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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFH94N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfh94n30t-datasheets-4270.pdf | TO-247-3 | 3 | 30 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 94A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 890W Tc | TO-247AD | 235A | 0.036Ohm | 500 mJ | N-Channel | 11400pF @ 25V | 36m Ω @ 47A, 10V | 5V @ 4mA | 94A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APT5024SLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5024bllg-datasheets-4159.pdf | 500V | 22A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 265W | 1 | D3 [S] | 8 ns | 6ns | 2 ns | 18 ns | 22A | 30V | 500V | N-Channel | 1900pF @ 25V | 240mOhm @ 11A, 10V | 5V @ 1mA | 22A Tc | 43nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT20N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixfh20n100p-datasheets-7106.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 570MOhm | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 660W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 37ns | 45 ns | 56 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 660W Tc | 50A | 800 mJ | 1kV | N-Channel | 7300pF @ 25V | 570m Ω @ 10A, 10V | 6.5V @ 1mA | 20A Tc | 126nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFX140N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk140n25t-datasheets-4863.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 960W Tc | 380A | 0.017Ohm | 3000 mJ | N-Channel | 19000pF @ 25V | 17m Ω @ 60A, 10V | 5V @ 4mA | 140A Tc | 255nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFR24N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n80p-datasheets-4275.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | Not Qualified | 27ns | 24 ns | 75 ns | 13A | SILICON | ISOLATED | SWITCHING | 208W Tc | 55A | 0.42Ohm | 1500 mJ | 800V | N-Channel | 7200pF @ 25V | 420m Ω @ 12A, 10V | 5V @ 4mA | 13A Tc | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT6038BFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6038bfllg-datasheets-4276.pdf | 600V | 17A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 265W | 265W | 1 | TO-247 [B] | 1.85nF | 9 ns | 3ns | 4 ns | 17 ns | 17A | 30V | 600V | N-Channel | 1850pF @ 25V | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 17A Tc | 43nC @ 10V | 380 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFT18N90P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n90p-datasheets-7103.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 36A | 0.6Ohm | 800 mJ | 900V | N-Channel | 5230pF @ 25V | 600m Ω @ 500mA, 10V | 6.5V @ 1mA | 18A Tc | 97nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT6038BLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6038bllg-datasheets-4256.pdf | 600V | 17A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 265W | 265W | 1 | TO-247 [B] | 1.85nF | 9 ns | 3ns | 4 ns | 17 ns | 17A | 30V | 600V | N-Channel | 1850pF @ 25V | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 17A Tc | 43nC @ 10V | 380 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| IPC65R037C6X1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPF50 | Vishay Siliconix | $1.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf50pbf-datasheets-6872.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 6 Weeks | 38.000013g | 3 | 1 | Single | TO-247-3 | 2.9nF | 20 ns | 34ns | 37 ns | 130 ns | 6.7A | 20V | 900V | 190W Tc | 1.6Ohm | N-Channel | 2900pF @ 25V | 1.6Ohm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 200nC @ 10V | 1.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFT50N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixft50n20-datasheets-4262.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 45MOhm | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15ns | 16 ns | 72 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 200A | 200V | N-Channel | 4400pF @ 25V | 45m Ω @ 25A, 10V | 4V @ 4mA | 50A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFX180N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfx180n15p-datasheets-4263.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 11MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | 32ns | 36 ns | 150 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 830W Tc | 4000 mJ | 150V | N-Channel | 7000pF @ 25V | 11m Ω @ 90A, 10V | 5V @ 4mA | 180A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFQ94N30P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh94n30p3-datasheets-3561.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | Single | 1 | FET General Purpose Power | 23 ns | 49 ns | 94A | 20V | SILICON | DRAIN | SWITCHING | 300V | 1040W Tc | 2500 mJ | N-Channel | 5510pF @ 25V | 36m Ω @ 47A, 10V | 5V @ 4mA | 94A Tc | 102nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFT15N100Q3-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 1000V | 690W Tc | N-Channel | 3250pF @ 25V | 1.05 Ω @ 7.5A, 10V | 6.5V @ 4mA | 15A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH120N25T | IXYS | $65.