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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA08N120P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1200V | 50W Tc | N-Channel | 333pF @ 25V | 25 Ω @ 400mA, 10V | 4.5V @ 50μA | 800mA Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS17N20DTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 200V | 3.8W Ta 140W Tc | N-Channel | 1100pF @ 25V | 170mOhm @ 9.8A, 10V | 5.5V @ 250μA | 16A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2907ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf2907zpbf-datasheets-0354.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 4.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 140ns | 100 ns | 97 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 680A | 690 mJ | 75V | N-Channel | 7500pF @ 25V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IRFR5410TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr5410tr-datasheets-4735.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 66W Tc | TO-252AA | 13A | 52A | 0.205Ohm | 194 mJ | P-Channel | 760pF @ 25V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPI65R190CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r190cfdatma1-datasheets-1970.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 18 Weeks | yes | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 151W | 1 | Not Qualified | R-PSIP-T3 | 12 ns | 8.4ns | 6.4 ns | 53.2 ns | 17.5A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 151W Tc | 57.2A | 484 mJ | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 730μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFR3711TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3711tr-datasheets-4743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 2.5W Ta 120W Tc | TO-252AA | 30A | 440A | 0.0065Ohm | 460 mJ | N-Channel | 2980pF @ 10V | 6.5m Ω @ 15A, 10V | 3V @ 250μA | 100A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTA120N04T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp120n04t2-datasheets-4305.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 8ns | 11 ns | 16 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 360A | 0.0061Ohm | 400 mJ | 40V | N-Channel | 3240pF @ 25V | 6.1m Ω @ 25A, 10V | 4V @ 250μA | 120A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPI320N20N3GAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp320n20n3gxksa1-datasheets-4150.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 18 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 136W | 1 | Not Qualified | R-PSIP-T3 | 11 ns | 9ns | 4 ns | 21 ns | 34A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 136W Tc | 0.032Ohm | N-Channel | 2350pF @ 100V | 32m Ω @ 34A, 10V | 4V @ 90μA | 34A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPI65R190CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r190cfdatma1-datasheets-1970.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | 650V | 151W Tc | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 700μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP80N12T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120V | 120V | 325W Tc | TO-220AB | 80A | 200A | 0.017Ohm | 400 mJ | N-Channel | 4740pF @ 25V | 17m Ω @ 40A, 10V | 4.5V @ 100μA | 80A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4H02NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4h02nft1g-datasheets-1719.pdf | 8-PowerTDFN | Lead Free | 5 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 193A | Single | 25V | 3.13W Ta 83W Tc | N-Channel | 2652pF @ 12V | 1.4m Ω @ 30A, 10V | 2.1V @ 250μA | 37A Ta 193A Tc | 40.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FKP202 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-fkp202-datasheets-4642.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | yes | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 45A | SILICON | SINGLE | ISOLATED | SWITCHING | 200V | 250V | 40W Tc | TO-220AB | 180A | 0.053Ohm | 200 mJ | N-Channel | 2000pF @ 25V | 53m Ω @ 22A, 10V | 4.5V @ 1mA | 45A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRLU024 | Vishay Siliconix | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6 Weeks | 3 | No | Single | 2.5W | 1 | TO-251AA | 870pF | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | 60V | 2.5W Ta 42W Tc | 100mOhm | 60V | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTA28P065T | IXYS | $4.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta28p065t-datasheets-4647.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 83W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 28A | 15V | SILICON | DRAIN | SWITCHING | 65V | 83W Tc | 90A | 0.045Ohm | 200 mJ | -65V | P-Channel | 2030pF @ 25V | 45m Ω @ 14A, 10V | 4.5V @ 250μA | 28A Tc | 46nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||
