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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFT12N90Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft12n90q-datasheets-0671.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 23ns | 15 ns | 40 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 48A | 0.9Ohm | 900V | N-Channel | 2900pF @ 25V | 900m Ω @ 6A, 10V | 5.5V @ 4mA | 12A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| APT8065SVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8065svrg-datasheets-0651.pdf | 800V | 13A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 280W | 1 | D3 [S] | 3.7nF | 12 ns | 11ns | 12 ns | 60 ns | 13A | 30V | 800V | N-Channel | 3700pF @ 25V | 650mOhm @ 500mA, 10V | 4V @ 1mA | 13A Tc | 225nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT30N120H | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~200°C TJ | Tape & Reel (TR) | SiCFET (Silicon Carbide) | TO-247-3 | 1200V | 270W Tc | N-Channel | 1700pF @ 400V | 100m Ω @ 20A, 20V | 3.5V @ 1mA | 40A Tc | 105nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT1001RBVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt1001rbvrg-datasheets-0652.pdf | 1kV | 11A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 280W | 1 | TO-247 [B] | 3.66nF | 12 ns | 11ns | 12 ns | 55 ns | 11A | 30V | 1000V | N-Channel | 3660pF @ 25V | 1Ohm @ 500mA, 10V | 4V @ 1mA | 11A Tc | 225nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR15N80Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr15n80q-datasheets-0653.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 27ns | 16 ns | 53 ns | 13A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 60A | 0.6Ohm | 1000 mJ | 800V | N-Channel | 4300pF @ 25V | 600m Ω @ 7.5A, 10V | 4.5V @ 4mA | 13A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTK62N25 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixtk62n25-datasheets-0638.pdf | TO-264-3, TO-264AA | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 390W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 25ns | 15 ns | 115 ns | 62A | 20V | SILICON | DRAIN | SWITCHING | 390W Tc | 248A | 0.035Ohm | 1500 mJ | 250V | N-Channel | 5400pF @ 25V | 35m Ω @ 31A, 10V | 4V @ 250μA | 62A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| APT43M60L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt43m60b2-datasheets-4485.pdf | 600V | 43A | TO-264-3, TO-264AA | Lead Free | 3 | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 780W | 1 | R-PSFM-T3 | 48 ns | 55ns | 44 ns | 145 ns | 45A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 780W Tc | N-Channel | 8590pF @ 25V | 150m Ω @ 21A, 10V | 5V @ 2.5mA | 45A Tc | 215nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTH12N90 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth12n90-datasheets-0640.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 63 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 48A | 0.9Ohm | 900V | N-Channel | 4500pF @ 25V | 900m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTP230N075T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp230n075t2-datasheets-0641.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 230A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 480W Tc | TO-220AB | 700A | 0.0042Ohm | 850 mJ | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 178nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFK16N90Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfk16n90q-datasheets-0642.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 21 ns | 24ns | 14 ns | 56 ns | 16A | 20V | SILICON | DRAIN | 360W Tc | 64A | 0.65Ohm | 1500 mJ | 900V | N-Channel | 4000pF @ 25V | 650m Ω @ 8A, 10V | 5V @ 4mA | 16A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH240N15X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 19 Weeks | compliant | 150V | 780W Tc | N-Channel | 9580pF @ 25V | 5.4m Ω @ 120A, 10V | 4.5V @ 4mA | 240A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKC25N80C | IXYS | $43.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixkc25n80c-datasheets-0643.pdf | ISOPLUS220™ | Lead Free | 3 | 32 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 140W | 1 | FET General Purpose Power | Not Qualified | 25ns | 10 ns | 75 ns | 25A | 20V | SILICON | ISOLATED | SWITCHING | TO-220AB | 20A | 0.15Ohm | 690 mJ | 800V | N-Channel | 4600pF @ 25V | 150m Ω @ 18A, 10V | 4V @ 2mA | 25A Tc | 180nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTH110N10L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtt110n10l2-datasheets-3734.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 600W Tc | 0.018Ohm | N-Channel | 10500pF @ 25V | 18m Ω @ 500mA, 10V | 4.5V @ 250μA | 110A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SCT30N120D2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~200°C TJ | SiCFET (Silicon Carbide) | Non-RoHS Compliant | TO-247-3 | 1200V | 270W Tc | N-Channel | 1700pF @ 400V | 100m Ω @ 20A, 20V | 3.5V @ 1mA | 40A Tc | 105nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460LC | Vishay Siliconix | $2.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp460lcpbf-datasheets-4357.pdf | 500V | 20A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 6 Weeks | 38.000013g | Unknown | 3 | 20A | 500V | 1 | Single | 280W | 1 | TO-247-3 | 3.6nF | 18 ns | 77ns | 43 ns | 40 ns | 20A | 30V | 500V | 4V | 280W Tc | 270mOhm | 500V | N-Channel | 3600pF @ 25V | 4 V | 270mOhm @ 12A, 10V | 4V @ 250μA | 20A Tc | 120nC @ 10V | 270 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APT10M19SVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10m19svfrg-datasheets-0649.pdf | 100V | 75A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | No | 370W | 1 | D3 [S] | 16 ns | 40ns | 20 ns | 50 ns | 75A | 30V | 100V | N-Channel | 6120pF @ 25V | 19mOhm @ 37.5A, 10V | 4V @ 1mA | 75A Tc | 300nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH13N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n100-datasheets-0650.