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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLR7833TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7833-datasheets-4198.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 140W Tc | TO-252AA | 30A | 560A | 0.0045Ohm | 530 mJ | N-Channel | 4010pF @ 15V | 4.5m Ω @ 15A, 10V | 2.3V @ 250μA | 140A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7494TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7494tr-datasheets-5345.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 150V | N-Channel | 1750pF @ 25V | 44mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Ta | 54nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1302S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 200W Tc | N-Channel | 3600pF @ 25V | 4m Ω @ 104A, 10V | 4V @ 250μA | 174A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002T-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-2n7002t7f-datasheets-3823.pdf | 60V | 115mA | SOT-523 | 1.6mm | 750μm | 800μm | Contains Lead | 3 | 2.012816mg | No SVHC | 3 | EAR99 | not_compliant | e0 | DUAL | GULL WING | 235 | 3 | 1 | Single | 10 | 150mW | 1 | FET General Purpose Power | Not Qualified | 7 ns | 11 ns | 115mA | 20V | SILICON | SWITCHING | 150mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | 115mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFR9N20DTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | 200V | 9.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | 16ns | 9.4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 86W Tc | TO-252AA | 38A | 0.38Ohm | 100 mJ | N-Channel | 560pF @ 25V | 380m Ω @ 5.6A, 10V | 5.5V @ 250μA | 9.4A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLU7833 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7833-datasheets-4198.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 30V | 140W Tc | N-Channel | 4010pF @ 15V | 4.5mOhm @ 15A, 10V | 2.3V @ 250μA | 140A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXM41N10FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxm41n10fta-datasheets-5273.pdf | 100V | 170mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 7.994566mg | 3 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | 360mW | 10 ns | 10ns | 10 ns | 15 ns | 170mA | 20V | 360mW Ta | 100V | N-Channel | 25pF @ 25V | 8 Ω @ 150mA, 4.5V | 1.5V @ 1mA | 170mA Ta | 3V 4.5V | ±40V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS119E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss119l6433htma1-datasheets-4620.pdf | 100V | 170mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | EAR99 | unknown | 8541.21.00.95 | e3 | MATTE TIN | DUAL | GULL WING | 3 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | 5ns | 170mA | SILICON | SINGLE WITH BUILT-IN DIODE | 360mW Ta | 0.17A | 10Ohm | 6 pF | N-Channel | 78pF @ 25V | 6 Ω @ 170mA, 10V | 2.3V @ 50μA | 170mA Ta | 2.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF6603 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6603-datasheets-5153.pdf | DirectFET™ Isometric MT | 30V | 3.6W Ta 42W Tc | N-Channel | 6590pF @ 15V | 3.4m Ω @ 25A, 10V | 2.5V @ 250μA | 27A Ta 92A Tc | 72nC @ 4.5V | 4.5V 10V | +20V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 94-3250 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-943250-datasheets-5296.pdf | DirectFET™ Isometric MQ | 30V | 2.3W Ta 42W Tc | N-Channel | 2270pF @ 15V | 11.5m Ω @ 12A, 7V | 2.1V @ 250μA | 12A Ta 49A Tc | 26nC @ 4.5V | 4.5V 7V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3707Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 50W Tc | TO-252AA | 30A | 220A | 0.0095Ohm | 42 mJ | N-Channel | 1150pF @ 15V | 9.5m Ω @ 15A, 10V | 2.25V @ 250μA | 56A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB17N60K | Vishay Siliconix | $1.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb17n60k-datasheets-5318.pdf | 600V | 17A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | 1 | Single | TO-220AB | 2.7nF | 25 ns | 82ns | 32 ns | 38 ns | 17A | 30V | 600V | 340W Tc | 420mOhm | N-Channel | 2700pF @ 25V | 420mOhm @ 10A, 10V | 5V @ 250μA | 17A Tc | 99nC @ 10V | 420 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSS123-7 | Diodes Incorporated | $0.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/diodesinc-bss1237-datasheets-5271.pdf | 100V | 170mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Contains Lead | 3 | 8.193012mg | No SVHC | 3 | EAR99 | not_compliant | e0 | DUAL | GULL WING | 235 | 3 | 1 | Single | 10 | 300mW | 1 | FET General Purpose Power | Not Qualified | 8 ns | 8ns | 8 ns | 13 ns | 170mA | 20V | SILICON | SWITCHING | 300mW Ta | 6 pF | 100V | N-Channel | 60pF @ 25V | 6 Ω @ 170mA, 10V | 2V @ 1mA | 170mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFA10N80P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfa10n80ptrl-datasheets-5276.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 30 Weeks | 800V | 300W Tc | N-Channel | 2050pF @ 25V | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 10A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXM64N035GTA | Diodes Incorporated | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxm64n035gta-datasheets-5251.pdf | 35V | 6.7A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Contains Lead | 4 | 7.994566mg | EAR99 | LOW THRESHOLD | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | 40 | 2W | 1 | Not Qualified | R-PDSO-G4 | 4.2 ns | 4.6ns | 8 ns | 20.5 ns | 6.