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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP80N06S2L09AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb80n06s2l09atma2-datasheets-8048.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | SINGLE | 1 | 10 ns | 19ns | 18 ns | 53 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 190W Tc | TO-220AB | N-Channel | 2620pF @ 25V | 8.5m Ω @ 52A, 10V | 2V @ 125μA | 80A Tc | 105nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFP4N60P3 | IXYS | $4.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n60p3-datasheets-2815.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 3 | 24 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1 | FET General Purpose Power | 15 ns | 24 ns | 4A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 114W Tc | TO-220AB | 4A | 8A | 200 mJ | N-Channel | 365pF @ 25V | 2.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTA380N036T4-7-TR | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-7, D2Pak (6 Leads + Tab) | 24 Weeks | 36V | 480W Tc | N-Channel | 13400pF @ 25V | 1m Ω @ 100A, 10V | 4V @ 250μA | 380A Tc | 260nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH130N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fch130n60-datasheets-2752.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | 3 | 12 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 25 ns | 16ns | 4 ns | 65 ns | 28A | 30V | SILICON | SWITCHING | 278W Tc | TO-247AB | 84A | 720 mJ | 600V | N-Channel | 3590pF @ 380V | 130m Ω @ 14A, 10V | 3.5V @ 250μA | 28A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFA110N15T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp110n15t2-datasheets-0040.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 150V | 480W Tc | N-Channel | 8600pF @ 25V | 13m Ω @ 500mA, 10V | 4.5V @ 250μA | 110A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFSL4115 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfs4115trl-datasheets-9799.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | TO-262 | 5.27nF | 99A | 150V | 375W Tc | N-Channel | 5270pF @ 50V | 12.1mOhm @ 62A, 10V | 5V @ 250μA | 99A Tc | 120nC @ 10V | 12.1 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP48P05T | IXYS | $1.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixty48p05t-datasheets-2147.pdf | TO-220-3 | 3 | 24 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 150W Tc | TO-220AB | 150A | 0.03Ohm | 300 mJ | P-Channel | 3660pF @ 25V | 30m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 53nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| AOTF260L | Alpha & Omega Semiconductor Inc. | $1.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 16 Weeks | FET General Purpose Power | 92A | Single | 60V | 1.9W Ta 46.5W Tc | N-Channel | 11800pF @ 30V | 2.6m Ω @ 20A, 10V | 3.2V @ 250μA | 19A Ta 92A Tc | 210nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R115CFD7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 2A (4 Weeks) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY26P10T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | TO-252 | 100V | 150W Tc | P-Channel | 3820pF @ 25V | 90mOhm @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1324S-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1324s7p-datasheets-2704.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.35mm | 4.55mm | 6 | 39 Weeks | No SVHC | 7 | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | 300W | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-XSSO-G6 | 19 ns | 240ns | 93 ns | 86 ns | 429A | 20V | DRAIN | SWITCHING | 2V | 240A | 230 mJ | 24V | N-Channel | 7700pF @ 19V | 1m Ω @ 160A, 10V | 4V @ 250μA | 240A Tc | 252nC @ 10V | |||||||||||||||||||||||||||||||||||||
| IRFB3207ZGPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfb3207zgpbf-datasheets-2770.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | No SVHC | 4.1MOhm | 3 | EAR99 | No | Single | 300W | 1 | FET General Purpose Power | 20 ns | 68ns | 68 ns | 55 ns | 210A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-220AB | 670A | 75V | N-Channel | 6920pF @ 50V | 4.1m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTA180N10T7-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-7, D2Pak (6 Leads + Tab) | 24 Weeks | 100V | 480W Tc | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA270N04T4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixta270n04t47-datasheets-2635.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | unknown | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.2m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-3P-3 Full Pack | 3 | 10 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 120W Tc | 80A | N-Channel | 1400pF @ 25V | 196m Ω @ 9.5A, 10V | 4V @ 1mA | 20A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C020NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4c020nt1g-datasheets-9519.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 3.2W Ta 134W Tc | N-Channel | 10144pF @ 15V | 0.7m Ω @ 30A, 10V | 2.2V @ 250μA | 47A Ta 303A Tc | 139nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF2804STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf2804s-datasheets-2439.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 16 Weeks | No SVHC | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 120ns | 130 ns | 130 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 2V | 300W Tc | 270A | 540 mJ | 40V | N-Channel | 6450pF @ 25V | 2m Ω @ 75A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AUIRFS4115 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfs4115trl-datasheets-9799.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | NOT SPECIFIED | IRFS4115 | NOT SPECIFIED | 99A | 150V | 375W Tc | N-Channel | 5270pF @ 50V | 12.1m Ω @ 62A, 10V | 5V @ 250μA | 99A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R165CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r165cpxksa1-datasheets-2740.pdf | TO-220-3 Full Pack | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 34W | 1 | Not Qualified | 12 ns | 5ns | 50 ns | 21A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 34W Tc | TO-220AB | 522 mJ | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 660μA | 21A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AUIRF1404STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1404strl-datasheets-2747.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.8W Ta 200W Tc | 75A | 650A | 0.004Ohm | 519 mJ | N-Channel | 7360pF @ 25V | 4m Ω @ 95A, 10V | 4V @ 250μA | 75A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIPC30N60C3X1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | 20 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI60R165CPXKSA1 | Infineon Technologies | $6.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | 3 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 21A | 61A | 0.165Ohm | 522 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL86062-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdbl86062f085-datasheets-2690.pdf | 8-PowerSFN | 6 Weeks | 850.0521mg | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 100V | 429W Tc | N-Channel | 6970pF @ 50V | 2m Ω @ 80A, 10V | 4.5V @ 250μA | 300A Tc | 124nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60elge3-datasheets-2694.pdf | TO-247-3 | 3 | 18 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | TO-247AC | 21A | 45A | 0.197Ohm | 286 mJ | N-Channel | 1690pF @ 100V | 197m Ω @ 11A, 10V | 5V @ 250μA | 21A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP14N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixta14n60p-datasheets-9417.pdf | 600V | 14A | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 27ns | 26 ns | 70 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | P-CHANNEL | 300W Tc | TO-220AB | 42A | 0.55Ohm | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 250μA | 14A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTA270N04T4-7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixta270n04t47-datasheets-2635.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 24 Weeks | yes | unknown | 270A | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.2m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCI25N60N-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fci25n60nf102-datasheets-2697.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 2.084g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | No | Single | 216W | FET General Purpose Power | 21 ns | 22ns | 5 ns | 68 ns | 25A | 30V | 216W Tc | 600V | N-Channel | 3352pF @ 100V | 125m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP3N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarVHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtp3n100p-datasheets-2645.pdf | TO-220-3 | 3 | 24 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 29 ns | 75 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 125W Tc | TO-220AB | 3A | 6A | 200 mJ | 1kV | N-Channel | 1100pF @ 25V | 4.8 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHB12N50C-E3 | Vishay Siliconix | $18.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf12n50ce3-datasheets-6578.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | 1.437803g | 3 | yes | AVALANCHE RATED | No | GULL WING | 260 | 4 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 35ns | 6 ns | 23 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 208W Tc | 28A | 0.555Ohm | N-Channel | 1375pF @ 25V | 555m Ω @ 4A, 10V | 5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFP130N10T | IXYS | $13.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfa130n10t-datasheets-9422.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 360W Tc | TO-220AB | 350A | 0.0091Ohm | 750 mJ | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 1mA | 130A Tc | 104nC @ 10V | 10V |
