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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQA16N50-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 16A | 500V | 200W Tc | N-Channel | 3000pF @ 25V | 320m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP11N60N-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fcpf11n60nt-datasheets-3660.pdf | TO-220-3 Full Pack | 15 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 600V | 94W Tc | N-Channel | 1505pF @ 100V | 299m Ω @ 5.4A, 10V | 4V @ 250μA | 10.8A Tc | 35.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB240N03S4LR8ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb240n03s4lr8atma1-datasheets-4418.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 4.5mm | Contains Lead | 6 | 16 Weeks | yes | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 300W | 1 | 175°C | R-PSSO-G6 | 29 ns | 142 ns | 240A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 960A | 945 mJ | 30V | N-Channel | 26000pF @ 25V | 0.76m Ω @ 100A, 10V | 2.2V @ 230μA | 240A Tc | 380nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IXTA08N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixty08n100p-datasheets-5188.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 37ns | 34 ns | 35 ns | 800mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 42W Tc | 0.8A | 1.8A | 80 mJ | 1kV | N-Channel | 240pF @ 25V | 20 Ω @ 500mA, 10V | 4V @ 50μA | 800mA Tc | 11.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA48P05T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 50V | 150W Tc | P-Channel | 3660pF @ 25V | 30m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 53nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP125N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fcp125n65s3-datasheets-4431.pdf | TO-220-3 | 13 Weeks | ACTIVE (Last Updated: 6 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 181W Tc | N-Channel | 1940pF @ 400V | 125m Ω @ 12A, 10V | 4.5V @ 2.4mA | 24A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS6535TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfsl6535-datasheets-2914.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 300V | 210W Tc | 19A | N-Channel | 2340pF @ 25V | 185m Ω @ 11A, 10V | 5V @ 150μA | 19A Tc | 57nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S204ATMA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb100n04s204atma4-datasheets-4363.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 10 Weeks | 3 | yes | AVALANCHE RATED | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | R-PSSO-G2 | 27 ns | 46ns | 33 ns | 56 ns | 100A | 20V | 40V | SILICON | DRAIN | 300W Tc | 400A | 810 mJ | 40V | N-Channel | 5300pF @ 25V | 3.3m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 172nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB80N04S2H4ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb80n04s2h4atma2-datasheets-4370.pdf | TO-263-3 | 2 | 10 Weeks | 3 | yes | EAR99 | Tin | not_compliant | e3 | AEC-Q101 | Halogen Free | YES | 300W | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | R-PSSO-G2 | 4.4nF | 23 ns | 63ns | 22 ns | 46 ns | 80A | 20V | 40V | DRAIN | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 660 mJ | 40V | 3.7 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SQV120N06-4M7L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sqv120n064m7lge3-datasheets-4375.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 14.86mm | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 250W | 1 | 175°C | R-PSIP-T3 | 16 ns | 46 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 250W Tc | 300A | 0.0047Ohm | 320 mJ | 60V | N-Channel | 8800pF @ 25V | 4.7m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R190E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r190e6xksa1-datasheets-4376.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 34W Tc | TO-220AB | 59A | 0.19Ohm | 418 mJ | N-Channel | 1400pF @ 100V | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 20.2A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTP110N055T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp110n055t-datasheets-4382.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | R-PSFM-T3 | 30ns | 24 ns | 40 ns | 110A | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 300A | 0.007Ohm | 750 mJ | 55V | N-Channel | 3080pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 100μA | 110A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AOB1100L | Alpha & Omega Semiconductor Inc. | $3.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 130A | 100V | 2.1W Ta 500W Tc | N-Channel | 4833pF @ 25V | 11.7m Ω @ 20A, 10V | 3.8V @ 250μA | 8A Ta 130A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4H02NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4h02nt1g-datasheets-1495.pdf | 8-PowerTDFN | Lead Free | 5 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 193A | Single | 25V | 3.13W Ta 83W Tc | N-Channel | 2651pF @ 12V | 1.4m Ω @ 30A, 10V | 2.1V @ 250μA | 37A Ta 193A Tc | 38.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40N06-25L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 21 Weeks | 22mOhm | yes | EAR99 | 1.4W | GULL WING | 260 | 4 | Single | 40 | 1.4W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 9ns | 9 ns | 28 ns | 30A | 20V | SILICON | DRAIN | 100A | 60V | N-Channel | 1800pF @ 25V | 22m Ω @ 20A, 10V | 3V @ 250μA | 30A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIE812DF-T1-E3 | Vishay Siliconix | $9.