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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF6618TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6618tr1-datasheets-6075.pdf | 30V | 150A | DirectFET™ Isometric MT | 5.05mm | Lead Free | No SVHC | 2.2mOhm | 7 | 2.8W | DIRECTFET™ MT | 5.64nF | 71ns | 8.1 ns | 27 ns | 170A | 20V | 30V | 30V | 1.64V | 2.8W Ta 89W Tc | 43 ns | 30V | N-Channel | 5640pF @ 15V | 1.64 V | 2.2mOhm @ 30A, 10V | 2.35V @ 250μA | 30A Ta 170A Tc | 65nC @ 4.5V | 2.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFU4105ZTRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr4105z-datasheets-6029.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 30A | 55V | 48W Tc | N-Channel | 740pF @ 25V | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 30A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1405ZTRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1405zs-datasheets-6042.pdf | TO-220-3 | TO-220AB | 4.78nF | 75A | 55V | 230W Tc | N-Channel | 4780pF @ 25V | 4.9mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 180nC @ 10V | 4.9 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STE110NS20FD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ | Chassis Mount, Screw | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste110ns20fd-datasheets-6105.pdf | 200V | 110A | ISOTOP | 4 | 4 | EAR99 | AVALANCHE RATED | not_compliant | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | STE1 | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 130ns | 140 ns | 245 ns | 110A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 750 mJ | 200V | N-Channel | 7900pF @ 25V | 24m Ω @ 50A, 10V | 4V @ 250μA | 110A Tc | 504nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF2804STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 330W Tc | 75A | 1080A | 0.002Ohm | 540 mJ | N-Channel | 6450pF @ 25V | 2m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFR3710ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3710ztrl-datasheets-6109.pdf | 100V | 42A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 43ns | 42A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 140W Tc | TO-252AA | 220A | 0.018Ohm | 150 mJ | N-Channel | 2930pF @ 25V | 18m Ω @ 33A, 10V | 4V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF2807ZSTRR | Vishay Siliconix | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf2807zstrr-datasheets-6112.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 75A | 75V | 170W Tc | N-Channel | 3270pF @ 25V | 9.4m Ω @ 53A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2807Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf2807zstrr-datasheets-6112.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 170W Tc | TO-220AB | 75A | 350A | 0.0094Ohm | 160 mJ | N-Channel | 3270pF @ 25V | 9.4m Ω @ 53A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF3205Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3205zpbf-datasheets-1803.pdf | TO-220-3 | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 170W Tc | TO-220AB | 75A | 440A | 0.0065Ohm | 250 mJ | N-Channel | 3450pF @ 25V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF1405ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1405zs-datasheets-6042.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 230W Tc | 75A | 600A | 0.0049Ohm | 420 mJ | N-Channel | 4780pF @ 25V | 4.9m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SPD08N50C3BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd08n50c3btma1-datasheets-5910.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 560V | 500V | 83W Tc | TO-252AA | 7.6A | 22.8A | 0.6Ohm | 230 mJ | N-Channel | 750pF @ 25V | 600m Ω @ 4.6A, 10V | 3.9V @ 350μA | 7.6A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF3205ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3205zpbf-datasheets-1803.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 170W Tc | 75A | 440A | 0.0065Ohm | 250 mJ | N-Channel | 3450pF @ 25V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPD30N03S2L-10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd30n03s2l10-datasheets-6058.pdf | 30V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 13ns | 17 ns | 27 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 120A | 0.0146Ohm | 150 mJ | 30V | N-Channel | 1550pF @ 25V | 10m Ω @ 30A, 10V | 2V @ 50μA | 30A Tc | 41.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IRF1405ZTRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1405zs-datasheets-6042.pdf | TO-220-3 | TO-220AB | 4.78nF | 75A | 55V | 230W Tc | N-Channel | 4780pF @ 25V | 4.9mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 180nC @ 10V | 4.9 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP170PE6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp170pe6327-datasheets-5688.pdf | -60V | -1.9A | TO-261-4, TO-261AA | Contains Lead | 4 | 1.8W | 1 | PG-SOT223-4 | 410pF | 28ns | 1.9A | 20V | 60V | 1.8W Ta | P-Channel | 410pF @ 25V | 300mOhm @ 1.9A, 10V | 4V @ 250μA | 1.9A Ta | 14nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPD11N10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd11n10-datasheets-5972.pdf | 100V | 10.5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 46ns | 23 ns | 29 ns | 10.5A | 20V | SILICON | DRAIN | SWITCHING | 50W Tc | 60 mJ | 100V | N-Channel | 400pF @ 25V | 170m Ω @ 7.8A, 10V | 4V @ 21μA | 10.5A Tc | 18.