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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFQ26N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 26A | 500V | N-Channel | 26A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH24N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth24n50-datasheets-4211.pdf | 500V | 24A | TO-247-3 | Lead Free | 3 | 28 Weeks | No SVHC | 230mOhm | 3 | yes | EAR99 | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 30 ns | 65 ns | 24A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-247AD | 96A | 500V | N-Channel | 4200pF @ 25V | 4 V | 230m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFT70N15 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft70n15-datasheets-4193.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 52ns | 23 ns | 70 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 280A | 0.028Ohm | 1000 mJ | 150V | N-Channel | 3600pF @ 25V | 28m Ω @ 35A, 10V | 4V @ 4mA | 70A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTQ120N20P | IXYS | $16.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtk120n20p-datasheets-4157.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 714W | 1 | 35ns | 31 ns | 100 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | 0.022Ohm | 2000 mJ | 200V | N-Channel | 6000pF @ 25V | 22m Ω @ 500mA, 10V | 5V @ 250μA | 120A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFT24N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n80p-datasheets-4174.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 650W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 24 ns | 75 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 650W Tc | 55A | 0.4Ohm | 1500 mJ | 800V | N-Channel | 7200pF @ 25V | 400m Ω @ 12A, 10V | 5V @ 4mA | 24A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTA6N100D2HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | compliant | 1000V | 300W Tc | N-Channel | 2650pF @ 10V | 2.2 Ω @ 3A, 0V | 4.5V @ 250μA | 6A Tj | 95nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT80N65X2HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 650V | 890W Tc | N-Channel | 8300pF @ 25V | 38m Ω @ 40A, 10V | 5V @ 4mA | 80A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R075CPFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r075cpfksa1-datasheets-4175.pdf | TO-247-3 | Lead Free | 3 | 52 Weeks | 3 | yes | No | e3 | Tin (Sn) | SINGLE | 3 | 313W | 1 | 40 ns | 17ns | 7 ns | 110 ns | 39A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 313W Tc | 0.075Ohm | N-Channel | 4000pF @ 100V | 75m Ω @ 26A, 10V | 3.5V @ 1.7mA | 39A Tc | 116nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTT11P50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixth11p50-datasheets-5654.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 750mOhm | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | GULL WING | 4 | Single | 300W | 1 | Other Transistors | R-PSSO-G2 | 27ns | 35 ns | 35 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | 44A | -500V | P-Channel | 4700pF @ 25V | 750m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFK36N60P | IXYS | $2.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft36n60p-datasheets-4150.pdf | 600V | 36A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 650W | 1 | Not Qualified | 25ns | 22 ns | 80 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 650W Tc | 80A | 0.19Ohm | 1500 mJ | 600V | N-Channel | 5800pF @ 25V | 190m Ω @ 18A, 10V | 5V @ 4mA | 36A Tc | 102nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IPC60R041C6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK24N80P | IXYS | $60.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n80p-datasheets-4174.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 650W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 24 ns | 75 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 650W Tc | 55A | 0.4Ohm | 1500 mJ | 800V | N-Channel | 7200pF @ 25V | 400m Ω @ 12A, 10V | 5V @ 4mA | 24A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFB18N50K | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb18n50kpbf-datasheets-6636.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6 Weeks | 6.000006g | 3 | No | 1 | Single | 220W | 1 | TO-220AB | 2.83nF | 22 ns | 60ns | 30 ns | 45 ns | 17A | 30V | 500V | 220W Tc | 290mOhm | N-Channel | 2830pF @ 25V | 290mOhm @ 10A, 10V | 5V @ 250μA | 17A Tc | 120nC @ 10V | 290 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| APT17F80B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt17f80b-datasheets-4188.pdf | 800V | 17A | TO-247-3 | Lead Free | 3 | 8 Weeks | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 500W | 1 | R-PSFM-T3 | 21 ns | 31ns | 27 ns | 93 ns | 18A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500W Tc | TO-247AD | 70A | 0.58Ohm | 797 mJ | N-Channel | 3757pF @ 25V | 580m Ω @ 9A, 10V | 5V @ 1mA | 18A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTT69N30P | IXYS | $1.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq69n30p-datasheets-3979.