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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Number of Drivers | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT75F50B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt75f50l-datasheets-0720.pdf | TO-247-3 Variant | 23 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 1.04kW | 1 | T-MAX™ [B2] | 11.6nF | 45 ns | 55ns | 39 ns | 120 ns | 75A | 30V | 500V | 1040W Tc | N-Channel | 11600pF @ 25V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 75A Tc | 290nC @ 10V | 75 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTK600N04T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SupreMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx600n04t2-datasheets-0723.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | unknown | 200A | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 40V | 600A | 40 ns | 20ns | 250 ns | 90 ns | 600A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.5m Ω @ 100A, 10V | 3.5V @ 250μA | 600A Tc | 590nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFK220N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfk220n15p-datasheets-0739.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 1250W Tc | 600A | 0.009Ohm | 3000 mJ | N-Channel | 15400pF @ 25V | 9m Ω @ 500mA, 10V | 4.5V @ 8mA | 220A Tc | 162nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFX73N30Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx73n30q-datasheets-0740.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 36ns | 12 ns | 82 ns | 73A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 292A | 0.045Ohm | 2500 mJ | 300V | N-Channel | 5400pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 4mA | 73A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| NVHL025N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvhl025n65s3-datasheets-0715.pdf | TO-247-3 | 11 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 595W Tc | N-Channel | 7330pF @ 400V | 25m Ω @ 37.5A, 10V | 4.5V @ 3mA | 75A Tc | 236nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT40N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh40n50q-datasheets-0596.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 14 ns | 56 ns | 40A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 160A | 0.14Ohm | 2 mJ | 500V | N-Channel | 3800pF @ 25V | 140m Ω @ 500mA, 10V | 4.5V @ 4mA | 40A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT75F50L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt75f50l-datasheets-0720.pdf | TO-264-3, TO-264AA | 3 | 25 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1.04kW | 1 | FET General Purpose Power | R-PSFM-T3 | 45 ns | 55ns | 39 ns | 120 ns | 75A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 1040W Tc | 230A | 0.075Ohm | N-Channel | 11600pF @ 25V | 75m Ω @ 37A, 10V | 5V @ 2.5mA | 75A Tc | 290nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFH36N55Q2 | IXYS | $7.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfh36n55q2-datasheets-0721.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 13ns | 8 ns | 42 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 560W Tc | TO-247AD | 144A | 0.16Ohm | 2500 mJ | 550V | N-Channel | 4100pF @ 25V | 180m Ω @ 500mA, 10V | 5V @ 4mA | 36A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT6025SVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6025svrg-datasheets-0722.pdf | 600V | 25A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 370W | 1 | D3 [S] | 5.16nF | 14 ns | 12ns | 10 ns | 55 ns | 25A | 30V | 600V | N-Channel | 5160pF @ 25V | 250mOhm @ 500mA, 10V | 4V @ 1mA | 25A Tc | 275nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTR40P50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr40p50p-datasheets-0706.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 312W Tc | 120A | 0.26Ohm | P-Channel | 11500pF @ 25V | 260m Ω @ 20A, 10V | 4V @ 1mA | 22A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| APT5014SLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5014bllg-datasheets-0693.pdf | 500V | 35A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3/2 | 30 | 403W | 1 | R-PSSO-G2 | 11 ns | 6ns | 3 ns | 23 ns | 35A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 403W Tc | N-Channel | 3261pF @ 25V | 140m Ω @ 17.5A, 10V | 5V @ 1mA | 35A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK16C60W,S1VQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | 2.387001g | 3 | No | 1 | Single | 50 ns | 25ns | 5 ns | 100 ns | 15.8A | 30V | 130W Tc | 600V | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR90N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | ISOPLUS247™ | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 200V | 200V | 0.022Ohm | N-Channel | 90A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK550N055T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SupreMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtk550n055t2-datasheets-0709.