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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFK120N25P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfx120n25p-datasheets-7049.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 700W | 1 | FET General Purpose Power | R-PSFM-T3 | 33ns | 33 ns | 130 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 700W Tc | 300A | 0.024Ohm | 2500 mJ | 250V | N-Channel | 8000pF @ 25V | 24m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFT13N80Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft13n80q-datasheets-4344.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 36ns | 19 ns | 55 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 250W Tc | 52A | 0.8Ohm | 750 mJ | 800V | N-Channel | 3250pF @ 25V | 700m Ω @ 6.5A, 10V | 4.5V @ 4mA | 13A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| APT20M45BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m45bvrg-datasheets-4345.pdf | 200V | 56A | TO-247-3 | Lead Free | 3 | 31 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | No | Pure Matte Tin (Sn) | SINGLE | 3 | 300W | 1 | FET General Purpose Power | R-PSFM-T3 | 12 ns | 14ns | 7 ns | 43 ns | 56A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 224A | 0.045Ohm | N-Channel | 4860pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 1mA | 56A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTQ30N50L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtt30n50l2-datasheets-3664.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | SINGLE | 3 | 400W | 1 | FET General Purpose Power | 30A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 500V | 500V | 2.5V | 400W Tc | 60A | 0.2Ohm | N-Channel | 8100pF @ 25V | 2.5 V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTH48N15 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixth48n15-datasheets-4350.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | 20ns | 17 ns | 68 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-247AD | 192A | 1000 mJ | 150V | N-Channel | 3200pF @ 25V | 32m Ω @ 500mA, 10V | 48A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFT320N10T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 100V | 1kW Tc | N-Channel | 26000pF @ 25V | 3.5m Ω @ 100A, 10V | 4V @ 250μA | 320A Tc | 430nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX62N25 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx62n25-datasheets-4351.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 390W | 1 | FET General Purpose Power | Not Qualified | 25ns | 15 ns | 115 ns | 62A | 20V | SILICON | DRAIN | SWITCHING | 390W Tc | 248A | 1500 mJ | 250V | N-Channel | 6600pF @ 25V | 35m Ω @ 31A, 10V | 4V @ 4mA | 62A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTH50N30 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth50n30-datasheets-4352.pdf | TO-247-3 | 3 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 400W | 1 | R-PSIP-T3 | 33ns | 17 ns | 70 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 200A | 0.065Ohm | 300V | N-Channel | 4400pF @ 25V | 65m Ω @ 25A, 10V | 4V @ 250μA | 50A Tc | 165nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APT30M85BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30m85bvrg-datasheets-4353.pdf | 300V | 40A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 31 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 300W | 1 | R-PSFM-T3 | 12 ns | 10ns | 7 ns | 43 ns | 40A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | TO-247AD | 0.085Ohm | 300V | N-Channel | 4950pF @ 25V | 85m Ω @ 500mA, 10V | 4V @ 1mA | 40A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| PCFQ17P10W | MICROSS/On Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 175°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-pcfq17p10w-datasheets-0161.pdf | 4 Weeks | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT20N120AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~200°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sct20n120ag-datasheets-4355.pdf | TO-247-3 | compliant | NOT SPECIFIED | NOT SPECIFIED | 1200V | 153W Tc | N-Channel | 650pF @ 400V | 239m Ω @ 10A, 20V | 3.5V @ 1mA | 20A Tc | 45nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT42F50S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt42f50b-datasheets-2108.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 23 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 1 | R-PSSO-G2 | 29 ns | 35ns | 26 ns | 80 ns | 42A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 625W Tc | N-Channel | 6810pF @ 25V | 130m Ω @ 21A, 10V | 5V @ 1mA | 42A Tc | 170nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTH20N60 | IXYS | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixth20n60-datasheets-4357.pdf | 600V | 20A | TO-247-3 | Lead Free | 3 | 8 Weeks | 350mOhm | 3 | yes | No | 3 | Single | 300W | 1 | FET General Purpose Power | 43ns | 40 ns | 70 ns | 20A | 20V | SILICON | ISOLATED | SWITCHING | 300W Tc | TO-247AD | 80A | 600V | N-Channel | 4500pF @ 25V | 350m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FMD21-05QC | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-fmd2105qc-datasheets-4340.pdf | i4-Pac™-5 | Lead Free | 5 | 20 Weeks | 190MOhm | 5 | yes | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 5 | Single | 192W | 1 | FET General Purpose Power | 20ns | 15 ns | 50 ns | 21A | 20V | SILICON | ISOLATED | SWITCHING | 500V | N-Channel | 220m Ω @ 15A, 10V | 4.5V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTK88N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq88n30p-datasheets-2251.pdf | TO-264-3, TO-264AA | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PSFM-T3 | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 220A | 0.04Ohm | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 250μA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| APT17F100S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt17f100s-datasheets-4318.