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 27 ns | 75 ns | 69A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 200A | 0.049Ohm | 1500 mJ | 300V | N-Channel | 4960pF @ 25V | 49m Ω @ 500mA, 10V | 5V @ 250μA | 69A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFH6N120 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n120-datasheets-4191.pdf | TO-247-3 | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 33ns | 18 ns | 42 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 300W Tc | TO-247AD | 6A | 24A | 500 mJ | 1.2kV | N-Channel | 1950pF @ 25V | 2.6 Ω @ 3A, 10V | 5V @ 2.5mA | 6A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| APT37F50S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt37f50b-datasheets-2839.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 23 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 37A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 520W Tc | 115A | 0.15Ohm | 780 mJ | N-Channel | 5710pF @ 25V | 150m Ω @ 18A, 10V | 5V @ 1mA | 37A Tc | 145nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHG73N60E-E3 | Vishay Siliconix | $7.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg73n60ege3-datasheets-0381.pdf | TO-247-3 | 3 | 38.000013g | 3 | No | SINGLE | 1 | 1 | FET General Purpose Powers | 63 ns | 158ns | 180 ns | 290 ns | 73A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 520W Tc | TO-247AC | N-Channel | 7700pF @ 100V | 39m Ω @ 36A, 10V | 4V @ 250μA | 73A Tc | 362nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA65R045C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa65r045c7xksa1-datasheets-4168.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 20 ns | 14ns | 7 ns | 82 ns | 18A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 212A | 0.045Ohm | 249 mJ | N-Channel | 4340pF @ 400V | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 18A Tc | 93nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFT36N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft36n60p-datasheets-4150.pdf | 600V | 36A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 650W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 22 ns | 80 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 5V | 650W Tc | 80A | 0.19Ohm | 1500 mJ | 600V | N-Channel | 5800pF @ 25V | 190m Ω @ 18A, 10V | 5V @ 4mA | 36A Tc | 102nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFR15N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 18 Weeks | 1000V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT14M100B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt14m100b-datasheets-4151.pdf | 1kV | 14A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 18 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 500W | 1 | R-PSFM-T3 | 28 ns | 29ns | 26 ns | 95 ns | 14A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 500W Tc | 55A | 0.88Ohm | 875 mJ | 1kV | N-Channel | 3965pF @ 25V | 900m Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFH7N90Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfh7n90q-datasheets-4153.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 15ns | 13 ns | 42 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-247AD | 7A | 28A | 700 mJ | 900V | N-Channel | 2200pF @ 25V | 1.5 Ω @ 500mA, 10V | 5V @ 2.5mA | 7A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTK170N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtt170n10p-datasheets-5567.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 50ns | 33 ns | 90 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 715W Tc | 350A | 0.009Ohm | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 9m Ω @ 500mA, 10V | 5V @ 250μA | 170A Tc | 198nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFT60N50P3 | IXYS | $50.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n50p3-datasheets-1724.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18 ns | 16ns | 8 ns | 37 ns | 60A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 150A | 0.1Ohm | 1000 mJ | 500V | N-Channel | 6250pF @ 25V | 100m Ω @ 30A, 10V | 5V @ 4mA | 60A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTK120N20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtk120n20p-datasheets-4157.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | Not Qualified | R-PSFM-T3 | 35ns | 31 ns | 100 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | 300A | 0.022Ohm | 2000 mJ | 200V | N-Channel | 6000pF @ 25V | 22m Ω @ 500mA, 10V | 5V @ 250μA | 120A Tc | 152nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFT88N28P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 14 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH6N90 | IXYS | $1.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth6n90-datasheets-4158.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 4.5Ohm | 3 | yes | e3 | Matte Tin (Sn) | 260 | 3 | Single | 35 | 180W | 1 | FET General Purpose Power | Not Qualified | 40ns | 60 ns | 100 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-247AD | 6A | 24A | 900V | N-Channel | 2600pF @ 25V | 1.8 Ω @ 500mA, 10V | 4.5V @ 250μA | 6A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| APT5024BLLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt5024bllg-datasheets-4159.pdf | 500V | 22A | TO-247-3 | Lead Free | 3 | 19 Weeks | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 265W | 1 | R-PSFM-T3 | 8 ns | 6ns | 2 ns | 18 ns | 22A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 265W Tc | TO-247AD | 88A | 0.24Ohm | 960 mJ | N-Channel | 1900pF @ 25V | 240m Ω @ 11A, 10V | 5V @ 1mA | 22A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFQ24N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 24A | 500V | N-Channel | 24A Tc |
