Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SUM110N04-04-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0404e3-datasheets-4270.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 6 Weeks | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 115ns | 85 ns | 75 ns | 110A | 20V | SILICON | SWITCHING | 3.75W Ta 250W Tc | 350A | 0.0035Ohm | 40V | N-Channel | 6800pF @ 25V | 3.5m Ω @ 30A, 10V | 4V @ 250μA | 110A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTP4N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 80W Tc | N-Channel | 455pF @ 25V | 850m Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 8.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI60R190C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi60r190c6xksa1-datasheets-4282.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 151W Tc | 20.2A | 59A | 0.19Ohm | 418 mJ | N-Channel | 1400pF @ 100V | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 20.2A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFA12N50P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 500V | 200W Tc | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 1mA | 12A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL2910STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl2910strlpbf-datasheets-9108.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 55A | 190A | 0.03Ohm | 520 mJ | N-Channel | 3700pF @ 25V | 26m Ω @ 29A, 10V | 2V @ 250μA | 55A Tc | 140nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||
| IPC218N04N3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipc218n04n3x1sa1-datasheets-4249.pdf | Die | 18 Weeks | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 0.05Ohm | N-Channel | 50m Ω @ 2A, 10V | 4V @ 200μA | 2A Tj | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N04S303AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipb100n04s303atma1-datasheets-7086.pdf | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 214W | 1 | 30 ns | 16ns | 17 ns | 46 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 214W Tc | TO-220AB | 400A | 0.0028Ohm | 898 mJ | N-Channel | 9600pF @ 25V | 2.8m Ω @ 80A, 10V | 4V @ 150μA | 100A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF840LCSTRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf840lclpbf-datasheets-5874.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 12 Weeks | 1.437803g | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Power | S-PSSO-G2 | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 3.1W Ta 125W Tc | 8A | 0.85Ohm | N-Channel | 1100pF @ 25V | 850m Ω @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTA70N075T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp70n075t2-datasheets-3818.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 12MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 28ns | 22 ns | 31 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | 180A | 300 mJ | 75V | N-Channel | 2725pF @ 25V | 12m Ω @ 25A, 10V | 4V @ 250μA | 70A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFA12N65X2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 650V | 180W Tc | N-Channel | 1134pF @ 25V | 310m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 18.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU01N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixty01n80-datasheets-3285.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | yes | EAR99 | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | 12ns | 28 ns | 28 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 25W Tc | 0.1A | 0.4A | 800V | N-Channel | 60pF @ 25V | 50 Ω @ 100mA, 10V | 4.5V @ 25μA | 100mA Tc | 8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AOB2502L | Alpha & Omega Semiconductor Inc. | $1.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 150V | 277W Tc | N-Channel | 3010pF @ 75V | 10.7m Ω @ 20A, 10V | 5.1V @ 250μA | 106A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1N120PTRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1200V | 63W Tc | N-Channel | 445pF @ 25V | 20 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 17.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL1404Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirl1404zstrl-datasheets-1832.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | Lead Free | 3 | 16 Weeks | No SVHC | 5.9MOhm | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | Single | 200W | 1 | FET General Purpose Power | 19 ns | 180ns | 49 ns | 30 ns | 160A | 16V | SILICON | DRAIN | SWITCHING | 1.4V | 200W Tc | TO-220AB | 790A | 490 mJ | 40V | N-Channel | 5080pF @ 25V | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 160A Tc | 110nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
