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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF6602 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | DirectFET™ Isometric MQ | DIRECTFET™ MQ | 20V | 2.3W Ta 42W Tc | N-Channel | 1420pF @ 10V | 13mOhm @ 11A, 10V | 2.3V @ 250μA | 11A Ta 48A Tc | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP18P06PHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp18p06phksa1-datasheets-5128.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 81.1W Ta | TO-220AB | 18.6A | 74.4A | 0.13Ohm | 150 mJ | P-Channel | 860pF @ 25V | 130m Ω @ 13.2A, 10V | 4V @ 1mA | 18.7A Ta | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS131E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss131e6327-datasheets-5131.pdf | 240V | 100mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 1A | unknown | e3 | MATTE TIN | 240V | DUAL | GULL WING | 3 | 360mW | 1 | FET General Purpose Power | Not Qualified | 8ns | 110mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 360mW Ta | 26Ohm | 5 pF | N-Channel | 77pF @ 25V | 14 Ω @ 100mA, 10V | 1.8V @ 56μA | 110mA Ta | 3.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSP129E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp129h6327xtsa1-datasheets-9195.pdf | 240V | 280mA | TO-261-4, TO-261AA | Contains Lead | 4 | 4 | EAR99 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 260 | 4 | NOT SPECIFIED | 1.8W | 1 | FET General Purpose Power | Not Qualified | 10ns | 350mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.8W Ta | 0.2A | 0.6A | 20Ohm | N-Channel | 108pF @ 25V | 6 Ω @ 350mA, 10V | 1V @ 108μA | 350mA Ta | 5.7nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460 | IXYS | $2.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-irfp460-datasheets-5147.pdf | 500V | 20A | TO-3P-3 Full Pack | Lead Free | 3 | 3 | yes | No | 3 | Single | 260W | 1 | FET General Purpose Power | 81ns | 65 ns | 85 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 260W Tc | TO-247AD | 80A | 0.27Ohm | 500V | N-Channel | 4200pF @ 25V | 270m Ω @ 12A, 10V | 4V @ 250μA | 20A Tc | 210nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP88E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp88e6327-datasheets-5159.pdf | 240V | 320mA | TO-261-4, TO-261AA | Contains Lead | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | MATTE TIN | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 10ns | 350mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.7W Ta | 0.35A | 1.4A | 6Ohm | N-Channel | 95pF @ 25V | 6 Ω @ 350mA, 10V | 1.4V @ 108μA | 350mA Ta | 6.8nC @ 10V | 2.8V 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSP295E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp295e6327-datasheets-5163.pdf | 50V | 1.8A | TO-261-4, TO-261AA | Contains Lead | 4 | 1.8W | 1 | PG-SOT223-4 | 368pF | 20ns | 1.8A | 20V | 60V | 1.8W Ta | N-Channel | 368pF @ 25V | 300mOhm @ 1.8A, 10V | 1.8V @ 400μA | 1.8A Ta | 17nC @ 10V | 300 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL1503TR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-261-4, TO-261AA | 30V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS87E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss87h6327ftsa1-datasheets-2744.pdf | 240V | 290mA | TO-243AA | Contains Lead | 3 | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | FLAT | 260 | NOT SPECIFIED | 1W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-F3 | 10ns | 260mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1W Ta | 0.29A | N-Channel | 97pF @ 25V | 6 Ω @ 260mA, 10V | 1.8V @ 108μA | 260mA Ta | 5.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3715TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 20V | 3.8W Ta 71W Tc | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss123e6327-datasheets-5104.pdf | 100V | 170mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | NOT SPECIFIED | 360mW | 1 | FET General Purpose Power | Not Qualified | 5ns | 170mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 360mW Ta | 6 pF | N-Channel | 69pF @ 25V | 6 Ω @ 170mA, 10V | 1.8V @ 50μA | 170mA Ta | 2.67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP07N60S5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-spp07n60s5xksa1-datasheets-3550.pdf | 650V | 7.3A | TO-220-3 | 10.36mm | 9.45mm | 4.57mm | Contains Lead | 3 | 8 Weeks | No SVHC | 3 | yes | AVALANCHE RATED | Not Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 83W | 1 | FET General Purpose Power | Not Qualified | 120 ns | 40ns | 20 ns | 170 ns | 7.3A | 20V | 600V | SILICON | DRAIN | 4.5V | 83W Tc | TO-220AB | 14.6A | 0.6Ohm | 600V | N-Channel | 970pF @ 25V | 600m Ω @ 4.6A, 10V | 5.5V @ 350μA | 7.3A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP60R160P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r160p7xksa1-datasheets-5111.pdf | TO-220-3 | 18 Weeks | 650V | 81W Tc | N-Channel | 1317pF @ 400V | 160m Ω @ 6.3A, 10V | 4V @ 350μA | 20A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7476 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 2.5W Ta | MS-012AA | 15A | 0.008Ohm | N-Channel | 2550pF @ 6V | 8m Ω @ 15A, 4.5V | 1.9V @ 250μA | 15A Ta | 40nC @ 4.5V | 2.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFD16N05 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfd16n05sm-datasheets-4916.pdf | 50V | 16A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 2 | yes | EAR99 | MEGAFET | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 72W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30ns | 30 ns | 55 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 72W Tc | TO-252AA | 45A | 0.056Ohm | 50V | N-Channel | 900pF @ 25V | 47m Ω @ 16A, 10V | 4V @ 250μA | 16A Tc | 80nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8103VTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr8103vtrr-datasheets-4872.