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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA98N075T7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 200W | Single | 200W | 98A | 10mOhm | 75V | N-Channel | 98A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT019N08N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™5 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipt019n08n5atma1-datasheets-1688.pdf | 8-PowerSFN | 18 Weeks | 80V | 231W Tc | N-Channel | 9200pF @ 40V | 1.9m Ω @ 150A, 10V | 3.8V @ 159μA | 32A Ta 247A Tc | 127nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5H400NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5h400nlt1g-datasheets-0194.pdf | 8-PowerTDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 330A | 40V | 3.3W Ta 160W Tc | N-Channel | 7700pF @ 20V | 2V @ 250μA | 46A Ta 330A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1405ZS-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf1405zs7p-datasheets-1689.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 13 Weeks | 120A | 55V | 230W Tc | N-Channel | 5360pF @ 25V | 4.9m Ω @ 88A, 10V | 4V @ 150μA | 120A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA27N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 27A | 20V | N-Channel | 27A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA16N50P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 500V | 300W Tc | N-Channel | 2480pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 2.5mA | 16A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA75N10P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 100V | 360W Tc | N-Channel | 2250pF @ 25V | 25m Ω @ 37.5A, 10V | 5.5V @ 250μA | 75A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP8N85XM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp8n85xm-datasheets-1671.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 850V | 33W Tc | N-Channel | 654pF @ 25V | 850m Ω @ 4A, 10V | 5.5V @ 250μA | 8A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA42N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 200W Tc | 42A | 100A | 0.045Ohm | 400 mJ | N-Channel | 1880pF @ 25V | 45m Ω @ 21A, 10V | 4.5V @ 250μA | 42A Tc | 21nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTA10P15T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 150V | 83W Ta | P-Channel | 2210pF @ 25V | 350m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 36nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3805 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf3805-datasheets-1672.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | Lead Free | 3 | 16 Weeks | No SVHC | 3.3MOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | Single | 300W | 1 | FET General Purpose Power | 150 ns | 20ns | 87 ns | 93 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 2V | 300W Tc | TO-220AB | 890A | 940 mJ | 55V | N-Channel | 7960pF @ 25V | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 290nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TK13A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $7.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.35nF | 22ns | 15 ns | 13A | 30V | 450V | 45W Tc | N-Channel | 1350pF @ 25V | 460mOhm @ 6.5A, 10V | 4V @ 1mA | 13A Ta | 25nC @ 10V | 460 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R145CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA32N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp32n20t-datasheets-1409.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 24 Weeks | 72MOhm | Single | 200W | TO-263 (IXTA) | 1.76nF | 18ns | 31 ns | 55 ns | 32A | 20V | 200V | 200W Tc | 78mOhm | 200V | N-Channel | 1760pF @ 25V | 72mOhm @ 16A, 10V | 4.5V @ 250μA | 32A Tc | 38nC @ 10V | 72 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA50N20P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 200V | 360W Tc | N-Channel | 2720pF @ 25V | 60m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R199CPX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R199CPAATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r199cpaatma1-datasheets-1605.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 8 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 139W | 1 | Not Qualified | R-PSSO-G2 | 10 ns | 5ns | 50 ns | 16A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 139W Tc | 436 mJ | N-Channel | 1520pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 1.1mA | 16A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDMS8D8N15C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms8d8n15c-datasheets-1662.pdf | 8-PowerTDFN | 20 Weeks | yes | not_compliant | 150V | 2.7W Ta 132W Tc | N-Channel | 3600pF @ 75V | 8.8m Ω @ 45A, 10V | 4.5V @ 250μA | 12.2A Ta 85A Tc | 50nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP70N10SL16AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi70n10sl16aksa1-datasheets-1419.pdf | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 250W | 1 | R-PSFM-T3 | 70 ns | 250ns | 70A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | TO-220AB | 280A | 0.025Ohm | 700 mJ | N-Channel | 4540pF @ 25V | 16m Ω @ 50A, 10V | 2V @ 2mA | 70A Tc | 240nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFS450B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-irfs450b-datasheets-1663.pdf | TO-3P-3 Full Pack | 3 | 4 Weeks | 6.962g | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 96W | 1 | R-PSFM-T3 | 45 ns | 130ns | 125 ns | 260 ns | 9.6A | 30V | SILICON | ISOLATED | SWITCHING | 96W Tc | 38.4A | 0.39Ohm | 990 mJ | 500V | N-Channel | 3800pF @ 25V | 390m Ω @ 4.8A, 10V | 4V @ 250μA | 9.6A Tc | 113nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTU4N70X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | MOSFET (Metal Oxide) | TO-251-3 Stub Leads, IPak | 15 Weeks | compliant | 700V | 80W Tc | N-Channel | 386pF @ 25V | 850m Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 11.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1404 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-auirf1404-datasheets-1613.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | Single | 333W | 1 | FET General Purpose Power | 17 ns | 190ns | 33 ns | 46 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 2V | 333W Tc | TO-220AB | 808A | 0.004Ohm | 620 mJ | 40V | N-Channel | 5669pF @ 25V | 2 V | 4m Ω @ 121A, 10V | 4V @ 250μA | 160A Tc | 196nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTMFS5C404NLTT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c404nltt3g-datasheets-1618.pdf | 8-PowerTDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.9W Ta 200W Tc | N-Channel | 12168pF @ 25V | 0.75m Ω @ 50A, 10V | 2V @ 250μA | 181nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS244ZE3062AATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/infineontechnologies-bts244ze3062aatma2-datasheets-1621.pdf | 55V | 35A | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | Contains Lead | 18 Weeks | 1.59999g | 5 | Tin | No | Halogen Free | 1 | Single | 170W | PG-TO263-5-2 | 2.66nF | 15 ns | 70ns | 25 ns | 40 ns | 35A | 20V | 55V | 55V | 170W Tc | 13mOhm | 55V | N-Channel | 2660pF @ 25V | 13mOhm @ 19A, 10V | 2V @ 130μA | 35A Tc | 130nC @ 10V | Temperature Sensing Diode | 13 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| R6015KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-3P-3 Full Pack | 3 | 15 Weeks | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 60W Tc | 15A | 45A | 0.29Ohm | 284 mJ | N-Channel | 1050pF @ 25V | 290m Ω @ 6.5A, 10V | 5V @ 1mA | 15A Tc | 27.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS3306TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfs3306trl-datasheets-1635.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 230W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 76ns | 77 ns | 40 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | 620A | 0.0042Ohm | 60V | N-Channel | 4520pF @ 50V | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIE818DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sie818dft1e3-datasheets-2475.pdf | 10-PolarPAK® (L) | 4 | 14 Weeks | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | 1 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 30 ns | 150ns | 15 ns | 40 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 79A | 80A | 0.0095Ohm | 75V | N-Channel | 3200pF @ 38V | 9.5m Ω @ 16A, 10V | 3V @ 250μA | 60A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTA05N100-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1000V | 40W Tc | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 250μA | 750mA Tc | 7.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8407-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfs84077p-datasheets-1824.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 16 Weeks | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 40V | 231W Tc | 240A | N-Channel | 7437pF @ 25V | 1.3m Ω @ 100A, 10V | 3.9V @ 150μA | 240A Tc | 225nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA36N30P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 300V | 300W Tc | N-Channel | 2250pF @ 25V | 110m Ω @ 18A, 10V | 5.5V @ 250μA | 36A Tc | 70nC @ 10V | 10V | ±30V |
