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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPU09N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu09n03lag-datasheets-5465.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 63W Tc | 50A | 350A | 0.015Ohm | 75 mJ | N-Channel | 1642pF @ 15V | 8.8m Ω @ 30A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPP80N03S2L-06 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp80n03s2l06-datasheets-5469.pdf | 30V | 80A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e0 | TIN LEAD | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 23ns | 61 ns | 73 ns | 80A | 20V | SILICON | SWITCHING | 150W Tc | TO-220AB | 320A | 0.0095Ohm | 240 mJ | 30V | N-Channel | 2530pF @ 25V | 6.2m Ω @ 80A, 10V | 2V @ 80μA | 80A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SPI07N60C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa07n60c3xksa1-datasheets-3567.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 83W Tc | 7.3A | 21.9A | 0.6Ohm | 230 mJ | N-Channel | 790pF @ 25V | 600m Ω @ 4.6A, 10V | 3.9V @ 350μA | 7.3A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPP15P10P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp15p10p-datasheets-5478.pdf | -100V | -15A | TO-220-3 | Contains Lead | EAR99 | 3 | 30ns | 15A | 100V | 128W Tc | P-Channel | 1180pF @ 25V | 240m Ω @ 10.6A, 10V | 2.1V @ 1.54mA | 15A Tc | 50nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPU08P06P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineon-spu08p06p-datasheets-5316.pdf | -60V | -8.8A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e3 | MATTE TIN | SINGLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 46ns | 8.83A | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 42W Tc | 35.32A | 0.3Ohm | 70 mJ | P-Channel | 420pF @ 25V | 300m Ω @ 6.2A, 10V | 4V @ 250μA | 8.83A Ta | 13nC @ 10V | ||||||||||||||||||||||||||||||||||||||
| BSO201SPNTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso201spntma1-datasheets-5485.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 14.9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | 59.6A | P-Channel | 5962pF @ 15V | 8m Ω @ 14.9A, 4.5V | 1.2V @ 250μA | 14.9A Ta | 128nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| BSL307SP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsl307sp-datasheets-5489.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2W Ta | 5.5A | 22A | 0.043Ohm | 44 mJ | P-Channel | 805pF @ 25V | 43m Ω @ 5.5A, 10V | 2V @ 40μA | 5.5A Ta | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP09N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp09n03la-datasheets-5497.pdf | 25V | 50A | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 88.5ns | 4.2 ns | 22 ns | 50A | 20V | SILICON | SWITCHING | 63W Tc | TO-220AB | 65A | 0.0155Ohm | 75 mJ | 25V | N-Channel | 1642pF @ 15V | 9.2m Ω @ 30A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SPP100N03S2-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-spp100n03s203-datasheets-5425.pdf | 30V | 100A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | e0 | Tin/Lead (Sn/Pb) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 40ns | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 400A | 0.0033Ohm | 810 mJ | N-Channel | 7020pF @ 25V | 3.3m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SPW12N50C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spw12n50c3fksa1-datasheets-5429.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Tin (Sn) | SINGLE | 3 | 125W | 1 | R-PSFM-T3 | 10 ns | 8ns | 8 ns | 45 ns | 11.6A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | 560V | 125W Tc | TO-247AD | 34.8A | 0.38Ohm | 340 mJ | N-Channel | 1200pF @ 25V | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 11.6A Tc | 49nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP04N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi04n03la-datasheets-5382.pdf | 25V | 80A | TO-220-3 | Contains Lead | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 107W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 4.5ns | 5.4 ns | 38 ns | 80A | 20V | SILICON | SWITCHING | 107W Tc | TO-220AB | 385A | 0.0067Ohm | 290 mJ | 25V | N-Channel | 3877pF @ 15V | 4.2m Ω @ 55A, 10V | 2V @ 60μA | 80A Tc | 32nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPP03N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp03n03la-datasheets-5442.pdf | 25V | 80A | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 8.5ns | 7.5 ns | 45 ns | 80A | 20V | SILICON | SWITCHING | 150W Tc | TO-220AB | 385A | 0.0044Ohm | 960 mJ | 25V | N-Channel | 7027pF @ 15V | 3m Ω @ 55A, 10V | 2V @ 100μA | 80A Tc | 57nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SPP04N50C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp04n50c3hksa1-datasheets-5447.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 560V | 500V | 50W Tc | TO-220AB | 4.5A | 13.5A | 0.95Ohm | 130 mJ | N-Channel | 470pF @ 25V | 950m Ω @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SPP80P06PBKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp80p06pbksa1-datasheets-5371.pdf | TO-220-3 | PG-TO220-3 | 60V | 340W Tc | P-Channel | 5033pF @ 25V | 23mOhm @ 64A, 10V | 4V @ 5.5mA | 80A Tc | 173nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXM64P035GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxm64p035gta-datasheets-5329.pdf | -35V | -3.8A | TO-261-4, TO-261AA | Contains Lead | 4 | 7.994566mg | EAR99 | LOW THRESHOLD | DUAL | GULL WING | 4 | 1 | 2W | 1 | Not Qualified | R-PDSO-G4 | 4.4 ns | 6.2ns | 29.2 ns | 40 ns | 5.