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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH36P15P | IXYS | $30.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp36p15p-datasheets-7043.pdf | TO-247-3 | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 36A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 300W Tc | 90A | 0.11Ohm | 1500 mJ | P-Channel | 3100pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFH30N60P | IXYS | $15.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60p-datasheets-3966.pdf | 600V | 30A | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | TO-247AD | 80A | 0.24Ohm | 600V | N-Channel | 4000pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| FMD15-06KC5 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-fmd1506kc5-datasheets-3967.pdf | ISOPLUSi5-Pak™ | 5 | 32 Weeks | yes | HIGH RELIABILITY, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T5 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 0.165Ohm | 522 mJ | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 15A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFA130N15X3 | IXYS | $7.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfa130n15x3-datasheets-3968.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 150V | 390W Tc | N-Channel | 5230pF @ 25V | 9m Ω @ 65A, 10V | 4.5V @ 1.5mA | 130A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA36N55X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ65R065C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipz65r065c7xksa1-datasheets-3969.pdf | TO-247-4 | Lead Free | 18 Weeks | 4 | Halogen Free | PG-TO247-4 | 3.02nF | 16 ns | 7ns | 72 ns | 33A | 20V | 650V | 650V | 171W Tc | 58mOhm | N-Channel | 3020pF @ 400V | 65mOhm @ 17.1A, 10V | 4V @ 850μA | 33A Tc | 64nC @ 10V | 65 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH7N100P | IXYS | $0.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh7n100p-datasheets-3974.pdf | TO-247-3 | 30 Weeks | NO | FET General Purpose Power | Single | 1000V | 300W Tc | 7A | N-Channel | 2590pF @ 25V | 1.9 Ω @ 3.5A, 10V | 6V @ 1mA | 7A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQL40N50F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fql40n50f-datasheets-3930.pdf | 500V | 40A | TO-264-3, TO-264AA | Lead Free | 3 | 5 Weeks | 6.756g | 110mOhm | ACTIVE (Last Updated: 2 weeks ago) | yes | EAR99 | No | Single | 460W | 1 | FET General Purpose Power | R-PSFM-T3 | 140 ns | 440ns | 250 ns | 350 ns | 40A | 30V | SILICON | SWITCHING | 460W Tc | 500V | N-Channel | 7500pF @ 25V | 110m Ω @ 20A, 10V | 5V @ 250μA | 40A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTH140P05T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtp140p05t-datasheets-1699.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 298W Tc | TO-247AD | 420A | 0.009Ohm | 1000 mJ | P-Channel | 13500pF @ 25V | 9m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 200nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||
| IXTH4N150 | IXYS | $28.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth4n150-datasheets-3936.pdf | TO-247-3 | 3 | 3 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 1500V | 280W Tc | 4A | 12A | 6Ohm | 350 mJ | N-Channel | 1576pF @ 25V | 6 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 44.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTK82N25P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq82n25p-datasheets-3903.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSFM-T3 | 20ns | 22 ns | 78 ns | 82A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 200A | 0.035Ohm | 1000 mJ | 250V | N-Channel | 4800pF @ 25V | 35m Ω @ 41A, 10V | 5V @ 250μA | 82A Tc | 142nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTT8P50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixtt8p50-datasheets-3920.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 35 ns | 35 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 500V | 180W Tc | 8A | 32A | -500V | P-Channel | 3400pF @ 25V | 1.2 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXKC19N60C5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkc19n60c5-datasheets-3921.pdf | ISOPLUS220™ | 3 | 32 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 132W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 19A | 20V | SILICON | ISOLATED | SWITCHING | 0.125Ohm | 708 mJ | 600V | N-Channel | 2500pF @ 100V | 125m Ω @ 16A, 10V | 3.5V @ 1.1mA | 19A Tc | 70nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTP20N65X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtp20n65x-datasheets-3922.pdf | TO-220-3 | 15 Weeks | 20A | 650V | 320W Tc | N-Channel | 1390pF @ 25V | 210m Ω @ 10A, 10V | 5.5V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA02N250HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 2500V | 83W Tc | N-Channel | 116pF @ 25V | 450 Ω @ 50mA, 10V | 4.5V @ 250μA | 200mA Tc | 7.