Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Lead Length | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SPW20N60S5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-spw20n60s5fksa1-datasheets-5044.pdf | TO-247-3 | 3 | yes | AVALANCHE RATED | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 208W Tc | 20A | 40A | 0.19Ohm | 690 mJ | N-Channel | 3000pF @ 25V | 190m Ω @ 13A, 10V | 5.5V @ 1mA | 20A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFR5410TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr5410tr-datasheets-4735.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 66W Tc | TO-252AA | 13A | 52A | 0.205Ohm | 194 mJ | P-Channel | 760pF @ 25V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSS84P-E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/infineontechnologies-bss84pe6327-datasheets-5060.pdf | -60V | -170mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | unknown | DUAL | GULL WING | 260 | 3 | 40 | 360mW | 1 | Other Transistors | Not Qualified | -930mV | 16.2ns | 170mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 360mW Ta | 8Ohm | P-Channel | 19pF @ 25V | 8 Ω @ 170mA, 10V | 2V @ 20μA | 170mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPP08P06PBKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp08p06pbksa1-datasheets-5064.pdf | TO-220-3 | PG-TO220-3 | 60V | 42W Tc | P-Channel | 420pF @ 25V | 300mOhm @ 6.2A, 10V | 4V @ 250μA | 8.8A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY4N65X2 | IXYS | $2.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 80W Tc | N-Channel | 455pF @ 25V | 850m Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 8.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3716S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3716-datasheets-4972.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 210W Tc | N-Channel | 5090pF @ 10V | 4m Ω @ 90A, 10V | 3V @ 250μA | 180A Tc | 79nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFD10P03LSM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfd10p03lsm-datasheets-4939.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | P-Channel | 1035pF @ 25V | 200m Ω @ 10A, 5V | 2V @ 250μA | 10A Tc | 30nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5802TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf5802tr-datasheets-5007.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W | 150V | 150V | MO-193AA | 0.9A | 7A | 9.5 mJ | N-Channel | 88pF @ 25V | 1.2 Ω @ 540mA, 10V | 5.5V @ 250μA | 900mA Ta | 6.8nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFP2N10L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfp2n10l-datasheets-4947.pdf | TO-220-3 | TO-220-3 | 100V | 25W Tc | N-Channel | 200pF @ 25V | 1.05Ohm @ 2A, 5V | 2V @ 250μA | 2A Tc | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFP30P05 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfp30p05-datasheets-4949.pdf | TO-220-3 | 50V | P-Channel | 3200pF @ 25V | 65m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 170nC @ 20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFP4N100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfp4n100-datasheets-4950.pdf | TO-220-3 | 1000V | N-Channel | 3.5 Ω @ 2.5A, 10V | 4V @ 250μA | 4.3A Tc | 120nC @ 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFD14N05 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfd14n05sm9a-datasheets-6205.pdf | 50V | 14A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | No SVHC | 100mOhm | 3 | yes | EAR99 | No | 9.65mm | e3 | Tin (Sn) | Single | 48W | 1 | FET General Purpose Power | 26ns | 17 ns | 45 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 4V | 48W Tc | 50V | N-Channel | 570pF @ 25V | 100m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 40nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7534D1TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Micro8™ | 20V | 1.25W Ta | P-Channel | 1066pF @ 10V | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250μA | 4.3A Ta | 15nC @ 5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFP30N06LE | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | /files/sparkfunelectronics-dev10618-datasheets-1185.pdf | 60V | 30A | TO-220-3 | Lead Free | No SVHC | 3 | 2.54mm | Single | 96W | 1 | TO-220-3 | 1.35nF | 88ns | 40 ns | 30 ns | 30A | 10V | 60V | 60V | 2V | 96W Tc | 47mOhm | 60V | N-Channel | 1350pF @ 25V | 2 V | 47mOhm @ 30A, 5V | 2V @ 250μA | 30A Ta | 62nC @ 10V | 47 mΩ | 5V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||
