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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SPD06N80C3BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-spd06n80c3btma1-datasheets-5841.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | yes | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Tin (Sn) | SINGLE | GULL WING | 260 | 3 | 40 | 83W | 1 | R-PSSO-G2 | 25 ns | 15ns | 8 ns | 72 ns | 6A | 20V | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | TO-252AA | 6A | 0.9Ohm | 230 mJ | N-Channel | 785pF @ 100V | 900m Ω @ 3.8A, 10V | 3.9V @ 250μA | 6A Ta | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IPB05N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb05n03la-datasheets-5628.pdf | 25V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 255 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 94W Tc | 385A | 0.0078Ohm | 190 mJ | N-Channel | 3110pF @ 15V | 4.6m Ω @ 55A, 10V | 2V @ 50μA | 80A Tc | 25nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPD02N50C3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/infineontechnologies-spd02n50c3-datasheets-5889.pdf | 560V | 1.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | No SVHC | 3 | yes | AVALANCHE RATED | e3 | Tin (Sn) | Not Halogen Free | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 10 ns | 5ns | 15 ns | 70 ns | 1.8A | 20V | 500V | SILICON | DRAIN | 3V | 25W Tc | TO-252AA | 5.4A | 3Ohm | 50 mJ | 500V | N-Channel | 190pF @ 25V | 3 Ω @ 1.1A, 10V | 3.9V @ 80μA | 1.8A Tc | 9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| SPB73N03S2L-08 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp73n03s2l08xk-datasheets-5648.pdf | 30V | 73A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 20ns | 73A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 107W Tc | 320A | 0.0131Ohm | 170 mJ | N-Channel | 1710pF @ 25V | 8.1m Ω @ 36A, 10V | 2V @ 55μA | 73A Tc | 46.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSS83PE6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss83pe6327-datasheets-5712.pdf | -60V | -330mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | unknown | 360mW | 1 | Other Transistors | 330mA | 20V | Single | 60V | 360mW Ta | P-Channel | 78pF @ 25V | 2 Ω @ 330mA, 10V | 2V @ 80μA | 330mA Ta | 3.57nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD07N60C3BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu07n60c3bkma1-datasheets-9660.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 52 Weeks | yes | EAR99 | AVALANCHE RATED | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 83W | 1 | Not Qualified | R-PSSO-G2 | 6 ns | 3.5ns | 7 ns | 60 ns | 7.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 83W Tc | TO-252AA | 0.6Ohm | 230 mJ | N-Channel | 790pF @ 25V | 600m Ω @ 4.6A, 10V | 3.9V @ 350μA | 7.3A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPD30N03S2L-20 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd30n03s2l20-datasheets-5932.pdf | 30V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 11ns | 17 ns | 20 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 60W Tc | TO-252AA | 120A | 0.031Ohm | 70 mJ | 30V | N-Channel | 700pF @ 25V | 20m Ω @ 18A, 10V | 2V @ 23μA | 30A Tc | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPB35N10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb35n10-datasheets-5936.pdf | 100V | 35A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | SINGLE | GULL WING | 150W | 1 | R-PSSO-G2 | 63ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 150W Tc | 0.044Ohm | 245 mJ | N-Channel | 1570pF @ 25V | 44m Ω @ 26.4A, 10V | 4V @ 83μA | 35A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSV236SP L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsv236spl6327-datasheets-5668.pdf | 6-VSSOP, SC-88, SOT-363 | 6 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | compliant | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 6 | 40 | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 560mW Ta | 1.5A | 0.175Ohm | P-Channel | 228pF @ 15V | 175m Ω @ 1.5A, 4.5V | 1.2V @ 8μA | 1.5A Ta | 5.7nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| SPD09P06PL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu09p06pl-datasheets-5410.pdf | -60V | -9.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | NOT SPECIFIED | 42W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 168ns | 89 ns | 49 ns | 9.7A | 20V | SILICON | DRAIN | SWITCHING | 60V | 42W Tc | 38.8A | 0.25Ohm | 70 mJ | -60V | P-Channel | 450pF @ 25V | 250m Ω @ 6.8A, 10V | 2V @ 250μA | 9.7A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPD05N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf05n03lag-datasheets-5680.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 94W Tc | TO-252AA | 50A | 350A | 0.0084Ohm | 300 mJ | N-Channel | 3110pF @ 15V | 5.1m Ω @ 30A, 10V | 2V @ 50μA | 50A Tc | 25nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPD30P06P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/infineontechnologies-spd30p06p-datasheets-5825.pdf | -60V | -30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | Single | 20 | 125W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 11ns | 20 ns | 30 ns | 30A | 20V | SILICON | DRAIN | 60V | 125W Tc | 120A | 0.075Ohm | 250 mJ | -60V | P-Channel | 1535pF @ 25V | 75m Ω @ 21.5A, 10V | 4V @ 1.7mA | 30A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| BSS123W-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | /files/diodesincorporated-bss123w7f-datasheets-3690.pdf | 100V | 170mA | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Contains Lead | 3 | 6.010099mg | No SVHC | 3 | no | EAR99 | not_compliant | e0 | DUAL | GULL WING | 235 | 3 | 1 | Single | 10 | 300mW | 1 | FET General Purpose Power | Not Qualified | 8 ns | 8ns | 8 ns | 13 ns | 170mA | 20V | SILICON | SWITCHING | 200mW Ta | 6 pF | 100V | N-Channel | 60pF @ 25V | 6 Ω @ 170mA, 10V | 2V @ 1mA | 170mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SPB80N03S2L-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp80n03s2l05aksa1-datasheets-7865.pdf | 30V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 167W Tc | 320A | 0.0072Ohm | 325 mJ | N-Channel | 3320pF @ 25V | 4.9m Ω @ 55A, 10V | 2V @ 110μA | 80A Tc | 89.