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfh120n25t-datasheets-4267.pdf | TO-247-3 | 3 | 30 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 890W Tc | TO-247AD | 300A | 0.023Ohm | 500 mJ | N-Channel | 11300pF @ 25V | 23m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTH50N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixth50n20-datasheets-4268.pdf | 200V | 50A | TO-247-3 | Lead Free | 3 | 28 Weeks | No SVHC | 45mOhm | 3 | yes | EAR99 | No | 3 | Single | 300W | 1 | FET General Purpose Power | 15ns | 16 ns | 72 ns | 50A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-247AD | 200A | 200V | N-Channel | 4600pF @ 25V | 4 V | 45m Ω @ 25A, 10V | 4V @ 250μA | 50A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFK150N15P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n15p-datasheets-4247.pdf | TO-264-3, TO-264AA | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | Not Qualified | R-PSFM-T3 | 33ns | 28 ns | 100 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | 340A | 2500 mJ | 150V | N-Channel | 5800pF @ 25V | 13m Ω @ 500mA, 10V | 5V @ 4mA | 150A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTR90P10P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr90p10p-datasheets-4248.pdf | ISOPLUS247™ | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 57A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 190W Tc | 225A | 0.027Ohm | 2500 mJ | P-Channel | 5800pF @ 25V | 27m Ω @ 45A, 10V | 4V @ 250μA | 57A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTT88N15 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtt88n15-datasheets-4249.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 400W | 1 | R-PSSO-G2 | 33ns | 18 ns | 80 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 352A | 0.022Ohm | 150V | N-Channel | 4000pF @ 25V | 22m Ω @ 44A, 10V | 4V @ 250μA | 88A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| APT14F100S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt14f100s-datasheets-4250.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 22 Weeks | 3 | yes | AVALANCHE RATED, HIGH RELIABILITY | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 500W | 1 | Not Qualified | R-PSSO-G2 | 14A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 500W Tc | 56A | 0.98Ohm | 875 mJ | N-Channel | 3965pF @ 25V | 980m Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFT60N65X2HV | IXYS | $12.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft60n65x2hv-datasheets-4251.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 650V | 780W Tc | N-Channel | 6300pF @ 25V | 52m Ω @ 30A, 10V | 5V @ 4mA | 60A Tc | 108nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK220N17T2 | IXYS | $12.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfx220n17t2-datasheets-4243.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1250W Tc | 550A | 0.0063Ohm | 2000 mJ | N-Channel | 31000pF @ 25V | 6.3m Ω @ 60A, 10V | 5V @ 8mA | 220A Tc | 500nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFR16N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 18 Weeks | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC65R080CFDX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT340N075T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfh340n075t2-datasheets-2443.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 340A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 935W Tc | 850A | 960 mJ | N-Channel | 19000pF @ 25V | 3.2m Ω @ 100A, 10V | 4V @ 3mA | 340A Tc | 300nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||
| IXFX78N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk78n50p3-datasheets-2126.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED | unknown | 3 | Single | 1.13kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 30 ns | 10ns | 7 ns | 60 ns | 78A | 30V | SILICON | DRAIN | SWITCHING | 1130W Tc | 200A | 0.068Ohm | 1500 mJ | 500V | N-Channel | 9900pF @ 25V | 68m Ω @ 500mA, 10V | 5V @ 4mA | 78A Tc | 147nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFH12N100F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/ixys-ixfh12n100f-datasheets-4242.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | 9.8ns | 12 ns | 31 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 3V | 300W Tc | TO-247 | 48A | 1kV | N-Channel | 2700pF @ 25V | 1.05 Ω @ 6A, 10V | 5.5V @ 4mA | 12A Tc | 77nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFX220N17T2 | IXYS | $12.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfx220n17t2-datasheets-4243.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1250W Tc | 550A | 0.0063Ohm | 2000 mJ | N-Channel | 31000pF @ 25V | 6.3m Ω @ 60A, 10V | 5V @ 8mA | 220A Tc | 500nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTR16P60P | IXYS | $10.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtr16p60p-datasheets-4244.pdf | ISOPLUS247™ | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 190W Tc | 48A | 0.79Ohm | 2500 mJ | P-Channel | 5120pF @ 25V | 790m Ω @ 8A, 10V | 4.5V @ 250μA | 10A Tc | 92nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTR20P50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtr20p50p-datasheets-4245.pdf | ISOPLUS247™ | 3 | 28 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 190W Tc | 60A | 0.49Ohm | 2500 mJ | P-Channel | 5120pF @ 25V | 490m Ω @ 10A, 10V | 4.5V @ 250μA | 13A Tc | 103nC @ 10V | 10V | ±20V |
