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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AUIRF1404 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-auirf1404-datasheets-1613.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | Single | 333W | 1 | FET General Purpose Power | 17 ns | 190ns | 33 ns | 46 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 2V | 333W Tc | TO-220AB | 808A | 0.004Ohm | 620 mJ | 40V | N-Channel | 5669pF @ 25V | 2 V | 4m Ω @ 121A, 10V | 4V @ 250μA | 160A Tc | 196nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFX44N80Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk44n80q3-datasheets-0999.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED | 3 | Single | 1.25kW | 1 | FET General Purpose Power | R-PSIP-T3 | 45 ns | 300ns | 63 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 130A | 0.19Ohm | 3500 mJ | 800V | N-Channel | 9840pF @ 25V | 190m Ω @ 22A, 10V | 6.5V @ 8mA | 44A Tc | 185nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPP100N12S305AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb100n12s305atma1-datasheets-7125.pdf | 3 | 14 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 100A | 400A | 0.0051Ohm | 1445 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA38N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 38A | 150V | N-Channel | 38A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta1n100p-datasheets-1536.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 24 ns | 55 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 50W Tc | 1A | 1.8A | 100 mJ | 1kV | N-Channel | 331pF @ 25V | 15 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 15.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDBL9403-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdbl9403f085-datasheets-1538.pdf | 8-PowerSFN | 8 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | Tin | not_compliant | 1 | Single | FET General Purpose Power | 42 ns | 73ns | 50 ns | 83 ns | 240A | 20V | 357W Tj | 40V | N-Channel | 12000pF @ 25V | 0.9m Ω @ 80A, 10V | 4V @ 250μA | 240A Tc | 188nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK22N50L | Alpha & Omega Semiconductor Inc. | $0.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 417W | 1 | TO-247 | 3.71nF | 22A | 30V | 500V | 417W Tc | N-Channel | 3710pF @ 25V | 260mOhm @ 11A, 10V | 4.5V @ 250μA | 22A Tc | 83nC @ 10V | 260 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB270AL | Alpha & Omega Semiconductor Inc. | $1.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 75V | 2.1W Ta 500W Tc | N-Channel | 10830pF @ 37.5V | 2.4m Ω @ 20A, 10V | 3.3V @ 250μA | 21.5A Ta 140A Tc | 206nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB280L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | FET General Purpose Power | 140A | Single | 80V | 2.1W Ta 333W Tc | N-Channel | 11135pF @ 40V | 2.2m Ω @ 20A, 10V | 3.4V @ 250μA | 20.5A Ta 140A Tc | 224nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R160P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r160p6xksa1-datasheets-1896.pdf | TO-220-3 | Lead Free | 18 Weeks | 3 | Halogen Free | PG-TO220-3 | 2.08nF | 12.5 ns | 7.6ns | 5.8 ns | 40 ns | 23.8A | 20V | 600V | 600V | 176W Tc | 144mOhm | N-Channel | 2080pF @ 100V | 160mOhm @ 9A, 10V | 4.5V @ 750μA | 23.8A Tc | 44nC @ 10V | 160 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB029N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdb029n06-datasheets-1563.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.762g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | GULL WING | Single | 231W | 1 | FET General Purpose Power | R-PSSO-G2 | 39 ns | 178ns | 33 ns | 54 ns | 193A | 20V | SILICON | DRAIN | SWITCHING | 231W Tc | 772A | 60V | N-Channel | 9815pF @ 25V | 3.1m Ω @ 75A, 10V | 4.5V @ 250μA | 120A Tc | 151nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPA15N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spa15n60c3xksa1-datasheets-1597.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 600V | 34W Tc | TO-220AB | 15A | 45A | 0.28Ohm | 460 mJ | N-Channel | 1660pF @ 25V | 280m Ω @ 9.4A, 10V | 3.9V @ 675μA | 15A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FCPF220N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcpf220n80-datasheets-1514.pdf | TO-220-3 Full Pack | 12 Weeks | 2.27g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | NOT SPECIFIED | Single | NOT SPECIFIED | 23A | 800V | 44W Tc | N-Channel | 4560pF @ 100V | 220m Ω @ 11.5A, 10V | 4.5V @ 2.3mA | 23A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA140N055T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 250W Ta | 140A | 350A | 0.0054Ohm | 600 mJ | N-Channel | 4760pF @ 25V | 5.4m Ω @ 50A, 10V | 4V @ 250μA | 140A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB0401NM5SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP120N06S4H1AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipp120n06s4h1aksa2-datasheets-1522.pdf | TO-220-3 | 3 | 14 Weeks | 6.000006g | 3 | yes | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 30 ns | 5ns | 15 ns | 60 ns | 120A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | TO-220AB | 480A | 0.0024Ohm | N-Channel | 21900pF @ 25V | 2.4m Ω @ 100A, 10V | 4V @ 200μA | 120A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTA05N100HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 40W Tc | 0.75A | 3A | 100 mJ | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 250μA | 750mA Tc | 7.