Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTMFS4833NAT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-PowerTDFN | 16 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | 1.1W | 150°C | FET General Purpose Powers | 191A | Single | 30V | N-Channel | 7500pF @ 12V | 1.9m Ω @ 30A, 10V | 2.5V @ 250μA | 16A Ta 191A Tc | 150nC @ 11.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK15A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $2.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 50W | 1 | TO-220SIS | 2.3nF | 50ns | 25 ns | 15A | 30V | 500V | 50W Tc | N-Channel | 2300pF @ 25V | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 15A Ta | 40nC @ 10V | 300 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI120N06S402AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipi120n06s402aksa2-datasheets-4027.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 16 Weeks | 2.387001g | 3 | yes | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 25 ns | 5ns | 10 ns | 50 ns | 120A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 188W Tc | 480A | 0.0028Ohm | 560 mJ | N-Channel | 15750pF @ 25V | 2.8m Ω @ 100A, 10V | 4V @ 140μA | 120A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI90N06S4L04AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb90n06s4l04atma2-datasheets-9134.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 16 Weeks | 3 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 90A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | N-Channel | 13000pF @ 25V | 3.7m Ω @ 90A, 10V | 2.2V @ 90μA | 90A Tc | 170nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17559Q5T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 12 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | 1mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD17559 | Single | NOT SPECIFIED | 1 | 20 ns | 41ns | 14 ns | 32 ns | 257A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.2W Ta 96W Tc | 40A | 400A | 0.0015Ohm | 113 pF | 541 mJ | N-Channel | 9200pF @ 15V | 1.15m Ω @ 40A, 10V | 1.7V @ 250μA | 100A Ta | 51nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP65R310CFDAAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r310cfdaatma1-datasheets-9600.pdf | TO-220-3 | Contains Lead | 3 | 16 Weeks | 3 | no | HIGH RELIABILITY | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 11 ns | 7.5ns | 7 ns | 45 ns | 11.4A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 104.2W Tc | TO-220AB | 290 mJ | N-Channel | 1110pF @ 100V | 310m Ω @ 4.4A, 10V | 4.5V @ 440μA | 11.4A Tc | 41nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB180P04P403ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-ipb180p04p403atma1-datasheets-3899.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10mm | 4.4mm | 9.25mm | Contains Lead | 6 | 14 Weeks | 7 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 150W | 1 | R-PSSO-G6 | 48 ns | 31ns | 81 ns | 72 ns | 180A | 20V | -40V | SILICON | DRAIN | 40V | 150W Tc | 0.0028Ohm | 90 mJ | -40V | P-Channel | 17640pF @ 25V | 2.8m Ω @ 100A, 10V | 4V @ 410μA | 180A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPA60R180C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r180c7xksa1-datasheets-3906.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 9A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 29W Tc | TO-220AB | 9A | 45A | 0.18Ohm | 53 mJ | N-Channel | 1080pF @ 400V | 180m Ω @ 5.3A, 10V | 4V @ 260μA | 9A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N06S4H1ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipp120n06s4h1aksa2-datasheets-1522.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | yes | EAR99 | GREEN | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 260 | 1 | NOT SPECIFIED | 1 | R-PSSO-G2 | 30 ns | 5ns | 15 ns | 60 ns | 120A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | 480A | 60V | N-Channel | 21900pF @ 25V | 2.4m Ω @ 100A, 10V | 4V @ 200μA | 120A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TSM80N1R2CL C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm80n1r2clc0g-datasheets-3916.pdf | TO-262-3 Short Leads, I2Pak | 3 | 16 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 110W Tc | TO-262AA | 5.5A | 16.5A | 121 mJ | N-Channel | 685pF @ 100V | 1.2 Ω @ 1.8A, 10V | 4V @ 250μA | 5.5A Tc | 19.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI076N12N3GAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi076n12n3gaksa1-datasheets-3918.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 18 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 188W | 1 | Not Qualified | R-PSIP-T3 | 24 ns | 50ns | 10 ns | 39 ns | 100A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 188W Tc | 400A | 0.0076Ohm | 230 mJ | N-Channel | 6640pF @ 60V | 7.6m Ω @ 100A, 10V | 4V @ 130μA | 100A Tc | 101nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPB80N08S207ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipi80n08s207aksa1-datasheets-8578.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 10 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 26 ns | 50ns | 30 ns | 61 ns | 80A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 0.0071Ohm | 810 mJ | N-Channel | 4700pF @ 25V | 7.1m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AUIRFB8407 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/infineontechnologies-auirfsl8407-datasheets-1206.pdf | TO-220-3 | 10.67mm | 9.02mm | 3.43mm | Lead Free | 16 Weeks | No SVHC | 3 | EAR99 | No | 1 | Single | 230W | FET General Purpose Power | 19 ns | 70ns | 53 ns | 78 ns | 195A | 20V | 40V | 3V | 230W Tc | N-Channel | 7330pF @ 25V | 3 V | 2m Ω @ 100A, 10V | 4V @ 150μA | 195A Tc | 225nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60W,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 52 Weeks | TO-220 | 600V | 30W Tc | N-Channel | 720pF @ 300V | 380mOhm @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R3-80ES,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn3r380es127-datasheets-3936.