Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTY1R4N120P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1200V | 86W Tc | N-Channel | 666pF @ 25V | 13 Ω @ 700mA, 10V | 4.5V @ 100μA | 1.4A Tc | 24.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R280E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r280e6xksa1-datasheets-2854.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 32W | 1 | Not Qualified | 13.8A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 32W Tc | TO-220AB | 40A | 0.28Ohm | 284 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 13.8A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AOB480L | Alpha & Omega Semiconductor Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | FET General Purpose Power | 180A | Single | 80V | 1.9W Ta 333W Tc | N-Channel | 7820pF @ 40V | 4.2m Ω @ 20A, 10V | 4V @ 250μA | 15A Ta 180A Tc | 140nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C604NLAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c604nlwfaft1g-datasheets-2820.pdf | 8-PowerTDFN, 5 Leads | 60V | 200W Tc | N-Channel | 8900pF @ 25V | 1.2m Ω @ 50A, 10V | 2V @ 250μA | 287A Tc | 52nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF292L | Alpha & Omega Semiconductor Inc. | $11.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | 100V | 47W Tc | N-Channel | 6775pF @ 50V | 4.5m Ω @ 20A, 10V | 3.4V @ 250μA | 70A Tc | 126nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT292L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 | 18 Weeks | TO-220 | 6.775nF | 105A | 100V | 2.1W Ta 300W Tc | N-Channel | 6775pF @ 50V | 4.5mOhm @ 20A, 10V | 3.4V @ 250μA | 14.5A Ta 105A Tc | 126nC @ 10V | 4.5 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R280E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp60r280e6xksa1-datasheets-2876.pdf | TO-220-3 | 3 | 12 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 104W Tc | TO-220AB | 40A | 0.28Ohm | 284 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 13.8A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7342DP-T1-GE3 | Vishay Siliconix | $1.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7342dpt1ge3-datasheets-2880.pdf | PowerPAK® SO-8 | 5 | 13 Weeks | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 40 | 1 | Not Qualified | R-XDSO-C5 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 9A | 60A | 0.00825Ohm | N-Channel | 1900pF @ 15V | 8.25m Ω @ 15A, 10V | 1.8V @ 250μA | 9A Ta | 19nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| BSC025N08LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc025n08ls5atma1-datasheets-2882.pdf | 8-PowerTDFN | 26 Weeks | 80V | 2.5W Ta 156W Tc | N-Channel | 7500pF @ 40V | 2.5m Ω @ 50A, 10V | 2.3V @ 115μA | 100A Tc | 55nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUC100N10S5N040ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-iauc100n10s5n040atma1-datasheets-2883.pdf | 8-PowerTDFN | 16 Weeks | 100V | 167W Tc | N-Channel | 5200pF @ 50V | 4m Ω @ 50A, 10V | 3.8V @ 90μA | 100A Tc | 78nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6641TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf6641trpbf-datasheets-2886.pdf | 200V | 4.6A | DirectFET™ Isometric MZ | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | 51mOhm | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 16 ns | 11ns | 6.5 ns | 31 ns | 3.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 26A | 37A | 46 mJ | 200V | N-Channel | 2290pF @ 25V | 59.9m Ω @ 5.5A, 10V | 4.9V @ 150μA | 4.6A Ta 26A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTY48P05T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 50V | 150W Tc | P-Channel | 3660pF @ 25V | 30m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 53nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP16N50P | IXYS | $0.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixta16n50p-datasheets-9413.pdf | 500V | 16A | TO-220-3 | Lead Free | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 28ns | 25 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 300W Tc | TO-220AB | 0.4Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| NVMFS5C410NWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c410naft1g-datasheets-8527.pdf | 8-PowerTDFN, 5 Leads | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.9W Ta 166W Tc | N-Channel | 6100pF @ 25V | 0.92m Ω @ 50A, 10V | 3.5V @ 250μA | 46A Ta 300A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S209AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb80n06s209atma2-datasheets-8017.pdf | TO-220-3 | Contains Lead | 3 | 10 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | 1 | R-PSFM-T3 | 80A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 190W Tc | TO-220AB | 320A | 0.0091Ohm | 370 mJ | N-Channel | 2360pF @ 25V | 9.1m Ω @ 50A, 10V | 4V @ 125μA | 80A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP60R280C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp60r280c6xksa1-datasheets-2793.