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN24N90Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | SOT-227-4, miniBLOC | 4 | yes | AVALANCHE RATED | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PUFM-X4 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | 900V | 900V | 500W Tc | 0.45Ohm | N-Channel | 24A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6012ANJTL | ROHM Semiconductor | $5.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 10 Weeks | 3 | yes | No | e2 | Tin/Copper (Sn/Cu) | SINGLE | GULL WING | 260 | 3 | 1 | 10 | 1 | FET General Purpose Powers | R-PSSO-G2 | 30 ns | 30ns | 35 ns | 90 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100W Tc | 48A | 0.42Ohm | 9.6 mJ | 600V | N-Channel | 1300pF @ 25V | 420m Ω @ 6A, 10V | 4.5V @ 1mA | 12A Ta | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SPP11N60S5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp11n60s5xksa1-datasheets-1470.pdf | TO-220 | Lead Free | 12 Weeks | 125W | 1 | 130 ns | 35ns | 20 ns | 150 ns | 11A | 20V | 380mOhm | 600V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT29S50L | Alpha & Omega Semiconductor Inc. | $1.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 16 Weeks | 29A | 500V | 357W Tc | N-Channel | 1312pF @ 100V | 150m Ω @ 14.5A, 10V | 3.9V @ 250μA | 29A Tc | 26.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF29S50L | Alpha & Omega Semiconductor Inc. | $1.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 29A | 500V | 37.9W Tc | N-Channel | 1312pF @ 100V | 150m Ω @ 14.5A, 10V | 3.9V @ 250μA | 29A Tc | 26.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N10S305ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp100n10s305aksa1-datasheets-7409.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 300W | 1 | R-PSSO-G2 | 34 ns | 17ns | 20 ns | 60 ns | 100A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 400A | 0.0048Ohm | N-Channel | 11570pF @ 25V | 4.8m Ω @ 100A, 10V | 4V @ 240μA | 100A Tc | 176nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FCMT099N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fcmt099n65s3-datasheets-1488.pdf | 4-PowerTSFN | 33 Weeks | 449.03225mg | ACTIVE (Last Updated: 1 day ago) | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 650V | 227W Tc | N-Channel | 2270pF @ 400V | 99m Ω @ 15A, 10V | 4.5V @ 3mA | 30A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R4N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n100p-datasheets-1347.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 35ns | 28 ns | 65 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 63W Tc | 3A | 100 mJ | 1kV | N-Channel | 450pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 50μA | 1.4A Tc | 17.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTMFS4H02NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4h02nt1g-datasheets-1495.pdf | 8-PowerTDFN | Lead Free | 5 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 193A | Single | 25V | 3.13W Ta 83W Tc | N-Channel | 2651pF @ 12V | 1.4m Ω @ 30A, 10V | 2.1V @ 250μA | 37A Ta 193A Tc | 38.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPA11N60CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spa11n60cfdxksa1-datasheets-1425.pdf | TO-220-3 Full Pack | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 600V | 600V | 33W Tc | TO-220AB | 11A | 28A | 0.44Ohm | 340 mJ | N-Channel | 1200pF @ 25V | 440m Ω @ 7A, 10V | 5V @ 1.9mA | 11A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHG14N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihg14n50dge3-datasheets-5961.pdf | TO-247-3 | 3 | 13 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 16 ns | 27ns | 26 ns | 29 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | 208W Tc | TO-247AC | 0.4Ohm | 56 mJ | 500V | N-Channel | 1144pF @ 100V | 400m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPC218N06L3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc218n06l3x1sa1-datasheets-1431.pdf | Die | Lead Free | 12 Weeks | EAR99 | Halogen Free | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 2.2V @ 196μA | 3A Tj | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI90R500C3XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi90r500c3xksa2-datasheets-1506.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | 900V | 156W Tc | N-Channel | 1700pF @ 100V | 500m Ω @ 6.6A, 10V | 3.5V @ 740μA | 11A Tc | 68nC @ 10V | 10V | ±20V |
