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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK11A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 25ns | 15 ns | 11A | 30V | 600V | 45W Tc | N-Channel | 1550pF @ 25V | 650m Ω @ 5.5A, 10V | 4V @ 1mA | 11A Ta | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfbc40spbf-datasheets-1879.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 8 Weeks | 2.387001g | 3 | No | 1 | Single | TO-262-3 | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 6.2A | 20V | 600V | 3.1W Ta 130W Tc | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK14A45DA(STA4,QM) | Toshiba Semiconductor and Storage | $11.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 13.5A | 450V | N-Channel | 410mOhm @ 6.8A, 10V | 13.5A | 410 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPA15N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa15n65c3xksa1-datasheets-1981.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | yes | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 650V | 34W Tc | TO-220AB | 15A | 45A | 0.28Ohm | 460 mJ | N-Channel | 1600pF @ 25V | 280m Ω @ 9.4A, 10V | 3.9V @ 675μA | 15A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| R6020KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/rohm-r6020knzc8-datasheets-4083.pdf | TO-3P-3 Full Pack | 3 | 15 Weeks | No SVHC | 3 | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 5V | 68W Tc | 60A | 0.196Ohm | 418 mJ | N-Channel | 1550pF @ 25V | 196m Ω @ 9.5A, 10V | 5V @ 1mA | 20A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP48N20TM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 26 Weeks | 200V | 250W Tc | N-Channel | 3090pF @ 25V | 50m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SKP202 | Sanken | $4.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-skp202vr-datasheets-1934.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 45A | SILICON | SINGLE | SWITCHING | 200V | 200V | 95W Tc | 180A | 0.053Ohm | 200 mJ | N-Channel | 2000pF @ 25V | 53m Ω @ 22A, 10V | 4.5V @ 1mA | 45A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C404NLTT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c404nltt3g-datasheets-1618.pdf | 8-PowerTDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.9W Ta 200W Tc | N-Channel | 12168pF @ 25V | 0.75m Ω @ 50A, 10V | 2V @ 250μA | 181nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB50R140CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipb50r140cpatma1-datasheets-2013.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 192W | 1 | Not Qualified | R-PSSO-G2 | 35 ns | 14ns | 8 ns | 80 ns | 23A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 550V | 192W Tc | 56A | N-Channel | 2540pF @ 100V | 140m Ω @ 14A, 10V | 3.5V @ 930μA | 23A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA4N70X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | compliant | 700V | 80W Tc | N-Channel | 386pF @ 25V | 850m Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 11.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT026N10N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™5 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | /files/infineontechnologies-ipt026n10n5atma1-datasheets-2021.pdf | 8-PowerSFN | 18 Weeks | 100V | 214W Tc | N-Channel | 8800pF @ 50V | 2.6m Ω @ 150A, 10V | 3.8V @ 158μA | 27A Ta 202A Tc | 120nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU08N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 8A | 1000V | N-Channel | 8A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60elge3-datasheets-1970.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | 21A | 45A | 0.197Ohm | 286 mJ | N-Channel | 1690pF @ 100V | 197m Ω @ 11A, 10V | 5V @ 250μA | 21A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8A60W,S4VX | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 570pF | 16 Weeks | Single | 30W | TO-220SIS | 570pF | 20ns | 5.5 ns | 70 ns | 8A | 30V | 600V | 30W Tc | 420mOhm | 600V | N-Channel | 570pF @ 300V | 500mOhm @ 4A, 10V | 3.7V @ 400μA | 8A Ta | 18.5nC @ 10V | Super Junction | 500 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7868ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7868adpt1e3-datasheets-5408.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-XDSO-C5 | 40A | 16V | SILICON | DRAIN | 20V | 20V | 5.4W Ta 83W Tc | 35A | 70A | 0.00275Ohm | 45 mJ | N-Channel | 6110pF @ 10V | 2.25m Ω @ 20A, 10V | 1.6V @ 250μA | 40A Tc | 150nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| DMTH10H005SCT | Diodes Incorporated | $2.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth10h005sct-datasheets-1976.pdf | TO-220-3 | 3 | 19 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 187W Tc | TO-220AB | 140A | 400A | 0.005Ohm | 542 mJ | N-Channel | 8474pF @ 50V | 5m Ω @ 13A, 10V | 4V @ 250μA | 140A Tc | 111.