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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFP8N85X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfa8n85xhv-datasheets-3817.pdf | TO-220-3 | 19 Weeks | compliant | 850V | 200W Tc | N-Channel | 654pF @ 25V | 850m Ω @ 4A, 10V | 5.5V @ 250μA | 8A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP024N06N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp024n06n3gxksa1-datasheets-2413.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 41 ns | 79 ns | 120A | 20V | 60V | SILICON | SWITCHING | 250W Tc | TO-220AB | 480A | 0.0024Ohm | 60V | N-Channel | 23000pF @ 30V | 2.4m Ω @ 100A, 10V | 4V @ 196μA | 120A Tc | 275nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDB9503L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/onsemiconductor-fdb9503lf085-datasheets-2419.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 52 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 333W Tj | 110A | 0.0026Ohm | 984 mJ | P-Channel | 8320pF @ 20V | 2.6m Ω @ 80A, 10V | 3V @ 250μA | 110A Tc | 255nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTP15P15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixty15p15t-datasheets-2144.pdf | TO-220-3 | 3 | 24 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 150W Tc | TO-220AB | 45A | 0.24Ohm | 300 mJ | P-Channel | 3650pF @ 25V | 240m Ω @ 7A, 10V | 4.5V @ 250μA | 15A Tc | 48nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| SUM52N20-39P-E3 | Vishay Siliconix | $5.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum52n2039pe3-datasheets-2425.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 6 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 170ns | 9 ns | 34 ns | 52A | 25V | 200V | SILICON | 4.5V | 3.12W Ta 250W Tc | 133 ns | 0.094Ohm | 200V | N-Channel | 4220pF @ 25V | 4.5 V | 38m Ω @ 20A, 15V | 4.5V @ 250μA | 52A Tc | 185nC @ 15V | 10V 15V | ±25V | ||||||||||||||||||||||||||||||
| FDI038AN06A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp038an06a0-datasheets-3810.pdf | 60V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 9 Weeks | 2.084g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 17 ns | 144ns | 60 ns | 34 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 310W Tc | TO-262AB | 0.0038Ohm | 625 mJ | 60V | N-Channel | 6400pF @ 25V | 3.8m Ω @ 80A, 10V | 4V @ 250μA | 17A Ta 80A Tc | 124nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| TK16A60W5,S4VX | Toshiba Semiconductor and Storage | $2.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 1.35nF | 16 Weeks | Single | 40W | 15.8A | 40W Tc | 600V | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 1.5mA | 15.8A Ta | 43nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC302N10N3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc302n10n3x1sa1-datasheets-2434.pdf | Die | 18 Weeks | EAR99 | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 3.5V @ 302μA | 1A Tj | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA90N075T2 | IXYS | $2.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixta90n075t2-datasheets-2435.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 28ns | 20 ns | 35 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 225A | 0.01Ohm | 400 mJ | 75V | N-Channel | 3290pF @ 25V | 10m Ω @ 25A, 10V | 4V @ 250μA | 90A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFA8N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 650V | 150W Ta | N-Channel | 790pF @ 25V | 450m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP14N60PM | IXYS | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp14n60pm-datasheets-2437.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 24 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 75W Tc | TO-220AB | 7A | 42A | 0.55Ohm | 900 mJ | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 250μA | 7A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHF22N65E-GE3 | Vishay Siliconix | $17.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf22n65ege3-datasheets-2438.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | Unknown | 3 | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 227W | 1 | 33ns | 38 ns | 73 ns | 22A | 4V | 35W Tc | 650V | N-Channel | 2415pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA12N50P | IXYS | $3.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp12n50p-datasheets-2268.pdf | 500V | 12A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 20 ns | 55 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 0.5Ohm | 600 mJ | 500V | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 250μA | 12A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IPP023N08N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp023n08n5aksa1-datasheets-2403.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 6.000006g | yes | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 28 ns | 16ns | 20 ns | 62 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 480A | 0.0023Ohm | 674 mJ | N-Channel | 12100pF @ 40V | 2.3m Ω @ 100A, 10V | 3.8V @ 208μA | 120A Tc | 166nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPA15N60CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-spa15n60cfdxksa1-datasheets-2360.