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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT5014BLLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt5014bllg-datasheets-0693.pdf | 500V | 35A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 23 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | Tin | No | e1 | SINGLE | 3 | 403W | 1 | R-PSFM-T3 | 11 ns | 6ns | 3 ns | 23 ns | 35A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 403W Tc | TO-247AD | N-Channel | 3261pF @ 25V | 140m Ω @ 17.5A, 10V | 5V @ 1mA | 35A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTR90P20P | IXYS | $20.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr90p20p-datasheets-0695.pdf | ISOPLUS247™ | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 53A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 312W Tc | 270A | 0.048Ohm | P-Channel | 12000pF @ 25V | 48m Ω @ 45A, 10V | 4V @ 1mA | 53A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTT38N30L2HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 300V | 400W Tc | N-Channel | 7200pF @ 25V | 100m Ω @ 19A, 10V | 4.5V @ 250μA | 38A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT8052BLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8052bllg-datasheets-0678.pdf | 800V | 15A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 298W | 298W | 1 | TO-247 [B] | 2.035nF | 9 ns | 6ns | 7 ns | 23 ns | 15A | 30V | 800V | N-Channel | 2035pF @ 25V | 520mOhm @ 7.5A, 10V | 5V @ 1mA | 15A Tc | 75nC @ 10V | 520 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APT8052BFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8052bfllg-datasheets-0679.pdf | 800V | 15A | TO-247-3 | Lead Free | 5 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 298W | 298W | 1 | 9 ns | 6ns | 7 ns | 23 ns | 15A | 30V | N-Channel | 2035pF @ 25V | 520m Ω @ 7.5A, 10V | 5V @ 1mA | 15A Tc | 75nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STY140NS10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sty140ns10-datasheets-0680.pdf | 100V | 140A | TO-247-3 | Lead Free | 3 | No SVHC | 247 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | NOT SPECIFIED | STY140 | 3 | Single | NOT SPECIFIED | 450W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 150ns | 270 ns | 140A | 20V | SILICON | SWITCHING | 4V | 450W Tc | 560A | 2900 mJ | 100V | N-Channel | 12600pF @ 25V | 11m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 600nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IGT40R070D1E8220ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolGaN™ | Surface Mount | 0°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-igt40r070d1e8220atma1-datasheets-0682.pdf | 8-PowerSFN | 12 Weeks | 400V | 125W Tc | N-Channel | 382pF @ 320V | 1.6V @ 2.6mA | 31A Tc | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP27N60K | Vishay Siliconix | $2.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp27n60kpbf-datasheets-5402.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 15 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 500W | TO-247-3 | 4.66nF | 27 ns | 110ns | 38 ns | 43 ns | 27A | 30V | 600V | 500W Tc | 220mOhm | 600V | N-Channel | 4660pF @ 25V | 5 V | 220mOhm @ 16A, 10V | 5V @ 250μA | 27A Tc | 180nC @ 10V | 220 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFT12N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixft10n100-datasheets-4440.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 33ns | 32 ns | 62 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | 48A | 1kV | N-Channel | 4000pF @ 25V | 1.05 Ω @ 6A, 10V | 4.5V @ 4mA | 12A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXKT70N60C5-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | TO-268 | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX44N50Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfx48n50q-datasheets-2086.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 22ns | 10 ns | 75 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 176A | 0.12Ohm | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 44A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTA4N150HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1500V | 280W Tc | N-Channel | 1576pF @ 25V | 6 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 44.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK420N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfx420n10t-datasheets-7144.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 20 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 420A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1670W Tc | 1000A | 0.0026Ohm | 5000 mJ | N-Channel | 47000pF @ 25V | 2.6m Ω @ 60A, 10V | 5V @ 8mA | 420A Tc | 670nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APT8056BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8056bvrg-datasheets-0689.pdf | 800V | 16A | TO-247-3 | Lead Free | 21 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 780W | 370W | 1 | TO-247 [B] | 8.59nF | 12 ns | 10ns | 10 ns | 50 ns | 16A | 30V | 800V | N-Channel | 4440pF @ 25V | 560mOhm @ 500mA, 10V | 4V @ 1mA | 16A Tc | 275nC @ 10V | 150 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT30M70BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30m70bvrg-datasheets-1505.pdf | 300V | 48A | TO-247-3 | Lead Free | 3 | 34 Weeks | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 370W | 1 | R-PSFM-T3 | 14 ns | 21ns | 10 ns | 57 ns | 48A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 370W Tc | TO-247AD | 0.07Ohm | N-Channel | 5870pF @ 25V | 70m Ω @ 500mA, 10V | 4V @ 1mA | 48A Tc | 225nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APT20M34BLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 200V | 74A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 403W | 1 | TO-247 [B] | 3.66nF | 10 ns | 27ns | 4 ns | 25 ns | 74A | 30V | 200V | N-Channel | 3660pF @ 25V | 34mOhm @ 37A, 10V | 5V @ 1mA | 74A Tc | 60nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH14N100 | IXYS | $6.