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP039N10N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp039n10n5aksa1-datasheets-1922.pdf | TO-220-3 | 3 | 13 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 188W Tc | TO-220AB | 100A | 400A | 0.0039Ohm | 196 mJ | N-Channel | 7000pF @ 50V | 3.9m Ω @ 50A, 10V | 3.8V @ 125μA | 100A Tc | 95nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3305 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-auirf3305-datasheets-1924.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.72mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 330W | 1 | FET General Purpose Power | 16 ns | 88ns | 34 ns | 43 ns | 140A | 20V | SILICON | SWITCHING | 2V | 330W Tc | TO-220AB | 560A | 0.008Ohm | 860 mJ | 55V | N-Channel | 3650pF @ 25V | 8m Ω @ 75A, 10V | 4V @ 250μA | 140A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIHA21N60EF-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siha21n60efe3-datasheets-1929.pdf | TO-220-3 Full Pack | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 35W Tc | TO-220AB | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP8N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp8n65x2-datasheets-1933.pdf | TO-220-3 | 19 Weeks | compliant | 650V | 150W Tc | N-Channel | 790pF @ 25V | 450m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SKP202VR | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-skp202vr-datasheets-1934.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263-3 | 2nF | 45A | 200V | 95W Tc | N-Channel | 2000pF @ 25V | 53mOhm @ 20A, 10V | 4.5V @ 1mA | 45A Ta | 53 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI60R199CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi60r199cpxksa1-datasheets-1937.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 139W Tc | 16A | 51A | 0.199Ohm | 436 mJ | N-Channel | 1520pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 16A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBA1404PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfba1404ppbf-datasheets-1942.pdf | 40V | 206A | TO-273AA | 10.9982mm | 15mm | 5mm | Lead Free | 3 | 12 Weeks | 3.7MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 300W | 1 | FET General Purpose Power | 17 ns | 140ns | 26 ns | 72 ns | 206A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 95A | 650A | 480 mJ | 40V | N-Channel | 7360pF @ 25V | 3.7m Ω @ 95A, 10V | 4V @ 250μA | 206A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFP8N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp8n50p3-datasheets-1948.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 24 Weeks | 3 | Single | FET General Purpose Power | 13 ns | 29 ns | 8A | 30V | 500V | 180W Tc | 8A | N-Channel | 705pF @ 25V | 800m Ω @ 4A, 10V | 5V @ 1.5mA | 8A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75842P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75842p3-datasheets-1949.pdf | 150V | 43A | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | 43A | e3 | Tin (Sn) | 150V | Single | 230W | 1 | FET General Purpose Power | 13 ns | 53ns | 34 ns | 47 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 0.042Ohm | 150V | N-Channel | 2730pF @ 25V | 42m Ω @ 43A, 10V | 4V @ 250μA | 43A Tc | 175nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| DMNH4005SCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmnh4005sct-datasheets-1956.pdf | TO-220-3 | 18 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 165W Tc | N-Channel | 2846pF @ 20V | 4m Ω @ 20A, 10V | 3V @ 250μA | 150A Tc | 48nC @ 10V | 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N06S2L05AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-ipp100n06s2l05aksa2-datasheets-1958.pdf | TO-220-3 | Contains Lead | 3 | 10 Weeks | 3 | yes | LOGIC LEVEL COMPATIBLE | IPP100N06S2L-05 | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | 18 ns | 25ns | 24 ns | 98 ns | 100A | 20V | 55V | SILICON | 300W Tc | TO-220AB | 400A | 0.0059Ohm | 810 mJ | 55V | N-Channel | 5660pF @ 25V | 4.7m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 230nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FCP099N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | /files/onsemiconductor-fcp099n65s3-datasheets-1963.pdf | TO-220-3 | 12 Weeks | 1.8g | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 650V | 227W Tc | N-Channel | 2480pF @ 400V | 99m Ω @ 15A, 10V | 4.5V @ 3mA | 30A Tc | 61nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3711 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-2sk3711-datasheets-1845.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 70A | SILICON | SINGLE | SWITCHING | 60V | 60V | 130W Tc | 140A | 0.006Ohm | 468 mJ | N-Channel | 8000pF @ 10V | 6m Ω @ 35A, 10V | 4V @ 1mA | 70A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N100D2HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 125W Tc | N-Channel | 1020pF @ 25V | 6 Ω @ 1.5A, 0V | 4.5V @ 250μA | 3A Tj | 37.5nC @ 5V | Depletion Mode | 0V | ±20V |