| IXTP110N055T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta110n055t2-datasheets-3951.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | R-PSFM-T3 | 25ns | 23 ns | 40 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-220AB | 300A | 0.0066Ohm | 400 mJ | 55V | N-Channel | 3060pF @ 25V | 6.6m Ω @ 25A, 10V | 4V @ 250μA | 110A Tc | 57nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFS7730TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7730pbf-datasheets-3733.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3.949996g | 3 | EAR99 | GULL WING | 1 | Single | 1 | R-PSSO-G2 | 21 ns | 120ns | 115 ns | 180 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 75V | 75V | 375W Tc | 984A | 0.0026Ohm | 898 mJ | N-Channel | 13660pF @ 25V | 2.6m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 407nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI4368DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4368dyt1e3-datasheets-9508.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | 25 ns | 20ns | 41 ns | 172 ns | 17A | 12V | SILICON | SWITCHING | 30V | 30V | 1.6W Ta | 0.0032Ohm | N-Channel | 8340pF @ 15V | 3.2m Ω @ 25A, 10V | 1.8V @ 250μA | 17A Ta | 80nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| NTMFS6H800NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs6h800nlt1g-datasheets-4237.pdf | 8-PowerTDFN, 5 Leads | 18 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.9W Ta 214W Tc | N-Channel | 6900pF @ 40V | 1.9m Ω @ 50A, 10V | 2V @ 330μA | 30A Ta 224A Tc | 112nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP5N50P3 | IXYS | $6.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfa5n50p3-datasheets-1424.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 24 Weeks | 3 | Single | FET General Purpose Power | 14 ns | 28 ns | 5A | 30V | 500V | 114W Tc | 5A | N-Channel | 370pF @ 25V | 1.65 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8350LET40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms8350let40-datasheets-4155.pdf | 8-PowerTDFN | 12 Weeks | 56.5mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 300A | 40V | 3.33W Ta 125W Tc | N-Channel | 16590pF @ 20V | 0.85m Ω @ 47A, 10V | 3V @ 250μA | 49A Ta 300A Tc | 219nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R7-100BSEJ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/nexperiausainc-psmn3r7100bsej-datasheets-4247.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 100V | 405W Ta | N-Channel | 16370pF @ 50V | 3.95m Ω @ 25A, 10V | 4V @ 1mA | 120A Ta | 246nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA42N15T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 150V | 200W Tc | N-Channel | 1880pF @ 25V | 45m Ω @ 21A, 10V | 4.5V @ 250μA | 42A Tc | 21nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R145CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r145cfd7atma1-datasheets-4248.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 83W Tc | N-Channel | 1503pF @ 400V | 125m Ω @ 7.8A, 10V | 4.5V @ 390μA | 18A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA220N04T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 40V | 360W Tc | N-Channel | 6820pF @ 25V | 3.5m Ω @ 50A, 10V | 4V @ 250μA | 220A Tc | 112nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW25S65 | Alpha & Omega Semiconductor Inc. | $1.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | 25A | 650V | 357W Tc | N-Channel | 1278pF @ 100V | 190m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 26.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR7843PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-irlr7843trpbf-datasheets-7587.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | 30V | 140W Tc | N-Channel | 4380pF @ 15V | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 161A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF25S65 | Alpha & Omega Semiconductor Inc. | $15.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 16 Weeks | 25A | 650V | 28W Tc | N-Channel | 1278pF @ 100V | 190m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 26.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK9A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $6.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.05nF | 25ns | 10 ns | 8.5A | 30V | 550V | 40W Tc | N-Channel | 1050pF @ 25V | 860mOhm @ 4.3A, 10V | 4V @ 1mA | 8.5A Ta | 20nC @ 10V | 860 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP17N60D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp17n60dge3-datasheets-4134.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | 3 | No | 3 | 1 | Single | 1 | FET General Purpose Powers | 22 ns | 56ns | 30 ns | 37 ns | 17A | 30V | SILICON | 600V | 600V | 277.8W Tc | TO-220AB | 48A | N-Channel | 1780pF @ 100V | 340m Ω @ 8A, 10V | 5V @ 250μA | 17A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTA90N055T2 | IXYS | $2.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp90n055t2-datasheets-3301.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 21ns | 19 ns | 39 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | 230A | 0.0084Ohm | 300 mJ | 55V | N-Channel | 2770pF @ 25V | 8.4m Ω @ 25A, 10V | 4V @ 250μA | 90A Tc | 42nC @ 10V | 10V | ±20V |