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 34W | 1 | Not Qualified | 43 ns | 24ns | 5 ns | 47 ns | 13.4A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 34W Tc | TO-220AB | 460 mJ | N-Channel | 1820pF @ 25V | 330m Ω @ 9.4A, 10V | 5V @ 750μA | 13.4A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TK16A60W,S4VX | Toshiba Semiconductor and Storage | $2.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-220-3 Full Pack | 1.35nF | 16 Weeks | 40W | 25ns | 5 ns | 100 ns | 15.8A | 30V | 40W Tc | 600V | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS6B05NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs6b05nt1g-datasheets-0716.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | 1 | 104A | 100V | 3.3W Ta 138W Tc | N-Channel | 3100pF @ 50V | 8m Ω @ 20A, 10V | 4V @ 250μA | 16A Ta 104A Tc | 44nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY08N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | TO-220AB | 8A | 1200V | N-Channel | 8A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC302N08N3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc302n08n3x1sa1-datasheets-2378.pdf | Die | Lead Free | 18 Weeks | EAR99 | Halogen Free | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 80V | 80V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 3.5V @ 270μA | 1A Tj | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP26P10T | IXYS | $1.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty26p10t-datasheets-9365.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 150W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 15ns | 1 ns | 37 ns | 26A | 15V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 80A | 0.09Ohm | 300 mJ | 100V | P-Channel | 3820pF @ 25V | 90m Ω @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||
| IXTP170N075T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta170n075t2-datasheets-2178.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 11ns | 19 ns | 25 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 510A | 0.0054Ohm | 600 mJ | 75V | N-Channel | 6860pF @ 25V | 5.4m Ω @ 50A, 10V | 4V @ 250μA | 170A Tc | 109nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHB22N60ET5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60ee3-datasheets-1845.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 600V | 227W Tc | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP130N065T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n065t2-datasheets-2316.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65V | 65V | 250W Tc | TO-220AB | 330A | 0.0066Ohm | 600 mJ | N-Channel | 4800pF @ 25V | 6.6m Ω @ 50A, 10V | 4V @ 250μA | 130A Tc | 79nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTP270N04T4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixth270n04t4-datasheets-0011.pdf | TO-220-3 | 24 Weeks | 270A | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.4m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP120N075T2 | IXYS | $15.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta120n075t2-datasheets-2352.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 250W Tc | TO-220AB | 300A | 0.0077Ohm | 600 mJ | N-Channel | 4740pF @ 25V | 7.7m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPB024N10N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb024n10n5atma1-datasheets-2391.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 6 | 13 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 250W Tc | 180A | 720A | 0.0024Ohm | 502 mJ | N-Channel | 10200pF @ 50V | 2.4m Ω @ 90A, 10V | 3.8V @ 183μA | 180A Tc | 138nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDP2710-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp2710f085-datasheets-2395.pdf | TO-220-3 | 3 | 2 Weeks | 1.8g | ACTIVE (Last Updated: 1 week ago) | yes | No | Single | 403W | 1 | FET General Purpose Power | R-PSFM-T3 | 80 ns | 252ns | 154 ns | 112 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 403W Tc | TO-220AB | 4A | 0.047Ohm | 483 mJ | 250V | N-Channel | 5690pF @ 25V | 47m Ω @ 50A, 10V | 5V @ 250μA | 4A Ta | 101nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFA76N15T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 150V | 350W Tc | N-Channel | 5800pF @ 25V | 22m Ω @ 38A, 10V | 4.5V @ 250μA | 76A Tc | 97nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK14A45D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 14A | 450V | N-Channel | 340mOhm @ 7A, 10V | 14A | 340 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N04-03P-E3 | Vishay Siliconix | $9.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0403pe3-datasheets-2358.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | TO-263 (D2Pak) | 6.5nF | 110A | 40V | 3.75W Ta 375W Tc | N-Channel | 6500pF @ 25V | 3.1mOhm @ 30A, 10V | 4V @ 250μA | 110A Tc | 150nC @ 10V | 3.1 mΩ | 10V | ±20V |
