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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXT-1-1N100S1-TR | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOIC | 1.5A | 1000V | N-Channel | 1.5A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK31J60W5,S1VQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-3P-3, SC-65-3 | 3nF | 16 Weeks | Single | 230W | TO-3P(N) | 3nF | 32ns | 8.5 ns | 165 ns | 30.8A | 30V | 600V | 230W Tc | 73mOhm | 600V | N-Channel | 3000pF @ 300V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 105nC @ 10V | Super Junction | 88 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCTH35N65G2V-7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-scth35n65g2v7-datasheets-4083.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | NOT SPECIFIED | 650V | 208W Tc | N-Channel | 1370pF @ 400V | 67m Ω @ 20A, 20V | 3.2V @ 1mA | 45A Tc | 73nC @ 20V | 18V 20V | +22V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW70N65DM6-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw70n65dm64-datasheets-4105.pdf | TO-247-4 | 12 Weeks | compliant | 650V | 450W Tc | N-Channel | 4900pF @ 100V | 40m Ω @ 34A, 10V | 4.75V @ 250μA | 68A Tc | 125nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTJ4N150 | IXYS | $9.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtj4n150-datasheets-4084.pdf | TO-247-3 | 3 | 24 Weeks | AVALANCHE RATED, UL RECOGNIZED | SINGLE | 1 | FET General Purpose Power | R-PSFM-T3 | 2.5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1500V | 1500V | 110W Tc | 12A | 6Ohm | 350 mJ | N-Channel | 1576pF @ 25V | 6 Ω @ 2A, 10V | 5V @ 250μA | 2.5A Tc | 44.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT50P10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth50p10-datasheets-2723.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 55MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 39ns | 38 ns | 86 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 100V | 300W Tc | 200A | -100V | P-Channel | 4350pF @ 25V | 55m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFQ90N20X3 | IXYS | $8.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp90n20x3-datasheets-4520.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT80N30P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | TO-268 | 14 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH041N65F-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fch041n65ff155-datasheets-4088.pdf | TO-247-3 | 3 | 12 Weeks | 6.39g | 44mOhm | ACTIVE (Last Updated: 5 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 60 ns | 47ns | 6.5 ns | 190 ns | 76A | 30V | SILICON | SWITCHING | 650V | 650V | 595W Tc | TO-247AB | 228A | 2025 mJ | N-Channel | 13020pF @ 100V | 41m Ω @ 38A, 10V | 5V @ 7.6mA | 76A Tc | 294nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFH26N65X2 | IXYS | $9.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 23 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCTWA10N120 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | SCTWA | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30F50S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30f50b-datasheets-4648.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 23 Weeks | 3 | yes | FAST SWITCHING, AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 415W | 1 | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 415W Tc | 90A | N-Channel | 4525pF @ 25V | 190m Ω @ 14A, 10V | 5V @ 1mA | 30A Tc | 115nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFH69N30P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh69n30p-datasheets-4070.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 20 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 25 ns | 25ns | 27 ns | 75 ns | 69A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | TO-247AD | 200A | 0.049Ohm | 1500 mJ | 300V | N-Channel | 4960pF @ 25V | 49m Ω @ 500mA, 10V | 5V @ 4mA | 69A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTP20N65XM | IXYS | $7.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtp20n65xm-datasheets-4071.pdf | TO-220-3 | 15 Weeks | 9A | 650V | 63W Tc | N-Channel | 1390pF @ 25V | 210m Ω @ 10A, 10V | 5.5V @ 250μA | 9A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW35N60CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spw35n60cfdfksa1-datasheets-4072.pdf | TO-247-3 | 3 | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 600V | 600V | 313W Tc | TO-247AA | 34.1A | 85A | 0.118Ohm | 1300 mJ | N-Channel | 5060pF @ 25V | 118m Ω @ 21.6A, 10V | 5V @ 1.9mA | 34.1A Tc | 212nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDM15-06KC5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-fmd1506kc5-datasheets-3967.pdf | ISOPLUSi5-Pak™ | 5 | yes | HIGH RELIABILITY, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T5 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 0.165Ohm | 522 mJ | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 15A Tc | 52nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ44N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq44n50p-datasheets-4077.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 650W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 658W Tc | 110A | 0.14Ohm | 1700 mJ | 500V | N-Channel | 5440pF @ 25V | 140m Ω @ 22A, 10V | 5V @ 250μA | 44A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPZA60R045P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipza60r045p7xksa1-datasheets-4078.pdf | TO-247-4 | 18 Weeks | 650V | 201W Tc | N-Channel | 3891pF @ 400V | 45m Ω @ 22.5A, 10V | 4V @ 1.08mA | 61A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT7M120S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt7m120s-datasheets-4051.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | DUAL | GULL WING | 245 | 3 | 30 | 1 | Not Qualified | R-PDSO-G2 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 1200V | 335W Tc | 7A | 2.5Ohm | 575 mJ | N-Channel | 2565pF @ 25V | 2.1 Ω @ 3A, 10V | 5V @ 1mA | 8A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFR20N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfr20n80p-datasheets-4080.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | Not Qualified | 24ns | 25 ns | 70 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 166W Tc | 0.5Ohm | 1000 mJ | 800V | N-Channel | 4680pF @ 25V | 500m Ω @ 10A, 10V | 5V @ 4mA | 11A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| R6020JNZC8 | ROHM Semiconductor | $9.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3 Full Pack | NOT SPECIFIED | NOT SPECIFIED | 600V | 76W Tc | N-Channel | 1500pF @ 100V | 234m Ω @ 10A, 15V | 7V @ 3.5mA | 20A Tc | 45nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH7N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh7n80-datasheets-4081.pdf | 800V | 7A | TO-247-3 | 3 | 8 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 40ns | 60 ns | 100 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 7A | 28A | 800V | N-Channel | 2800pF @ 25V | 1.4 Ω @ 3.5A, 10V | 4.5V @ 2.5mA | 7A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIPC69N60CFDX1SA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB30N60AEL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EL | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 600V | 250W Tc | N-Channel | 2565pF @ 100V | 120mOhm @ 15A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT96N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq96n20p-datasheets-5608.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 24mOhm | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 30 ns | 75 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 225A | 1500 mJ | 200V | N-Channel | 4800pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 250μA | 96A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFS3107PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3107trlpbf-datasheets-0289.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | No SVHC | 3 | EAR99 | No | Single | 370W | 1 | 19 ns | 110ns | 100 ns | 99 ns | 230A | 20V | 75V | 2.35V | 370W Tc | 54 ns | 75V | N-Channel | 9370pF @ 50V | 2.35 V | 3m Ω @ 140A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTH52N65X | IXYS | $0.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth52n65x-datasheets-4068.pdf | TO-247-3 | 15 Weeks | 52A | 650V | 660W Tc | N-Channel | 4350pF @ 25V | 68m Ω @ 26A, 10V | 5V @ 250μA | 52A Tc | 113nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT11P50-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 500V | 300W Tc | P-Channel | 4700pF @ 25V | 750m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH160N15T | IXYS | $17.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth160n15t-datasheets-4041.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 830W Tc | TO-247AD | 430A | 0.0096Ohm | 1000 mJ | N-Channel | 8800pF @ 25V | 9.6m Ω @ 500mA, 10V | 5V @ 1mA | 160A Tc | 160nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IPB65R045C7ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r045c7atma2-datasheets-4009.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | NOT SPECIFIED | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 227W Tc | 46A | 212A | 0.045Ohm | 249 mJ | N-Channel | 4340pF @ 400V | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 46A Tc | 93nC @ 10V | 10V | ±20V |