| IPA50R199CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa50r199cpxksa1-datasheets-4648.pdf | TO-220-3 Full Pack | 10.65mm | 16.15mm | 4.85mm | 3 | No SVHC | 3 | yes | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 139W | 1 | Not Qualified | 35 ns | 14ns | 10 ns | 80 ns | 17A | 20V | 550V | SILICON | ISOLATED | SWITCHING | 139W Tc | TO-220AB | 40A | 0.199Ohm | 500V | N-Channel | 1800pF @ 100V | 3 V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 17A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRFR3706TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 88W Tc | TO-252AA | 30A | 280A | 0.009Ohm | 220 mJ | N-Channel | 2410pF @ 10V | 9m Ω @ 15A, 10V | 2V @ 250μA | 75A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR3707TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 87W Tc | N-Channel | 1990pF @ 15V | 13mOhm @ 15A, 10V | 3V @ 250μA | 61A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK40N30L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 40A | 300V | 357W Tc | N-Channel | 3270pF @ 25V | 85m Ω @ 20A, 10V | 4.1V @ 250μA | 40A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB9506L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3706TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 20V | 88W Tc | N-Channel | 2410pF @ 10V | 9mOhm @ 15A, 10V | 2V @ 250μA | 75A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2407TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 110W Tc | TO-252AA | 42A | 170A | 0.026Ohm | 130 mJ | N-Channel | 2400pF @ 25V | 26m Ω @ 25A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPW65R420CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r420cfdxksa1-datasheets-7631.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 83.3W | 1 | R-PSFM-T3 | 10 ns | 7ns | 8 ns | 38 ns | 8.7A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 83.3W Tc | 27A | 0.42Ohm | 227 mJ | N-Channel | 870pF @ 100V | 420m Ω @ 3.4A, 10V | 4.5V @ 340μA | 8.7A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR2407TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | YES | FET General Purpose Power | Single | 75V | 110W Tc | 42A | N-Channel | 2400pF @ 25V | 26m Ω @ 25A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK9A65W,S5X | Toshiba Semiconductor and Storage | $3.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 700pF | 9.3A | 650V | 30W Tc | N-Channel | 700pF @ 300V | 500mOhm @ 4.6A, 10V | 3.5V @ 350μA | 9.3A Ta | 20nC @ 10V | 500 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT270L | Alpha & Omega Semiconductor Inc. | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 140A | 75V | 2.1W Ta 500W Tc | N-Channel | 10350pF @ 37.5V | 2.6m Ω @ 20A, 10V | 3V @ 250μA | 21.5A Ta 140A Tc | 215nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH4005SCTQ | Diodes Incorporated | $1.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh4005sctq-datasheets-4637.pdf | TO-220-3 | 18 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 165W Tc | N-Channel | 2846pF @ 20V | 4m Ω @ 20A, 10V | 3V @ 250μA | 150A Tc | 48nC @ 10V | 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP05N100 | IXYS | $11.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixta05n100hv-datasheets-3022.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 17Ohm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 19ns | 28 ns | 40 ns | 750mA | 30V | SILICON | DRAIN | SWITCHING | 1000V | 40W Tc | TO-220AB | 0.75A | 3A | 100 mJ | 1kV | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 250μA | 750mA Tc | 7.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| SIHB15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb15n65ege3-datasheets-4563.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 18 Weeks | yes | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 34W | 1 | R-PSSO-G2 | 24ns | 25 ns | 48 ns | 15A | 4V | SILICON | SWITCHING | 650V | 650V | 34W Tc | 38A | 0.28Ohm | 286 mJ | N-Channel | 1640pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPB180N03S4LH0ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb180n03s4lh0atma1-datasheets-4564.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | 7 | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 9 ns | 7ns | 25 ns | 60 ns | 180A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | 0.00095Ohm | 980 mJ | N-Channel | 23000pF @ 25V | 0.95m Ω @ 100A, 10V | 2.2V @ 200μA | 180A Tc | 300nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IPA65R190CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r190cfdatma2-datasheets-3420.pdf | TO-220-3 Full Pack | 18 Weeks | 650V | 34W Tc | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 700μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V |
