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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTR36P15P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtr36p15p-datasheets-4025.pdf | ISOPLUS247™ | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | 150W Tc | TO-247AD | 100A | 0.12Ohm | 1500 mJ | P-Channel | 2950pF @ 25V | 120m Ω @ 18A, 10V | 5V @ 250μA | 22A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTT26N60P | IXYS | $13.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth26n60p-datasheets-3794.pdf | 600V | 26A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 250μA | 26A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTA15N50L2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 500V | 300W Tc | N-Channel | 4080pF @ 25V | 480m Ω @ 7.5A, 10V | 4.5V @ 250μA | 15A Tc | 123nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R074C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r074c6xksa1-datasheets-4027.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 11 ns | 7ns | 4 ns | 56 ns | 57.7A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 480.8W Tc | TO-220AB | 151A | 0.074Ohm | 915 mJ | 700V | N-Channel | 3020pF @ 100V | 74m Ω @ 13.9A, 10V | 3.5V @ 1.4mA | 57.7A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SIPC69N60C3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH085N80-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch085n80f155-datasheets-4032.pdf | TO-247-3 | 12 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 46A | 800V | 4.5V | 446W Tc | N-Channel | 10825pF @ 100V | 85m Ω @ 23A, 10V | 4.5V @ 4.6mA | 46A Tc | 255nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFT150N17T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Surface Mount | -55°C~175°C TJ | Tube | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/ixys-ixfh150n17t2-datasheets-5648.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 175V | 175V | 880W Tc | 150A | 400A | 0.012Ohm | 1000 mJ | N-Channel | 14600pF @ 25V | 12m Ω @ 75A, 10V | 4.5V @ 1mA | 150A Tc | 233nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFT96N20P | IXYS | $9.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh96n20p-datasheets-3565.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 30 ns | 75 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 225A | 0.024Ohm | 1500 mJ | 200V | N-Channel | 4800pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 4mA | 96A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTH160N15T | IXYS | $17.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth160n15t-datasheets-4041.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 830W Tc | TO-247AD | 430A | 0.0096Ohm | 1000 mJ | N-Channel | 8800pF @ 25V | 9.6m Ω @ 500mA, 10V | 5V @ 1mA | 160A Tc | 160nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IPB65R045C7ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r045c7atma2-datasheets-4009.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | NOT SPECIFIED | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 227W Tc | 46A | 212A | 0.045Ohm | 249 mJ | N-Channel | 4340pF @ 400V | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 46A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH130N15X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfa130n15x3-datasheets-3968.pdf | TO-247-3 | 19 Weeks | compliant | 150V | 390W Tc | N-Channel | 5230pF @ 25V | 9m Ω @ 65A, 10V | 4.5V @ 1.5mA | 130A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ200N06P | IXYS | $8.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq200n06p-datasheets-4045.pdf | TO-3P-3, SC-65-3 | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | Not Qualified | 60ns | 40 ns | 90 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | 400A | 0.006Ohm | 4000 mJ | 60V | N-Channel | 5400pF @ 25V | 5m Ω @ 400A, 15V | 5V @ 250μA | 200A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTT30N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50p-datasheets-3823.pdf | 500V | 30A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| STWA58N65DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-247-3 | compliant | 650V | N-Channel | 48A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH32P20T | IXYS | $38.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp32p20t-datasheets-5492.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 300W Tc | TO-247AD | 96A | 0.13Ohm | 1000 mJ | P-Channel | 14500pF @ 25V | 130m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 185nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| IXFQ21N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 21A | 500V | N-Channel | 21A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R045P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r045p7xksa1-datasheets-3996.pdf | TO-247-3 | 18 Weeks | 650V | 201W Tc | N-Channel | 3891pF @ 400V | 45m Ω @ 22.5A, 10V | 4V @ 1.08mA | 61A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK35N65W5,S1F | Toshiba Semiconductor and Storage | $4.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 38.000013g | 3 | No | 1 | Single | 110 ns | 55ns | 8 ns | 150 ns | 35A | 30V | 270W Tc | 650V | N-Channel | 4100pF @ 300V | 95m Ω @ 17.5A, 10V | 4.5V @ 2.1mA | 35A Ta | 115nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PCFQ8P10W | MICROSS/On Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tray | 3 (168 Hours) | RoHS Compliant | Die | 4 Weeks | Die | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH80N075L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtp80n075l2-datasheets-0936.pdf | TO-247-3 | 28 Weeks | 80A | 75V | 357W Tc | N-Channel | 3600pF @ 25V | 24m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 103nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTH4L040N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nth4l040n65s3f-datasheets-4000.pdf | TO-247-4 | 4 | 18 Weeks | yes | NO | SINGLE | 1 | R-PSFM-T4 | SILICON | SINGLE | ISOLATED | SWITCHING | 650V | 650V | 446W Tc | 65A | 162.5A | 0.04Ohm | 1009 mJ | N-Channel | 5940pF @ 400V | 40m Ω @ 32.5A, 10V | 5V @ 2.1mA | 65A Tc | 158nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ50N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60x-datasheets-4003.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 50A | 600V | 660W Tc | N-Channel | 4660pF @ 25V | 73m Ω @ 25A, 10V | 4.5V @ 4mA | 50A Tc | 116nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT6N120-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 1200V | 300W Tc | N-Channel | 1950pF @ 25V | 2.6 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFP4568 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfp4568-datasheets-4004.pdf | TO-247-3 | 3 | 16 Weeks | 4.8mOhm | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 171A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 517W Tc | TO-247AC | 684A | 763 mJ | N-Channel | 10470pF @ 50V | 5.9m Ω @ 103A, 10V | 5V @ 250μA | 171A Tc | 227nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFT20N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh20n80p-datasheets-5587.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 500W | 1 | R-PSSO-G2 | 24ns | 24 ns | 85 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 0.52Ohm | 800V | N-Channel | 4685pF @ 25V | 520m Ω @ 10A, 10V | 5V @ 4mA | 20A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTH44P15T | IXYS | $6.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp44p15t-datasheets-5534.pdf | TO-247-3 | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 298W Tc | 130A | 0.065Ohm | 1000 mJ | P-Channel | 13400pF @ 25V | 65m Ω @ 500mA, 10V | 4V @ 250μA | 44A Tc | 175nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||
| IXFH18N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp18n60x-datasheets-3822.pdf | TO-247-3 | 19 Weeks | 18A | 600V | 320W Tc | N-Channel | 1440pF @ 25V | 230m Ω @ 9A, 10V | 4.5V @ 1.5mA | 18A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA72N60DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stwa72n60dm2ag-datasheets-4013.pdf | TO-247-3 | 17 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 446W Tc | N-Channel | 5508pF @ 100V | 42m Ω @ 33A, 10V | 5V @ 250μA | 66A Tc | 121nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP6N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfa6n120p-datasheets-9264.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 250W Tc | TO-220AB | 6A | 18A | 0.0024Ohm | N-Channel | 2830pF @ 25V | 2.4 Ω @ 500mA, 10V | 5V @ 1mA | 6A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFT50N60P3 | IXYS | $11.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60p3-datasheets-1666.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 31 ns | 20ns | 17 ns | 62 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 125A | 0.145Ohm | 1000 mJ | 600V | N-Channel | 6300pF @ 25V | 145m Ω @ 500mA, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V |
