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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Lead Length | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFP064VPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfp064vpbf-datasheets-9654.pdf | 60V | 130A | TO-247-3 | Lead Free | No SVHC | 3 | No | Single | 250W | 1 | TO-247AC | 6.76nF | 26 ns | 200ns | 150 ns | 100 ns | 130A | 20V | 60V | 250W Tc | 5.5mOhm | 60V | N-Channel | 6760pF @ 25V | 4 V | 5.5mOhm @ 78A, 10V | 4V @ 250μA | 130A Tc | 260nC @ 10V | 5.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7321D2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irf7321d2trpbf-datasheets-9658.pdf | -30V | -4.7A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 62mOhm | 8 | EAR99 | No | Single | 2W | 1 | Other Transistors | 13 ns | 13ns | 32 ns | 34 ns | 4.7A | 20V | 30V | 2W Ta | -30V | P-Channel | 710pF @ 25V | 62m Ω @ 4.9A, 10V | 1V @ 250μA | 4.7A Ta | 34nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF3000PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 300V | 1.6A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 2.5W | 8-SO | 730pF | 7.2ns | 1.6A | 300V | 2.5W Ta | 300V | N-Channel | 730pF @ 25V | 400mOhm @ 960mA, 10V | 5V @ 250μA | 1.6A Ta | 33nC @ 10V | 400 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR12N25DPBF | Infineon Technologies | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr12n25dpbf-datasheets-9691.pdf | 250V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | No SVHC | 260Ohm | 3 | 144W | 1 | D-Pak | 810pF | 25ns | 14A | 30V | 250V | 250V | 5V | 144W Tc | 250V | N-Channel | 810pF @ 25V | 5 V | 260mOhm @ 8.4A, 10V | 5V @ 250μA | 14A Tc | 35nC @ 10V | 260 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3303PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3303trlpbf-datasheets-7381.pdf | 30V | 35A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 57W | 1 | I-PAK | 870pF | 200ns | 35A | 16V | 30V | 68W Tc | 45mOhm | 30V | N-Channel | 870pF @ 25V | 31mOhm @ 21A, 10V | 1V @ 250μA | 35A Tc | 26nC @ 4.5V | 31 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7467PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf7467pbf-datasheets-9701.pdf | 30V | 11A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | No SVHC | 8 | 2.5W | 1 | 8-SO | 2.53nF | 7.8 ns | 2.5ns | 4 ns | 19 ns | 11A | 12V | 30V | 2V | 2.5W Ta | 13.5mOhm | 30V | N-Channel | 2530pF @ 15V | 12mOhm @ 11A, 10V | 2V @ 250μA | 11A Ta | 32nC @ 4.5V | 12 mΩ | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF3707ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3707zspbf-datasheets-8539.pdf | 30V | 59A | TO-220-3 | 10.5156mm | 8.763mm | 4.69mm | Lead Free | No SVHC | 9.5Ohm | 3 | No | 57W | 1 | TO-220AB | 1.21nF | 9.8 ns | 41ns | 3.6 ns | 12 ns | 59A | 20V | 30V | 30V | 1.8V | 57W Tc | 21 ns | 12.5mOhm | 30V | N-Channel | 1210pF @ 15V | 1.8 V | 9.5mOhm @ 21A, 10V | 2.25V @ 25μA | 59A Tc | 15nC @ 4.5V | 9.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLR3705ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr3705ztrpbf-datasheets-7722.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | EAR99 | 55V | 130W Tc | N-Channel | 2900pF @ 25V | 8m Ω @ 42A, 10V | 3V @ 250μA | 42A Tc | 66nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr9n20dtrpbf-datasheets-5135.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 86W Tc | TO-252AA | 9.4A | 38A | 0.38Ohm | 100 mJ | N-Channel | 560pF @ 25V | 380m Ω @ 5.6A, 10V | 5.5V @ 250μA | 9.4A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF3717TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf3717trpbf-datasheets-9611.