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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDBL0120N40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdbl0120n40-datasheets-1230.pdf | 8-PowerSFN | Lead Free | 8 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 245 | Single | NOT SPECIFIED | 240A | 40V | 300W Tj | N-Channel | 7735pF @ 25V | 1.2m Ω @ 80A, 10V | 4V @ 250μA | 240A Tc | 107nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK3N250L | IXYS | $64.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-264-3, TO-264AA | 24 Weeks | compliant | 2500V | 417W Tc | N-Channel | 5400pF @ 25V | 10 Ω @ 1.5A, 10V | 5V @ 1mA | 3A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50M50JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m50jll-datasheets-1235.pdf | 500V | 71A | SOT-227-4, miniBLOC | Lead Free | 4 | 23 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 24 ns | 18ns | 10 ns | 55 ns | 71A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 595W Tc | 0.05Ohm | 3200 mJ | N-Channel | 10550pF @ 25V | 50m Ω @ 35.5A, 10V | 5V @ 5mA | 71A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT30M40JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30m40jvfr-datasheets-1198.pdf | 300V | 70A | SOT-227-4, miniBLOC | Lead Free | 4 | 23 Weeks | 4 | yes | EAR99 | HIGH VOLTAGE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 450W | 1 | FET General Purpose Power | Not Qualified | 16 ns | 20ns | 4 ns | 48 ns | 70A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 450W Tc | 280A | 2500 mJ | N-Channel | 10200pF @ 25V | 40m Ω @ 500mA, 10V | 4V @ 2.5mA | 70A Tc | 425nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APL602LG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apl602lg-datasheets-1199.pdf | 600V | 49A | TO-264-3, TO-264AA | Lead Free | 3 | 23 Weeks | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 730W | 1 | FET General Purpose Power | R-PSFM-T3 | 13 ns | 27ns | 16 ns | 56 ns | 49A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 730W Tc | 3000 mJ | N-Channel | 9000pF @ 25V | 125m Ω @ 24.5A, 12V | 4V @ 2.5mA | 49A Tc | 12V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STE70NM60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Chassis Mount, Screw | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste70nm60-datasheets-1201.pdf | 600V | 70A | ISOTOP | Lead Free | 4 | 12 Weeks | No SVHC | 55MOhm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | STE70 | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 55 ns | 95ns | 76 ns | 70A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 600W Tc | 280A | 600V | N-Channel | 7300pF @ 25V | 55m Ω @ 30A, 10V | 5V @ 250μA | 70A Tc | 266nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTP27N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 27A | 200V | N-Channel | 27A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN30N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn30n120p-datasheets-1204.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 4 | yes | UL RECOGNIZED, AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | 60ns | 56 ns | 95 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 890W Tc | 75A | 0.35Ohm | 2000 mJ | 1.2kV | N-Channel | 19000pF @ 25V | 350m Ω @ 500mA, 10V | 6.5V @ 1mA | 30A Tc | 310nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| R5013ANJTL | ROHM Semiconductor | $8.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | yes | No | e2 | Tin/Copper (Sn/Cu) | SINGLE | GULL WING | 260 | 3 | 1 | 10 | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 32ns | 30 ns | 90 ns | 13A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 100W Tc | 52A | N-Channel | 1300pF @ 25V | 380m Ω @ 6.5A, 10V | 4.5V @ 1mA | 13A Ta | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| AUIRFSL8407 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfsl8407-datasheets-1206.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 16 Weeks | No SVHC | 3 | EAR99 | No | 1 | Single | 230W | FET General Purpose Power | 19 ns | 70ns | 53 ns | 78 ns | 195A | 20V | 230W Tc | 40V | N-Channel | 7330pF @ 25V | 3 V | 2m Ω @ 100A, 10V | 4V @ 150μA | 195A Tc | 225nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BTS247ZE3062AATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-bts247ze3062aatma2-datasheets-1177.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | Contains Lead | 18 Weeks | 1.59999g | 5 | Tin | Halogen Free | 1 | Single | 120W | 1 | PG-TO263-5-2 | 1.73nF | 15 ns | 30ns | 20 ns | 30 ns | 33A | 20V | 55V | 55V | 120W Tc | 18mOhm | 55V | N-Channel | 1730pF @ 25V | 18mOhm @ 12A, 10V | 2V @ 90μA | 33A Tc | 90nC @ 10V | Temperature Sensing Diode | 18 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTN240N075L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Chassis Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 28 Weeks | compliant | 75V | 735W Tc | N-Channel | 19000pF @ 25V | 7m Ω @ 120A, 10V | 4.5V @ 3mA | 225A Tc | 546nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT6013LLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6013b2llg-datasheets-0911.pdf | 600V | 43A | TO-264-3, TO-264AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 565W | 1 | R-PSFM-T3 | 11 ns | 14ns | 8 ns | 27 ns | 43A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 565W Tc | 2500 mJ | N-Channel | 5630pF @ 25V | 130m Ω @ 21.5A, 10V | 5V @ 2.5mA | 43A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTX3N250L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 24 Weeks | compliant | 2500V | 417W Tc | N-Channel | 5400pF @ 25V | 10 Ω @ 1.5A, 10V | 5V @ 1mA | 3A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMTS001N06CLTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMTS001N06CTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmts001n06ctxg-datasheets-1185.pdf | 8-PowerTDFN | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 5W Ta 244W Tc | N-Channel | 