Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDMS86550ET60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms86550et60-datasheets-4424.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | 56.5mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | 1 | Single | NOT SPECIFIED | 43 ns | 27ns | 11 ns | 42 ns | 245A | 20V | 3.3W Ta 187W Tc | 60V | N-Channel | 8235pF @ 30V | 1.65m Ω @ 32A, 10V | 4.5V @ 250μA | 32A Ta 245A Tc | 154nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP65R190CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r190cfdatma1-datasheets-1970.pdf | TO-220-3 | 18 Weeks | 650V | 151W Tc | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 700μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB18N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb18n60ege3-datasheets-4621.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 179W Tc | 18A | 45A | 0.202Ohm | 204 mJ | N-Channel | 1640pF @ 100V | 202m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S2L05ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-ipb100n06s2l05atma2-datasheets-4629.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.31mm | 4.57mm | 9.45mm | 2 | 10 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | R-PSSO-G2 | 18 ns | 25ns | 24 ns | 98 ns | 100A | 20V | 55V | SILICON | DRAIN | 300W Tc | 400A | 0.0056Ohm | 810 mJ | 55V | N-Channel | 5660pF @ 25V | 4.4m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| TK9A65W,S5X | Toshiba Semiconductor and Storage | $3.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 700pF | 9.3A | 650V | 30W Tc | N-Channel | 700pF @ 300V | 500mOhm @ 4.6A, 10V | 3.5V @ 350μA | 9.3A Ta | 20nC @ 10V | 500 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT270L | Alpha & Omega Semiconductor Inc. | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 140A | 75V | 2.1W Ta 500W Tc | N-Channel | 10350pF @ 37.5V | 2.6m Ω @ 20A, 10V | 3V @ 250μA | 21.5A Ta 140A Tc | 215nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH4005SCTQ | Diodes Incorporated | $1.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh4005sctq-datasheets-4637.pdf | TO-220-3 | 18 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 165W Tc | N-Channel | 2846pF @ 20V | 4m Ω @ 20A, 10V | 3V @ 250μA | 150A Tc | 48nC @ 10V | 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP05N100 | IXYS | $11.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixta05n100hv-datasheets-3022.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 17Ohm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 19ns | 28 ns | 40 ns | 750mA | 30V | SILICON | DRAIN | SWITCHING | 1000V | 40W Tc | TO-220AB | 0.75A | 3A | 100 mJ | 1kV | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 250μA | 750mA Tc | 7.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| SIHB15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb15n65ege3-datasheets-4563.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 18 Weeks | yes | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 34W | 1 | R-PSSO-G2 | 24ns | 25 ns | 48 ns | 15A | 4V | SILICON | SWITCHING | 650V | 650V | 34W Tc | 38A | 0.28Ohm | 286 mJ | N-Channel | 1640pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPB180N03S4LH0ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb180n03s4lh0atma1-datasheets-4564.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | 7 | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 9 ns | 7ns | 25 ns | 60 ns | 180A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | 0.00095Ohm | 980 mJ | N-Channel | 23000pF @ 25V | 0.95m Ω @ 100A, 10V | 2.2V @ 200μA | 180A Tc | 300nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| TK60E08K3,S1X(S | Toshiba Semiconductor and Storage | $8.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 12 Weeks | 60A | 75V | 128W | N-Channel | 9m Ω @ 30A, 10V | 75nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF23N60E-GE3 | Vishay Siliconix | $13.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf23n60ege3-datasheets-4470.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 1 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 35W Tc | TO-220AB | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPW65R420CFDFKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp65r420cfdxksa2-datasheets-7593.pdf | TO-247-3 | 18 Weeks | 650V | 83.3W Tc | N-Channel | 870pF @ 100V | 420m Ω @ 3.4A, 10V | 4.5V @ 300μA | 8.7A Tc | 31.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP05N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp05n100p-datasheets-4475.pdf | TO-220-3 | 3 | 24 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 500mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 50W Tc | TO-220AB | 0.5A | 1.25A | 50 mJ | N-Channel | 196pF @ 25V | 30 Ω @ 250mA, 10V | 4V @ 50μA | 500mA Tc | 8.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLZ44STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irlz44spbf-datasheets-3836.