55V | 180W Tc | N-Channel | 3210pF @ 25V | 11m Ω @ 43A, 10V | 4V @ 250μA | 85A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3715zlpbf-datasheets-9816.pdf | 20V | 50A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | No SVHC | 11MOhm | 3 | No | 45W | TO-220AB | 870pF | 7.1 ns | 44ns | 4.6 ns | 11 ns | 50A | 20V | 20V | 2.1V | 45W Tc | 14 ns | 15.5mOhm | 20V | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFSL23N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb23n15dpbf-datasheets-2965.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | compliant | NOT SPECIFIED | NOT SPECIFIED | 150V | 3.8W Ta 136W Tc | N-Channel | 1200pF @ 25V | 90m Ω @ 14A, 10V | 5.5V @ 250μA | 23A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3103LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3103strlpbf-datasheets-9763.pdf | 30V | 64A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | No SVHC | 12MOhm | 3 | EAR99 | No | Single | 110W | 8.9 ns | 120ns | 9.1 ns | 14 ns | 64A | 16V | 94W Tc | 30V | N-Channel | 1650pF @ 25V | 1 V | 12m Ω @ 34A, 10V | 1V @ 250μA | 64A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFBC20LPBF | Vishay Siliconix | $7.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc20strlpbf-datasheets-2593.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 2.387001g | 4.4Ohm | No | 1 | Single | TO-262-3 | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2.2A | 20V | 600V | 3.1W Ta 50W Tc | 4.4Ohm | N-Channel | 350pF @ 25V | 4.4Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF4104LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf4104spbf-datasheets-9182.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 140W Tc | N-Channel | 3000pF @ 25V | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL8113LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl8113pbf-datasheets-8524.pdf | 30V | 105A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | NOT SPECIFIED | NOT SPECIFIED | 110W | 1 | 38ns | 105A | 20V | 110W Tc | 30V | N-Channel | 2840pF @ 15V | 6m Ω @ 21A, 10V | 2.25V @ 250μA | 105A Tc | 35nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irl3715zlpbf-datasheets-9816.pdf | 20V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Lead Free | No SVHC | 3 | No | Single | 45W | D2PAK | 870pF | 7.1 ns | 44ns | 4.6 ns | 11 ns | 50A | 20V | 20V | 2.1V | 45W Tc | 14 ns | 11mOhm | 20V | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF3707ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3707zspbf-datasheets-8539.pdf | 30V | 59A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | 57W | 1 | TO-262 | 1.21nF | 9.8 ns | 41ns | 3.6 ns | 12 ns | 59A | 20V | 30V | 57W Tc | 12.5mOhm | 30V | N-Channel | 1210pF @ 15V | 9.5mOhm @ 21A, 10V | 2.25V @ 25μA | 59A Tc | 15nC @ 4.5V | 9.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF3711ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3711zpbf-datasheets-8407.pdf | 20V | 92A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | Single | 79W | TO-262 | 2.15nF | 16ns | 5.4 ns | 15 ns | 92A | 20V | 20V | 79W Tc | 7.3mOhm | 20V | N-Channel | 2150pF @ 10V | 6mOhm @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF734PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf734-datasheets-9477.pdf | 450V | 4.9A | TO-220-3 | Lead Free | 3 | Single | TO-220AB | 680pF | 22ns | 21 ns | 40 ns | 4.9A | 20V | 450V | 74W Tc | 1.2Ohm | 450V | N-Channel | 680pF @ 25V | 1.2Ohm @ 2.9A, 10V | 4V @ 250μA | 4.9A Tc | 45nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3704LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3704pbf-datasheets-8551.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 20V | 87W Tc | N-Channel | 1996pF @ 10V | 9m Ω @ 15A, 10V | 3V @ 250μA | 77A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ46ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfz46zstrlpbf-datasheets-9839.pdf | 55V | 51A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | 82W | 13 ns | 63ns | 39 ns | 37 ns | 51A | 20V | 82W Tc | 55V | N-Channel | 1460pF @ 25V | 13.6m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 46nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU014NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr014npbf-datasheets-9403.pdf | 55V | 10A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | No SVHC | 140mOhm | 3 | Single | 28W | 1 | I-PAK | 265pF | 6.5 ns | 47ns | 23 ns | 12 ns | 10A | 16V | 55V | 55V | 1V | 28W Tc | 210mOhm | 55V | N-Channel | 265pF @ 25V | 1 V | 140mOhm @ 6A, 10V | 1V @ 250μA | 10A Tc | 7.9nC @ 5V | 140 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IRFP460NPBF | Vishay Siliconix | $0.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp460npbf-datasheets-9794.