Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SPP21N50C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi21n50c3xksa1-datasheets-2189.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 208W | 1 | Not Qualified | R-PSFM-T3 | 10 ns | 5ns | 4.5 ns | 67 ns | 21A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 560V | 500V | 208W Tc | TO-220AB | 63A | 690 mJ | N-Channel | 2400pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 21A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| BSO4410 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso4410-datasheets-5612.pdf | 30V | 11.1A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 33ns | 11.1A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 44.5A | 0.013Ohm | 126 mJ | N-Channel | 1280pF @ 25V | 13m Ω @ 11.1A, 10V | 2V @ 42μA | 11.1A Ta | 21nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| BSS670S2L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss670s2l-datasheets-5616.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 360mW Ta | 0.54A | 0.825Ohm | 10 pF | N-Channel | 75pF @ 25V | 650m Ω @ 270mA, 10V | 2V @ 2.7μA | 540mA Ta | 2.26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| BSS209PW | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss209pw-datasheets-5624.pdf | SC-70, SOT-323 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 520mW Ta | 0.58A | 0.55Ohm | P-Channel | 89.9pF @ 15V | 550m Ω @ 580mA, 4.5V | 1.2V @ 3.5μA | 580mA Ta | 1.38nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||
| SPP12N50C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa12n50c3xksa1-datasheets-5545.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 560V | 500V | 125W Tc | TO-220AB | 11.6A | 34.8A | 0.38Ohm | 340 mJ | N-Channel | 1200pF @ 25V | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 11.6A Tc | 49nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SPP73N03S2L08XK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp73n03s2l08xk-datasheets-5648.pdf | TO-220-3 | PG-TO220-3-1 | 30V | 107W Tc | N-Channel | 1710pF @ 25V | 8.4mOhm @ 36A, 10V | 2V @ 55μA | 73A Tc | 46.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO4420 | Infineon Technologies | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso4420-datasheets-5589.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 44ns | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 52A | 230 mJ | N-Channel | 2213pF @ 25V | 7.8m Ω @ 13A, 10V | 2V @ 80μA | 13A Ta | 33.7nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| SPP04N60C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa04n60c3xksa1-datasheets-5399.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 50W Tc | TO-220AB | 4.5A | 13.5A | 0.95Ohm | 130 mJ | N-Channel | 490pF @ 25V | 950m Ω @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRLR8113TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr8113tr-datasheets-5675.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 89W Tc | N-Channel | 2920pF @ 15V | 6m Ω @ 15A, 10V | 2.25V @ 250μA | 94A Tc | 32nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB02N60C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb02n60c3atma1-datasheets-5684.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | no | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 25W | 1 | R-PSSO-G2 | 6 ns | 3ns | 12 ns | 68 ns | 1.8A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 25W Tc | 5.4A | 3Ohm | 50 mJ | N-Channel | 200pF @ 25V | 3 Ω @ 1.1A, 10V | 3.9V @ 80μA | 1.8A Tc | 12.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| BSP317PE6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp317pe6327-datasheets-5692.pdf | -250V | -430mA | TO-261-4, TO-261AA | Contains Lead | 4 | unknown | 1.8W | 1 | Other Transistors | 11.1ns | 430mA | 20V | Single | 250V | 1.8W Ta | P-Channel | 262pF @ 25V | 4 Ω @ 430mA, 10V | 2V @ 370μA | 430mA Ta | 15.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPP08N50C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp08n50c3xksa1-datasheets-5576.pdf | TO-220-3 | 8 Weeks | PG-TO220-3-1 | 560V | 83W Tc | N-Channel | 750pF @ 25V | 600mOhm @ 4.6A, 10V | 3.9V @ 350μA | 7.6A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO301SPNTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso301spntma1-datasheets-5585.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | DUAL | GULL WING | 1.79W | 1 | 15 ns | 22ns | 110 ns | 130 ns | 14.9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 60A | P-Channel | 5890pF @ 25V | 8m Ω @ 14.9A, 10V | 2V @ 250μA | 12.6A Ta | 136nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRLR7833TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7833-datasheets-4198.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 140W Tc | TO-252AA | 30A | 560A | 0.0045Ohm | 530 mJ | N-Channel | 4010pF @ 15V | 4.5m Ω @ 15A, 10V | 2.3V @ 250μA | 140A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SPP16N50C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa16n50c3xksa1-datasheets-4149.pdf | TO-220-3 | 3 | 3 | yes | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 160W | 1 | Not Qualified | 10 ns | 8ns | 50 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 560V | 500V | 160W Tc | TO-220AB | 48A | 0.28Ohm | 460 mJ | N-Channel | 1600pF @ 25V | 280m Ω @ 10A, 10V | 3.9V @ 675μA | 16A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| BSO203SPNTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso203spntma1-datasheets-5514.