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IPD06N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd06n03lag-datasheets-5724.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 83W Tc | TO-252AA | 50A | 350A | 0.0094Ohm | 225 mJ | N-Channel | 2653pF @ 15V | 5.7m Ω @ 30A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPP21N10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp21n10-datasheets-5988.pdf | 100V | 21A | TO-220-3 | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 90W | 1 | FET General Purpose Power | Not Qualified | 56ns | 23 ns | 37 ns | 21A | 20V | SILICON | 90W Tc | TO-220AB | 84A | 0.08Ohm | 100V | N-Channel | 865pF @ 25V | 80m Ω @ 15A, 10V | 4V @ 44μA | 21A Tc | 38.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPD100N03S2L-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-spd100n03s2l04-datasheets-5992.pdf | 30V | 100A | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 4 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150W Tc | 400A | 0.0063Ohm | 325 mJ | N-Channel | 3320pF @ 25V | 4.2m Ω @ 50A, 10V | 2V @ 100μA | 100A Tc | 89.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SPD50N03S2L-06 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd50n03s2l06t-datasheets-8789.pdf | 30V | 50A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | NOT SPECIFIED | 136W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 19ns | 24 ns | 35 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 136W Tc | 200A | 0.0092Ohm | 250 mJ | 30V | N-Channel | 2530pF @ 25V | 6.4m Ω @ 50A, 10V | 2V @ 85μA | 50A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| IRF3205ZSTRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3205zpbf-datasheets-1803.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 75A | 55V | 170W Tc | N-Channel | 3450pF @ 25V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD04N50C3BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd04n50c3btma1-datasheets-5786.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 560V | 500V | 50W Tc | 4.5A | 13.5A | 0.95Ohm | 130 mJ | N-Channel | 470pF @ 25V | 950m Ω @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF7492 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7492tr-datasheets-5364.pdf | 8-SOIC (0.154, 3.90mm Width) | 200V | 2.5W Ta | N-Channel | 1820pF @ 25V | 79m Ω @ 2.2A, 10V | 2.5V @ 250μA | 3.7A Ta | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR4105Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr4105z-datasheets-6029.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e0 | TIN LEAD | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 48W Tc | TO-252AA | 30A | 120A | 0.0245Ohm | 29 mJ | N-Channel | 740pF @ 25V | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 30A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF3205ZL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3205zpbf-datasheets-1803.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 225 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 170W Tc | 75A | 440A | 0.0065Ohm | 250 mJ | N-Channel | 3450pF @ 25V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPD09N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu09n03lag-datasheets-5465.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 63W Tc | TO-252AA | 50A | 350A | 0.0148Ohm | 75 mJ | N-Channel | 1642pF @ 15V | 8.6m Ω @ 30A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF2804 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2804-datasheets-5944.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 330W Tc | TO-220AB | 75A | 1080A | 0.0023Ohm | 540 mJ | N-Channel | 6450pF @ 25V | 2.3m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SPD03N50C3BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spd03n50c3atma1-datasheets-0187.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 560V | 500V | 38W Tc | TO-252AA | 3.2A | 9.6A | 100 mJ | N-Channel | 350pF @ 25V | 1.4 Ω @ 2A, 10V | 3.9V @ 135μA | 3.2A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FQD4N25TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 250V | 2.5W Ta 37W Tc | N-Channel | 200pF @ 25V | 1.75Ohm @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 5.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD09P06PL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu09p06pl-datasheets-5410.pdf | -60V | -9.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | NOT SPECIFIED | 42W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 168ns | 89 ns | 49 ns | 9.7A | 20V | SILICON | DRAIN | SWITCHING | 60V | 42W Tc | 38.8A | 0.25Ohm | 70 mJ | -60V | P-Channel | 450pF @ 25V | 250m Ω @ 6.8A, 10V | 2V @ 250μA | 9.7A Tc | 21nC @ 10V | 4.5V 10V | ±20V |
