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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFH120N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh120n20p-datasheets-4160.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 22MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 35ns | 31 ns | 100 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 5V | 714W Tc | TO-247AD | 2000 mJ | 200V | N-Channel | 6000pF @ 25V | 22m Ω @ 500mA, 10V | 5V @ 4mA | 120A Tc | 152nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFH12N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/ixys-ixfh12n90p-datasheets-4161.pdf | TO-247-3 | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 380W | 1 | FET General Purpose Power | Not Qualified | 34ns | 68 ns | 50 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 3.5V | 380W Tc | 24A | 0.9Ohm | 500 mJ | 900V | N-Channel | 3080pF @ 25V | 3.5 V | 900m Ω @ 6A, 10V | 6.5V @ 1mA | 12A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| APT14F100B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt14f100b-datasheets-4162.pdf | 1kV | 14A | TO-247-3 | Lead Free | 3 | 22 Weeks | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e1 | SINGLE | 3 | 500W | 1 | R-PSFM-T3 | 28 ns | 29ns | 26 ns | 95 ns | 14A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 500W Tc | TO-247AD | 56A | 0.98Ohm | 875 mJ | N-Channel | 3965pF @ 25V | 980m Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFH9N80Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfh9n80q-datasheets-4148.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | 20ns | 13 ns | 42 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 9A | 700 mJ | 800V | N-Channel | 2200pF @ 25V | 1.1 Ω @ 500mA, 10V | 5V @ 2.5mA | 9A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFT50N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60x-datasheets-4003.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 50A | 600V | 660W Tc | N-Channel | 4660pF @ 25V | 73m Ω @ 25A, 10V | 4.5V @ 4mA | 50A Tc | 116nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH041N65EFLN4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fch041n65efln4-datasheets-4113.pdf | TO-247-4 | 12 Weeks | yes | compliant | 650V | 595W Tc | N-Channel | 12560pF @ 100V | 41m Ω @ 38A, 10V | 5V @ 7.6mA | 76A Tc | 298nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC50R045CPX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 39 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH060N80-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch060n80f155-datasheets-4117.pdf | TO-247-3 | 12 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 56A | 800V | 4.5V | 500W Tc | N-Channel | 14685pF @ 100V | 60m Ω @ 29A, 10V | 4.5V @ 5.8mA | 56A Tc | 350nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ22N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n60p3-datasheets-4386.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 26 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 500W | 1 | FET General Purpose Power | Not Qualified | 28 ns | 17ns | 19 ns | 54 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 55A | 400 mJ | 600V | N-Channel | 2600pF @ 25V | 360m Ω @ 11A, 10V | 5V @ 1.5mA | 22A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTF200N10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtf200n10t-datasheets-4126.pdf | i4-Pac™-5 | 3 | 28 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 31ns | 34 ns | 45 ns | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 156W Tc | 0.007Ohm | 100V | N-Channel | 9400pF @ 25V | 7m Ω @ 50A, 10V | 4.5V @ 250μA | 90A Tc | 152nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTQ100N25P | IXYS | $10.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt100n25p-datasheets-5585.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | No SVHC | 27MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 26ns | 28 ns | 100 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | 250A | 2000 mJ | 250V | N-Channel | 6300pF @ 25V | 24m Ω @ 50A, 10V | 5V @ 250μA | 100A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFT52N50P2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n50p2-datasheets-1534.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 52A | 30V | SILICON | DRAIN | SWITCHING | 960W Tc | 150A | 0.12Ohm | 1500 mJ | 500V | N-Channel | 6800pF @ 25V | 120m Ω @ 26A, 10V | 4.5V @ 4mA | 52A Tc | 113nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| R6035KNZC8 | ROHM Semiconductor | $11.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | TO-3P-3 Full Pack | 3 | 15 Weeks | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 102W Tc | 35A | 105A | 0.102Ohm | 796 mJ | N-Channel | 3000pF @ 25V | 102m Ω @ 18.1A, 10V | 5V @ 1mA | 35A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FCHD040N65S3-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fchd040n65s3f155-datasheets-4141.pdf | TO-247-3 | 9 Weeks | yes | e3 | Tin (Sn) | 650V | 417W Tc | N-Channel | 4740pF @ 400V | 40m Ω @ 32.5A, 10V | 4.5V @ 1.7mA | 65A Tc | 136nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ150N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq150n15p-datasheets-4142.