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 115W Tc | N-Channel | 2672pF @ 16V | 9m Ω @ 15A, 10V | 3V @ 250μA | 91A Tc | 27nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6215L-103 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | 150V | 3.8W Ta 110W Tc | P-Channel | 860pF @ 25V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR5410TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr5410tr-datasheets-4735.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 66W Tc | TO-252AA | 13A | 52A | 0.205Ohm | 194 mJ | P-Channel | 760pF @ 25V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84P-E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/infineontechnologies-bss84pe6327-datasheets-5060.pdf | -60V | -170mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | unknown | DUAL | GULL WING | 260 | 3 | 40 | 360mW | 1 | Other Transistors | Not Qualified | -930mV | 16.2ns | 170mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 360mW Ta | 8Ohm | P-Channel | 19pF @ 25V | 8 Ω @ 170mA, 10V | 2V @ 20μA | 170mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPP08P06PBKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp08p06pbksa1-datasheets-5064.pdf | TO-220-3 | PG-TO220-3 | 60V | 42W Tc | P-Channel | 420pF @ 25V | 300mOhm @ 6.2A, 10V | 4V @ 250μA | 8.8A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP296E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp296e6327-datasheets-5056.pdf | 100V | 1A | TO-261-4, TO-261AA | Contains Lead | 4 | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | DUAL | GULL WING | 260 | 4 | NOT SPECIFIED | 1.79W | 1 | FET General Purpose Power | Not Qualified | 7.9ns | 21.4 ns | 37.4 ns | 1.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.79W Ta | 1A | 4A | 100V | N-Channel | 364pF @ 25V | 700m Ω @ 1.1A, 10V | 1.8V @ 400μA | 1.1A Ta | 17.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSP315P-E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp315pe6327-datasheets-5075.pdf | -60V | -1.17A | TO-261-4, TO-261AA | Contains Lead | 4 | 1.8W | 1 | PG-SOT223-4 | 160pF | 1.17A | 20V | 60V | 1.8W Ta | P-Channel | 160pF @ 25V | 800mOhm @ 1.17A, 10V | 2V @ 160μA | 1.17A Ta | 7.8nC @ 10V | 800 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFP45N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfp45n06-datasheets-5011.pdf | 60V | 45A | TO-220-3 | Contains Lead | 3 | Single | 131W | TO-220-3 | 2.05nF | 74ns | 16 ns | 37 ns | 45A | 20V | 60V | 131W Tc | 28mOhm | 60V | N-Channel | 2050pF @ 25V | 28mOhm @ 45A, 10V | 4V @ 250μA | 45A Tc | 150nC @ 20V | 28 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4228PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfb4228pbf-datasheets-5082.pdf | -150V | -83A | TO-220-3 | 10.6426mm | 16.51mm | 4.82mm | Lead Free | 12 Weeks | No SVHC | 15MOhm | 3 | No | Single | 330W | 1 | TO-220AB | 4.53nF | 18 ns | 24 ns | 83A | 30V | 150V | 150V | 3V | 330W Tc | 110 ns | 15mOhm | 150V | N-Channel | 4530pF @ 25V | 30 V | 15mOhm @ 33A, 10V | 5V @ 250μA | 83A Tc | 107nC @ 10V | 15 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SIE802DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sie802dft1ge3-datasheets-4967.pdf | 10-PolarPAK® (L) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | 14 Weeks | 1.9mOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 25 ns | 20ns | 10 ns | 65 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5.2W Ta 125W Tc | 42.7A | N-Channel | 7000pF @ 15V | 1.9m Ω @ 23.6A, 10V | 2.7V @ 250μA | 60A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPC8109(TE12L) | Toshiba Semiconductor and Storage | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8109te12l-datasheets-5015.pdf | -30V | -10A | 8-SOIC (0.173, 4.40mm Width) | Contains Lead | 8 | 150°C | Other Transistors | 5ns | 10A | Single | 1.9W | 30V | P-Channel | 2260pF @ 10V | 20m Ω @ 5A, 10V | 2V @ 1mA | 10A Ta | 45nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ30A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz30a-datasheets-5017.pdf | 200V | 21A | TO-220-3 | 10mm | 9.25mm | 4.4mm | Contains Lead | 3 | No SVHC | 130mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 70ns | 90 ns | 250 ns | 21A | 20V | 200V | SILICON | 125W Tc | TO-220AB | 180 ns | 84A | 450 mJ | 200V | N-Channel | 1900pF @ 25V | 3 V | 130m Ω @ 13.5A, 10V | 4V @ 1mA | 21A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| 2SK060100L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk060100l-datasheets-4997.pdf | 80V | 500mA | TO-243AA | Lead Free | MiniP3-F1 | 45pF | 500mA | 80V | 1W Ta | N-Channel | 45pF @ 10V | 4Ohm @ 500mA, 10V | 3.5V @ 1mA | 500mA Ta | 4 Ω | 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK0615 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk0615-datasheets-5023.pdf | 80V | 500mA | 3-SIP | Contains Lead | 3 | 3 | EAR99 | unknown | 8541.29.00.95 | SINGLE | 1 | FET General Purpose Power | Not Qualified | 500mA | SILICON | SINGLE | SWITCHING | 1W Ta | 0.5A | 4Ohm | N-Channel | 45pF @ 10V | 4 Ω @ 500mA, 10V | 3.5V @ 1mA | 500mA Ta | 10V | 20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS335N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds335n-datasheets-4963.pdf | 20V | 1.7A | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Single | 500mW | 1 | SuperSOT-3 | 240pF | 29ns | 29 ns | 28 ns | 1.7A | 8V | 20V | 500mW Ta | 140mOhm | 20V | N-Channel | 240pF @ 10V | 110mOhm @ 1.7A, 4.5V | 1V @ 250μA | 1.7A Ta | 9nC @ 4.5V | 110 mΩ | 2.7V 4.5V | 8V |