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 33ns | 32 ns | 62 ns | 12.5A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | 50A | 0.9Ohm | 1kV | N-Channel | 4000pF @ 25V | 900m Ω @ 500mA, 10V | 4.5V @ 4mA | 12.5A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDH038AN08A1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 75V | 80A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 4 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | Single | 450W | 1 | FET General Purpose Power | 88 ns | 141ns | 126 ns | 232 ns | 80A | 20V | SILICON | SWITCHING | 450W Tc | 22A | 75V | N-Channel | 8665pF @ 25V | 3.8m Ω @ 80A, 10V | 4V @ 250μA | 22A Ta 80A Tc | 160nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFT15N80Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n80q-datasheets-2059.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 16 ns | 53 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 60A | 0.6Ohm | 1000 mJ | 800V | N-Channel | 4300pF @ 25V | 600m Ω @ 7.5A, 10V | 4.5V @ 4mA | 15A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDM21-05QC | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-fmd2105qc-datasheets-4340.pdf | i4-Pac™-5 | 5 | yes | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T5 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 21A | 0.22Ohm | N-Channel | 220m Ω @ 15A, 10V | 4.5V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5014BFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5014bfllg-datasheets-0637.pdf | 500V | 35A | TO-247-3 | Lead Free | 30 Weeks | No | 403W | 403W | 1 | TO-247 [B] | 3.261nF | 11 ns | 6ns | 3 ns | 23 ns | 35A | 30V | 500V | N-Channel | 3261pF @ 25V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 35A Tc | 72nC @ 10V | 140 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT10M19SVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10m19svrg-datasheets-0612.pdf | 100V | 75A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 370W | 370W | 1 | D3 [S] | 5.28nF | 16 ns | 40ns | 20 ns | 50 ns | 75A | 30V | 100V | N-Channel | 6120pF @ 25V | 19mOhm @ 500mA, 10V | 4V @ 1mA | 75A Tc | 300nC @ 10V | 170 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT94N30T | IXYS | $19.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh94n30t-datasheets-4270.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 94A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 890W Tc | 235A | 0.036Ohm | 500 mJ | N-Channel | 11400pF @ 25V | 36m Ω @ 47A, 10V | 5V @ 4mA | 94A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFX64N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk64n50p-datasheets-1510.pdf | 500V | 64A | TO-247-3 | Lead Free | 3 | 30 Weeks | 85MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 830W | 1 | FET General Purpose Power | 25ns | 22 ns | 85 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 2500 mJ | 500V | N-Channel | 8700pF @ 25V | 85m Ω @ 32A, 10V | 5.5V @ 8mA | 64A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTQ102N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 102A | 250V | N-Channel | 102A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R045CPAFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipw60r045cpafksa1-datasheets-0616.pdf | TO-247-3 | 25.4mm | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | 1 | NOT SPECIFIED | 431W | 1 | Not Qualified | 150°C | R-PSFM-T3 | 30 ns | 20ns | 10 ns | 100 ns | 60A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 431W Tc | 230A | 0.045Ohm | 600V | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 60A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFT150N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n20t-datasheets-4462.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 150A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 890W Tc | 375A | 0.015Ohm | 1500 mJ | N-Channel | 11700pF @ 25V | 15m Ω @ 75A, 10V | 5V @ 4mA | 150A Tc | 177nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFH12N90 | IXYS | $1.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n90-datasheets-4489.pdf | 900V | 12A | TO-247-3 | Lead Free | 3 | 900mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 12ns | 18 ns | 51 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 48A | 900V | N-Channel | 4200pF @ 25V | 900m Ω @ 6A, 10V | 4.5V @ 4mA | 12A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFA20N85XHV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 850V | 540W Tc | N-Channel | 1660pF @ 25V | 330m Ω @ 10A, 10V | 5.5V @ 2.5mA | 20A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M38BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m38bvrg-datasheets-0623.pdf | 200V | 67A | TO-247-3 | Lead Free | 3 | 31 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | HIGH VOLTAGE | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 370W | 1 | R-PSFM-T3 | 14 ns | 21ns | 10 ns | 48 ns | 67A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 370W Tc | 268A | 0.038Ohm | N-Channel | 6120pF @ 25V | 38m Ω @ 500mA, 10V | 4V @ 1mA | 67A Tc | 225nC @ 10V | 10V | ±30V |
