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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTT500N04T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt500n04t2-datasheets-4316.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | SINGLE | GULL WING | 4 | 1kW | 1 | FET General Purpose Power | R-PSSO-G2 | 500A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1000W Tc | 800 mJ | N-Channel | 25000pF @ 25V | 1.6m Ω @ 100A, 10V | 3.5V @ 250μA | 500A Tc | 405nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFR70N15 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr70n15-datasheets-4295.pdf | ISOPLUS247™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | Not Qualified | 52ns | 25 ns | 70 ns | 67A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 70A | 0.028Ohm | 1000 mJ | 150V | N-Channel | 3600pF @ 25V | 28m Ω @ 35A, 10V | 4V @ 4mA | 67A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTH1N170DHV | IXYS | $14.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixta1n170dhv-datasheets-5626.pdf | TO-247-3 Variant | 24 Weeks | compliant | 1700V | 290W Tc | N-Channel | 3090pF @ 25V | 16 Ω @ 500mA, 0V | 4.5V @ 250μA | 1A Tj | 47nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK32N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfx32n80p-datasheets-4281.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | 24ns | 24 ns | 85 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 5V | 830W Tc | 0.27Ohm | 2000 mJ | 800V | N-Channel | 8800pF @ 25V | 270m Ω @ 16A, 10V | 5V @ 8mA | 32A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFX200N10P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfk200n10p-datasheets-7092.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | 35ns | 90 ns | 150 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 830W Tc | 400A | 0.0075Ohm | 4000 mJ | 100V | N-Channel | 7600pF @ 25V | 7.5m Ω @ 100A, 10V | 5V @ 8mA | 200A Tc | 235nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTA02N250HV | IXYS | $13.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixta02n250hv-datasheets-4299.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 17 Weeks | 1.770002g | No | GULL WING | 3 | 1 | Single | 83W | 1 | R-PSSO-G2 | 19 ns | 19ns | 33 ns | 32 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 2500V | 83W Tc | 0.2A | 0.6A | 2.5kV | N-Channel | 116pF @ 25V | 450 Ω @ 50mA, 10V | 4.5V @ 250μA | 200mA Tc | 7.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTX660N04T4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 28 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW90R120C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw90r120c3xksa1-datasheets-4301.pdf | TO-247-3 | 18 Weeks | 900V | 417W Tc | N-Channel | 6800nF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 2.9mA | 36A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH13N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/ixys-ixth13n80-datasheets-4302.pdf | TO-247-3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 33ns | 32 ns | 63 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 52A | 0.8Ohm | 800V | N-Channel | 4500pF @ 25V | 800m Ω @ 500mA, 10V | 4.5V @ 250μA | 13A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APT5018BFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5018bfllg-datasheets-4303.pdf | 500V | 27A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 300W | 300W | 1 | TO-247 [B] | 2.596nF | 9 ns | 4ns | 2 ns | 18 ns | 27A | 30V | 500V | N-Channel | 2596pF @ 25V | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 27A Tc | 58nC @ 10V | 180 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| C3M0065090J-TR | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SiCFET (Silicon Carbide) | RoHS Compliant | 2015 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 23 Weeks | 7 | D2PAK-7 | 900V | 113W Tc | 65mOhm | N-Channel | 660pF @ 600V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 35A Tc | 30nC @ 15V | 15V | +19V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT22F80S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt22f80s-datasheets-4308.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 34 Weeks | yes | AVALANCHE RATED, HIGH RELIABILITY | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 1 | Not Qualified | R-PSSO-G2 | 23A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 625W Tc | 85A | 0.43Ohm | 975 mJ | N-Channel | 4595pF @ 25V | 430m Ω @ 12A, 10V | 5V @ 1mA | 23A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT34N80LC3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt34n80lc3g-datasheets-4309.pdf | 800V | 34A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 24 Weeks | 10.6g | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 417W | 1 | Not Qualified | R-PSFM-T3 | 25 ns | 15ns | 6 ns | 70 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 417W Tc | 670 mJ | N-Channel | 4510pF @ 25V | 145m Ω @ 22A, 10V | 3.9V @ 2mA | 34A Tc | 355nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFX120N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk120n30t-datasheets-4284.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 960W Tc | 0.024Ohm | 2500 mJ | N-Channel | 20000pF @ 25V | 24m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 265nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| APT24M80B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt24m80b-datasheets-4313.pdf | 800V | 24A | TO-247-3 | Lead Free | 3 | 29 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 625W | 1 | R-PSFM-T3 | 26 ns | 38ns | 33 ns | 115 ns | 25A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 625W Tc | TO-247AD | 85A | 0.39Ohm | 975 mJ | N-Channel | 4595pF @ 25V | 390m Ω @ 12A, 10V | 5V @ 1mA | 25A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFK74N50P2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk74n50p2-datasheets-4293.