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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP74N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 74A | 150V | N-Channel | 74A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 125W Tc | N-Channel | 1020pF @ 25V | 6 Ω @ 1.5A, 0V | 4.5V @ 250μA | 3A Tj | 37.5nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R6N100D2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r6n100d2-datasheets-1843.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 24 Weeks | 3 | yes | unknown | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 100W Tc | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 1.6A Tc | 27nC @ 5V | Depletion Mode | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C677NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c677nlt1g-datasheets-2199.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.5W Ta 37W Tc | N-Channel | 620pF @ 25V | 15m Ω @ 10A, 10V | 2V @ 25μA | 11A Ta 36A Tc | 9.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R4N100P | IXYS | $2.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n100p-datasheets-1347.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 35ns | 28 ns | 65 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 63W Tc | 3A | 100 mJ | 1kV | N-Channel | 450pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 50μA | 1.4A Tc | 17.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFP12N65X2M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp12n65x2m-datasheets-2173.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 650V | 40W Tc | N-Channel | 1134pF @ 25V | 310m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 18.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ60N10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-3P-3, SC-65-3 | 3 | 24 Weeks | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 176W Tc | 60A | 180A | 0.018Ohm | 500 mJ | N-Channel | 2650pF @ 25V | 18m Ω @ 25A, 10V | 4.5V @ 50μA | 60A Tc | 49nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA200N055T2-7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 360W Tc | 200A | 500A | 0.0042Ohm | 600 mJ | N-Channel | 6970pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 200A Tc | 109nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIHG460B-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irfp460bpbf-datasheets-4496.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | 3 | 14 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 278W | 1 | 24 ns | 31ns | 56 ns | 117 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 500V | 500V | 2V | 278W Tc | TO-247AC | 62A | 0.25Ohm | N-Channel | 3094pF @ 100V | 250m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA170N075T2 | IXYS | $19.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta170n075t2-datasheets-2178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | Single | 360W | TO-263 (IXTA) | 6.86nF | 11ns | 19 ns | 25 ns | 170A | 20V | 75V | 360W Tc | 5.4mOhm | 75V | N-Channel | 6860pF @ 25V | 5.4mOhm @ 50A, 10V | 4V @ 250μA | 170A Tc | 109nC @ 10V | 5.4 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| R6012ANX | ROHM Semiconductor | $13.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | 10.3mm | 15.4mm | 4.8mm | 3 | 17 Weeks | 3 | yes | No | 260 | 3 | Single | 10 | 50W | 1 | FET General Purpose Powers | 30 ns | 30ns | 35 ns | 90 ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 2A | 8A | 0.265 mJ | 600V | N-Channel | 1300pF @ 25V | 420m Ω @ 6A, 10V | 4.5V @ 1mA | 12A Ta | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTA340N04T4-7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixta340n04t4-datasheets-9966.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 24 Weeks | yes | unknown | 340A | 40V | 480W Tc | N-Channel | 13000pF @ 25V | 1.7m Ω @ 100A, 10V | 4V @ 250μA | 340A Tc | 256nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S2L05AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipi80n06s2l05aksa2-datasheets-2183.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 14 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | SINGLE | 1 | 19 ns | 93ns | 90 ns | 67 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | 0.006Ohm | 800 mJ | N-Channel | 5700pF @ 25V | 4.8m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTP12N50PM | IXYS | $10.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp12n50pm-datasheets-2146.pdf | 500V | 12A | TO-220-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | 27ns | 20 ns | 65 ns | 6A | 30V | SILICON | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 6A | 0.5Ohm | 600 mJ | 500V | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 250μA | 6A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFA22N65X2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 650V | 390W Tc | N-Channel | 2190pF @ 25V | 145m Ω @ 11A, 10V | 5V @ 1.5mA | 22A Tc | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY48P05T | IXYS | $3.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixty48p05t-datasheets-2147.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 17 Weeks | 3 | EAR99 | AVALANCHE RATED | SINGLE | GULL WING | 4 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 150W Tc | TO-252AA | 150A | P-Channel | 3660pF @ 25V | 30m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 53nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||