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | unknown | 200A | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 55V | 550A | 45 ns | 40ns | 230 ns | 90 ns | 550A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.6m Ω @ 100A, 10V | 4V @ 250μA | 550A Tc | 595nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFR14N100Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfr14n100q2-datasheets-0710.pdf | ISOPLUS247™ | Lead Free | 3 | 247 | yes | AVALANCHE RATED, UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 200W | 1 | FET General Purpose Power | R-PSFM-T3 | 10ns | 12 ns | 28 ns | 9.5A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 200W Tc | 56A | 2500 mJ | 1kV | N-Channel | 2700pF @ 25V | 1.1 Ω @ 7A, 10V | 5V @ 4mA | 9.5A Tc | 83nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT56M60B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt56m60l-datasheets-0698.pdf | 600V | 56A | TO-247-3 Variant | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | FAST SWITCHING, AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1.04kW | 1 | R-PSFM-T3 | 65 ns | 75ns | 60 ns | 190 ns | 60A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1040W Tc | N-Channel | 11300pF @ 25V | 130m Ω @ 28A, 10V | 5V @ 2.5mA | 60A Tc | 280nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| APT10090BFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10090bfllg-datasheets-0713.pdf | 1kV | 12A | TO-247-3 | Lead Free | 3 | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 298W | 1 | R-PSFM-T3 | 9 ns | 5ns | 4 ns | 23 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 298W Tc | TO-247AD | 48A | 0.9Ohm | N-Channel | 1969pF @ 25V | 950m Ω @ 6A, 10V | 5V @ 1mA | 12A Tc | 71nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTX550N055T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SupreMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtk550n055t2-datasheets-0709.pdf | TO-247-3 | 3 | 28 Weeks | 247 | 1 | yes | EAR99 | AVALANCHE RATED | unknown | 200A | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 55V | 550A | 45 ns | 40ns | 230 ns | 90 ns | 550A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.6m Ω @ 100A, 10V | 4V @ 250μA | 550A Tc | 595nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFX90N20Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfx90n20q-datasheets-0699.pdf | 200V | 90A | TO-247-3 | Contains Lead | 3 | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | FET General Purpose Power | 31ns | 12 ns | 82 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 0.022Ohm | 2500 mJ | 200V | N-Channel | 6800pF @ 25V | 22m Ω @ 45A, 10V | 4V @ 4mA | 90A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| APT77N60SC6 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 25 Weeks | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | SINGLE | GULL WING | 3 | 481W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 27ns | 8 ns | 110 ns | 77A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 481W Tc | 272A | N-Channel | 13600pF @ 25V | 41m Ω @ 44.4A, 10V | 3.6V @ 2.96mA | 77A Tc | 260nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFR44N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfr44n80p-datasheets-0701.pdf | ISOPLUS247™ | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | R-PSIP-T3 | 28 ns | 22ns | 27 ns | 75 ns | 25A | 30V | SILICON | ISOLATED | SWITCHING | 300W Tc | 0.2Ohm | 3400 mJ | 800V | N-Channel | 12000pF @ 25V | 200m Ω @ 22A, 10V | 5V @ 8mA | 25A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFK32N90P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n90p-datasheets-0702.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 960W Tc | 80A | 0.3Ohm | 2000 mJ | N-Channel | 10600pF @ 25V | 300m Ω @ 16A, 10V | 6.5V @ 1mA | 32A Tc | 215nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTR32P60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtr32p60p-datasheets-0703.pdf | ISOPLUS247™ | 3 | 28 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 18A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 310W Tc | 96A | 0.385Ohm | 3500 mJ | P-Channel | 11100pF @ 25V | 385m Ω @ 16A, 10V | 4V @ 1mA | 18A Tc | 196nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTD5N100A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | Die | 5 | UPPER | NO LEAD | 1 | Not Qualified | R-XUUC-N5 | 5A | SILICON | SINGLE | 1000V | 1000V | 2Ohm | N-Channel | 5A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH60N20L2 | IXYS | $30.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt60n20l2-datasheets-3662.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 200V | 200V | 540W Tc | 150A | 0.045Ohm | 2000 mJ | N-Channel | 10500pF @ 25V | 45m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 255nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFH12N120 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n120-datasheets-0692.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | No | 3 | Single | 500W | 1 | 25ns | 17 ns | 35 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 500W Tc | TO-247AD | 48A | 1.2kV | N-Channel | 3400pF @ 25V | 1.4 Ω @ 500mA, 10V | 5V @ 4mA | 12A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APT5014BLLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt5014bllg-datasheets-0693.pdf | 500V | 35A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 23 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | Tin | No | e1 | SINGLE | 3 | 403W | 1 | R-PSFM-T3 | 11 ns | 6ns | 3 ns | 23 ns | 35A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 403W Tc | TO-247AD | N-Channel | 3261pF @ 25V | 140m Ω @ 17.5A, 10V | 5V @ 1mA | 35A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTR90P20P | IXYS | $20.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr90p20p-datasheets-0695.pdf | ISOPLUS247™ | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 53A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 312W Tc | 270A | 0.048Ohm | P-Channel | 12000pF @ 25V | 48m Ω @ 45A, 10V | 4V @ 1mA | 53A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTT38N30L2HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 300V | 400W Tc | N-Channel | 7200pF @ 25V | 100m Ω @ 19A, 10V | 4.5V @ 250μA | 38A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT1001RBVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | 1kV | 11A | TO-247-3 | Lead Free | 278W | 1 | TO-247 [B] | 3.05nF | 12 ns | 11ns | 55 ns | 11A | 40V | 1000V | N-Channel | 3050pF @ 25V | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 11A Tc | 150nC @ 10V |