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie812dft1ge3-datasheets-6819.pdf | 10-PolarPAK® (L) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | 14 Weeks | No SVHC | 2.6MOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 20 ns | 15ns | 10 ns | 60 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 5.2W Ta 125W Tc | 33A | 40V | N-Channel | 8300pF @ 20V | 2.6m Ω @ 25A, 10V | 3V @ 250μA | 60A Tc | 170nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| FDB3652-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb3652f085-datasheets-4334.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 14 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 150W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 85ns | 45 ns | 26 ns | 61A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | 9A | 0.016Ohm | 182 mJ | 100V | N-Channel | 2880pF @ 25V | 16m Ω @ 61A, 10V | 4V @ 250μA | 9A Ta 61A Tc | 53nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FCP16N60N-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fcp16n60n-datasheets-6848.pdf | TO-220-3 Full Pack | 12 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 600V | 134.4W Tc | N-Channel | 2170pF @ 100V | 199m Ω @ 8A, 10V | 4V @ 250μA | 16A Tc | 52.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA10N60P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | TO-263-3 | 30 Weeks | 2.299997g | 200W | 1 | 23 ns | 27ns | 21 ns | 21 ns | 10A | 30V | 600V | 740mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N50D2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 500V | 125W Tc | N-Channel | 1070pF @ 25V | 1.5 Ω @ 1.5A, 0V | 4.5V @ 250μA | 3A Tj | 40nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3801 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/sanken-2sk3801-datasheets-4347.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 70A | SILICON | SINGLE | 40V | 40V | 100W Tc | 140A | 6Ohm | 400 mJ | N-Channel | 5100pF @ 10V | 6m Ω @ 35A, 10V | 4V @ 1mA | 70A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR024 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3 | No | Single | 2.5W | 1 | D-Pak | 870pF | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | 60V | 2.5W Ta 42W Tc | 100mOhm | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP034N08N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp034n08n5aksa1-datasheets-4300.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 6.000006g | yes | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 18 ns | 12ns | 12 ns | 37 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 167W Tc | TO-220AB | 480A | 0.0034Ohm | 80V | N-Channel | 6240pF @ 40V | 3.4m Ω @ 100A, 10V | 3.8V @ 108μA | 120A Tc | 87nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTP120N04T2 | IXYS | $4.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp120n04t2-datasheets-4305.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 8ns | 11 ns | 16 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 360A | 0.0061Ohm | 400 mJ | 40V | N-Channel | 3240pF @ 25V | 6.1m Ω @ 25A, 10V | 4V @ 250μA | 120A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFS4321TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4321trlpbf-datasheets-3082.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 2 | 16 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 330W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 60ns | 35 ns | 25 ns | 83A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 75A | 0.015Ohm | 120 mJ | 150V | N-Channel | 4460pF @ 25V | 15m Ω @ 33A, 10V | 5V @ 250μA | 85A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA4N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 80W Tc | N-Channel | 455pF @ 25V | 850m Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 8.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3808STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf3808strlpbf-datasheets-5938.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 2 | 14 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 140ns | 120 ns | 68 ns | 106A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 75A | 550A | 0.007Ohm | 75V | N-Channel | 5310pF @ 25V | 7m Ω @ 82A, 10V | 4V @ 250μA | 106A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTU01N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixty01n80-datasheets-3285.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | yes | EAR99 | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | 12ns | 28 ns | 28 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 25W Tc | 0.1A | 0.4A | 800V | N-Channel | 60pF @ 25V | 50 Ω @ 100mA, 10V | 4.5V @ 25μA | 100mA Tc | 8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AOB2502L | Alpha & Omega Semiconductor Inc. | $1.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 150V | 277W Tc | N-Channel | 3010pF @ 75V | 10.7m Ω @ 20A, 10V | 5.1V @ 250μA | 106A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1N120PTRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1200V | 63W Tc | N-Channel | 445pF @ 25V | 20 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 17.6nC @ 10V | 10V | ±30V |