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV130N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 130A | 150V | N-Channel | 130A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT9F100B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt9f100b-datasheets-3923.pdf | TO-247-3 | 22 Weeks | TO-247 [B] | 1000V | 337W Tc | N-Channel | 2606pF @ 25V | 1.6Ohm @ 5A, 10V | 5V @ 1mA | 9A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA3N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfa3n80-datasheets-3925.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 11ns | 14 ns | 25 ns | 3.6A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 14.4A | 400 mJ | 800V | N-Channel | 685pF @ 25V | 3.6 Ω @ 500mA, 10V | 4.5V @ 1mA | 3.6A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTQ69N30PM | IXYS | $4.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2012 | TO-3P-3 Full Pack | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300V | 300V | 90W Tc | 25A | 200A | 0.049Ohm | 1500 mJ | N-Channel | 4960pF @ 25V | 49m Ω @ 34.5A, 10V | 5V @ 250μA | 25A Tc | 156nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SCT10N120AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~200°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sct10n120ag-datasheets-3926.pdf | TO-247-3 | compliant | NOT SPECIFIED | NOT SPECIFIED | 1200V | 150W Tc | N-Channel | 290pF @ 400V | 690m Ω @ 6A, 20V | 3.5V @ 250μA | 12A Tc | 22nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT140N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq140n10p-datasheets-3842.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 11MOhm | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 600W | 1 | FET General Purpose Powers | R-PSSO-G2 | 50ns | 26 ns | 85 ns | 140A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 300A | 2500 mJ | 100V | N-Channel | 4700pF @ 25V | 11m Ω @ 70A, 10V | 5V @ 250μA | 140A Tc | 155nC @ 10V | 10V 15V | ±20V | |||||||||||||||||||||||||||||||
| IXTT16P20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16A | 200V | P-Channel | 16A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKH30N60C5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkh30n60c5-datasheets-3928.pdf | TO-3P-3 Full Pack | 3 | 32 Weeks | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 30A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 0.125Ohm | 708 mJ | 600V | N-Channel | 2500pF @ 10V | 125m Ω @ 16A, 10V | 3.5V @ 1.1mA | 30A Tc | 70nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFT86N30T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixft86n30t-datasheets-3929.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 86A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 860W Tc | 190A | 2000 mJ | N-Channel | 11300pF @ 25V | 43m Ω @ 500mA, 10V | 5V @ 4mA | 86A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IPW60R099CPAFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipw60r099cpafksa1-datasheets-3892.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 10 ns | 5ns | 60 ns | 31A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 255W Tc | 0.105Ohm | 800 mJ | N-Channel | 2800pF @ 100V | 105m Ω @ 18A, 10V | 3.5V @ 1.2mA | 31A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFH110N25T | IXYS | $7.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh110n25t-datasheets-3917.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 694W Tc | TO-247AD | 300A | 0.024Ohm | 1000 mJ | N-Channel | 9400pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 3mA | 110A Tc | 157nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTH3N120 | IXYS | $7.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n120-datasheets-9177.pdf | TO-247-3 | 3 | 28 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | R-PSFM-T3 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 200W Tc | TO-247AD | 3A | 12A | 700 mJ | 1.2kV | N-Channel | 1300pF @ 25V | 4.5 Ω @ 500mA, 10V | 4.5V @ 250μA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| EPC2021ENGR | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2021engr-datasheets-3897.pdf | Die | Die | 1.7nF | 60A | 80V | N-Channel | 1700pF @ 40V | 2.5mOhm @ 29A, 5V | 2.5V @ 14mA | 60A Ta | 15nC @ 5V | 2.5 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP36N55X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ82N25P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq82n25p-datasheets-3903.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 22 ns | 78 ns | 82A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 200A | 1000 mJ | 250V | N-Channel | 4800pF @ 25V | 35m Ω @ 41A, 10V | 5V @ 250μA | 82A Tc | 142nC @ 10V | 10V | ±20V |
