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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTQ28N15P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtq28n15p-datasheets-1812.pdf | TO-3P-3, SC-65-3 | TO-3P | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL86063-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdbl86063f085-datasheets-1813.pdf | 8-PowerSFN | 19 Weeks | yes | compliant | 100V | 357W Tj | N-Channel | 5120pF @ 50V | 2.6m Ω @ 80A, 10V | 4V @ 250μA | 240A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3805L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf3805-datasheets-1672.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 11.3mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 300W | 1 | FET General Purpose Power | 150 ns | 20ns | 87 ns | 93 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 890A | 940 mJ | 55V | N-Channel | 7960pF @ 25V | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 290nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPA60R199CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipa60r199cpxksa1-datasheets-1821.pdf | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 34W | 1 | Not Qualified | 10 ns | 5ns | 50 ns | 16A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 34W Tc | TO-220AB | N-Channel | 1520pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 1.1mA | 16A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7880ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7880adpt1e3-datasheets-0004.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 20 ns | 14ns | 30 ns | 96 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 70A | 0.004Ohm | 30V | N-Channel | 5600pF @ 15V | 3m Ω @ 20A, 10V | 3V @ 250μA | 40A Tc | 125nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPP15N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spa15n60c3xksa1-datasheets-1597.pdf | 650V | 15A | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 8 Weeks | 3 | Halogen Free | Single | 156W | PG-TO220-3-1 | 1.66nF | 10 ns | 50 ns | 15A | 20V | 600V | 650V | 156W Tc | 250mOhm | 650V | N-Channel | 1660pF @ 25V | 280mOhm @ 9.4A, 10V | 3.9V @ 675μA | 15A Tc | 63nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTMFS5H600NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5h600nlt1g-datasheets-3412.pdf | 8-PowerTDFN, 5 Leads | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.3W Ta 160W Tc | N-Channel | 6680pF @ 30V | 1.3m Ω @ 50A, 10V | 2V @ 250μA | 35A Ta 250A Tc | 89nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C404NLTWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c404nltt3g-datasheets-1618.pdf | 8-PowerTDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.9W Ta 200W Tc | N-Channel | 12168pF @ 25V | 0.75m Ω @ 50A, 10V | 2V @ 250μA | 181nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP230N04T4M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Through Hole | -55°C~175°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtp230n04t4m-datasheets-1706.pdf | TO-220-3 Full Pack, Isolated Tab | 24 Weeks | compliant | 40V | 40W Tc | N-Channel | 7400pF @ 25V | 2.9m Ω @ 115A, 10V | 4V @ 250μA | 230A Tc | 140nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP130N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcp130n60-datasheets-1707.pdf | TO-220-3 | 3 | 12 Weeks | 1.8g | 130mOhm | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 16ns | 4 ns | 65 ns | 28A | 30V | SILICON | SWITCHING | 278W Tc | TO-220AB | 84A | 720 mJ | 600V | N-Channel | 3590pF @ 380V | 130m Ω @ 14A, 10V | 3.5V @ 250μA | 28A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB024N08N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb024n08n5atma1-datasheets-1713.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3.949996g | EAR99 | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 22 ns | 14ns | 15 ns | 46 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 214W Tc | 480A | 0.0024Ohm | 374 mJ | N-Channel | 8970pF @ 40V | 2.4m Ω @ 100A, 10V | 3.8V @ 154μA | 120A Tc | 123nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTMFS4H02NFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfs4h02nft1g-datasheets-1719.pdf | 8-PowerTDFN | Lead Free | 5 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 193A | Single | 25V | 3.13W Ta 83W Tc | N-Channel | 2652pF @ 12V | 1.4m Ω @ 30A, 10V | 2.1V @ 250μA | 37A Ta 193A Tc | 40.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R280E6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r280e6fksa1-datasheets-1721.pdf | TO-247-3 | 3 | yes | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 104W Tc | 40A | 0.28Ohm | 284 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 13.8A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTA42N25P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 250V | 300W Tc | N-Channel | 2300pF @ 25V | 84m Ω @ 21A, 10V | 5.5V @ 250μA | 42A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n80-datasheets-1682.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 40W | 1 | Not Qualified | R-PSSO-G2 | 19ns | 28 ns | 40 ns | 750mA | 20V | SILICON | DRAIN | SWITCHING | 40W Tc | TO-252AA | 0.75A | 3A | 100 mJ | 800V | N-Channel | 220pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 25μA | 750mA Tc | 8.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AUIRF1405ZS-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1405zs7p-datasheets-1689.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 55V | 230W Tc | N-Channel | 5360pF @ 25V | 4.9m Ω @ 88A, 10V | 4V @ 150μA | 120A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R165CFDAUMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl65r165cfdauma2-datasheets-1741.pdf | 4-PowerTSFN | 18 Weeks | 650V | 195W Tc | N-Channel | 2340pF @ 100V | 165m Ω @ 9.3A, 10V | 4.5V @ 900μA | 21.3A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C404NLAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c404nlaft1g-datasheets-9931.pdf | 8-PowerTDFN, 5 Leads | 40V | 200W Tc | N-Channel | 12168pF @ 25V | 0.67m Ω @ 50A, 10V | 2V @ 250μA | 370A Tc | 81nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C404NLWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c404nlaft1g-datasheets-9931.pdf | 8-PowerTDFN, 5 Leads | 40V | 200W Tc | N-Channel | 12168pF @ 25V | 0.67m Ω @ 50A, 10V | 2V @ 250μA | 370A Tc | 81nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC26N50C3X1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | 20 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC218N06N3X7SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc218n06n3x1sa2-datasheets-1683.pdf | 18 Weeks | yes | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp22n60ege3-datasheets-1850.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 3 | 18 Weeks | 6.000006g | Unknown | 180mOhm | 3 | AVALANCHE RATED | Tin | No | 3 | 1 | Single | 227W | 1 | FET General Purpose Power | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 227W Tc | TO-220AB | 56A | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFA14N60P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 600V | 300W Tc | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 2.5mA | 14A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP8N85XM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp8n85xm-datasheets-1671.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 850V | 33W Tc | N-Channel | 654pF @ 25V | 850m Ω @ 4A, 10V | 5.5V @ 250μA | 8A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA42N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 200W Tc | 42A | 100A | 0.045Ohm | 400 mJ | N-Channel | 1880pF @ 25V | 45m Ω @ 21A, 10V | 4.5V @ 250μA | 42A Tc | 21nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTA10P15T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 150V | 83W Ta | P-Channel | 2210pF @ 25V | 350m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 36nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3805 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf3805-datasheets-1672.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | Lead Free | 3 | 16 Weeks | No SVHC | 3.3MOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | Single | 300W | 1 | FET General Purpose Power | 150 ns | 20ns | 87 ns | 93 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 2V | 300W Tc | TO-220AB | 890A | 940 mJ | 55V | N-Channel | 7960pF @ 25V | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 290nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TK13A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $7.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.35nF | 22ns | 15 ns | 13A | 30V | 450V | 45W Tc | N-Channel | 1350pF @ 25V | 460mOhm @ 6.5A, 10V | 4V @ 1mA | 13A Ta | 25nC @ 10V | 460 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R145CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R145CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks |
