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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT26F120B2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt26f120b2-datasheets-1331.pdf | 1.2kV | 26A | TO-247-3 Variant | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 22 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1 | FET General Purpose Power | 50 ns | 31ns | 48 ns | 170 ns | 27A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1135W Tc | 0.58Ohm | 1.2kV | N-Channel | 9670pF @ 25V | 650m Ω @ 14A, 10V | 5V @ 2.5mA | 27A Tc | 300nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTP8N65X2M | IXYS | $2.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n65x2m-datasheets-1333.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 32W Tc | N-Channel | 800pF @ 25V | 550m Ω @ 4A, 10V | 5V @ 250μA | 4A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP1R6N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/ixys-ixty1r6n100d2-datasheets-1843.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 1.6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 100W Tc | TO-220AB | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 1.6A Tc | 27nC @ 5V | Depletion Mode | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU01N100 | IXYS | $2.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixty01n100-datasheets-0995.pdf | 1kV | 100mA | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | unknown | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | 12ns | 28 ns | 28 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 25W Tc | 0.1A | 0.4A | 1kV | N-Channel | 54pF @ 25V | 80 Ω @ 100mA, 10V | 4.5V @ 25μA | 100mA Tc | 6.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTMTS0D7N04CTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmts0d7n04ctxg-datasheets-1346.pdf | 8-PowerTDFN | 24 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 4.9W Ta 205W Tc | N-Channel | 9230pF @ 25V | 670μ Ω @ 50A, 10V | 4V @ 250μA | 65A Ta 420A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP1R4N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n100p-datasheets-1347.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 35ns | 28 ns | 65 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 63W Tc | TO-220AB | 3A | 100 mJ | 1kV | N-Channel | 450pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 50μA | 1.4A Tc | 17.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| APT8014L2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8014l2fllg-datasheets-1348.pdf | 800V | 52A | TO-264-3, TO-264AA | Lead Free | 24 Weeks | 3 | No | 264 MAX™ [L2] | 7.24nF | 20 ns | 19ns | 15 ns | 69 ns | 52A | 30V | 800V | N-Channel | 7238pF @ 25V | 160mOhm @ 26A, 10V | 5V @ 5mA | 52A Tc | 285nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN95H2D2HCTI | Diodes Incorporated | $1.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn95h2d2hcti-datasheets-1354.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 950V | 950V | 40W Tc | TO-220AB | 6A | 24A | 360 mJ | N-Channel | 1487pF @ 25V | 2.2 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 20.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOB282L | Alpha & Omega Semiconductor Inc. | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 80V | 2.1W Ta 272.5W Tc | N-Channel | 7765pF @ 40V | 3.2m Ω @ 20A, 10V | 3.5V @ 250μA | 18.5A Ta 105A Tc | 178nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT1201R5BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt1201r5bvfrg-datasheets-1237.pdf | 1.2kV | 10A | TO-247-3 | Lead Free | No | 370W | 1 | TO-247 [B] | 4.44nF | 12 ns | 10ns | 14 ns | 50 ns | 10A | 30V | 1200V | N-Channel | 4440pF @ 25V | 1.5Ohm @ 5A, 10V | 4V @ 1mA | 10A Tc | 285nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT10035JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10035jll-datasheets-1238.pdf | 1kV | 28A | SOT-227-4, miniBLOC | Lead Free | 19 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | 520W | 1 | ISOTOP® | 5.185nF | 12 ns | 10ns | 9 ns | 36 ns | 25A | 30V | 1000V | 520W Tc | N-Channel | 5185pF @ 25V | 350mOhm @ 14A, 10V | 5V @ 2.5mA | 25A Tc | 186nC @ 10V | 350 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1404ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1404z-datasheets-3786.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 2 | 16 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 110ns | 58 ns | 36 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 480 mJ | 40V | N-Channel | 4340pF @ 25V | 3.7m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPI90R500C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi90r500c3xksa1-datasheets-1249.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | yes | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 156W Tc | 11A | 24A | 0.5Ohm | 388 mJ | N-Channel | 1700pF @ 100V | 500m Ω @ 6.6A, 10V | 3.5V @ 740μA | 11A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| APT32F120J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-apt32f120j-datasheets-1254.pdf | 1.2kV | 32A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 22 Weeks | 30.000004g | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED, HIGH RELIABILITY | Tin | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 960W | 1 | 100 ns | 60ns | 90 ns | 315 ns | 33A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 960W Tc | 0.32Ohm | 2700 mJ | 1.2kV | N-Channel | 18200pF @ 25V | 320m Ω @ 25A, 10V | 5V @ 2.5mA | 33A Tc | 560nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| SPA11N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spa11n65c3xksa1-datasheets-1256.