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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA220N04T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 40V | 360W Tc | N-Channel | 6820pF @ 25V | 3.5m Ω @ 50A, 10V | 4V @ 250μA | 220A Tc | 112nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP170N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcp170n60-datasheets-4056.pdf | TO-220-3 | 3 | 12 Weeks | 1.8g | 170mOhm | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 21 ns | 12ns | 3.8 ns | 55 ns | 22A | 30V | SILICON | SWITCHING | 227W Tc | TO-220AB | 66A | 525 mJ | 600V | N-Channel | 2860pF @ 380V | 170m Ω @ 11A, 10V | 3.5V @ 250μA | 22A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF740ASTRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf740alpbf-datasheets-5440.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 550MOhm | 3 | No | 1 | Single | D2PAK | 1.03nF | 10 ns | 35ns | 22 ns | 24 ns | 10A | 30V | 400V | 3.1W Ta 125W Tc | 550mOhm | N-Channel | 1030pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTP08N100P | IXYS | $2.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty08n100p-datasheets-5188.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 37ns | 34 ns | 35 ns | 800mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 42W Tc | TO-220AB | 0.8A | 1.8A | 80 mJ | 1kV | N-Channel | 240pF @ 25V | 20 Ω @ 500mA, 10V | 4V @ 50μA | 800mA Tc | 11.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDBL86363-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdbl86363f085-datasheets-4075.pdf | 8-PowerSFN | 6 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 245 | Single | NOT SPECIFIED | 240A | 80V | 357W Tj | N-Channel | 10000pF @ 40V | 2m Ω @ 80A, 10V | 4V @ 250μA | 240A Tc | 169nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA4N100P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 1000V | 150W Tc | N-Channel | 1456pF @ 25V | 3.3 Ω @ 2A, 10V | 6V @ 250μA | 4A Tc | 26nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT280L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot280l-datasheets-4913.pdf | TO-220-3 | 18 Weeks | FET General Purpose Power | 140A | Single | 80V | 2.1W Ta 333W Tc | N-Channel | 11135pF @ 40V | 2.7m Ω @ 20A, 10V | 3.4V @ 250μA | 20.5A Ta 140A Tc | 224nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R160P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r160p7xksa1-datasheets-4089.pdf | TO-220-3 Full Pack | 18 Weeks | 600V | 26W Tc | N-Channel | 1317pF @ 400V | 160m Ω @ 6.3A, 10V | 4V @ 350μA | 20A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP12N50NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf12n50nz-datasheets-4756.pdf | TO-220-3 | 10.36mm | 16.07mm | 4.9mm | 3 | 5 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 170W | 1 | FET General Purpose Power | 20 ns | 50ns | 45 ns | 60 ns | 11.5A | 25V | SILICON | SWITCHING | 170W Tc | TO-220AB | 46A | 0.52Ohm | 560 mJ | 500V | N-Channel | 1235pF @ 25V | 520m Ω @ 5.75A, 10V | 5V @ 250μA | 11.5A Tc | 30nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| IRL3713STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irl3713strlpbf-datasheets-3021.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 2 | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 330W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 16 ns | 160ns | 57 ns | 40 ns | 260A | 20V | SILICON | DRAIN | SWITCHING | 330W Tc | 75A | 30V | N-Channel | 5890pF @ 15V | 3m Ω @ 38A, 10V | 2.5V @ 250μA | 260A Tc | 110nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPB180N04S4LH0ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb180n04s4lh0atma1-datasheets-4122.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | yes | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 180A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | 720A | 0.001Ohm | 850 mJ | N-Channel | 24440pF @ 25V | 1m Ω @ 100A, 10V | 2.2V @ 180μA | 180A Tc | 310nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S2H5ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-ipp80n06s2h5aksa2-datasheets-1908.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | 2 | 10 Weeks | 3 | yes | EAR99 | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | R-PSSO-G2 | 23 ns | 23ns | 22 ns | 48 ns | 80A | 20V | 55V | SILICON | DRAIN | 300W Tc | 0.0052Ohm | 700 mJ | 55V | N-Channel | 4400pF @ 25V | 5.2m Ω @ 80A, 10V | 4V @ 230μA | 80A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHP17N60D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihp17n60dge3-datasheets-4134.pdf | TO-220-3 | 3 | 13 Weeks | 6.000006g | 3 | No | SINGLE | 1 | 1 | FET General Purpose Powers | 22 ns | 56ns | 30 ns | 37 ns | 17A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 277.8W Tc | TO-220AB | 48A | 600V | N-Channel | 1780pF @ 100V | 340m Ω @ 8A, 10V | 5V @ 250μA | 17A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPA16N50C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-spa16n50c3xksa1-datasheets-4149.pdf | 560V | 16A | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 10 ns | 8ns | 50 ns | 16A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34W Tc | TO-220AB | 48A | 0.28Ohm | 460 mJ | N-Channel | 1600pF @ 25V | 280m Ω @ 10A, 10V | 3.9V @ 675μA | 16A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AOB2904 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTAT6H406NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-ntat6h406nt4g-datasheets-4043.