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 104W | 1 | Not Qualified | 13 ns | 11ns | 12 ns | 100 ns | 13.8A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 104W Tc | TO-220AB | 40A | 0.28Ohm | 284 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 13.8A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFS59N10DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb59n10dpbf-datasheets-3558.pdf | 100V | 59A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 10.54mm | Contains Lead, Lead Free | 2 | 14 Weeks | No SVHC | 25mOhm | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | Not Qualified | R-PSSO-G2 | 16 ns | 90ns | 12 ns | 20 ns | 59A | 30V | 100V | SILICON | DRAIN | SWITCHING | 5.5V | 3.8W Ta 200W Tc | 100V | N-Channel | 2450pF @ 25V | 5.5 V | 25m Ω @ 35.4A, 10V | 5.5V @ 250μA | 59A Tc | 114nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IRFSL7434PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfs7434trlpbf-datasheets-5878.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 2.084002g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 24 ns | 68ns | 68 ns | 115 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 3V | 294W Tc | 780A | 40V | N-Channel | 10820pF @ 25V | 1.6m Ω @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 324nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L09AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb80n06s2l09atma2-datasheets-8048.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | SINGLE | 1 | 10 ns | 19ns | 18 ns | 53 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 190W Tc | TO-220AB | N-Channel | 2620pF @ 25V | 8.5m Ω @ 52A, 10V | 2V @ 125μA | 80A Tc | 105nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFP4N60P3 | IXYS | $4.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n60p3-datasheets-2815.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 3 | 24 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1 | FET General Purpose Power | 15 ns | 24 ns | 4A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 114W Tc | TO-220AB | 4A | 8A | 200 mJ | N-Channel | 365pF @ 25V | 2.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TK12A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.8nF | 40ns | 15 ns | 12A | 30V | 600V | 45W Tc | N-Channel | 1800pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 1mA | 12A Ta | 38nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4952NFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 7 Weeks | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW292 | Alpha & Omega Semiconductor Inc. | $1.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | TO-262 | 6.775nF | 105A | 100V | 1.9W Ta 300W Tc | N-Channel | 6775pF @ 50V | 4.1mOhm @ 20A, 10V | 3.4V @ 250μA | 14.5A Ta 105A Tc | 126nC @ 10V | 4.1 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA90N075T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 75V | 180W Tc | N-Channel | 3290pF @ 25V | 10m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL7534PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7534pbf-datasheets-3931.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 2.084002g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 20 ns | 134ns | 93 ns | 118 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7V | 294W Tc | 944A | 0.0024Ohm | 775 mJ | N-Channel | 10034pF @ 25V | 2.4m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 279nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AOWF20S60 | Alpha & Omega Semiconductor Inc. | $1.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 16 Weeks | 3 | No | 28W | 1 | 1.038nF | 20A | 600V | 28W Tc | N-Channel | 1038pF @ 100V | 199mOhm @ 10A, 10V | 4.1V @ 250μA | 20A Tc | 19.8nC @ 10V | 199 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC90R340C3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR014TR | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 21 Weeks | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE | No | e0 | TIN LEAD | GULL WING | 240 | 3 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 25W Tc | 0.2Ohm | 27.4 mJ | N-Channel | 400pF @ 25V | 200m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||
| R6015ENZC8 | ROHM Semiconductor | $5.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-3P-3 Full Pack | 3 | 10 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 120W Tc | 0.29Ohm | 284 mJ | N-Channel | 910pF @ 25V | 290m Ω @ 6.5A, 10V | 4V @ 1mA | 15A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHP28N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp28n65ege3-datasheets-2836.pdf | TO-220-3 | 3 | 18 Weeks | 6.000006g | 122mOhm | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSFM-T3 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 250W Tc | TO-220AB | 84A | N-Channel | 3405pF @ 100V | 112m Ω @ 14A, 10V | 4V @ 250μA | 29A Tc | 140nC @ 10V | 10V | ±30V |