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | yes | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 33W Tc | TO-220AB | 11A | 33A | 0.38Ohm | 340 mJ | N-Channel | 1200pF @ 25V | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 11A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| APL502B2G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apl502lg-datasheets-4892.pdf | 500V | 58A | TO-247-3 Variant | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 3 | EAR99 | Gold, Tin | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 1 | 730W | 1 | 13 ns | 27ns | 16 ns | 56 ns | 58A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 730W Tc | 0.09Ohm | 500V | N-Channel | 9000pF @ 25V | 90m Ω @ 29A, 12V | 4V @ 2.5mA | 58A Tc | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STD12N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sti12n65m5-datasheets-5764.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 430mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD12 | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 22.6 ns | 9.5ns | 24 ns | 15.6 ns | 8.5A | 25V | SILICON | DRAIN | SWITCHING | 4V | 70W Tc | 650V | N-Channel | 900pF @ 100V | 430m Ω @ 4.3A, 10V | 5V @ 250μA | 8.5A Tc | 22nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| IXTP38N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 38A | 150V | N-Channel | 38A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC19N80C3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC430N25NSFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™, StrongIRFET™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 39 Weeks | 250V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30M30JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30m30jll-datasheets-1285.pdf | 300V | 88A | SOT-227-4, miniBLOC | Lead Free | 5 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | 520W | 520W | 1 | ISOTOP® | 7.03nF | 15 ns | 19ns | 9 ns | 35 ns | 88A | 30V | 300V | N-Channel | 7030pF @ 25V | 30mOhm @ 44A, 10V | 5V @ 2.5mA | 88A | 140nC @ 10V | 30 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8407 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfsl8407-datasheets-1206.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 16 Weeks | No SVHC | 3 | EAR99 | Tin | No | IRFS8407 | 1 | Single | 230W | FET General Purpose Power | 19 ns | 70ns | 53 ns | 78 ns | 195A | 20V | 3V | 230W Tc | 40V | N-Channel | 7330pF @ 25V | 3 V | 1.8m Ω @ 100A, 10V | 4V @ 150μA | 195A Tc | 225nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| APL602B2G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apl602lg-datasheets-1199.pdf | 600V | 49A | TO-247-3 Variant | Lead Free | 3 | 23 Weeks | 3 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 730W | 1 | FET General Purpose Power | 13 ns | 27ns | 16 ns | 56 ns | 49A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 730W Tc | N-Channel | 9000pF @ 25V | 125m Ω @ 24.5A, 12V | 4V @ 2.5mA | 49A Tc | 12V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| TK13E25D,S1X(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 12 Weeks | 3 | No | FET General Purpose Power | 40ns | 20 ns | 13A | 20V | Single | 250V | 102W Tc | N-Channel | 1100pF @ 100V | 250m Ω @ 6.5A, 10V | 3.5V @ 1mA | 13A Ta | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTB30N100L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtb30n100l-datasheets-1299.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 800W | 1 | FET General Purpose Power | Not Qualified | 70ns | 78 ns | 100 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 800W Tc | 70A | 0.45Ohm | 2000 mJ | 1kV | N-Channel | 13200pF @ 25V | 450m Ω @ 500mA, 20V | 5V @ 250μA | 30A Tc | 545nC @ 20V | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APT30M40JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30m40jvfr-datasheets-1198.pdf | 300V | 70A | SOT-227-4, miniBLOC | Lead Free | 4 | 23 Weeks | 4 | yes | EAR99 | HIGH VOLTAGE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 450W | 1 | FET General Purpose Power | Not Qualified | 16 ns | 20ns | 4 ns | 48 ns | 70A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 450W Tc | 280A | 2500 mJ | N-Channel | 10200pF @ 25V | 40m Ω @ 500mA, 10V | 4V @ 2.5mA | 70A Tc | 425nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APL602LG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apl602lg-datasheets-1199.pdf | 600V | 49A | TO-264-3, TO-264AA | Lead Free | 3 | 23 Weeks | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 730W | 1 | FET General Purpose Power | R-PSFM-T3 | 13 ns | 27ns | 16 ns | 56 ns | 49A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 730W Tc | 3000 mJ | N-Channel | 9000pF @ 25V | 125m Ω @ 24.5A, 12V | 4V @ 2.5mA | 49A Tc | 12V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STE70NM60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Chassis Mount, Screw | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste70nm60-datasheets-1201.pdf | 600V | 70A | ISOTOP | Lead Free | 4 | 12 Weeks | No SVHC | 55MOhm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | STE70 | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 55 ns | 95ns | 76 ns | 70A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 600W Tc | 280A | 600V | N-Channel | 7300pF @ 25V | 55m Ω @ 30A, 10V | 5V @ 250μA | 70A Tc | 266nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTP27N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 27A | 200V | N-Channel | 27A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN30N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn30n120p-datasheets-1204.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 4 | yes | UL RECOGNIZED, AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | 60ns | 56 ns | 95 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 890W Tc | 75A | 0.35Ohm | 2000 mJ | 1.2kV | N-Channel | 19000pF @ 25V | 350m Ω @ 500mA, 10V | 6.5V @ 1mA | 30A Tc | 310nC @ 10V | 10V | ±30V |