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | yes | GREEN | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | MS-012AA | 20A | 160A | 0.0044Ohm | 32 mJ | N-Channel | 2890pF @ 10V | 4.4m Ω @ 20A, 10V | 2.45V @ 250μA | 20A Ta | 33nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3708PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3708trpbf-datasheets-4248.pdf | 30V | 61A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | No SVHC | 12.5Ohm | 3 | No | 87W | 7.2 ns | 50ns | 3.7 ns | 17.6 ns | 61A | 12V | 30V | 2V | 87W Tc | 30V | N-Channel | 2417pF @ 15V | 2 V | 12.5m Ω @ 15A, 10V | 2V @ 250μA | 61A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1010ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr1010ztrlpbf-datasheets-9929.pdf | 55V | 42A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 14 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 76ns | 48 ns | 42 ns | 42A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | TO-252AA | 0.0075Ohm | 220 mJ | 55V | N-Channel | 2840pF @ 25V | 4 V | 7.5m Ω @ 42A, 10V | 4V @ 100μA | 42A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRLU3103PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irlr3103trpbf-datasheets-6103.pdf | 30V | 55A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | No SVHC | 19mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | Tin | No | e3 | SINGLE | 260 | 30 | 69W | 1 | FET General Purpose Power | 9 ns | 210ns | 54 ns | 20 ns | 55A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1V | 107W Tc | 120 ns | 20A | 220A | 240 mJ | 30V | N-Channel | 1600pF @ 25V | 1 V | 19m Ω @ 33A, 10V | 1V @ 250μA | 55A Tc | 50nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
| IRFP354PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp354pbf-datasheets-9648.pdf | TO-247-3 | 3 | yes | unknown | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 14A | SILICON | SINGLE | DRAIN | SWITCHING | 450V | 450V | 190W Tc | TO-247AC | 0.35Ohm | N-Channel | 2700pF @ 25V | 350m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3706PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3706pbf-datasheets-7064.pdf | 20V | 75A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | Single | 88W | IPAK (TO-251) | 2.41nF | 87ns | 4.8 ns | 17 ns | 75A | 12V | 20V | 88W Tc | 11mOhm | 20V | N-Channel | 2410pF @ 10V | 9mOhm @ 15A, 10V | 2V @ 250μA | 75A Tc | 35nC @ 4.5V | 9 mΩ | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30LPBF | Vishay Siliconix | $5.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc30strlpbf-datasheets-6482.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 2.387001g | Unknown | 3 | No | 1 | Single | TO-262-3 | 660pF | 11 ns | 13ns | 14 ns | 35 ns | 3.6A | 20V | 600V | 4V | 3.1W Ta 74W Tc | 2.2Ohm | N-Channel | 660pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 31nC @ 10V | 2.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3710ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3710ztrlpbf-datasheets-9532.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 52 Weeks | EAR99 | not_compliant | 100V | 140W Tc | N-Channel | 2930pF @ 25V | 18m Ω @ 33A, 10V | 4V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR6215PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr6215trpbf-datasheets-6749.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 110W Tc | TO-252AA | 13A | 44A | 0.295Ohm | 310 mJ | P-Channel | 860pF @ 25V | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR18N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr18n15dtrlp-datasheets-9093.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 110W Tc | TO-252AA | 18A | 72A | 0.125Ohm | 200 mJ | N-Channel | 900pF @ 25V | 125m Ω @ 11A, 10V | 5.5V @ 250μA | 18A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFU1205PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfu1205pbf-datasheets-9513.pdf | 55V | 44A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 14 Weeks | 27mOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 69W | 1 | FET General Purpose Power | 7.3 ns | 69ns | 60 ns | 47 ns | 44A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 107W Tc | 20A | 160A | 210 mJ | 55V | N-Channel | 1300pF @ 25V | 27m Ω @ 26A, 10V | 4V @ 250μA | 44A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLR7821TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irlr7821pbf-datasheets-7774.