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 26 Weeks | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.4kW | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 74A | 30V | SILICON | DRAIN | SWITCHING | 1400W Tc | 185A | 0.077Ohm | 3000 mJ | 500V | N-Channel | 9900pF @ 25V | 77m Ω @ 500mA, 10V | 5V @ 4mA | 74A Tc | 165nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTH72N20 | IXYS | $2.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth72n20-datasheets-4294.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 30ns | 20 ns | 80 ns | 72A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 288A | 1500 mJ | 200V | N-Channel | 4400pF @ 25V | 33m Ω @ 500mA, 10V | 4V @ 250μA | 72A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFR44N50P | IXYS | $14.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr44n50p-datasheets-4277.pdf | 500V | 44A | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 150MOhm | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | Not Qualified | 27ns | 18 ns | 70 ns | 24A | 30V | SILICON | ISOLATED | SWITCHING | 208W Tc | 1700 mJ | 500V | N-Channel | 5440pF @ 25V | 150m Ω @ 22A, 10V | 5V @ 4mA | 24A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTH30N50L | IXYS | $77.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50l-datasheets-4278.pdf | TO-247-3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 500V | 500V | 400W Tc | 60A | 0.2Ohm | 1500 mJ | N-Channel | 10200pF @ 25V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SCTWA20N120 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | SCTWA | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH2N150L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixth2n150l-datasheets-4279.pdf | TO-247-3 | 24 Weeks | 2A | 1500V | 290W Tc | N-Channel | 1470pF @ 25V | 15 Ω @ 1A, 20V | 8.5V @ 250μA | 2A Tc | 72nC @ 20V | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT88N30P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfh88n30p-datasheets-7053.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 88A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 600W Tc | 220A | 0.04Ohm | 2000 mJ | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 4mA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFX32N80P | IXYS | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n80p-datasheets-4281.pdf | TO-247-3 | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | 24ns | 24 ns | 85 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 0.27Ohm | 2000 mJ | 800V | N-Channel | 8800pF @ 25V | 270m Ω @ 16A, 10V | 5V @ 8mA | 32A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTT10P60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth10p60-datasheets-2057.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 3 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 300W Tc | 40A | 1Ohm | P-Channel | 4700pF @ 25V | 1 Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFK120N30T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk120n30t-datasheets-4284.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 960W Tc | 330A | 0.024Ohm | 2500 mJ | N-Channel | 20000pF @ 25V | 24m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 265nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFR26N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n50-datasheets-4223.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 33ns | 30 ns | 65 ns | 26A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 24A | 104A | 0.2Ohm | 500V | N-Channel | 4200pF @ 25V | 200m Ω @ 13A, 10V | 4V @ 4mA | 26A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFR18N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfr18n90p-datasheets-4287.pdf | ISOPLUS247™ | 3 | 30 Weeks | 247 | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 10.5A | 30V | SILICON | ISOLATED | SWITCHING | 200W Tc | 36A | 0.66Ohm | 800 mJ | 900V | N-Channel | 5230pF @ 25V | 660m Ω @ 9A, 10V | 6V @ 1mA | 10.5A Tc | 97nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTH64N65X | IXYS | $13.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth64n65x-datasheets-4289.pdf | TO-247-3 | 15 Weeks | 64A | 650V | 890W Tc | N-Channel | 5500pF @ 25V | 51m Ω @ 32A, 10V | 5V @ 250μA | 64A Tc | 143nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH150N15P | IXYS | $7.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n15p-datasheets-4247.pdf | TO-247-3 | Lead Free | 3 | 20 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | Not Qualified | R-PSFM-T3 | 33ns | 28 ns | 100 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | TO-247AD | 340A | 0.013Ohm | 2500 mJ | 150V | N-Channel | 5800pF @ 25V | 13m Ω @ 500mA, 10V | 5V @ 4mA | 150A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFR36N60P | IXYS | $3.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr36n60p-datasheets-4292.pdf | 600V | 36A | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | Not Qualified | 2.5kV | 25ns | 22 ns | 80 ns | 20A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 208W Tc | 80A | 0.2Ohm | 1500 mJ | 600V | N-Channel | 5800pF @ 25V | 200m Ω @ 18A, 10V | 5V @ 4mA | 20A Tc | 102nC @ 10V | 10V | ±30V |