| RFP8P05 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfd8p05-datasheets-4894.pdf | -50V | -8A | TO-220-3 | Contains Lead | 2.5W | Single | 48W | 420pF | 30ns | 20 ns | 42 ns | 3.1A | 20V | 50V | -50V | P-Channel | 300m Ω @ 8A, 10V | 4V @ 250μA | 8A Tc | 80nC @ 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFP3055LE | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfd3055lesm-datasheets-4934.pdf | TO-220-3 | TO-220-3 | 60V | 38W Tc | N-Channel | 350pF @ 25V | 107mOhm @ 8A, 5V | 3V @ 250μA | 11A Tc | 11.3nC @ 10V | 5V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE802DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie802dft1ge3-datasheets-4967.pdf | 10-PolarPAK® (L) | 14 Weeks | 10 | No | 1 | Single | 10-PolarPAK® (L) | 7nF | 42.7A | 20V | 30V | 5.2W Ta 125W Tc | 1.9mOhm | 30V | N-Channel | 7000pF @ 15V | 1.9mOhm @ 23.6A, 10V | 2.7V @ 250μA | 60A Tc | 160nC @ 10V | 1.9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3716 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3716-datasheets-4972.pdf | TO-220-3 | 20V | 210W Tc | N-Channel | 5090pF @ 10V | 4m Ω @ 90A, 10V | 3V @ 250μA | 180A Tc | 79nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW2500 | Alpha & Omega Semiconductor Inc. | $1.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | TO-262 | 6.46nF | 152A | 150V | 2.1W Ta 375W Tc | N-Channel | 6460pF @ 75V | 6.2mOhm @ 20A, 10V | 3.5V @ 250μA | 11.5A Ta 152A Tc | 136nC @ 10V | 6.2 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3711TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3711tr-datasheets-4743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | 2.5W Ta 120W Tc | N-Channel | 2980pF @ 10V | 6.5m Ω @ 15A, 10V | 3V @ 250μA | 100A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 45W | 1 | TO-220SIS | 1.2nF | 25ns | 12 ns | 7A | 30V | 650V | 45W Tc | N-Channel | 1200pF @ 25V | 980mOhm @ 3.5A, 10V | 4V @ 1mA | 7A Ta | 24nC @ 10V | 980 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFP40N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-rfp40n10-datasheets-4935.pdf | 100V | 40A | TO-220-3 | Lead Free | No SVHC | 3 | 40A | 100V | Single | 160W | 1 | TO-220-3 | 30ns | 20 ns | 42 ns | 40A | 20V | 100V | 4V | 160W Tc | 40mOhm | 100V | N-Channel | 40mOhm @ 40A, 10V | 4V @ 250μA | 40A Tc | 300nC @ 20V | 40 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N10S403ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipi120n10s403aksa1-datasheets-9425.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 14 Weeks | 3 | yes | EAR99 | Halogen Free | 20 ns | 10ns | 40 ns | 45 ns | 120A | 20V | 100V | 250W Tc | N-Channel | 10120pF @ 25V | 3.5m Ω @ 100A, 10V | 3.5V @ 180μA | 120A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFD15P05SM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfd15p05-datasheets-4902.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 50V | 80W Tc | P-Channel | 1150pF @ 25V | 150mOhm @ 15A, 10V | 4V @ 250μA | 15A Tc | 150nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460_R4943 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/onsemiconductor-irfp460r4943-datasheets-4907.pdf | TO-247-3 | 500V | N-Channel | 4100pF @ 25V | 270m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 190nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR120_R4941 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-irfu120r4941-datasheets-4903.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 100V | 50W Tc | N-Channel | 350pF @ 25V | 270mOhm @ 5.9A, 10V | 4V @ 250μA | 8.4A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU220_R4941 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-irfu220r4941-datasheets-4914.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 200V | 50W Tc | N-Channel | 330pF @ 25V | 800mOhm @ 2.4A, 10V | 4V @ 250μA | 4.6A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFP14N05 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfd14n05sm9a-datasheets-6205.pdf | TO-220-3 | 50V | N-Channel | 570pF @ 25V | 100m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 40nC @ 20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFD16N05SM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfd16n05sm-datasheets-4916.pdf | 50V | 16A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | yes | EAR99 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 72W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30ns | 30 ns | 55 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 72W Tc | TO-252AA | 0.047Ohm | 50V | N-Channel | 900pF @ 25V | 47m Ω @ 16A, 10V | 4V @ 250μA | 16A Tc | 80nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFR9N20DTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 86W Tc | TO-252AA | 9.4A | 38A | 0.38Ohm | 100 mJ | N-Channel | 560pF @ 25V | 380m Ω @ 5.6A, 10V | 5.5V @ 250μA | 9.4A Tc | 27nC @ 10V | 10V | ±30V |