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e6 | Tin/Bismuth (Sn/Bi) | NOT SPECIFIED | NOT SPECIFIED | 80V | 90W Tc | N-Channel | 8040pF @ 40V | 2.9m Ω @ 50A, 10V | 4V @ 1mA | 175A Ta | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD16408Q5C | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-csd16408q5c-datasheets-4045.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | No SVHC | 8 | NRND (Last Updated: 4 weeks ago) | 1mm | EAR99 | AVALANCHE RATED | Tin | e3 | DUAL | NO LEAD | 260 | CSD16408 | 8 | Single | NOT SPECIFIED | 3.1W | 1 | FET General Purpose Power | Not Qualified | 11.3 ns | 25ns | 10.8 ns | 11 ns | 113A | 16V | SILICON | DRAIN | SWITCHING | 1.8V | 3.1W Ta | 25V | N-Channel | 1300pF @ 12.5V | 1.8 V | 4.5m Ω @ 25A, 10V | 2.1V @ 250μA | 22A Ta 113A Tc | 8.9nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||
| SQM120N10-09_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n1009ge3-datasheets-3968.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 100V | 375W Tc | N-Channel | 8645pF @ 25V | 9.5mOhm @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL1404ZL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-auirl1404zstrl-datasheets-1832.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 3 | 16 Weeks | No SVHC | 5.9MOhm | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 200W | 1 | FET General Purpose Power | 19 ns | 180ns | 49 ns | 30 ns | 160A | 16V | SILICON | DRAIN | SWITCHING | 1.4V | 200W Tc | 790A | 490 mJ | 40V | N-Channel | 5080pF @ 25V | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 160A Tc | 110nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IXFY5N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfa5n50p3-datasheets-1424.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 26 Weeks | FET General Purpose Power | 5A | Single | 500V | 114W Tc | 5A | N-Channel | 370pF @ 25V | 1.65 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI120N04S401AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb120n04s401atma1-datasheets-6057.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 34 ns | 16ns | 36 ns | 41 ns | 120A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 188W Tc | 480A | 0.0019Ohm | 750 mJ | N-Channel | 14000pF @ 25V | 1.9m Ω @ 100A, 10V | 4V @ 140μA | 120A Tc | 176nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTB190N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-ntb190n65s3hf-datasheets-3982.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 162W Tc | N-Channel | 1610pF @ 400V | 190m Ω @ 10A, 10V | 5V @ 430μA | 20A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK5N100 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aok5n100-datasheets-4886.pdf | TO-247-3 | 18 Weeks | 4A | 1000V | 195W Tc | N-Channel | 1150pF @ 25V | 4.2 Ω @ 2.5A, 10V | 4.5V @ 250μA | 4A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3610STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf3610strlpbf-datasheets-3829.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 333W | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 103A | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 410A | 0.0116Ohm | 460 mJ | N-Channel | 5380pF @ 25V | 11.6m Ω @ 62A, 10V | 4V @ 250μA | 103A Tc | 150nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7748L1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf7748l1trpbf-datasheets-3954.pdf | DirectFET™ Isometric L6 | Lead Free | 12 Weeks | 13 | EAR99 | No | 3.3W | 1 | FET General Purpose Power | 19 ns | 104ns | 77 ns | 54 ns | 148A | 20V | Single | 60V | 3.3W Ta 94W Tc | N-Channel | 8075pF @ 50V | 2.2m Ω @ 89A, 10V | 4V @ 250μA | 28A Ta 148A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R520CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa50r520cpxksa1-datasheets-4010.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 66W Tc | TO-220AB | 7A | 31A | 0.52Ohm | 166 mJ | N-Channel | 680pF @ 100V | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 7.1A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8405TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfsl8405-datasheets-8942.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 40V | 163W Tc | 120A | N-Channel | 5193pF @ 25V | 2.3m Ω @ 100A, 10V | 3.9V @ 100μA | 120A Tc | 161nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK9A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.2nF | 25ns | 12 ns | 9A | 30V | 600V | 45W Tc | N-Channel | 1200pF @ 25V | 830mOhm @ 4.5A, 10V | 4V @ 1mA | 9A Ta | 24nC @ 10V | 830 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4833NAT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-PowerTDFN | 16 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | 1.1W | 150°C | FET General Purpose Powers | 191A | Single | 30V | N-Channel | 7500pF @ 12V | 1.9m Ω @ 30A, 10V | 2.5V @ 250μA | 16A Ta 191A Tc | 150nC @ 11.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK15A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $2.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 50W | 1 | TO-220SIS | 2.3nF | 50ns | 25 ns | 15A | 30V | 500V | 50W Tc | N-Channel | 2300pF @ 25V | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 15A Ta | 40nC @ 10V | 300 mΩ | 10V | ±30V |
