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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AOB270L | Alpha & Omega Semiconductor Inc. | $6.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 140A | 75V | 2.1W Ta 500W Tc | N-Channel | 10350pF @ 37.5V | 2.3m Ω @ 20A, 10V | 3V @ 250μA | 21.5A Ta 140A Tc | 215nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA22N60EL-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha22n60ele3-datasheets-1892.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 600V | 35W Tc | N-Channel | 1690pF @ 100V | 197mOhm @ 11A, 10V | 5V @ 250μA | 21A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH165N65S3R0-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | /files/onsemiconductor-fch165n65s3r0f155-datasheets-1893.pdf | TO-247-3 | 12 Weeks | yes | not_compliant | 650V | 154W Tc | N-Channel | 1500pF @ 400V | 165m Ω @ 9.5A, 10V | 4.5V @ 1.9mA | 19A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE808DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie808dft1e3-datasheets-7343.pdf | 10-PolarPAK® (L) | 27 Weeks | 10 | No | 1 | Single | 5.2W | 1 | 10-PolarPAK® (L) | 8.8nF | 25 ns | 55ns | 10 ns | 55 ns | 45A | 20V | 20V | 5.2W Ta 125W Tc | 1.6mOhm | N-Channel | 8800pF @ 10V | 1.6mOhm @ 25A, 10V | 3V @ 250μA | 60A Tc | 155nC @ 10V | 1.6 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB180N04S302ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipb180n04s302atma1-datasheets-1800.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 300W | 1 | R-PSSO-G6 | 180A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 720A | N-Channel | 14300pF @ 25V | 1.5m Ω @ 80A, 10V | 4V @ 230μA | 180A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2H5AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp80n06s2h5aksa2-datasheets-1908.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | Contains Lead | 3 | 14 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | 23 ns | 23ns | 22 ns | 48 ns | 80A | 20V | 55V | SILICON | 300W Tc | TO-220AB | 0.0055Ohm | 700 mJ | 55V | N-Channel | 4400pF @ 25V | 5.5m Ω @ 80A, 10V | 4V @ 230μA | 80A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STMFS5C609NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3700(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-3P-3, SC-65-3 | 15.9mm | 19mm | 4.8mm | Lead Free | 16 Weeks | 3 | No | Single | 150W | 1 | 30ns | 60 ns | 5A | 30V | 900V | 150W Tc | N-Channel | 1150pF @ 25V | 2.5 Ω @ 3A, 10V | 4V @ 1mA | 5A Ta | 28nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3711 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-2sk3711-datasheets-1845.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 70A | SILICON | SINGLE | SWITCHING | 60V | 60V | 130W Tc | 140A | 0.006Ohm | 468 mJ | N-Channel | 8000pF @ 10V | 6m Ω @ 35A, 10V | 4V @ 1mA | 70A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N100D2HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 125W Tc | N-Channel | 1020pF @ 25V | 6 Ω @ 1.5A, 0V | 4.5V @ 250μA | 3A Tj | 37.5nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R125CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r125cfd7atma1-datasheets-1854.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 92W Tc | N-Channel | 1503pF @ 400V | 125m Ω @ 7.8A, 10V | 4.5V @ 390μA | 18A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R150CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r150cfdatma1-datasheets-9715.pdf | TO-220-3 Full Pack | 18 Weeks | 650V | 34.7W Tc | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA102N15T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 150V | 455W Tc | N-Channel | 5220pF @ 25V | 18m Ω @ 51A, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1N120P | IXYS | $13.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 150°C | FET General Purpose Power | 1A | Single | 63W | 1200V | 1A | N-Channel | 1A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60EL-GE3 | Vishay Siliconix | $19.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp22n60elge3-datasheets-1855.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 227W Tc | N-Channel | 1690pF @ 100V | 197mOhm @ 11A, 10V | 5V @ 250μA | 21A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK11A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.35nF | 22ns | 15 ns | 11A | 30V | 550V | 45W Tc | N-Channel | 1350pF @ 25V | 630mOhm @ 5.5A, 10V | 4V @ 1mA | 11A Ta | 25nC @ 10V | 630 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12A53D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 22ns | 15 ns | 12A | 30V | 525V | 45W Tc | N-Channel | 1350pF @ 25V | 580m Ω @ 6A, 10V | 4V @ 1mA | 12A Ta | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL3107PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfs3107trlpbf-datasheets-0289.