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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFR13N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 13A | 500V | N-Channel | 13A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ23N60Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 23A | 600V | N-Channel | 23A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH30N60Q | IXYS | $12.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60q-datasheets-4376.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 32ns | 16 ns | 80 ns | 30A | 20V | SILICON | DRAIN | 500W Tc | TO-247AD | 120A | 1500 mJ | 600V | N-Channel | 4700pF @ 25V | 230m Ω @ 500mA, 10V | 4.5V @ 4mA | 30A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| APT6038SLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6038bllg-datasheets-4256.pdf | 600V | 17A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 265W | 1 | 9 ns | 3ns | 4 ns | 17 ns | 17A | 30V | N-Channel | 1850pF @ 25V | 380m Ω @ 8.5A, 10V | 5V @ 1mA | 17A Tc | 43nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH150N25X3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n25x3hv-datasheets-4378.pdf | 24 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5020BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5020bvrg-datasheets-4379.pdf | 500V | 26A | TO-247-3 | Lead Free | 22 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 300W | 1 | TO-247 [B] | 4.44nF | 12 ns | 10ns | 8 ns | 50 ns | 26A | 30V | 500V | N-Channel | 4440pF @ 25V | 200mOhm @ 500mA, 10V | 4V @ 1mA | 26A Tc | 225nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| APT5018SFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5018bfllg-datasheets-4303.pdf | 500V | 27A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 300W | 1 | D3 [S] | 2.6nF | 9 ns | 4ns | 2 ns | 18 ns | 27A | 30V | 500V | N-Channel | 2596pF @ 25V | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 27A Tc | 58nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTK128N15 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtk128n15-datasheets-4381.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 30ns | 17 ns | 115 ns | 128A | 20V | SILICON | DRAIN | SWITCHING | 540W Tc | 512A | 0.015Ohm | 2500 mJ | 150V | N-Channel | 6000pF @ 25V | 15m Ω @ 500mA, 10V | 4V @ 250μA | 128A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTT10N100D2 | IXYS | $16.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d2-datasheets-7031.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | 3 | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 695W Tc | N-Channel | 5320pF @ 25V | 1.5 Ω @ 5A, 10V | 10A Tc | 200nC @ 5V | Depletion Mode | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| APT5020SVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5020svfrg-datasheets-4383.pdf | 500V | 26A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 300W | 300W | 1 | D3 [S] | 4.86nF | 12 ns | 10ns | 8 ns | 50 ns | 26A | 30V | 500V | N-Channel | 4440pF @ 25V | 200mOhm @ 500mA, 10V | 4V @ 1mA | 26A Tc | 225nC @ 10V | 45 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| APT20M38SVRG/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m38svrg-datasheets-1787.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 33 Weeks | D3Pak | 6.12nF | 67A | 200V | 370W Tc | N-Channel | 6120pF @ 25V | 38mOhm @ 33.5A, 10V | 4V @ 1mA | 67A Tc | 225nC @ 10V | 38 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH60N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n20-datasheets-4371.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 63ns | 26 ns | 85 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 240A | 2500 mJ | 200V | N-Channel | 5200pF @ 25V | 33m Ω @ 30A, 10V | 4V @ 4mA | 60A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFR20N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr20n100p-datasheets-4372.pdf | ISOPLUS247™ | 3 | 26 Weeks | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | FET General Purpose Power | Not Qualified | 37ns | 45 ns | 56 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 230W Tc | 50A | 0.64Ohm | 500 mJ | 1kV | N-Channel | 7300pF @ 25V | 640m Ω @ 10A, 10V | 6.5V @ 1mA | 11A Tc | 126nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFH170N15X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 19 Weeks | compliant | 150V | 520W Tc | N-Channel | 7620pF @ 25V | 6.7m Ω @ 85A, 10V | 4.5V @ 4mA | 170A Tc | 122nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5016BLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5016bllg-datasheets-4373.pdf | 500V | 30A | TO-247-3 | Lead Free | 3 | IN PRODUCTION (Last Updated: 4 weeks ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | R-PSFM-T3 | 10 ns | 10ns | 14 ns | 27 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 329W Tc | TO-247AD | N-Channel | 2833pF @ 25V | 160m Ω @ 15A, 10V | 5V @ 1mA | 30A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTP30N25L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 | 24 Weeks | compliant | 250V | 355W Tc | N-Channel | 3200pF @ 25V | 140m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT30N85XHV | IXYS | $13.