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 20 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 338W | 1 | 41 ns | 43ns | 44 ns | 109 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 338W Tc | 676 mJ | 80V | N-Channel | 9961pF @ 40V | 3.3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 139nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA200N055T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 55V | 360W Tc | N-Channel | 6970pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 200A Tc | 109nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2420 | Sanken | $17.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/sanken-2sk2420-datasheets-3939.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | yes | EAR99 | UL APPROVED | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 30A | SILICON | SINGLE | ISOLATED | 60V | 60V | 40W Tc | TO-220AB | 120A | 0.028Ohm | 38 mJ | N-Channel | 2200pF @ 25V | 28m Ω @ 15A, 10V | 4V @ 250μA | 30A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK5Q60W,S1VQ | Toshiba Semiconductor and Storage | $9.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-251-3 Stub Leads, IPak | 16 Weeks | 900mOhm | 3 | Single | 18ns | 7 ns | 50 ns | 5.4A | 30V | 600V | 60W Tc | N-Channel | 380pF @ 300V | 900m Ω @ 2.7A, 10V | 3.7V @ 270μA | 5.4A Ta | 10.5nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R5011ANJTL | ROHM Semiconductor | $4.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | yes | No | e2 | Tin/Copper (Sn/Cu) | SINGLE | GULL WING | 260 | 3 | 1 | 10 | 1 | FET General Purpose Power | R-PSSO-G2 | 26 ns | 28ns | 30 ns | 75 ns | 11A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 75W Tc | 44A | 0.5Ohm | 500V | N-Channel | 1000pF @ 25V | 500m Ω @ 5.5A, 10V | 4.5V @ 1mA | 11A Ta | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| BSC021N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™, StrongIRFET™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 39 Weeks | 80V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR120TR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 13 Weeks | 270mOhm | 3 | no | EAR99 | AVALANCHE RATED | No | GULL WING | 240 | 3 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 210 mJ | 100V | N-Channel | 490pF @ 25V | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTA4N80P | IXYS | $7.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n80p-datasheets-1592.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 29 ns | 60 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 100W Tc | 8A | 250 mJ | 800V | N-Channel | 750pF @ 25V | 3.4 Ω @ 500mA, 10V | 5.5V @ 100μA | 3.6A Tc | 14.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SKP253 | Sanken | $13.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-skp253-datasheets-3851.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 20A | SILICON | SINGLE | SWITCHING | 250V | 250V | 40W Tc | 80A | 0.095Ohm | 160 mJ | N-Channel | 1600pF @ 25V | 95m Ω @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP1N100P | IXYS | $2.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n100p-datasheets-1536.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 26ns | 24 ns | 55 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 50W Tc | TO-220AB | 1A | 1.8A | 100 mJ | 1kV | N-Channel | 331pF @ 25V | 15 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 15.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQM120N04-1M9_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n041m9ge3-datasheets-3853.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 40V | 300W Tc | N-Channel | 8790pF @ 25V | 1.9mOhm @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA034N08NM5SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 7 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ48NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | /files/infineontechnologies-irfiz48npbf-datasheets-3857.pdf | 55V | 36A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 42W | 1 | 11 ns | 78ns | 48 ns | 32 ns | 36A | 20V | SILICON | ISOLATED | SWITCHING | 54W Tc | TO-220AB | 140 ns | 40A | 270 mJ | 55V | N-Channel | 1900pF @ 25V | 4 V | 16m Ω @ 22A, 10V | 4V @ 250μA | 40A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTMFS4933NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntmfs4933nt3g-datasheets-3867.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 2.74W | 1 | FET General Purpose Power | 31 ns | 33ns | 23 ns | 47 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 1.06W Ta 104W Tc | 20A | 0.002Ohm | 30V | N-Channel | 10930pF @ 15V | 1.2m Ω @ 30A, 10V | 2.2V @ 250μA | 20A Ta 210A Tc | 62.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTY1N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty1n80p-datasheets-3869.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | Pure Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 42W Tc | 1A | 2A | 75 mJ | N-Channel | 250pF @ 25V | 14 Ω @ 500mA, 10V | 4V @ 50μA | 1A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFS38N20DTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb38n20dpbf-datasheets-2918.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 52 Weeks | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.8W Ta 300W Tc | 43A | 180A | 0.054Ohm | 460 mJ | N-Channel | 2900pF @ 25V | 54m Ω @ 26A, 10V | 5V @ 250μA | 43A Tc | 91nC @ 10V | 10V | ±20V |