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 18 Weeks | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | THROUGH-HOLE | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 75W Tc | TO-251AA | 65A | 260A | 0.01Ohm | 230 mJ | N-Channel | 1030pF @ 15V | 10m Ω @ 15A, 10V | 1V @ 250μA | 65A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRLU2905ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irlr2905ztrlpbf-datasheets-0888.pdf | 55V | 42A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 15 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | 14 ns | 130ns | 33 ns | 24 ns | 60A | 16V | 55V | SILICON | DRAIN | SWITCHING | 1V | 110W Tc | 22 ns | 240A | 85 mJ | 55V | N-Channel | 1570pF @ 25V | 13.5m Ω @ 36A, 10V | 3V @ 250μA | 42A Tc | 35nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
| IRF7353D1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf7353d1pbf-datasheets-6607.pdf | 30V | 6.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | No | 2W | 1 | 8-SO | 650pF | 8.1 ns | 8.9ns | 17 ns | 26 ns | 6.5A | 20V | 30V | 2W Ta | 46mOhm | 30V | N-Channel | 650pF @ 25V | 32mOhm @ 5.8A, 10V | 1V @ 250μA | 6.5A Ta | 33nC @ 10V | Schottky Diode (Isolated) | 32 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFU4105PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr4105trpbf-datasheets-1009.pdf | 55V | 27A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | No SVHC | 45Ohm | 3 | No | 48W | 7 ns | 49ns | 40 ns | 31 ns | 27A | 20V | 55V | 4V | 68W Tc | 55V | N-Channel | 700pF @ 25V | 4 V | 45m Ω @ 16A, 10V | 4V @ 250μA | 27A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3708PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr3708trpbf-datasheets-4248.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 87W Tc | TO-252AA | 30A | 244A | 0.0125Ohm | 213 mJ | N-Channel | 2417pF @ 15V | 12.5m Ω @ 15A, 10V | 2V @ 250μA | 61A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFU1010ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/infineontechnologies-irfr1010ztrlpbf-datasheets-9929.pdf | 55V | 42A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | No SVHC | 7.5MOhm | 3 | 2.28mm | No | 9.65mm | 140W | IPAK (TO-251) | 2.84nF | 17 ns | 76ns | 48 ns | 42 ns | 42A | 20V | 55V | 55V | 4V | 140W Tc | 7.5mOhm | 55V | N-Channel | 2840pF @ 25V | 4 V | 7.5mOhm @ 42A, 10V | 4V @ 100μA | 42A Tc | 95nC @ 10V | 7.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFR2307ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr2307ztrlpbf-datasheets-0691.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 110W Tc | TO-252AA | 42A | 210A | 0.016Ohm | 100 mJ | N-Channel | 2190pF @ 25V | 16m Ω @ 32A, 10V | 4V @ 100μA | 42A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| ZVN4210GTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn4210gta-datasheets-6678.pdf | 100V | 800mA | TO-261-4, TO-261AA | Lead Free | 7.994566mg | 4 | 1 | 2W | 4 ns | 8ns | 30 ns | 20 ns | 800mA | 20V | 2W Ta | 100V | N-Channel | 100pF @ 25V | 1.5 Ω @ 1.5A, 10V | 2.4V @ 1mA | 800mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlz44nstrlpbf-datasheets-4204.pdf | 55V | 47A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | No SVHC | 3 | EAR99 | 110W | 1 | 84ns | 47A | 16V | 3.8W Ta 110W Tc | 55V | N-Channel | 1700pF @ 25V | 2 V | 22m Ω @ 25A, 10V | 2V @ 250μA | 47A Tc | 48nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3707PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3707pbf-datasheets-7053.pdf | 30V | 61A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | No SVHC | 13Ohm | 4 | Single | 87W | 1 | IPAK (TO-251) | 1.99nF | 78 ns | 78ns | 3.3 ns | 11.8 ns | 61A | 20V | 30V | 30V | 3V | 87W Tc | 17.5mOhm | 30V | N-Channel | 1990pF @ 15V | 3 V | 13mOhm @ 15A, 10V | 3V @ 250μA | 61A Tc | 19nC @ 4.5V | 13 mΩ | 4.5V 10V | ±20V |