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | DUAL | GULL WING | 1 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.35W Ta | 9A | 36A | 0.021Ohm | 97 mJ | P-Channel | 2265pF @ 15V | 21m Ω @ 9A, 4.5V | 1.2V @ 100μA | 9A Ta | 50.4nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| IPP14N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp14n03la-datasheets-5522.pdf | 25V | 30A | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 46W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 33ns | 2.6 ns | 17 ns | 30A | 20V | SILICON | SWITCHING | 46W Tc | TO-220AB | 210A | 0.0139Ohm | 60 mJ | 25V | N-Channel | 1043pF @ 15V | 13.9m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 8.3nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| HRFZ44N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-hrfz44n-datasheets-5527.pdf | TO-220-3 | TO-220-3 | 55V | 120W Tc | N-Channel | 1060pF @ 25V | 22mOhm @ 25A, 10V | 4V @ 250μA | 49A Tc | 75nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP100N03S2L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi100n03s2l03-datasheets-5395.pdf | 30V | 100A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 67ns | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 400A | 0.0037Ohm | 810 mJ | N-Channel | 8180pF @ 25V | 3m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IRF3000 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 300V | 2.5W Ta | N-Channel | 730pF @ 25V | 400mOhm @ 960mA, 10V | 5V @ 250μA | 1.6A Ta | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU07N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu07n03la-datasheets-5539.pdf | 25V | 30A | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e0 | Tin/Lead (Sn/Pb) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 18ns | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 83W Tc | 210A | 0.0101Ohm | 375 mJ | N-Channel | 2653pF @ 15V | 6.5m Ω @ 30A, 10V | 2V @ 40μA | 30A Tc | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| IRFBA1405P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-273AA | 3 | EAR99 | HIGH RELIABILITY | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 330W Tc | 95A | 680A | 0.005Ohm | 560 mJ | N-Channel | 5480pF @ 25V | 5m Ω @ 101A, 10V | 4V @ 250μA | 174A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SPA12N50C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa12n50c3xksa1-datasheets-5545.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | yes | AVALANCHE RATED | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 560V | 500V | 33W Tc | TO-220AB | 11.6A | 34.8A | 0.38Ohm | 340 mJ | N-Channel | 1200pF @ 25V | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 11.6A Tc | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| BSL207SP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsl207sp-datasheets-5552.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | yes | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | GULL WING | 6 | 1 | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2W Ta | 6A | 24A | 0.041Ohm | 44 mJ | P-Channel | 1007pF @ 15V | 41m Ω @ 6A, 4.5V | 1.2V @ 40μA | 6A Ta | 20nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||
| BSP171PE6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp171ph6327xtsa1-datasheets-0653.pdf | -60V | -1.9A | TO-261-4, TO-261AA | Contains Lead | 4 | 4 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1.8W | 1 | 8ns | 1.9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 1.8W Ta | 0.3Ohm | 55 pF | P-Channel | 460pF @ 25V | 300m Ω @ 1.9A, 10V | 2V @ 460μA | 1.9A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| BSO4822 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso4822-datasheets-5568.pdf | 30V | 12.7A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | 38ns | 16 ns | 30 ns | 12.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 51A | 0.01Ohm | 165 mJ | 30V | N-Channel | 1640pF @ 25V | 10m Ω @ 12.7A, 10V | 2V @ 55μA | 12.7A Ta | 26.2nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||
| IPU13N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf13n03lag-datasheets-2614.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 46W Tc | 30A | 210A | 0.0128Ohm | 60 mJ | N-Channel | 1043pF @ 15V | 12.8m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 8.3nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SPP42N03S2L-13 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb42n03s2l13-datasheets-2784.pdf | 30V | 42A | TO-220-3 | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 83W | 1 | FET General Purpose Power | Not Qualified | 12ns | 14.5 ns | 24 ns | 42A | 20V | SILICON | SWITCHING | 83W Tc | TO-220AB | 248A | 0.0199Ohm | 110 mJ | 30V | N-Channel | 1130pF @ 25V | 12.9m Ω @ 21A, 10V | 2V @ 37μA | 42A Tc | 30.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SPP100N03S2-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-spp100n03s203-datasheets-5425.pdf | 30V | 100A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | e0 | Tin/Lead (Sn/Pb) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 40ns | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 400A | 0.0033Ohm | 810 mJ | N-Channel | 7020pF @ 25V | 3.3m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| SPW12N50C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spw12n50c3fksa1-datasheets-5429.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Tin (Sn) | SINGLE | 3 | 125W | 1 | R-PSFM-T3 | 10 ns | 8ns | 8 ns | 45 ns | 11.6A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | 560V | 125W Tc | TO-247AD | 34.8A | 0.38Ohm | 340 mJ | N-Channel | 1200pF @ 25V | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 11.6A Tc | 49nC @ 10V | 10V | ±20V |