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n85x-datasheets-1375.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | yes | unknown | 850V | 695W Tc | N-Channel | 2460pF @ 25V | 220m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 30A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX48N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfx48n60p-datasheets-4374.pdf | 600V | 48A | TO-247-3 | Lead Free | 3 | 30 Weeks | 135MOhm | 3 | yes | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | 25ns | 22 ns | 85 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 110A | 2000 mJ | 600V | N-Channel | 8860pF @ 25V | 135m Ω @ 500mA, 10V | 5V @ 8mA | 48A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTQ30N50L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50l-datasheets-4278.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 500V | 500V | 400W Tc | 60A | 0.2Ohm | 1500 mJ | N-Channel | 10200pF @ 25V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APT5018SLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5018sllg-datasheets-4375.pdf | 500V | 27A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 300W | 1 | D3 [S] | 2.6nF | 9 ns | 4ns | 2 ns | 18 ns | 27A | 30V | 500V | N-Channel | 2596pF @ 25V | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 27A Tc | 58nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFT80N65X2HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixft80n65x2hv-datasheets-4361.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | compliant | 650V | 890W Tc | N-Channel | 8300pF @ 25V | 5V @ 4mA | 80A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT75N20L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | D2PAK | 30 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH16N50D2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth16n50d2-datasheets-4362.pdf | TO-247-3 | Lead Free | 3 | 24 Weeks | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 695W Tc | 0.24Ohm | N-Channel | 5250pF @ 25V | 240m Ω @ 8A, 0V | 16A Tc | 199nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTT40N50L2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 24 Weeks | 500V | 540W Tc | N-Channel | 10400pF @ 25V | 170m Ω @ 20A, 10V | 4.5V @ 250μA | 40A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH10N100D | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d-datasheets-4365.pdf | TO-247-3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 85ns | 75 ns | 110 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 400W Tc | 20A | 1kV | N-Channel | 2500pF @ 25V | 1.4 Ω @ 10A, 10V | 3.5V @ 250μA | 10A Tc | 130nC @ 10V | Depletion Mode | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFT40N85XHV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh40n85x-datasheets-2899.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | yes | unknown | 40A | 850V | 860W Tc | N-Channel | 3700pF @ 25V | 145m Ω @ 500mA, 10V | 5.5V @ 4mA | 40A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK102N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtk102n30p-datasheets-4367.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | Not Qualified | 28ns | 30 ns | 130 ns | 102A | 20V | SILICON | DRAIN | SWITCHING | 5V | 700W Tc | 250A | 2500 mJ | 300V | N-Channel | 7500pF @ 25V | 33m Ω @ 500mA, 10V | 5V @ 500μA | 102A Tc | 224nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| APT56M50B2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt56m50b2-datasheets-4368.pdf | 500V | 56A | TO-247-3 Variant | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 18 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 780W | 1 | 38 ns | 45ns | 33 ns | 100 ns | 56A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 780W Tc | 500V | N-Channel | 8800pF @ 25V | 100m Ω @ 28A, 10V | 5V @ 2.5mA | 56A Tc | 220nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTH50N30 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth50n30-datasheets-4352.pdf | TO-247-3 | 3 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 400W | 1 | R-PSIP-T3 | 33ns | 17 ns | 70 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 200A | 0.065Ohm | 300V | N-Channel | 4400pF @ 25V | 65m Ω @ 25A, 10V | 4V @ 250μA | 50A Tc | 165nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT30M85BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30m85bvrg-datasheets-4353.pdf | 300V | 40A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 31 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 300W | 1 | R-PSFM-T3 | 12 ns | 10ns | 7 ns | 43 ns | 40A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | TO-247AD | 0.085Ohm | 300V | N-Channel | 4950pF @ 25V | 85m Ω @ 500mA, 10V | 4V @ 1mA | 40A Tc | 195nC @ 10V | 10V | ±30V |
