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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH36N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 36A | 200V | N-Channel | 36A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6015ANJTL | ROHM Semiconductor | $7.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | yes | No | e2 | Tin/Copper (Sn/Cu) | SINGLE | GULL WING | 260 | 3 | 1 | 10 | 1 | FET General Purpose Power | R-PSSO-G2 | 50 ns | 50ns | 60 ns | 150 ns | 15A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 100W Tc | 60A | N-Channel | 1700pF @ 25V | 300m Ω @ 7.5A, 10V | 4.5V @ 1mA | 15A Tc | 50nC @ 10V | ||||||||||||||||||||||||||||||||||||||||
| IPI111N15N3GAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipp111n15n3gxksa1-datasheets-4542.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.36mm | 9.45mm | 4.52mm | Contains Lead | 3 | 18 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 214W | 1 | Not Qualified | 17 ns | 35ns | 9 ns | 32 ns | 83A | 20V | 150V | SILICON | SWITCHING | 214W Tc | N-Channel | 3230pF @ 75V | 11.1m Ω @ 83A, 10V | 4V @ 160μA | 83A Tc | 55nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTA15P15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixty15p15t-datasheets-2144.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 150W Tc | TO-263AA | 45A | 0.24Ohm | 300 mJ | P-Channel | 3650pF @ 25V | 240m Ω @ 7A, 10V | 4.5V @ 250μA | 15A Tc | 48nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||
| AUIRF7769L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf7769l2tr-datasheets-2501.pdf | DirectFET™ Isometric L8 | Lead Free | 9 | 16 Weeks | No SVHC | 15 | EAR99 | AEC-Q101 | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XBCC-N9 | 375A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.7V | 3.3W Ta 125W Tc | 20A | 500A | 0.0035Ohm | 260 mJ | N-Channel | 11560pF @ 25V | 3.5m Ω @ 74A, 10V | 4V @ 250μA | 375A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK13A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.8nF | 40ns | 15 ns | 13A | 30V | 500V | 45W Tc | N-Channel | 1800pF @ 25V | 400mOhm @ 6.5A, 10V | 4V @ 1mA | 13A Ta | 38nC @ 10V | 400 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH56N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 56A | 150V | N-Channel | 56A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1324STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1324strl7p-datasheets-9462.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | 2 | 16 Weeks | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 190ns | 120 ns | 83 ns | 195A | 20V | SILICON | SWITCHING | 300W Tc | 1420A | 0.00165Ohm | 270 mJ | 24V | N-Channel | 7590pF @ 24V | 1.65m Ω @ 195A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TK16E60W,S1VX | Toshiba Semiconductor and Storage | $2.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 | 16 Weeks | No | Single | 130W | 1 | 25ns | 5 ns | 100 ns | 15.8A | 30V | 130W Tc | 600V | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVB110N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvb110n65s3f-datasheets-2475.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 240W Tc | N-Channel | 2560pF @ 400V | 110m Ω @ 15A, 10V | 5V @ 3mA | 30A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI120N04S302AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipp120n04s302aksa1-datasheets-0279.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 3 | EAR99 | ULTRA LOW RESISTANCE | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 120A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | 480A | 1880 mJ | N-Channel | 14300pF @ 25V | 2.3m Ω @ 80A, 10V | 4V @ 230μA | 120A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R145CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA5N100P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 1000V | 250W Tc | N-Channel | 1830pF @ 25V | 2.8 Ω @ 2.5A, 10V | 6V @ 250μA | 5A Tc | 33.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC26N12NX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc26n12nx1sa1-datasheets-2484.pdf | Die | Lead Free | 18 Weeks | EAR99 | Halogen Free | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 120V | 120V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 4V @ 244μA | 1A Tj | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA48P05T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixty48p05t-datasheets-2147.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 150W Tc | 150A | 0.03Ohm | 300 mJ | P-Channel | 3660pF @ 25V | 30m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 53nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| IXTA76N25T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 250V | 460W Tc | N-Channel | 4500pF @ 25V | 39m Ω @ 38A, 10V | 5V @ 1mA | 76A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA26P10T | IXYS | $6.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty26p10t-datasheets-9365.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 150W Tc | TO-263AA | 80A | 0.09Ohm | 300 mJ | P-Channel | 3820pF @ 25V | 90m Ω @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||