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth14n100-datasheets-0674.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | No SVHC | 820mOhm | 3 | yes | EAR99 | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 21ns | 36 ns | 80 ns | 14A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 4.5V | 360W Tc | TO-247AD | 56A | 1kV | N-Channel | 5650pF @ 25V | 4.5 V | 820m Ω @ 500mA, 10V | 4.5V @ 250μA | 14A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFT320N10T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixft320n10t2-datasheets-0675.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 3 | yes | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 320A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1000W Tc | 800A | 1500 mJ | N-Channel | 26000pF @ 25V | 3.5m Ω @ 100A, 10V | 4V @ 250μA | 320A Tc | 430nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APT6025BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6025bvrg-datasheets-0677.pdf | 600V | 25A | TO-247-3 | Lead Free | 5 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 370W | 1 | TO-247 [B] | 5.16nF | 14 ns | 12ns | 10 ns | 55 ns | 25A | 30V | 600V | N-Channel | 5160pF @ 25V | 250mOhm @ 500mA, 10V | 4V @ 1mA | 25A Tc | 275nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR12N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 18 Weeks | 1200V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R024CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r024cfd7xksa1-datasheets-0654.pdf | TO-247-3 | 18 Weeks | 650V | 320W Tc | N-Channel | 7268pF @ 400V | 24m Ω @ 42.4A, 10V | 4.5V @ 2.12mA | 77A Tc | 183nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA230N075T2 | IXYS | $24.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp230n075t2-datasheets-0641.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 230A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 480W Tc | 700A | 0.0042Ohm | 850 mJ | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 178nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFH44N50Q3 | IXYS | $16.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh44n50q3-datasheets-0657.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | 3 | 20 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 830W | 1 | FET General Purpose Power | 30 ns | 250ns | 37 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 0.14Ohm | 1500 mJ | 500V | N-Channel | 4800pF @ 25V | 140m Ω @ 22A, 10V | 6.5V @ 4mA | 44A Tc | 93nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFX12N90Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx12n90q-datasheets-0659.pdf | TO-247-3 | 3 | 3 | yes | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 23ns | 15 ns | 40 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 48A | 0.9Ohm | 900V | N-Channel | 2900pF @ 25V | 900m Ω @ 6A, 10V | 5.5V @ 4mA | 12A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SCTW35N65G2VAG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~200°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sctw35n65g2vag-datasheets-0660.pdf | TO-247-3 | compliant | 650V | 240W Tc | N-Channel | 1370pF @ 400V | 67m Ω @ 20A, 20V | 5V @ 1mA | 45A Tc | 73nC @ 20V | 18V 20V | +22V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT6025BLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6025bllg-datasheets-0661.pdf | 600V | 24A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 325W | 325W | 1 | TO-247 [B] | 2.91nF | 18 ns | 19ns | 18 ns | 30 ns | 24A | 30V | 600V | N-Channel | 2910pF @ 25V | 250mOhm @ 12A, 10V | 5V @ 1mA | 24A Tc | 65nC @ 10V | 250 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP230N075T2 | IXYS | $6.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfa230n075t2-datasheets-0343.pdf | TO-220-3 | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 230A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 480W Tc | TO-220AB | 700A | 0.0042Ohm | 850 mJ | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 1mA | 230A Tc | 178nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||
| SIHG28N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg28n65efge3-datasheets-0663.pdf | TO-247-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 250W Tc | TO-247AC | 87A | 0.117Ohm | 427 mJ | N-Channel | 3249pF @ 100V | 117m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 146nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT44N50Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh44n50q3-datasheets-0657.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 830W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 250ns | 37 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 0.14Ohm | 1500 mJ | 500V | N-Channel | 4800pF @ 25V | 140m Ω @ 22A, 10V | 6.5V @ 4mA | 44A Tc | 93nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTX170P10P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx170p10p-datasheets-0670.pdf | TO-247-3 | 3 | 28 Weeks | 247 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 890W | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 170A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 890W Tc | 510A | 0.012Ohm | 3500 mJ | -100V | P-Channel | 12600pF @ 25V | 12m Ω @ 500mA, 10V | 4V @ 1mA | 170A Tc | 240nC @ 10V | 10V | ±20V |
