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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTQ56N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 56A | 150V | N-Channel | 56A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA21N65EF-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha21n65efe3-datasheets-2333.pdf | TO-220-3 Full Pack | 21 Weeks | TO-220 Full Pack | 2.322nF | 21A | 650V | 35W Tc | N-Channel | 2322pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 106nC @ 10V | 180 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB024N04AL7 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb024n04al7-datasheets-2337.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.8mm | 9.4mm | 4.3mm | 6 | 16 Weeks | 1.312g | No SVHC | 7 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | GULL WING | Single | 214W | 1 | FET General Purpose Power | R-PSSO-G6 | 17 ns | 8ns | 17 ns | 71 ns | 219A | 20V | SILICON | DRAIN | SWITCHING | 1V | 214W Tc | 0.0024Ohm | 864 mJ | 40V | N-Channel | 7300pF @ 25V | 2.4m Ω @ 80A, 10V | 3V @ 250μA | 100A Tc | 109nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTP230N04T4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Through Hole | -55°C~175°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixta230n04t4-datasheets-2098.pdf | TO-220-3 | 24 Weeks | compliant | 40V | 340W Tc | N-Channel | 7400pF @ 25V | 2.9m Ω @ 115A, 10V | 4V @ 250μA | 230A Tc | 140nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1324 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-auirf1324-datasheets-2344.pdf | TO-220-3 | 10.6426mm | 16.51mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | Single | 300W | 1 | FET General Purpose Power | 17 ns | 190ns | 120 ns | 83 ns | 195A | 20V | SILICON | SWITCHING | 2V | 300W Tc | TO-220AB | 270 mJ | 24V | N-Channel | 7590pF @ 24V | 1.5m Ω @ 195A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTY10P15T | IXYS | $3.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp10p15t-datasheets-2123.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | 4 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 83W Tc | TO-252AA | 30A | 0.35Ohm | 200 mJ | P-Channel | 2210pF @ 25V | 350m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 36nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||
| IXTA120N075T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta120n075t2-datasheets-2352.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 250W Tc | 300A | 0.0077Ohm | 600 mJ | N-Channel | 4740pF @ 25V | 7.7m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA56N15T | IXYS | $10.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtp56n15t-datasheets-9402.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 21 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 56A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 300W Tc | 140A | 500 mJ | N-Channel | 2250pF @ 25V | 36m Ω @ 28A, 10V | 4.5V @ 250μA | 56A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTP10N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixta10n60p-datasheets-9382.pdf | 600V | 10A | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 21 ns | 65 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 30A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5.5V @ 250μA | 10A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTP90N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth90n15t-datasheets-0089.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 455W | 1 | Not Qualified | R-PSFM-T3 | 22ns | 19 ns | 44 ns | 90A | 30V | SILICON | DRAIN | SWITCHING | 455W Tc | TO-220AB | 250A | 0.02Ohm | 0.75 mJ | 150V | N-Channel | 4100pF @ 25V | 20m Ω @ 45A, 10V | 4.5V @ 1mA | 90A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTA10P15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 83W Ta | 10A | 30A | 0.35Ohm | 200 mJ | P-Channel | 2210pF @ 25V | 350m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 36nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFA12N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp12n65x2-datasheets-2135.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 650V | 180W Tc | N-Channel | 1134pF @ 25V | 310m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 18.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC302NE7N3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc302ne7n3x1sa1-datasheets-2357.pdf | Die | Lead Free | 18 Weeks | EAR99 | Halogen Free | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 75V | 75V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 3.8V @ 270μA | 1A Tj | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N04-03P-E3 | Vishay Siliconix | $9.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0403pe3-datasheets-2358.