| IPA60R120C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r120c7xksa1-datasheets-2485.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 11A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 32W Tc | TO-220AB | 66A | 0.12Ohm | 78 mJ | N-Channel | 1500pF @ 400V | 120m Ω @ 7.8A, 10V | 4V @ 390μA | 11A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| R5016ANJTL | ROHM Semiconductor | $14.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | yes | No | e2 | Tin/Copper (Sn/Cu) | SINGLE | GULL WING | 260 | 3 | 1 | 10 | 1 | FET General Purpose Power | R-PSSO-G2 | 40 ns | 50ns | 55 ns | 150 ns | 16A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100W Tc | 64A | 0.27Ohm | 500V | N-Channel | 1800pF @ 25V | 270m Ω @ 8A, 10V | 4.5V @ 1mA | 16A Ta | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXKP10N60C5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp10n60c5-datasheets-2447.pdf | TO-220-3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 109W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 10A | 20V | SILICON | SWITCHING | TO-220AB | 600A | 0.385Ohm | 225 mJ | 600V | N-Channel | 790pF @ 100V | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 10A Tc | 22nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB90R340C3ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb90r340c3atma2-datasheets-2448.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 900V | 208W Tc | N-Channel | 2400pF @ 100V | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 15A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC26N60C3X1SA5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH150N65F-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fch150n65ff155-datasheets-2451.pdf | TO-247-3 | 12 Weeks | 6.39g | 150mOhm | ACTIVE (Last Updated: 6 days ago) | yes | 1 | Single | FET General Purpose Power | 28 ns | 15ns | 6 ns | 73 ns | 24A | 30V | 298W Tc | 650V | N-Channel | 3737pF @ 100V | 150m Ω @ 12A, 10V | 5V @ 2.4mA | 24A Tc | 94nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7430GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 | 375W | TO-220AB | 14.24nF | 195A | 40V | N-Channel | 14240pF @ 25V | 1.3mOhm @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 460nC @ 10V | 1.3 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12E60W,S1VX | Toshiba Semiconductor and Storage | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 | 16 Weeks | No | Single | 110W | 1 | 23ns | 5.5 ns | 85 ns | 11.5A | 30V | 110W Tc | 600V | N-Channel | 890pF @ 300V | 300m Ω @ 5.8A, 10V | 3.7V @ 600μA | 11.5A Ta | 25nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R120C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-ipp60r120c7xksa1-datasheets-2467.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 19A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 92W Tc | TO-220AB | 66A | 0.12Ohm | 78 mJ | N-Channel | 1500pF @ 400V | 120m Ω @ 7.8A, 10V | 4V @ 390μA | 19A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| CSD19505KTTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 3 | 8 Weeks | 3 | ACTIVE (Last Updated: 1 week ago) | yes | 4.44mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | CSD19505 | Single | NOT SPECIFIED | 1 | 200A | SILICON | DRAIN | SWITCHING | 80V | 80V | 300W Tc | 400A | 510 mJ | N-Channel | 7920pF @ 40V | 3.1m Ω @ 100A, 10V | 3.2V @ 250μA | 200A Ta | 76nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTA86N20T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 200V | 550W Tc | N-Channel | 4500pF @ 25V | 33m Ω @ 43A, 10V | 5V @ 1mA | 86A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP14N60PM | IXYS | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp14n60pm-datasheets-2437.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 24 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 75W Tc | TO-220AB | 7A | 42A | 0.55Ohm | 900 mJ | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 250μA | 7A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHF22N65E-GE3 | Vishay Siliconix | $17.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf22n65ege3-datasheets-2438.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | Unknown | 3 | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 227W | 1 | 33ns | 38 ns | 73 ns | 22A | 4V | 35W Tc | 650V | N-Channel | 2415pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V |