| FCA20N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fca20n60-datasheets-2148.pdf | 600V | 20A | TO-3P-3, SC-65-3 | Lead Free | 3 | 43 Weeks | 6.401g | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | FCA20N60 | Single | 208W | 1 | 62 ns | 140ns | 65 ns | 230 ns | 20A | 30V | SILICON | SWITCHING | 208W Tc | 60A | 690 mJ | 600V | N-Channel | 3080pF @ 25V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| SIHG17N60D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg17n60dge3-datasheets-2154.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | 3 | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 1 | 22 ns | 56ns | 30 ns | 37 ns | 17A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 3V | 277.8W Tc | TO-247AC | 48A | N-Channel | 1780pF @ 100V | 340m Ω @ 8A, 10V | 5V @ 250μA | 17A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| AUIRF2903ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf2903zstrl-datasheets-2158.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 231W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 100ns | 37 ns | 48 ns | 160A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 231W Tc | 1020A | 0.0024Ohm | 30V | N-Channel | 6320pF @ 25V | 2.4m Ω @ 75A, 10V | 4V @ 150μA | 160A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF830A | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | /files/vishaysiliconix-irf830apbf-datasheets-1618.pdf | 500V | 5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 49 Weeks | 6.000006g | 3 | 1 | Single | 74W | TO-220AB | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 74W Tc | 1.4Ohm | 500V | N-Channel | 620pF @ 25V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| NTMFS08N004C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs08n004c-datasheets-2169.pdf | 8-PowerTDFN | 20 Weeks | 106mg | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 80V | 125W Tc | N-Channel | 4250pF @ 40V | 4m Ω @ 44A, 10V | 4V @ 250μA | 126A Tc | 55nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK25V60X,LQ | Toshiba Semiconductor and Storage | $6.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 4-VSFN Exposed Pad | 16 Weeks | 600V | 180W Tc | N-Channel | 2400pF @ 300V | 135m Ω @ 7.5A, 10V | 3.5V @ 1.2mA | 25A Ta | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP12N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp12n65x2-datasheets-2135.pdf | TO-220-3 | 19 Weeks | compliant | 650V | 180W Tc | N-Channel | 1134pF @ 25V | 310m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 18.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVATS5A304PLZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvats5a304plzt4g-datasheets-2136.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | NOT SPECIFIED | NOT SPECIFIED | 60V | 108W Tc | P-Channel | 13000pF @ 20V | 6.5m Ω @ 50A, 10V | 2.6V @ 1mA | 120A Ta | 250nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R165CPX1SA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL38N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb38n20dpbf-datasheets-2918.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.826mm | 3 | 14 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 300W | SINGLE | 260 | 30 | 3.8W | 1 | FET General Purpose Power | 16 ns | 95ns | 47 ns | 29 ns | 44A | 30V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 5V | 0.054Ohm | 460 mJ | N-Channel | 2900pF @ 25V | 54m Ω @ 26A, 10V | 5V @ 250μA | 43A Tc | 91nC @ 10V | ||||||||||||||||||||||||||||||||||
| IXTP10N60PM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp10n60pm-datasheets-2143.pdf | 600V | 10A | TO-220-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | 24ns | 18 ns | 55 ns | 5A | 30V | SILICON | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 5A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5V @ 100μA | 5A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTY15P15T | IXYS | $3.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty15p15t-datasheets-2144.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | SINGLE | GULL WING | 4 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 150W Tc | 45A | 0.24Ohm | 300 mJ | P-Channel | 3650pF @ 25V | 240m Ω @ 7A, 10V | 4.5V @ 250μA | 15A Tc | 48nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||
| IPW65R190CFDFKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r190cfdatma1-datasheets-1970.pdf | TO-247-3 | 18 Weeks | 650V | 151W Tc | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 700μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU05N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtu05n100-datasheets-2119.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | EAR99 | AVALANCHE RATED | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 750mA | 30V | SILICON | DRAIN | SWITCHING | 1000V | 40W Tc | 0.75A | 3A | 100 mJ | 1kV | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 250μA | 750mA Tc | 7.8nC @ 10V | 10V | ±30V |
