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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AUIRFS8408-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfs84087trl-datasheets-2297.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | YES | NOT SPECIFIED | IRFS8408 | NOT SPECIFIED | FET General Purpose Power | Single | 40V | 294W Tc | 240A | N-Channel | 10250pF @ 25V | 1m Ω @ 100A, 10V | 3.9V @ 250μA | 240A Tc | 315nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMTS0D7N06CTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmts0d7n06ctxg-datasheets-2255.pdf | 8-PowerTDFN | 33 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 5W Ta 294.6W Tc | N-Channel | 11535pF @ 30V | 0.72m Ω @ 50A, 10V | 4V @ 250μA | 60.5A Ta 464A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R150CFDAATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r150cfdaaksa1-datasheets-9489.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 18 Weeks | 3 | no | HIGH RELIABILITY | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 22.4A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 195.3W Tc | 72A | 0.15Ohm | 614 mJ | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTP36N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 300W | 36A | 300V | N-Channel | 2250pF @ 25V | 110m Ω @ 500mA, 10V | 36A Tc | 70nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK18N65L | Alpha & Omega Semiconductor Inc. | $2.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 417W | 1 | 18A | 30V | 650V | 417W Tc | N-Channel | 3785pF @ 25V | 390m Ω @ 9A, 10V | 4.5V @ 250μA | 18A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP12N50P | IXYS | $15.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp12n50p-datasheets-2268.pdf | 500V | 12A | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | 27ns | 20 ns | 55 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 0.5Ohm | 600 mJ | 500V | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 250μA | 12A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTA36N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 36A | 200V | N-Channel | 36A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA60N20T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 200V | 500W Tc | N-Channel | 4530pF @ 25V | 40m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP12N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth12n65x2-datasheets-9746.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 12A | 650V | 180W Tc | N-Channel | 1100pF @ 25V | 300m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMTS1D2N08H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmts1d2n08h-datasheets-2270.pdf | 8-PowerTDFN | 33 Weeks | yes | 80V | 5W Ta 300W Tc | N-Channel | 10100pF @ 40V | 1.1m Ω @ 90A, 10V | 4V @ 590μA | 43.5A Ta 337A Tc | 147nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK13A50DA(STA4,Q,M | Toshiba Semiconductor and Storage | $2.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 67 | No | 45W | 25ns | 15 ns | 110 ns | 12.5A | 30V | 45W Tc | 500V | N-Channel | 1550pF @ 25V | 470m Ω @ 6.3A, 10V | 4V @ 1mA | 12.5A Ta | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF2804S-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf2804s7p-datasheets-2273.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.668mm | 4.572mm | 9.652mm | 6 | 13 Weeks | No SVHC | 7 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW-ON RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G6 | 17 ns | 150ns | 100 ns | 110 ns | 240A | 20V | SILICON | DRAIN | SWITCHING | 2V | 330W Tc | 40V | N-Channel | 6930pF @ 25V | 1.6m Ω @ 160A, 10V | 4V @ 250μA | 240A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AUIRF2804L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-auirf2804s-datasheets-2439.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.6228mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | 13 ns | 120ns | 130 ns | 130 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 2V | 300W Tc | 270A | 0.002Ohm | 540 mJ | 40V | N-Channel | 6450pF @ 25V | 2m Ω @ 75A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFA4N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfp4n100p-datasheets-2051.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 150W Tc | 4A | 8A | 200 mJ | N-Channel | 1456pF @ 25V | 3.3 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 26nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFA130N10T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 100V | 360W Tc | N-Channel | 6600pF @ 25V | 10.1m Ω @ 65A, 10V | 4.5V @ 1mA | 130A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH170N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fch170n60-datasheets-2241.