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | Not Qualified | 33ns | 28 ns | 100 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 5V | 714W Tc | 2500 mJ | 150V | N-Channel | 5800pF @ 25V | 13m Ω @ 500mA, 10V | 5V @ 250μA | 150A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFJ20N85X | IXYS | $10.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/ixys-ixfj20n85x-datasheets-4143.pdf | TO-247-3 | 19 Weeks | yes | 850V | 110W Tc | N-Channel | 1660pF @ 25V | 360m Ω @ 10A, 10V | 5.5V @ 2.5mA | 9.5A Tc | 63nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH100N25P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh100n25p-datasheets-4144.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PSFM-T3 | 26ns | 28 ns | 100 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | TO-247AD | 250A | 0.027Ohm | 2000 mJ | 250V | N-Channel | 6300pF @ 25V | 27m Ω @ 50A, 10V | 5V @ 4mA | 100A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFH50N50P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/ixys-ixft50n50p3-datasheets-3600.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 30 Weeks | 3 | EAR99 | Single | 25 ns | 53 ns | 50A | 30V | 500V | 960W Tc | N-Channel | 4335pF @ 25V | 120m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTR62N15P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtr62n15p-datasheets-4107.pdf | ISOPLUS247™ | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | 36A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | 150W Tc | 150A | 0.045Ohm | 1000 mJ | N-Channel | 2250pF @ 25V | 45m Ω @ 31A, 10V | 5V @ 250μA | 36A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IGLD60R190D1AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolGaN™ | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-igld60r190d1auma1-datasheets-4147.pdf | 8-LDFN Exposed Pad | 12 Weeks | 600V | 62.5W Tc | N-Channel | 157pF @ 400V | 1.6V @ 960μA | 10A Tc | -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK31A60W,S4VX | Toshiba Semiconductor and Storage | $1.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 3nF | 16 Weeks | Single | 45W | TO-220SIS | 3nF | 32ns | 8.5 ns | 165 ns | 30.8A | 30V | 600V | 45W Tc | 73mOhm | 600V | N-Channel | 3000pF @ 300V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 86nC @ 10V | Super Junction | 88 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| STW70N65DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-247-3 | 650V | 450W Tc | N-Channel | 4900pF @ 100V | 40m Ω @ 34A, 10V | 4.75V @ 250μA | 68A Tc | 125nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N65X2 | IXYS | $9.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 23 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ50N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixft50n50p3-datasheets-3600.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 26 Weeks | 3 | Single | 25 ns | 53 ns | 50A | 30V | 500V | 960W Tc | N-Channel | 4335pF @ 25V | 120m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT20N120H | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~200°C TJ | Tape & Reel (TR) | SiCFET (Silicon Carbide) | TO-247-3 | 1200V | 175W Tc | N-Channel | 650pF @ 400V | 290m Ω @ 10A, 20V | 3.5V @ 1mA | 20A Tc | 45nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT88N30P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 300V | 600W Tc | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 4mA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT24P20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/ixys-ixtt24p20-datasheets-4098.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 110MOhm | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 29ns | 28 ns | 68 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | 96A | -200V | P-Channel | 4200pF @ 25V | 110m Ω @ 500mA, 10V | 5V @ 250μA | 24A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTA30N25L2 | IXYS | $9.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | compliant | 250V | 355W Tc | N-Channel | 3200pF @ 25V | 140m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH50N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60x-datasheets-4003.pdf | TO-247-3 | 19 Weeks | 50A | 600V | 660W Tc | N-Channel | 4660pF @ 25V | 73m Ω @ 25A, 10V | 4.5V @ 4mA | 50A Tc | 116nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKP35N60C5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkp35n60c5-datasheets-4100.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 35A | 20V | SILICON | DRAIN | SWITCHING | TO-220AB | 0.1Ohm | 800 mJ | 600V | N-Channel | 2800pF @ 100V | 100m Ω @ 18A, 10V | 3.9V @ 1.2mA | 35A Tc | 70nC @ 10V | 10V | ±20V |