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 3 | yes | EAR99 | HIGH RELIABILITY, AVALANCHE RATED | No | Pure Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | 30 | 625W | 1 | R-PSSO-G2 | 17A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 625W Tc | 68A | 0.8Ohm | N-Channel | 4845pF @ 25V | 780m Ω @ 9A, 10V | 5V @ 1mA | 17A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT4014BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt4014bvfrg-datasheets-4319.pdf | 400V | 28A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 300W | 1 | TO-247 [B] | 3.6nF | 12 ns | 10ns | 8 ns | 47 ns | 28A | 30V | 400V | N-Channel | 3600pF @ 25V | 140mOhm @ 500mA, 10V | 4V @ 1mA | 28A Tc | 160nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| APT1003RSLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | /files/microsemicorporation-apt1003rbllg-datasheets-4266.pdf | 1kV | 4A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 139W | 1 | D3 [S] | 694pF | 8 ns | 4ns | 10 ns | 25 ns | 4A | 30V | 1000V | N-Channel | 694pF @ 25V | 3Ohm @ 2A, 10V | 5V @ 1mA | 4A Tc | 34nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTH440N055T2 | IXYS | $54.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt440n055t2-datasheets-3581.pdf | TO-247-3 | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 440A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1000W Tc | 1200A | 0.0018Ohm | 1500 mJ | N-Channel | 25000pF @ 25V | 1.8m Ω @ 100A, 10V | 4V @ 250μA | 440A Tc | 405nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FCH47N60-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fch47n60f085-datasheets-4322.pdf | TO-247-3 | 3 | yes | not_compliant | NO | SINGLE | NOT SPECIFIED | FCH47N60 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 417W Tc | 47A | 0.079Ohm | 810 mJ | N-Channel | 8000pF @ 25V | 79m Ω @ 47A, 10V | 5V @ 250μA | 47A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH60N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n60x-datasheets-4330.pdf | TO-247-3 | 19 Weeks | 60A | 600V | 890W Tc | N-Channel | 5800pF @ 25V | 55m Ω @ 30A, 10V | 4.5V @ 8mA | 60A Tc | 143nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX170N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n20t-datasheets-4838.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 170A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1150W Tc | 470A | 0.011Ohm | N-Channel | 19600pF @ 25V | 11m Ω @ 60A, 10V | 5V @ 4mA | 170A Tc | 265nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFT400N075T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfh400n075t2-datasheets-9152.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 400A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 1000W Tc | 1000A | 0.0023Ohm | 1500 mJ | N-Channel | 24000pF @ 25V | 2.3m Ω @ 100A, 10V | 4V @ 250μA | 400A Tc | 420nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFT24N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfh24n50-datasheets-4823.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 33ns | 30 ns | 65 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 96A | 0.23Ohm | 500V | N-Channel | 4200pF @ 25V | 230m Ω @ 12A, 10V | 4V @ 4mA | 24A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTH30N25 | IXYS | $35.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n25-datasheets-4335.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | 19ns | 17 ns | 79 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-247AD | 120A | 0.075Ohm | 1000 mJ | 250V | N-Channel | 3950pF @ 25V | 75m Ω @ 15A, 10V | 4V @ 250μA | 30A Tc | 136nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFQ60N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n60x-datasheets-4330.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 60A | 600V | 890W Tc | N-Channel | 5800pF @ 25V | 55m Ω @ 30A, 10V | 4.5V @ 8mA | 60A Tc | 143nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS37N50APBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineon-irfps37n50apbf-datasheets-0132.pdf | 500V | 36A | TO-274AA | Lead Free | 3 | 446W | SUPER-247™ (TO-274AA) | 98ns | 36A | 500V | 446W Tc | 500V | N-Channel | 5579pF @ 25V | 130mOhm @ 22A, 10V | 4V @ 250μA | 36A Tc | 180nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH11N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n80-datasheets-2163.pdf | 800V | 11A | TO-247-3 | Lead Free | 3 | 950mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 32 ns | 63 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 44A | 800V | N-Channel | 4200pF @ 25V | 950m Ω @ 500mA, 10V | 4.5V @ 4mA | 11A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTH500N04T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtt500n04t2-datasheets-4316.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 1kW | 1 | FET General Purpose Power | R-PSFM-T3 | 500A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1000W Tc | 800 mJ | N-Channel | 25000pF @ 25V | 1.6m Ω @ 100A, 10V | 3.5V @ 250μA | 500A Tc | 405nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFR70N15 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr70n15-datasheets-4295.pdf | ISOPLUS247™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | Not Qualified | 52ns | 25 ns | 70 ns | 67A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 70A | 0.028Ohm | 1000 mJ | 150V | N-Channel | 3600pF @ 25V | 28m Ω @ 35A, 10V | 4V @ 4mA | 67A Tc | 180nC @ 10V | 10V | ±20V |
