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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPZ60R060C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-ipz60r060c7xksa1-datasheets-3907.pdf | TO-247-4 | Lead Free | 4 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | 35A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 162W Tc | 0.06Ohm | 159 mJ | N-Channel | 2850pF @ 400V | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 35A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTQ130N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-3P-3, SC-65-3 | 26 Weeks | compliant | 200V | 830W Tc | N-Channel | 8800pF @ 25V | 16m Ω @ 65A, 10V | 5V @ 1mA | 130A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP34N65X2M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 650V | 40W Tc | N-Channel | 3230pF @ 25V | 100m Ω @ 17A, 10V | 5V @ 1.5mA | 34A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV102N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 102A | 250V | N-Channel | 102A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R080CFDFKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw65r080cfdfksa2-datasheets-3913.pdf | TO-247-3 | 18 Weeks | 650V | 391W Tc | N-Channel | 5030pF @ 100V | 80m Ω @ 17.6A, 10V | 4.5V @ 1.8mA | 43.3A Tc | 167nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH34N50P3 | IXYS | $4.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfq34n50p3-datasheets-3778.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 30 Weeks | 3 | Single | 23 ns | 40 ns | 34A | 30V | 500V | 695W Tc | N-Channel | 3260pF @ 25V | 170m Ω @ 17A, 10V | 5V @ 4mA | 34A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTP3N110 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n110-datasheets-3916.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | R-PSFM-T3 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1100V | 150W Tc | TO-220AB | 3A | 12A | 4Ohm | 700 mJ | 1.1kV | N-Channel | 1350pF @ 25V | 4 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTT36P10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 36A | 100V | P-Channel | 36A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R099CPAFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipw60r099cpafksa1-datasheets-3892.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 10 ns | 5ns | 60 ns | 31A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 255W Tc | 0.105Ohm | 800 mJ | N-Channel | 2800pF @ 100V | 105m Ω @ 18A, 10V | 3.5V @ 1.2mA | 31A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFH110N25T | IXYS | $7.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh110n25t-datasheets-3917.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 694W Tc | TO-247AD | 300A | 0.024Ohm | 1000 mJ | N-Channel | 9400pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 3mA | 110A Tc | 157nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTH3N120 | IXYS | $7.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n120-datasheets-9177.pdf | TO-247-3 | 3 | 28 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | R-PSFM-T3 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 200W Tc | TO-247AD | 3A | 12A | 700 mJ | 1.2kV | N-Channel | 1300pF @ 25V | 4.5 Ω @ 500mA, 10V | 4.5V @ 250μA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFA18N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp18n60x-datasheets-3822.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 18A | 600V | 320W Tc | N-Channel | 1440pF @ 25V | 230m Ω @ 9A, 10V | 4.5V @ 1.5mA | 18A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ470P2 | IXYS | $15.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtq470p2-datasheets-3877.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 42A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 126A | 0.145Ohm | 1300 mJ | 500V | N-Channel | 5400pF @ 25V | 145m Ω @ 500mA, 10V | 4.5V @ 250μA | 42A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTT34N65X2HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtt34n65x2hv-datasheets-3878.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 15 Weeks | compliant | 650V | 540W Tc | N-Channel | 3000pF @ 25V | 96m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH14N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixft14n80p-datasheets-3875.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSFM-T3 | 62 ns | 14A | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 0.72Ohm | 500 mJ | 800V | N-Channel | 3900pF @ 25V | 720m Ω @ 500mA, 10V | 5.5V @ 4mA | 14A Tc | 61nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTQ30N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixth30n50p-datasheets-3823.pdf | 500V | 30A | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| C2M1000170J-TR | Cree/Wolfspeed | $3.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C2M™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | 2015 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 23 Weeks | D2PAK-7 | 1700V | 78W Tc | N-Channel | 200pF @ 1000V | 1.4Ohm @ 2A, 20V | 3.1V @ 500μA (Typ) | 5.3A Tc | 13nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT26N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt26n50p-datasheets-3884.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 78A | 0.23Ohm | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 250μA | 26A Tc | 65nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFP26N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH2R4N120P | IXYS | $7.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta2r4n120p-datasheets-6875.pdf | TO-247-3 | 3 | 28 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 25ns | 32 ns | 70 ns | 2.4A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 125W Tc | TO-247AD | 6A | 200 mJ | 1.2kV | N-Channel | 1207pF @ 25V | 7.5 Ω @ 500mA, 10V | 4.5V @ 250μA | 2.4A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXFH160N15T2 | IXYS | $2.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfh160n15t2-datasheets-3886.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 880W Tc | 440A | 0.009Ohm | 1500 mJ | N-Channel | 15000pF @ 25V | 9m Ω @ 80A, 10V | 4.5V @ 1mA | 160A Tc | 253nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| APT51M50J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt51m50j-datasheets-3887.pdf | 500V | 51A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 19 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 480W | 1 | 45 ns | 55ns | 39 ns | 120 ns | 51A | 30V | SILICON | ISOLATED | SWITCHING | 480W Tc | 230A | 0.075Ohm | 500V | N-Channel | 11600pF @ 25V | 75m Ω @ 37A, 10V | 5V @ 2.5mA | 51A Tc | 290nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXFT30N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n50p-datasheets-3825.pdf | 500V | 30A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 24 ns | 82 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IXFP16N85X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH60N15 | IXYS | $1.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth60n15-datasheets-3891.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 275W | 1 | Not Qualified | 20ns | 18 ns | 85 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 275W Tc | TO-247AD | 240A | 1000 mJ | 150V | N-Channel | 3000pF @ 25V | 33m Ω @ 15A, 10V | 4V @ 250μA | 60A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTQ3N150M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-3P-3 Full Pack | 24 Weeks | compliant | 1500V | 73W Tc | N-Channel | 1375pF @ 25V | 7.3 Ω @ 1.5A, 10V | 5V @ 250μA | 1.83A Tc | 38.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT14N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft14n80p-datasheets-3875.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 14A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 400W Tc | 0.72Ohm | 500 mJ | N-Channel | 3900pF @ 25V | 720m Ω @ 500mA, 10V | 5.5V @ 4mA | 14A Tc | 61nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFT50N60P3-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 600V | 1.04kW Tc | N-Channel | 6300pF @ 25V | 145m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV60N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 60A | 300V | N-Channel | 60A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP16N60P3 | IXYS | $5.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfa16n60p3-datasheets-3792.pdf | TO-220-3 | 3 | 26 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 347W Tc | TO-220AB | 40A | 0.44Ohm | 800 mJ | N-Channel | 1830pF @ 25V | 470m Ω @ 500mA, 10V | 5V @ 1.5mA | 16A Tc | 36nC @ 10V | 10V | ±30V |