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | Unknown | 3 | 1 | Single | TO-247-3 | 3.54nF | 23 ns | 87ns | 33 ns | 34 ns | 20A | 30V | 500V | 5V | 280W Tc | 240mOhm | 500V | N-Channel | 3540pF @ 25V | 240mOhm @ 12A, 10V | 5V @ 250μA | 20A Tc | 124nC @ 10V | 240 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRLR8113TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irlr8113pbf-datasheets-7610.pdf | 30V | 94A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | No SVHC | 6MOhm | 3 | No | Single | 89W | 1 | D-Pak | 2.92nF | 9.2 ns | 3.8ns | 10 ns | 15 ns | 94A | 20V | 30V | 89W Tc | 7.4mOhm | 30V | N-Channel | 2920pF @ 15V | 2.25 V | 6mOhm @ 15A, 10V | 2.25V @ 250μA | 94A Tc | 32nC @ 4.5V | 6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF3711ZCLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-262-3 Long Leads, I2Pak, TO-262AA | 20V | 79W Tc | N-Channel | 2150pF @ 10V | 6m Ω @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3715zlpbf-datasheets-9816.pdf | 20V | 50A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | Single | 45W | TO-262 | 870pF | 7.1 ns | 44ns | 4.6 ns | 11 ns | 50A | 20V | 20V | 45W Tc | 11mOhm | 20V | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 11 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRL3714ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3714zspbf-datasheets-8490.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 20V | 35W Tc | N-Channel | 550pF @ 10V | 16m Ω @ 15A, 10V | 2.55V @ 250μA | 36A Tc | 7.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715ZCSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL1006PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfl1006pbf-datasheets-9832.pdf | 60V | 1.6A | TO-261-4, TO-261AA | Lead Free | No SVHC | 220Ohm | 3 | 2.1W | 1 | SOT-223 | 160pF | 18ns | 1.6A | 20V | 60V | 60V | 4V | 1W Ta | 60V | N-Channel | 160pF @ 25V | 4 V | 220mOhm @ 1.6A, 10V | 4V @ 250μA | 1.6A Ta | 8nC @ 10V | 220 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRC644PBF | Vishay Siliconix | $2.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc644pbf-datasheets-9835.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 5 | 3.000003g | EAR99 | unknown | SINGLE | 260 | 5 | 1 | 40 | 1 | Not Qualified | R-PSFM-T5 | 12 ns | 37ns | 29 ns | 49 ns | 14A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 250V | 250V | 125W Tc | 56A | 0.28Ohm | 550 mJ | N-Channel | 1200pF @ 25V | 280m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 65nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFL024NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfl024ntrpbf-datasheets-6595.pdf | TO-261-4, TO-261AA | 4 | 20 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1W Ta | 2.8A | 0.075Ohm | N-Channel | 400pF @ 25V | 75m Ω @ 2.8A, 10V | 4V @ 250μA | 2.8A Ta | 18.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFL4105PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfl4105trpbf-datasheets-9952.pdf | TO-261-4, TO-261AA | 4 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1W Ta | 3.7A | 0.045Ohm | N-Channel | 660pF @ 25V | 45m Ω @ 3.7A, 10V | 4V @ 250μA | 3.7A Ta | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLL2703PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irll2703trpbf-datasheets-9455.pdf | 30V | 3.9A | TO-261-4, TO-261AA | 6.7mm | 1.7mm | 3.7mm | Lead Free | No SVHC | 60mOhm | 3 | No | Single | 2.1W | 1 | SOT-223 | 530pF | 7.4 ns | 24ns | 14 ns | 6.9 ns | 3.9A | 16V | 30V | 30V | 2.4V | 1W Ta | 63 ns | 70mOhm | 30V | N-Channel | 530pF @ 25V | 2.4 V | 45mOhm @ 3.9A, 10V | 2.4V @ 250μA | 3.9A Ta | 14nC @ 5V | 45 mΩ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| IRLR2905ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr2905ztrlpbf-datasheets-0888.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | 55V | 110W Tc | N-Channel | 1570pF @ 25V | 13.5m Ω @ 36A, 10V | 3V @ 250μA | 42A Tc | 35nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL024ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfl024ztrpbf-datasheets-8758.pdf | TO-261-4, TO-261AA | 4 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1W Ta | 5.1A | 0.0575Ohm | N-Channel | 340pF @ 25V | 57.5m Ω @ 3.1A, 10V | 4V @ 250μA | 5.1A Ta | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFU020PBF | Vishay Siliconix | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr020trpbf-datasheets-8493.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | 3 | 329.988449mg | 3 | yes | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 13 ns | 58ns | 42 ns | 25 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 42W Tc | 56A | N-Channel | 640pF @ 25V | 100m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF1010EZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | /files/infineontechnologies-irf1010ezpbf-datasheets-1778.pdf | 60V | 75A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | 140W | 19 ns | 90ns | 54 ns | 38 ns | 75A | 20V | 140W Tc | 60V | N-Channel | 2810pF @ 25V | 8.5m Ω @ 51A, 10V | 4V @ 100μA | 75A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7807APBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irf7807trpbf-datasheets-8459.pdf | 30V | 6.6A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | No SVHC | 25MOhm | 8 | No | DUAL | GULL WING | Single | 2.5W | 1 | 12 ns | 17ns | 6 ns | 25 ns | 8.3A | 12V | 30V | SILICON | SWITCHING | 6.3 mm | 1V | 2.5W Ta | 66A | 30V | N-Channel | 1 V | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 17nC @ 5V | 4.5V | ±12V |