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | Lead Free | 11 Weeks | 1.437803g | 28MOhm | 220 | No | 1 | Single | 3.7W | 1 | D2PAK | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 50A | 10V | 60V | 3.7W Ta 150W Tc | 28mOhm | 60V | N-Channel | 3300pF @ 25V | 28mOhm @ 31A, 5V | 2V @ 250μA | 50A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| IRLR024TR | Vishay Siliconix | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | 60V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 21 Weeks | 2 | No | Single | 2.5W | D-Pak | 870pF | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | 60V | 2.5W Ta 42W Tc | 100mOhm | 60V | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| IRFI7536GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | Lead Free | 14 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 86A | Single | 60V | 4V | 75W Tc | N-Channel | 6600pF @ 48V | 3.4m Ω @ 75A, 10V | 4V @ 150μA | 86A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY90N055T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 150W Tc | TO-252AA | 90A | 230A | 0.0084Ohm | 300 mJ | N-Channel | 2770pF @ 25V | 8.4m Ω @ 25A, 10V | 4V @ 250μA | 90A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SUD50N06-08H-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0608he3-datasheets-4499.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | 2 | 13 Weeks | 3 | yes | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 136W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 28 ns | 13ns | 10 ns | 50 ns | 93A | 20V | SILICON | DRAIN | SWITCHING | 3W Ta 136W Tc | 50A | 100A | 0.0078Ohm | 125 mJ | 60V | N-Channel | 7000pF @ 25V | 7.8m Ω @ 20A, 10V | 4.5V @ 250μA | 93A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| AOTF25S65 | Alpha & Omega Semiconductor Inc. | $3.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 3 | 16 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 50W Tc | TO-220AB | 104A | 0.19Ohm | 750 mJ | N-Channel | 1278pF @ 100V | 190m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 26.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDBL86563-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdbl86563f085-datasheets-4476.pdf | 8-PowerSFN | 4 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | Single | 240A | 60V | 357W Tj | N-Channel | 10300pF @ 30V | 1.5m Ω @ 80A, 10V | 4V @ 250μA | 240A Tc | 169nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLIZ44G | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irliz44gpbf-datasheets-1320.pdf | 60V | 30A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Contains Lead | 21 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 30A | 10V | 60V | 48W Tc | 28mOhm | 60V | N-Channel | 3300pF @ 25V | 28mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| TK11A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 25ns | 12 ns | 11A | 30V | 500V | 45W Tc | N-Channel | 1200pF @ 25V | 600m Ω @ 5.5A, 10V | 4V @ 1mA | 11A Ta | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB86563-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb86563f085-datasheets-4440.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9 Weeks | 1.31247g | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 260 | NOT SPECIFIED | 110A | 60V | 333W Tc | N-Channel | 10100pF @ 30V | 1.8m Ω @ 80A, 10V | 4V @ 250μA | 110A Tc | 163nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP1N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty1n80p-datasheets-3869.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 1A | 20V | SILICON | DRAIN | SWITCHING | 42W Tc | TO-220AB | 1A | 2A | 75 mJ | 800V | N-Channel | 250pF @ 25V | 14 Ω @ 500mA, 10V | 4V @ 50μA | 1A Tc | 9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPA11N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spa11n60c3xksa1-datasheets-4456.pdf&product=infineontechnologies-spa11n60c3xksa1-6857798 | 650V | 11A | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 33W | 1 | Not Qualified | 10 ns | 5ns | 44 ns | 11A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 33W Tc | TO-220AB | N-Channel | 1200pF @ 25V | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 11A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPA60R190E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r190e6xksa1-datasheets-4376.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 34W Tc | TO-220AB | 59A | 0.19Ohm | 418 mJ | N-Channel | 1400pF @ 100V | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 20.2A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTP110N055T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp110n055t-datasheets-4382.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | R-PSFM-T3 | 30ns | 24 ns | 40 ns | 110A | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 300A | 0.007Ohm | 750 mJ | 55V | N-Channel | 3080pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 100μA | 110A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SQD45N05-20L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishay-sqd50n0511lge3-datasheets-7527.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 49 Weeks | yes | EAR99 | GULL WING | 260 | 4 | Single | 40 | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 10ns | 7 ns | 32 ns | 50A | 20V | SILICON | DRAIN | 2.5W Ta 75W Tc | 0.02Ohm | 50V | N-Channel | 1800pF @ 25V | 18m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 43nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPP60R190E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r190e6xksa1-datasheets-4386.pdf | TO-220-3 | 3 | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 151W Tc | TO-220AB | 59A | 0.19Ohm | 418 mJ | N-Channel | 1400pF @ 100V | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 20.2A Tc | 63nC @ 10V | 10V | ±20V |