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | 3 | 12 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 21 ns | 12ns | 3.8 ns | 55 ns | 22A | 30V | SILICON | SWITCHING | 227W Tc | TO-247AB | 66A | 525 mJ | 600V | N-Channel | 2860pF @ 380V | 170m Ω @ 11A, 10V | 3.5V @ 250μA | 22A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA1R4N120P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1200V | 86W Tc | N-Channel | 666pF @ 25V | 13 Ω @ 700mA, 10V | 4.5V @ 100μA | 1.4A Tc | 24.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH190N65F-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fch190n65ff155-datasheets-2248.pdf | TO-247-3 | 3 | 12 Weeks | 6.39g | 190mOhm | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 11ns | 4.2 ns | 62 ns | 20.6A | 30V | SILICON | SWITCHING | 650V | 650V | 208W Tc | TO-247AB | 400 mJ | N-Channel | 3225pF @ 100V | 190m Ω @ 10A, 10V | 5V @ 2mA | 20.6A Tc | 78nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTMFS5C677NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c677nlt1g-datasheets-2199.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.5W Ta 37W Tc | N-Channel | 620pF @ 25V | 15m Ω @ 10A, 10V | 2V @ 25μA | 11A Ta 36A Tc | 9.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R4N100P | IXYS | $2.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n100p-datasheets-1347.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 35ns | 28 ns | 65 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 63W Tc | 3A | 100 mJ | 1kV | N-Channel | 450pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 50μA | 1.4A Tc | 17.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTP12N65X2M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp12n65x2m-datasheets-2208.pdf | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | 650V | 40W Tc | N-Channel | 1100pF @ 25V | 300m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 17.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPA21N50C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spi21n50c3xksa1-datasheets-2189.pdf | TO-220-3 Full Pack | 3 | yes | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 560V | 500V | 34.5W Tc | TO-220AB | 21A | 63A | 0.19Ohm | 690 mJ | N-Channel | 2400pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 21A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTP44N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 44A | 250V | N-Channel | 44A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.55nF | 25ns | 15 ns | 12A | 30V | 550V | 45W Tc | N-Channel | 1550pF @ 25V | 570mOhm @ 6A, 10V | 4V @ 1mA | 12A Ta | 28nC @ 10V | 570 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS244ZE3043AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Surface Mount, Through Hole | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts244ze3062aatma2-datasheets-1621.pdf | 55V | 35A | TO-220-5 | Contains Lead | 18 Weeks | 3.000003g | 5 | Tin | Halogen Free | 1 | Single | 170W | PG-TO220-5-12 | 2.66nF | 55V | 15 ns | 70ns | 25 ns | 40 ns | 35A | 20V | 55V | 55V | 170W Tc | 13mOhm | 55V | N-Channel | 2660pF @ 25V | 13mOhm @ 19A, 10V | 2V @ 130μA | 35A Tc | 130nC @ 10V | Temperature Sensing Diode | 13 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK13A55DA(STA4,QM) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 40ns | 15 ns | 12.5A | 30V | 550V | 45W Tc | N-Channel | 1800pF @ 25V | 480m Ω @ 6.3A, 10V | 4V @ 1mA | 12.5A Ta | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCA20N60-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fca20n60f109-datasheets-4190.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 6.401g | 190MOhm | 3 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | No | e3 | MATTE TIN | FCA20N60 | Single | 208W | 1 | 62 ns | 140ns | 65 ns | 230 ns | 20A | 30V | SILICON | SWITCHING | 208W Tc | 60A | 690 mJ | 600V | N-Channel | 3080pF @ 25V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IPC30S2SN08NX2MA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 18 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ36N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 200V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG17N60D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg17n60dge3-datasheets-2154.pdf | TO-247-3 | 3 | 20 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 22 ns | 56ns | 30 ns | 37 ns | 17A | 5V | SILICON | DRAIN | SWITCHING | 277.8W Tc | TO-247AC | 48A | 600V | N-Channel | 1780pF @ 100V | 340m Ω @ 8A, 10V | 5V @ 250μA | 17A Tc | 90nC @ 10V | 10V | ±30V |