8705pF @ 30V | 910m Ω @ 50A, 10V | 4V @ 250μA | 53.7A Ta 376A Tc | 113nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT8020JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8020jfll-datasheets-1187.pdf | 800V | 33A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 520W | 520W | 1 | ISOTOP® | 5.2nF | 12 ns | 14ns | 10 ns | 39 ns | 33A | 30V | 800V | N-Channel | 5200pF @ 25V | 220mOhm @ 16.5A, 10V | 5V @ 2.5mA | 33A | 195nC @ 10V | 220 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN40N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn40n110p-datasheets-1188.pdf | SOT-227-4, miniBLOC | 4 | 24 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | 55ns | 54 ns | 110 ns | 34A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1100V | 890W Tc | 100A | 0.26Ohm | 2000 mJ | 1.1kV | N-Channel | 19000pF @ 25V | 260m Ω @ 20A, 10V | 6.5V @ 1mA | 34A Tc | 310nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTN79N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | SOT-227-4, miniBLOC | Contains Lead | 4 | 18 Weeks | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 79A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 400W Tc | 340A | 0.025Ohm | N-Channel | 4V @ 20mA | 85A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7737L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf7737l2tr-datasheets-1192.pdf | DirectFET™ Isometric L6 | Lead Free | 7 | 16 Weeks | 13 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | BOTTOM | 83W | 1 | FET General Purpose Power | R-XBCC-N7 | 12 ns | 19ns | 14 ns | 22 ns | 31A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.3W Ta 83W Tc | 624A | 386 mJ | 40V | N-Channel | 5469pF @ 25V | 1.9m Ω @ 94A, 10V | 4V @ 150μA | 31A Ta 156A Tc | 134nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTF2N300P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtf2n300p3-datasheets-1168.pdf | ISOPLUSi5-Pak™ | 28 Weeks | compliant | 3000V | 160W Tc | N-Channel | 1890pF @ 25V | 21 Ω @ 1A, 10V | 5V @ 250μA | 1.6A Tc | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK60N55Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx60n55q2-datasheets-0940.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 88MOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | Not Qualified | 22 ns | 14ns | 9 ns | 57 ns | 60A | 30V | SILICON | DRAIN | 735W Tc | 240A | 4000 mJ | 550V | N-Channel | 7300pF @ 25V | 88m Ω @ 30A, 10V | 4.5V @ 8mA | 60A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APT60M75L2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt60m75l2llg-datasheets-1170.pdf | 600V | 73A | TO-264-3, TO-264AA | Lead Free | 3 | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | 23 ns | 19ns | 8 ns | 55 ns | 73A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 893W Tc | 292A | 0.075Ohm | N-Channel | 8930pF @ 25V | 75m Ω @ 36.5A, 10V | 5V @ 5mA | 73A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| APT8014L2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8014l2llg-datasheets-1171.pdf | 800V | 52A | TO-264-3, TO-264AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 730W | 1 | 264 MAX™ [L2] | 9nF | 20 ns | 19ns | 15 ns | 69 ns | 52A | 30V | 800V | N-Channel | 7238pF @ 25V | 140mOhm @ 26A, 10V | 5V @ 5mA | 52A Tc | 285nC @ 10V | 90 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFE44N50QD3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfe48n50qd3-datasheets-1077.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 39A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 176A | 0.12Ohm | 2500 mJ | 500V | N-Channel | 8000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 39A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APT80M60J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt80m60j-datasheets-1173.pdf | 600V | 80A | SOT-227-4, miniBLOC | Lead Free | 4 | 19 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 960W | 1 | 135 ns | 155ns | 125 ns | 410 ns | 84A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 960W Tc | 0.06Ohm | 3350 mJ | N-Channel | 24000pF @ 25V | 55m Ω @ 60A, 10V | 5V @ 5mA | 84A Tc | 600nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| MMIX1F44N100Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f44n100q3-datasheets-1175.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | Lead Free | 21 | 30 Weeks | 24 | DUAL | GULL WING | 21 | Single | 1 | FET General Purpose Power | R-PDSO-G21 | 48 ns | 30ns | 28 ns | 66 ns | 30A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 694W Tc | 110A | 4000 mJ | 1kV | N-Channel | 13600pF @ 25V | 245m Ω @ 22A, 10V | 6.5V @ 8mA | 30A Tc | 264nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| MMIX1F40N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f40n110p-datasheets-1158.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 30 Weeks | 24 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 1 | FET General Purpose Power | R-PDSO-G21 | 53 ns | 110 ns | 24A | 40V | SILICON | ISOLATED | SWITCHING | 1100V | 1100V | 500W Tc | 100A | 0.29Ohm | 2000 mJ | N-Channel | 19000pF @ 25V | 290m Ω @ 20A, 10V | 6.5V @ 1mA | 24A Tc | 310nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT30M36JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30m36jfll-datasheets-1159.pdf | 300V | 76A | SOT-227-4, miniBLOC | Lead Free | 4 | No | 463W | 463W | 1 | ISOTOP® | 6.48nF | 15 ns | 28ns | 5 ns | 29 ns | 76A | 30V | 300V | N-Channel | 6480pF @ 25V | 36mOhm @ 38A, 10V | 5V @ 2.5mA | 76A | 115nC @ 10V | 36 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN30N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn30n110p-datasheets-1160.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 695W | 1 | FET General Purpose Power | Not Qualified | 48ns | 52 ns | 83 ns | 25A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1100V | 695W Tc | 75A | 0.36Ohm | 1500 mJ | 1.1kV | N-Channel | 13600pF @ 25V | 360m Ω @ 15A, 10V | 6.5V @ 1mA | 25A Tc | 235nC @ 10V | 10V | ±30V |