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 35V | 2W Ta | 0.075Ohm | P-Channel | 825pF @ 25V | 75m Ω @ 2.4A, 10V | 1V @ 250μA | 3.8A Ta 5.3A Tc | 46nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRLR7833TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7833-datasheets-4198.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 140W Tc | N-Channel | 4010pF @ 15V | 4.5mOhm @ 15A, 10V | 2.3V @ 250μA | 140A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI04N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi04n03la-datasheets-5382.pdf | 25V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 107W Tc | 385A | 0.0067Ohm | 290 mJ | N-Channel | 3877pF @ 15V | 4.2m Ω @ 55A, 10V | 2V @ 60μA | 80A Tc | 32nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPA11N60C3IN | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp11n60c3xksa1-datasheets-0639.pdf | TO-220-3 Full Pack | 650V | 33W Tc | N-Channel | 1200pF @ 25V | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 11A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP35N10 | Infineon Technologies | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp35n10-datasheets-5391.pdf | 100V | 35A | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 63ns | 23 ns | 39 ns | 35A | 20V | SILICON | 150W Tc | TO-220AB | 0.044Ohm | 245 mJ | 100V | N-Channel | 1570pF @ 25V | 44m Ω @ 26.4A, 10V | 4V @ 83μA | 35A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SPI100N03S2L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi100n03s2l03-datasheets-5395.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 300W Tc | 100A | 400A | 0.0037Ohm | 810 mJ | N-Channel | 8180pF @ 25V | 3m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPA04N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spa04n60c3xksa1-datasheets-5399.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | yes | AVALANCHE RATED | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 600V | 31W Tc | TO-220AB | 4.5A | 13.5A | 0.95Ohm | 130 mJ | N-Channel | 490pF @ 25V | 950m Ω @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPP20N60C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp20n60c3hksa1-datasheets-5406.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 208W Tc | TO-220AB | 20.7A | 62.1A | 0.19Ohm | 690 mJ | N-Channel | 2400pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 20.7A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SPU09P06PL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu09p06pl-datasheets-5410.pdf | -60V | -9.7A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 42W | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 168ns | 89 ns | 49 ns | 9.7A | 20V | SILICON | SWITCHING | 60V | 42W Tc | 38.8A | 0.25Ohm | 70 mJ | -60V | P-Channel | 450pF @ 25V | 250m Ω @ 6.8A, 10V | 2V @ 250μA | 9.7A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPP05N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp05n03la-datasheets-5420.pdf | 25V | 80A | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 94W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 4.6 ns | 32 ns | 80A | 20V | SILICON | SWITCHING | 94W Tc | TO-220AB | 385A | 0.0081Ohm | 190 mJ | 25V | N-Channel | 3110pF @ 15V | 4.9m Ω @ 55A, 10V | 2V @ 50μA | 80A Tc | 25nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| AOT270AL | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot270al-datasheets-5281.pdf | TO-220-3 | 18 Weeks | 500W | 1 | TO-220 | 10.83nF | 140A | 20V | 75V | 2.1W Ta 500W Tc | N-Channel | 10830pF @ 37.5V | 2.6mOhm @ 20A, 10V | 3.3V @ 250μA | 21.5A Ta 140A Tc | 206nC @ 10V | 2.6 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD4P25TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqd4p25tf-datasheets-5361.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 250V | 2.5W Ta 45W Tc | P-Channel | 420pF @ 25V | 2.1Ohm @ 1.55A, 10V | 5V @ 250μA | 3.1A Tc | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXM64P035L3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxm64p035l3-datasheets-5362.pdf | -35V | -12A | TO-220-3 | 16.51mm | 4.82mm | 10.66mm | Lead Free | 3 | 6.000006g | no | EAR99 | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 20W | 1 | R-PSFM-T3 | 4.4 ns | 6.2ns | 29.2 ns | 40 ns | 12A | 20V | SILICON | SWITCHING | 35V | 1.5W Ta 20W Tc | TO-220AB | 30.2 ns | P-Channel | 825pF @ 25V | 75m Ω @ 2.4A, 10V | 1V @ 250μA | 3.3A Ta 12A Tc | 46nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF7492TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7492tr-datasheets-5364.pdf | 8-SOIC (0.154, 3.90mm Width) | 200V | 2.5W Ta | N-Channel | 1820pF @ 25V | 79m Ω @ 2.2A, 10V | 2.5V @ 250μA | 3.7A Ta | 59nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ73 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz73-datasheets-5368.pdf | 200V | 7A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 40ns | 30 ns | 55 ns | 7A | 20V | SILICON | 40W Tc | TO-220AB | 7A | 28A | 0.4Ohm | 120 mJ | 200V | N-Channel | 530pF @ 25V | 3 V | 400m Ω @ 4.5A, 10V | 4V @ 1mA | 7A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF6603 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6603-datasheets-5153.pdf | DirectFET™ Isometric MT | 30V | 3.6W Ta 42W Tc | N-Channel | 6590pF @ 15V | 3.4m Ω @ 25A, 10V | 2.5V @ 250μA | 27A Ta 92A Tc | 72nC @ 4.5V | 4.5V 10V | +20V, -12V |