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPB21N10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb21n10-datasheets-5747.pdf | 100V | 21A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | 90W Tc | 84A | 0.08Ohm | 130 mJ | N-Channel | 865pF @ 25V | 80m Ω @ 15A, 10V | 4V @ 44μA | 21A Tc | 38.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPD04N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd04n03lag-datasheets-5751.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 115W Tc | TO-252AA | 50A | 350A | 0.0057Ohm | 600 mJ | N-Channel | 5199pF @ 15V | 3.8m Ω @ 50A, 10V | 2V @ 80μA | 50A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPB100N03S2L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi100n03s2l03-datasheets-5395.pdf | 30V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 400A | 0.0034Ohm | 810 mJ | N-Channel | 8180pF @ 25V | 2.7m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPD02N60C3BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu02n60c3bkma1-datasheets-2264.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 25W Tc | TO-252AA | 1.8A | 5.4A | 3Ohm | 50 mJ | N-Channel | 200pF @ 25V | 3 Ω @ 1.1A, 10V | 3.9V @ 80μA | 1.8A Tc | 12.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSS223PW L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss223pwl6327-datasheets-5632.pdf | SC-70, SOT-323 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 250mW Ta | 0.39A | 22 pF | P-Channel | 56pF @ 15V | 1.2 Ω @ 390mA, 4.5V | 1.2V @ 1.5μA | 390mA Ta | 0.62nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| SPD35N10 | Infineon Technologies | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd35n10-datasheets-5778.pdf | 100V | 35A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | GULL WING | 260 | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 63ns | 23 ns | 39 ns | 35A | 20V | SILICON | 150W Tc | 140A | 0.044Ohm | 245 mJ | 100V | N-Channel | 1570pF @ 25V | 44m Ω @ 26.4A, 10V | 35A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSO303SPNTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | /files/infineontechnologies-bso303spntma1-datasheets-5493.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED,LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.35W Ta | 8.9A | 35.6A | 0.021Ohm | 97 mJ | P-Channel | 1754pF @ 25V | 21m Ω @ 8.9A, 10V | 2V @ 100μA | 8.9A Ta | 69nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SPB100N03S2-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp100n03s203-datasheets-5425.pdf | 30V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | 4 | 1 | Not Qualified | R-PSSO-G2 | 40ns | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 400A | 0.003Ohm | 810 mJ | N-Channel | 7020pF @ 25V | 3m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPB80N03S2L-06 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp80n03s2l06-datasheets-5469.pdf | 30V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 23ns | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150W Tc | 320A | 0.0092Ohm | 240 mJ | N-Channel | 2530pF @ 25V | 5.9m Ω @ 80A, 10V | 2V @ 80μA | 80A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPB14N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb14n03la-datasheets-5806.pdf | 25V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 46W Tc | 210A | 0.0136Ohm | 60 mJ | N-Channel | 1043pF @ 15V | 13.6m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 8.3nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPB06N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb06n03la-datasheets-5696.pdf | 25V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | 91A | 0.0095Ohm | 225 mJ | N-Channel | 2653pF @ 15V | 5.9m Ω @ 30A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPP11N60S5HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp11n60s5xksa1-datasheets-1470.pdf | TO-220-3 | 3 | no | EAR99 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PSFM-T3 | 130 ns | 35ns | 20 ns | 150 ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 125W Tc | TO-220AB | 22A | 0.38Ohm | 340 mJ | N-Channel | 1460pF @ 25V | 380m Ω @ 7A, 10V | 5.5V @ 500μA | 11A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSS192PE6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss192pe6327-datasheets-5581.pdf | -250V | -190mA | TO-243AA | Contains Lead | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | SINGLE | FLAT | 255 | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-F3 | 5.2ns | 190mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250V | 1W Ta | 0.19A | 8 pF | P-Channel | 104pF @ 25V | 12 Ω @ 190mA, 10V | 2V @ 130μA | 190mA Ta | 6.1nC @ 10V | 2.8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSP316PE6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp316pe6327-datasheets-5601.pdf | -100V | -680mA | TO-261-4, TO-261AA | Contains Lead | 4 | 1.8W | 1 | PG-SOT223-4 | 146pF | 7.5ns | 680mA | 20V | 100V | 1.8W Ta | P-Channel | 146pF @ 25V | 1.8Ohm @ 680mA, 10V | 2V @ 170μA | 680mA Ta | 6.4nC @ 10V | 1.8 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPU30N03S2L-10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu30n03s2l10-datasheets-5605.pdf | 30V | 30A | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 82W Tc | 120A | 0.0146Ohm | 150 mJ | N-Channel | 1460pF @ 25V | 10m Ω @ 30A, 10V | 2V @ 50μA | 30A Tc | 39.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SPP21N50C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi21n50c3xksa1-datasheets-2189.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 208W | 1 | Not Qualified | R-PSFM-T3 | 10 ns | 5ns | 4.5 ns | 67 ns | 21A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 560V | 500V | 208W Tc | TO-220AB | 63A | 690 mJ | N-Channel | 2400pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 21A Tc | 95nC @ 10V | 10V | ±20V |