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 40 | 370W | 1 | 19 ns | 110ns | 100 ns | 99 ns | 230A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 370W Tc | 900A | 75V | N-Channel | 9370pF @ 50V | 3m Ω @ 140A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPB180N06S4H1ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb180n06s4h1atma2-datasheets-1794.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.31mm | 4.57mm | 9.45mm | 6 | 16 Weeks | 1.59999g | 7 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | 260 | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G6 | 30 ns | 5ns | 15 ns | 60 ns | 180A | 20V | 60V | SILICON | DRAIN | 250W Tc | 60V | N-Channel | 21900pF @ 25V | 1.7m Ω @ 100A, 10V | 4V @ 200μA | 180A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTA1N120P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1200V | 63W Tc | N-Channel | 550pF @ 25V | 20 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 17.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP05CN10NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp05cn10ngxksa1-datasheets-1806.pdf | 100V | 100A | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | Not Qualified | 28 ns | 42ns | 21 ns | 64 ns | 100A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 400A | 0.0054Ohm | 826 mJ | N-Channel | 12000pF @ 50V | 5.4m Ω @ 100A, 10V | 4V @ 250μA | 100A Tc | 181nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTY2N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp2n100p-datasheets-1987.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 86W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 29ns | 27 ns | 80 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 86W Tc | TO-252AA | 2A | 5A | 150 mJ | 1kV | N-Channel | 655pF @ 25V | 7.5 Ω @ 500mA, 10V | 4.5V @ 100μA | 2A Tc | 24.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTQ28N15P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtq28n15p-datasheets-1812.pdf | TO-3P-3, SC-65-3 | TO-3P | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL86063-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdbl86063f085-datasheets-1813.pdf | 8-PowerSFN | 19 Weeks | yes | compliant | 100V | 357W Tj | N-Channel | 5120pF @ 50V | 2.6m Ω @ 80A, 10V | 4V @ 250μA | 240A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3805L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf3805-datasheets-1672.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 11.3mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 300W | 1 | FET General Purpose Power | 150 ns | 20ns | 87 ns | 93 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 890A | 940 mJ | 55V | N-Channel | 7960pF @ 25V | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 290nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPA60R199CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipa60r199cpxksa1-datasheets-1821.pdf | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 34W | 1 | Not Qualified | 10 ns | 5ns | 50 ns | 16A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 34W Tc | TO-220AB | N-Channel | 1520pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 1.1mA | 16A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AUIRL1404ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirl1404zstrl-datasheets-1832.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 200W Tc | 160A | 790A | 0.0031Ohm | 490 mJ | N-Channel | 5080pF @ 25V | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 160A Tc | 110nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| FCP125N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcp125n60e-datasheets-1839.pdf | TO-220-3 | 12 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 29A | 600V | 3.5V | 278W Tc | N-Channel | 2990pF @ 380V | 125m Ω @ 14.5A, 10V | 3.5V @ 250μA | 29A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2LH5AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp80n06s2lh5aksa2-datasheets-1755.pdf | TO-220-3 | 3 | 14 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | SINGLE | 1 | 19 ns | 23ns | 22 ns | 75 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 0.0065Ohm | 700 mJ | N-Channel | 5000pF @ 25V | 5m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRF2903Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-auirf2903z-datasheets-1761.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Tin | No | Single | 290W | 1 | FET General Purpose Power | 24 ns | 100ns | 37 ns | 48 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 2V | 290W Tc | TO-220AB | 0.0024Ohm | 820 mJ | 30V | N-Channel | 6320pF @ 25V | 2 V | 2.4m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 240nC @ 10V | 10V | ±20V |
