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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4862DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4862dyt1e3-datasheets-3887.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.6W | 1 | FET General Purpose Power | 42 ns | 38ns | 38 ns | 120 ns | 17A | 8V | SILICON | SWITCHING | 1.6W Ta | 0.0033Ohm | 16V | N-Channel | 3.3m Ω @ 25A, 4.5V | 600mV @ 250μA (Min) | 17A Ta | 70nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| IPB80N04S204ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb80n04s204atma2-datasheets-3837.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 26 ns | 45ns | 32 ns | 56 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 810 mJ | N-Channel | 5300pF @ 25V | 3.4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC021N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™, StrongIRFET™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 39 Weeks | 80V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR120TR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 13 Weeks | 270mOhm | 3 | no | EAR99 | AVALANCHE RATED | No | GULL WING | 240 | 3 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 210 mJ | 100V | N-Channel | 490pF @ 25V | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| IXTA4N80P | IXYS | $7.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n80p-datasheets-1592.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 29 ns | 60 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 100W Tc | 8A | 250 mJ | 800V | N-Channel | 750pF @ 25V | 3.4 Ω @ 500mA, 10V | 5.5V @ 100μA | 3.6A Tc | 14.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SIHF540STRL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf540spbf-datasheets-3481.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 3.7W Ta 150W Tc | N-Channel | 1700pF @ 25V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1010EZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1010ezstrl-datasheets-3768.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.3472mm | 2 | 16 Weeks | 3 | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PDSO-G2 | 19 ns | 90ns | 54 ns | 38 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 140W Tc | 0.0085Ohm | 60V | N-Channel | 2810pF @ 25V | 8.5m Ω @ 51A, 10V | 4V @ 250μA | 75A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AUIRFB4610 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-auirfb4610-datasheets-3776.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 11 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | Single | 190W | 1 | FET General Purpose Power | 18 ns | 87ns | 70 ns | 53 ns | 73A | 20V | SILICON | DRAIN | SWITCHING | 2V | 190W Tc | TO-220AB | 290A | 100V | N-Channel | 3550pF @ 50V | 2 V | 14m Ω @ 44A, 10V | 4V @ 100μA | 73A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| DMJ65H650SCTI | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj65h650scti-datasheets-3782.pdf | TO-220-3 Full Pack, Isolated Tab | 16 Weeks | not_compliant | e3 | Matte Tin (Sn) | 650V | 31W Tc | N-Channel | 639pF @ 100V | 600m Ω @ 2.4A, 10V | 4V @ 250μA | 10A Tc | 12.9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFB11N50A-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb11n50apbf-datasheets-1825.pdf | TO-220-3 | 3 | 3 | yes | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 1 | FET General Purpose Power | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 170W Tc | TO-220AB | 44A | 0.52Ohm | 275 mJ | N-Channel | 1423pF @ 25V | 520m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TK6A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.05nF | 25ns | 10 ns | 6A | 30V | 650V | 45W Tc | N-Channel | 1050pF @ 25V | 1.11Ohm @ 3A, 10V | 4V @ 1mA | 6A Ta | 20nC @ 10V | 1.11 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7534TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7534pbf-datasheets-3931.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 134ns | 93 ns | 118 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 3.7V | 294W Tc | 944A | 0.0024Ohm | 775 mJ | 60V | N-Channel | 10034pF @ 25V | 2.4m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 279nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPB120N06S402ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb120n06s402atma2-datasheets-3797.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | 2 | 16 Weeks | 1.946308g | 3 | yes | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 188W | 1 | R-PSSO-G2 | 25 ns | 5ns | 10 ns | 50 ns | 120A | 20V | 60V | SILICON | DRAIN | 188W Tc | 480A | 0.0024Ohm | 560 mJ | 60V | N-Channel | 15750pF @ 25V | 2.8m Ω @ 100A, 10V | 4V @ 140μA | 120A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTMFS10N7D2C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs10n7d2c-datasheets-3803.pdf | 8-PowerTDFN | 20 Weeks | 68.1mg | ACTIVE (Last Updated: 3 days ago) | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 100V | 83W Tc | N-Channel | 2635pF @ 50V | 7.2m Ω @ 28A, 10V | 4V @ 150μA | 78A Tc | 37nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1404ZL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1404z-datasheets-3786.