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | TO-263 (D2Pak) | 6.5nF | 110A | 40V | 3.75W Ta 375W Tc | N-Channel | 6500pF @ 25V | 3.1mOhm @ 30A, 10V | 4V @ 250μA | 110A Tc | 150nC @ 10V | 3.1 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP15N60CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp15n60cfdxksa1-datasheets-2329.pdf | TO-220AB | 10.36mm | 15.95mm | 4.57mm | Lead Free | 3 | No | 156W | 156W | 1 | 1.82nF | 43 ns | 24ns | 5 ns | 47 ns | 13.4A | 20V | 650V | 330mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP42N15T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp42n15t-datasheets-4225.pdf | TO-220-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 42A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 200W Tc | TO-220AB | 100A | 0.045Ohm | 400 mJ | N-Channel | 1880pF @ 25V | 45m Ω @ 500mA, 10V | 4.5V @ 250μA | 42A Tc | 21nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPW65R190C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw65r190c7xksa1-datasheets-2292.pdf | TO-247-3 | Lead Free | 18 Weeks | 3 | Halogen Free | 72W | 1 | PG-TO247-3 | 1.15nF | 11 ns | 9 ns | 54 ns | 13A | 20V | 650V | 650V | 72W Tc | 404mOhm | N-Channel | 1150pF @ 400V | 190mOhm @ 5.7A, 10V | 4V @ 290μA | 13A Tc | 23nC @ 10V | 190 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8408-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfs84087trl-datasheets-2297.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | YES | NOT SPECIFIED | IRFS8408 | NOT SPECIFIED | FET General Purpose Power | Single | 40V | 294W Tc | 240A | N-Channel | 10250pF @ 25V | 1m Ω @ 100A, 10V | 3.9V @ 250μA | 240A Tc | 315nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP027N08N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp027n08n5aksa1-datasheets-2302.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 6.000006g | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 22 ns | 14ns | 15 ns | 46 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 214W Tc | TO-220AB | 480A | 0.0027Ohm | 374 mJ | 80V | N-Channel | 8970pF @ 40V | 2.7m Ω @ 100A, 10V | 3.8V @ 154μA | 120A Tc | 123nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTA74N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 74A | 150V | N-Channel | 74A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB110P06LMATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | 60V | 300W Tc | P-Channel | 8500pF @ 30V | 11m Ω @ 100A, 10V | 2V @ 5.55mA | 100A Tc | 281nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA44N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 44A | 250V | N-Channel | 44A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP047AN08A0-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 1.8g | ACTIVE, NOT REC (Last Updated: 1 week ago) | EAR99 | 8541.29.00.95 | e3 | MATTE TIN | NOT SPECIFIED | Single | NOT SPECIFIED | 310W | 80A | 20V | 310W Tc | 4.7mOhm | 75V | N-Channel | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA7N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp7n80p-datasheets-9747.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 32ns | 24 ns | 55 ns | 7A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 7A | 300 mJ | 800V | N-Channel | 1890pF @ 25V | 1.44 Ω @ 3.5A, 10V | 5V @ 1mA | 7A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTA130N065T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n065t2-datasheets-2316.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65V | 65V | 250W Tc | 330A | 0.0066Ohm | 600 mJ | N-Channel | 4800pF @ 25V | 6.6m Ω @ 50A, 10V | 4V @ 250μA | 130A Tc | 79nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA36N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 300W | 36A | 300V | N-Channel | 2250pF @ 25V | 110m Ω @ 500mA, 10V | 36A Tc | 70nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP1N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n80-datasheets-1682.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | Not Qualified | 19ns | 28 ns | 40 ns | 750mA | 20V | SILICON | DRAIN | SWITCHING | 40W Tc | TO-220AB | 0.75A | 3A | 100 mJ | 800V | N-Channel | 220pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 25μA | 750mA Tc | 8.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPI60R165CPAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipi60r165cpaksa1-datasheets-2318.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 3 | no | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 12 ns | 5ns | 50 ns | 21A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 192W Tc | 61A | 0.165Ohm | 522 mJ | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 21A Tc | 52nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTA48N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Trench™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta48n20t-datasheets-2323.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 28 ns | 46 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 250W Tc | TO-263AA | 130A | 0.05Ohm | 500 mJ | 200V | N-Channel | 3090pF @ 25V | 50m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IPB240N04S4R9ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb240n04s4r9atma1-datasheets-2324.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 16 Weeks | yes | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 240A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 960A | 0.00087Ohm | 750 mJ | N-Channel | 23000pF @ 25V | 0.87m Ω @ 100A, 10V | 4V @ 230μA | 240A Tc | 290nC @ 10V | 10V | ±20V |