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2W Ta | 4.8A | 0.05Ohm | 35V | N-Channel | 950pF @ 25V | 50m Ω @ 3.7A, 10V | 1V @ 250μA | 4.8A Ta 6.7A Tc | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFL4315 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | TO-261-4, TO-261AA | 4 | EAR99 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 2.8W Ta | 2.6A | 21A | 0.185Ohm | 38 mJ | N-Channel | 420pF @ 25V | 185m Ω @ 1.6A, 10V | 5V @ 250μA | 2.6A Ta | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7821TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7821tr-datasheets-5238.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 13.6A | 100A | 0.0091Ohm | 44 mJ | N-Channel | 1010pF @ 15V | 9.1m Ω @ 13A, 10V | 1V @ 250μA | 13.6A Ta | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BTS115ANKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/infineontechnologies-bts115anksa1-datasheets-5244.pdf | TO-220-3 | 3 | 3 | LOGIC LEVEL COMPATIBLE | SINGLE | 1 | 15.5A | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 50V | 50V | 50W Tc | TO-220AB | 62A | 0.12Ohm | N-Channel | 735pF @ 25V | 120m Ω @ 7.8A, 4.5V | 2.5V @ 1mA | 15.5A Tc | 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3410 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-251-3 Short Leads, IPak, TO-251AA | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3W Ta 110W Tc | 30A | 125A | 0.039Ohm | 140 mJ | N-Channel | 1690pF @ 25V | 39m Ω @ 18A, 10V | 4V @ 250μA | 31A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD07N60S5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/infineontechnologies-spd07n60s5-datasheets-5149.pdf | 650V | 7.3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | No SVHC | 600mOhm | 3 | yes | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | Not Halogen Free | YES | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 83W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 40ns | 20 ns | 170 ns | 7.3A | 20V | 600V | SILICON | DRAIN | SWITCHING | 83W Tc | TO-252AA | 600V | N-Channel | 970pF @ 25V | 4.5 V | 600m Ω @ 4.6A, 10V | 5.5V @ 350μA | 7.3A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSS138N-E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138ne6327-datasheets-5143.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 0.23A | 3.8 pF | N-Channel | 41pF @ 25V | 3.5 Ω @ 230mA, 10V | 1.4V @ 250μA | 230mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BUZ80A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz80a-datasheets-5187.pdf | TO-220-3 | 3 | AVALANCHE RATED | unknown | e0 | Tin/Lead (Sn/Pb) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 3.6A | SILICON | SINGLE | SWITCHING | 800V | 800V | 100W Tc | TO-220AB | 3A | 12A | 3Ohm | 320 mJ | N-Channel | 1350pF @ 25V | 3 Ω @ 2A, 10V | 4V @ 1mA | 3.6A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SPP20N60S5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spp20n60s5-datasheets-5194.pdf&product=infineontechnologies-spp20n60s5-6858007 | 650V | 20A | TO-220-3 | 8.64mm | 4.4mm | 10.26mm | Contains Lead | 3 | 8 Weeks | No SVHC | 3 | yes | AVALANCHE RATED | Tin | No | Halogen Free | 3 | Single | 208W | 1 | FET General Purpose Power | 120 ns | 25ns | 30 ns | 140 ns | 20A | 20V | 600V | 600V | SILICON | DRAIN | SWITCHING | 4.5V | 208W Tc | TO-220AB | 40A | 690 mJ | 600V | N-Channel | 3000pF @ 25V | 4.5 V | 190m Ω @ 13A, 10V | 5.5V @ 1mA | 20A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| BSP123L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp123l6327htsa1-datasheets-5079.pdf | TO-261-4, TO-261AA | 4 | 4 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 4 | 40 | 1.79W | 1 | 3.3 ns | 3.2ns | 9.4 ns | 8.7 ns | 370mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 1.79W Ta | 0.37A | 6Ohm | N-Channel | 70pF @ 25V | 6 Ω @ 370mA, 10V | 1.8V @ 50μA | 370mA Ta | 2.4nC @ 10V | 2.8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF6607 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6607-datasheets-5167.pdf | DirectFET™ Isometric MT | 30V | 3.6W Ta 42W Tc | N-Channel | 6930pF @ 15V | 3.3m Ω @ 25A, 10V | 2V @ 250μA | 27A Ta 94A Tc | 75nC @ 4.5V | 4.5V 7V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6601 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | DirectFET™ Isometric MT | 20V | 3.6W Ta 42W Tc | N-Channel | 3440pF @ 15V | 3.8m Ω @ 26A, 10V | 2.2V @ 250μA | 26A Ta 85A Tc | 45nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS121ANKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts121anksa1-datasheets-5212.pdf | TO-220-3 | 3 | 3 | LOGIC LEVEL COMPATIBLE | No | SINGLE | 95W | 1 | 25 ns | 110ns | 100 ns | 210 ns | 22A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 100V | 95W Tc | TO-220AB | 88A | N-Channel | 1500pF @ 25V | 100m Ω @ 9.5A, 4.5V | 2.5V @ 1mA | 22A Tc | 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU7821 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlu7821-datasheets-5215.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | e3 | MATTE TIN OVER NICKEL | NO | SINGLE | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 75W Tc | 30A | 260A | 0.01Ohm | 230 mJ | N-Channel | 1030pF @ 15V | 10m Ω @ 15A, 10V | 1V @ 250μA | 65A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6602 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | DirectFET™ Isometric MQ | DIRECTFET™ MQ | 20V | 2.3W Ta 42W Tc | N-Channel | 1420pF @ 10V | 13mOhm @ 11A, 10V | 2.3V @ 250μA | 11A Ta 48A Tc | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS282Z E3180A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Surface Mount | -40°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | /files/infineontechnologies-bts282ze3180a-datasheets-5226.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | compliant | 49V | 300W Tc | N-Channel | 4800pF @ 25V | 6.5m Ω @ 36A, 10V | 2V @ 240μA | 80A Tc | 232nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V |