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | Single | 200W | 1 | FET General Purpose Power | 18 ns | 110ns | 58 ns | 36 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 2V | 200W Tc | 480 mJ | 40V | N-Channel | 4340pF @ 25V | 3.7m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB100N04S2L03ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb100n04s2l03atma2-datasheets-3816.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 31 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | R-PSSO-G2 | 19 ns | 51ns | 27 ns | 77 ns | 100A | 20V | 40V | SILICON | DRAIN | 300W Tc | 400A | 810 mJ | 40V | N-Channel | 6000pF @ 25V | 3m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 230nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AOT282L | Alpha & Omega Semiconductor Inc. | $1.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot282l-datasheets-4786.pdf | TO-220-3 | 18 Weeks | 105A | 80V | 2.1W Ta 272.5W Tc | N-Channel | 7765pF @ 40V | 3.5m Ω @ 20A, 10V | 3.5V @ 250μA | 18.5A Ta 105A Tc | 178nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB160N08S403ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb160n08s403atma1-datasheets-3823.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 14 Weeks | 7 | Halogen Free | PG-TO263-7-3 | 7.75nF | 18 ns | 11ns | 38 ns | 30 ns | 160A | 20V | 80V | 80V | 208W Tc | N-Channel | 7750pF @ 25V | 3.2mOhm @ 100A, 10V | 4V @ 150μA | 160A Tc | 112nC @ 10V | 3.2 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3800VL | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/sanken-2sk3800-datasheets-3593.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | unknown | 70A | 40V | 80W Tc | N-Channel | 5100pF @ 10V | 6m Ω @ 35A, 10V | 4V @ 1mA | 70A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB260L | Alpha & Omega Semiconductor Inc. | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 330W | 1 | FET General Purpose Power | 140A | 20V | Single | 60V | 1.9W Ta 330W Tc | N-Channel | 14200pF @ 30V | 2.2m Ω @ 20A, 10V | 3.2V @ 250μA | 20A Ta 140A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP04N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp04n60c3xksa1-datasheets-3755.pdf | 650V | 4.5A | TO-220-3 | Lead Free | 8 Weeks | 3 | No | Halogen Free | Single | 50W | 1 | PG-TO220-3 | 490pF | 6 ns | 2.5ns | 9.5 ns | 58.5 ns | 4.5A | 20V | 600V | 600V | 50W Tc | 850mOhm | N-Channel | 490pF @ 25V | 950mOhm @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 25nC @ 10V | 950 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8403TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfsl8403-datasheets-8156.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 40V | 99W Tc | 123A | N-Channel | 3183pF @ 25V | 3.3m Ω @ 70A, 10V | 3.9V @ 100μA | 123A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP9N60N-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 12 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 600V | 83.3W Tc | N-Channel | 1240pF @ 100V | 385m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1404ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1404z-datasheets-3786.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 110ns | 58 ns | 36 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 2V | 200W Tc | 480 mJ | 40V | N-Channel | 4340pF @ 25V | 3.7m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NVMFS6H800NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | /files/onsemiconductor-nvmfs6h800nt1g-datasheets-6570.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.8W Ta 200W Tc | N-Channel | 5530pF @ 40V | 2.1m Ω @ 50A, 10V | 4V @ 330μA | 28A Ta 203A Tc | 85nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7Q60W,S1VQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-251-3 Stub Leads, IPak | 16 Weeks | 3.949996g | 3 | No | 1 | Single | I-PAK | 490pF | 40 ns | 18ns | 7 ns | 55 ns | 7A | 30V | 600V | 60W Tc | 500mOhm | N-Channel | 490pF @ 300V | 600mOhm @ 3.5A, 10V | 3.7V @ 350μA | 7A Ta | 15nC @ 10V | 600 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP18N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp18n60ege3-datasheets-3685.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 179W Tc | N-Channel | 1640pF @ 100V | 202mOhm @ 9A, 10V | 4V @ 250μA | 18A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD25N15-52-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud25n1552e3-datasheets-9329.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252, (D-Pak) | 1.725nF | 25A | 150V | 3W Ta 136W Tc | N-Channel | 1725pF @ 25V | 52mOhm @ 5A, 10V | 4V @ 250μA | 25A Tc | 40nC @ 10V | 52 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF9N60NTYDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcp9n60n-datasheets-9296.pdf | TO-220-3 Full Pack, Formed Leads | 12 Weeks | 2.565g | ACTIVE (Last Updated: 3 weeks ago) | yes | Single | 9A | 600V | 29.8W Tc | N-Channel | 1240pF @ 100V | 385m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R160P6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r160p6xksa1-datasheets-1896.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 23.8A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 176W Tc | 68A | 0.16Ohm | 497 mJ | N-Channel | 2080pF @ 100V | 160m Ω @ 9A, 10V | 4.5V @ 750μA | 23.8A Tc | 44nC @ 10V | 10V | ±20V |
